ATE517960T1 - Ceroxidschleifmittel und diese enthaltende aufschlämmung - Google Patents
Ceroxidschleifmittel und diese enthaltende aufschlämmungInfo
- Publication number
- ATE517960T1 ATE517960T1 AT06715744T AT06715744T ATE517960T1 AT E517960 T1 ATE517960 T1 AT E517960T1 AT 06715744 T AT06715744 T AT 06715744T AT 06715744 T AT06715744 T AT 06715744T AT E517960 T1 ATE517960 T1 AT E517960T1
- Authority
- AT
- Austria
- Prior art keywords
- sub
- polishing
- same
- slurry containing
- cerium oxide
- Prior art date
Links
- 239000002002 slurry Substances 0.000 title abstract 3
- 239000003082 abrasive agent Substances 0.000 title 1
- 238000005498 polishing Methods 0.000 abstract 4
- 229910000420 cerium oxide Inorganic materials 0.000 abstract 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 abstract 3
- 229910052684 Cerium Inorganic materials 0.000 abstract 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 abstract 1
- GHLITDDQOMIBFS-UHFFFAOYSA-H cerium(3+);tricarbonate Chemical compound [Ce+3].[Ce+3].[O-]C([O-])=O.[O-]C([O-])=O.[O-]C([O-])=O GHLITDDQOMIBFS-UHFFFAOYSA-H 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 239000002994 raw material Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F17/00—Compounds of rare earth metals
- C01F17/20—Compounds containing only rare earth metals as the metal element
- C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
- C01F17/224—Oxides or hydroxides of lanthanides
- C01F17/235—Cerium oxides or hydroxides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/12—Surface area
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Inorganic Chemistry (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20050007153 | 2005-01-26 | ||
| PCT/KR2006/000271 WO2006080796A1 (en) | 2005-01-26 | 2006-01-24 | Cerium oxide abrasive and slurry containing the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE517960T1 true ATE517960T1 (de) | 2011-08-15 |
Family
ID=36695187
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT06715744T ATE517960T1 (de) | 2005-01-26 | 2006-01-24 | Ceroxidschleifmittel und diese enthaltende aufschlämmung |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20060162260A1 (de) |
| EP (1) | EP1756244B1 (de) |
| JP (1) | JP4472747B2 (de) |
| KR (1) | KR100682231B1 (de) |
| CN (1) | CN100588698C (de) |
| AT (1) | ATE517960T1 (de) |
| TW (1) | TWI319761B (de) |
| WO (1) | WO2006080796A1 (de) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8388710B2 (en) * | 2005-01-26 | 2013-03-05 | Lg Chem, Ltd. | Cerium oxide powder, method for preparing the same, and CMP slurry comprising the same |
| KR20080011044A (ko) * | 2006-07-28 | 2008-01-31 | 주식회사 엘지화학 | 산화세륨 분말, 그 제조방법, 및 이를 포함하는cmp슬러리 |
| WO2008013407A1 (en) | 2006-07-28 | 2008-01-31 | Lg Chem, Ltd. | Cerium oxide powder, method for preparing the same, and cmp slurry comprising the same |
| DE102005017372A1 (de) | 2005-04-14 | 2006-10-19 | Degussa Ag | Wässrige Ceroxiddispersion |
| WO2007035034A1 (en) * | 2005-09-20 | 2007-03-29 | Lg Chem, Ltd. | Cerium carbonate powder, method for preparing the same, cerium oxide powder made therefrom, method for preparing the same, and cmp slurry comprising the same |
| US8361419B2 (en) | 2005-09-20 | 2013-01-29 | Lg Chem, Ltd. | Cerium carbonate powder, method for preparing the same, cerium oxide powder made therefrom, method for preparing the same, and CMP slurry comprising the same |
| US7776228B2 (en) * | 2006-04-11 | 2010-08-17 | Ebara Corporation | Catalyst-aided chemical processing method |
| KR100988658B1 (ko) * | 2006-12-13 | 2010-10-18 | 주식회사 엘지화학 | 탄산세륨과 산화세륨의 신규한 제조방법 |
| WO2008114972A1 (en) * | 2007-03-16 | 2008-09-25 | Lg Chem, Ltd. | Method for preparing cerium carbonate powder |
| US8303918B2 (en) * | 2007-03-16 | 2012-11-06 | Lg Chem, Ltd. | Method for preparing cerium carbonate powder using urea |
| WO2008136593A1 (en) | 2007-05-03 | 2008-11-13 | Lg Chem, Ltd. | Cerium oxide powder for abrasive and cmp slurry comprising the same |
| US8252087B2 (en) | 2007-10-31 | 2012-08-28 | Molycorp Minerals, Llc | Process and apparatus for treating a gas containing a contaminant |
| WO2009116806A1 (en) * | 2008-03-20 | 2009-09-24 | Lg Chem, Ltd. | Method for preparing cerium carbonate |
| KR101184732B1 (ko) * | 2008-03-20 | 2012-09-20 | 주식회사 엘지화학 | 탄산세륨 제조 방법 |
| KR101101833B1 (ko) * | 2009-09-25 | 2012-01-02 | 솔브레인 주식회사 | 침상형 탄산세륨으로부터 100 nm 급 크기의 산화세륨 제조방법 |
| TWI431080B (zh) * | 2009-10-13 | 2014-03-21 | Lg化學公司 | 化學機械拋光之漿料組成物及拋光方法 |
| KR101238786B1 (ko) | 2010-02-05 | 2013-02-28 | 주식회사 엘지화학 | 탄산세륨의 제조 방법 및 산화세륨의 제조 방법 |
| CN101891233A (zh) * | 2010-07-12 | 2010-11-24 | 南昌大学 | 一种超细氧化铈的制备方法 |
| EP2858096B1 (de) * | 2012-05-25 | 2017-01-11 | Nissan Chemical Industries, Ltd. | Polierlösungszusammensetzung für wafer |
| US9157010B2 (en) * | 2012-07-18 | 2015-10-13 | Cabot Microelectronics Corporation | Magnetorheological fluid for ultrasmooth polishing |
| US10071459B2 (en) * | 2013-09-25 | 2018-09-11 | 3M Innovative Properties Company | Multi-layered polishing pads |
| KR102758095B1 (ko) * | 2016-12-14 | 2025-01-22 | 솔브레인 주식회사 | 화학적 기계적 연마 슬러리 조성물 및 반도체 소자의 제조방법 |
| KR102679084B1 (ko) | 2021-08-30 | 2024-06-27 | 주식회사 케이씨텍 | 산화세륨 연마입자 및 연마 슬러리 조성물 |
| KR20260054817A (ko) * | 2024-10-16 | 2026-04-23 | 한남대학교 산학협력단 | 고상법을 이용한 반도체 cmp 공정용 세리아 나노입자의 제조방법 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2980504B2 (ja) * | 1993-12-21 | 1999-11-22 | 信越化学工業株式会社 | 新規な形態を有する炭酸セリウムおよび炭酸セリウム並びに酸化セリウムの製造方法 |
| WO1997029510A1 (fr) * | 1996-02-07 | 1997-08-14 | Hitachi Chemical Company, Ltd. | Abrasif d'oxyde de cerium, microplaquette semi-conductrice, dispositif semi-conducteur, procede pour les produire et procede pour polir les substrats |
| KR19980019046A (ko) * | 1996-08-29 | 1998-06-05 | 고사이 아키오 | 연마용 조성물 및 이의 용도(Abrasive composition and use of the same) |
| JPH10106989A (ja) * | 1996-09-30 | 1998-04-24 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の研磨法 |
| JPH10106991A (ja) * | 1996-09-30 | 1998-04-24 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の研磨法 |
| JPH10106992A (ja) * | 1996-09-30 | 1998-04-24 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の研磨法 |
| EP2164095A1 (de) * | 1996-09-30 | 2010-03-17 | Hitachi Chemical Co., Ltd. | Schleifmittel auf Basis von Ceroxid und Verfahren zum Polieren von Oberflächen |
| JPH10106990A (ja) * | 1996-09-30 | 1998-04-24 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の研磨法 |
| JPH11181404A (ja) * | 1997-12-18 | 1999-07-06 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤および基板の研磨法 |
| JPH11181403A (ja) * | 1997-12-18 | 1999-07-06 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の研磨法 |
| KR100754103B1 (ko) * | 1998-12-25 | 2007-08-31 | 히다치 가세고교 가부시끼가이샤 | Cmp 연마제, cmp 연마제용 첨가액 및 기판의 연마방법 |
| TWI272249B (en) * | 2001-02-27 | 2007-02-01 | Nissan Chemical Ind Ltd | Crystalline ceric oxide sol and process for producing the same |
| WO2004037722A1 (ja) * | 2002-10-28 | 2004-05-06 | Nissan Chemical Industries, Ltd. | 酸化セリウム粒子及びその製造方法 |
| JP4273920B2 (ja) * | 2002-10-28 | 2009-06-03 | 日産化学工業株式会社 | 酸化セリウム粒子及び多段階焼成による製造方法 |
-
2006
- 2006-01-24 JP JP2007502741A patent/JP4472747B2/ja not_active Expired - Fee Related
- 2006-01-24 CN CN200680000046A patent/CN100588698C/zh not_active Expired - Fee Related
- 2006-01-24 AT AT06715744T patent/ATE517960T1/de not_active IP Right Cessation
- 2006-01-24 EP EP06715744A patent/EP1756244B1/de not_active Expired - Lifetime
- 2006-01-24 WO PCT/KR2006/000271 patent/WO2006080796A1/en not_active Ceased
- 2006-01-25 TW TW095102930A patent/TWI319761B/zh not_active IP Right Cessation
- 2006-01-26 US US11/339,841 patent/US20060162260A1/en not_active Abandoned
- 2006-01-26 KR KR1020060008487A patent/KR100682231B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR100682231B1 (ko) | 2007-02-12 |
| WO2006080796A1 (en) | 2006-08-03 |
| CN101006153A (zh) | 2007-07-25 |
| TWI319761B (en) | 2010-01-21 |
| JP2007527945A (ja) | 2007-10-04 |
| EP1756244A1 (de) | 2007-02-28 |
| EP1756244A4 (de) | 2008-03-26 |
| TW200628406A (en) | 2006-08-16 |
| CN100588698C (zh) | 2010-02-10 |
| WO2006080796A8 (en) | 2006-12-14 |
| JP4472747B2 (ja) | 2010-06-02 |
| KR20060086327A (ko) | 2006-07-31 |
| EP1756244B1 (de) | 2011-07-27 |
| US20060162260A1 (en) | 2006-07-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI319761B (en) | Cerium oxide abrasive and slurry containing the same | |
| JP2000336344A (ja) | 研磨剤 | |
| CN102105266B (zh) | 氧化铝颗粒以及包含该氧化铝颗粒的抛光组合物 | |
| TWI605112B (zh) | 研磨用組成物 | |
| DE60030444D1 (de) | Cmp-zusammensetzung enthaltend silanmodifizierte-schleifteilchen | |
| KR100695858B1 (ko) | 연마제 | |
| ATE550144T1 (de) | Synthetischer schleifstein | |
| JP2010503232A5 (de) | ||
| TW201143919A (en) | Polishing composition and polishing method using the same | |
| RU2006104117A (ru) | Абразивные частицы для механической полировки | |
| SG148912A1 (en) | Chemical mechanical polishing slurry composition for polishing phase- change memory device and method for polishing phase-change memory device using the same | |
| TW200738856A (en) | Polishing composition and polishing method | |
| TW200512822A (en) | Polishing agent for planarizing semiconductors | |
| TW201213522A (en) | Polishing agent and polishing method | |
| WO2010140671A1 (ja) | シリコンウェーハの研磨方法及びシリコンウェーハ | |
| JP2007027663A (ja) | 研磨用組成物 | |
| WO2007041199A3 (en) | Polishing slurries and methods for utilizing same | |
| TW200717635A (en) | Polishing method for semiconductor wafer | |
| TW200609336A (en) | Polishing composition and substrate polishing method | |
| TWI727165B (zh) | 矽晶圓的研磨方法 | |
| JP4752072B2 (ja) | 研磨方法及び研磨装置 | |
| JP2000188270A (ja) | 酸化セリウム研磨剤及び基板の研磨法 | |
| JP2000053946A5 (de) | ||
| JP5726612B2 (ja) | 研磨材料、研磨用組成物及び研磨方法 | |
| Chen et al. | Study on ultra-precision polishing of silicon wafer by nanosized abrasives. |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |