ATE518250T1 - Metallbasis-nanodraht-transistor - Google Patents

Metallbasis-nanodraht-transistor

Info

Publication number
ATE518250T1
ATE518250T1 AT06821239T AT06821239T ATE518250T1 AT E518250 T1 ATE518250 T1 AT E518250T1 AT 06821239 T AT06821239 T AT 06821239T AT 06821239 T AT06821239 T AT 06821239T AT E518250 T1 ATE518250 T1 AT E518250T1
Authority
AT
Austria
Prior art keywords
electrode
metal base
nanowire transistor
base
transistor
Prior art date
Application number
AT06821239T
Other languages
English (en)
Inventor
Prabhat Agarwal
Godefridus Hurkx
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE518250T1 publication Critical patent/ATE518250T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H10D48/362—Unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunnelling transistors [RTT], bulk barrier transistors [BBT], planar doped barrier transistors [PDBT] or charge injection transistors [CHINT]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
AT06821239T 2005-11-18 2006-10-29 Metallbasis-nanodraht-transistor ATE518250T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP05110934 2005-11-18
PCT/IB2006/053995 WO2007057802A1 (en) 2005-11-18 2006-10-29 Metal-base nanowire transistor

Publications (1)

Publication Number Publication Date
ATE518250T1 true ATE518250T1 (de) 2011-08-15

Family

ID=37763841

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06821239T ATE518250T1 (de) 2005-11-18 2006-10-29 Metallbasis-nanodraht-transistor

Country Status (8)

Country Link
US (1) US7709923B2 (de)
EP (1) EP1952444B1 (de)
JP (1) JP5049978B2 (de)
KR (1) KR101106913B1 (de)
CN (1) CN101310389B (de)
AT (1) ATE518250T1 (de)
TW (1) TW200727477A (de)
WO (1) WO2007057802A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009046110A1 (en) * 2007-10-01 2009-04-09 University Of Southern California Detection of mthylated dna and dna mutations
US20100204062A1 (en) * 2008-11-07 2010-08-12 University Of Southern California Calibration methods for multiplexed sensor arrays
WO2010115143A1 (en) * 2009-04-03 2010-10-07 University Of Southern California Surface modification of nanosensor platforms to increase sensitivity and reproducibility
US9048301B2 (en) 2013-10-16 2015-06-02 Taiwan Semiconductor Manufacturing Company Limited Nanowire MOSFET with support structures for source and drain
US11133384B1 (en) * 2020-04-19 2021-09-28 Koucheng Wu Quantum wire resonant tunneling transistor

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01232763A (ja) * 1988-03-14 1989-09-18 Nec Corp メタルベーストランジスタ
JP2535738B2 (ja) * 1988-12-09 1996-09-18 工業技術院長 半導体装置
JPH0595121A (ja) * 1991-10-01 1993-04-16 Nippon Telegr & Teleph Corp <Ntt> 量子細線構造およびその作製方法
US7030408B1 (en) * 1999-03-29 2006-04-18 Hewlett-Packard Development Company, L.P. Molecular wire transistor (MWT)
CA2442985C (en) * 2001-03-30 2016-05-31 The Regents Of The University Of California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
WO2004088755A1 (en) * 2003-04-04 2004-10-14 Startskottet 22286 Ab Nanowhiskers with pn junctions and methods of fabricating thereof
WO2005064687A1 (en) * 2003-12-23 2005-07-14 Koninklijke Philips Electronics N.V. Semiconductor device comprising a pn-heterojunction
TWI248681B (en) * 2004-03-29 2006-02-01 Imec Inter Uni Micro Electr Method for fabricating self-aligned source and drain contacts in a double gate FET with controlled manufacturing of a thin Si or non-Si channel
US7170120B2 (en) * 2005-03-31 2007-01-30 Intel Corporation Carbon nanotube energy well (CNEW) field effect transistor

Also Published As

Publication number Publication date
US7709923B2 (en) 2010-05-04
CN101310389A (zh) 2008-11-19
KR101106913B1 (ko) 2012-01-25
JP2009516385A (ja) 2009-04-16
KR20080074988A (ko) 2008-08-13
EP1952444B1 (de) 2011-07-27
EP1952444A1 (de) 2008-08-06
WO2007057802A1 (en) 2007-05-24
TW200727477A (en) 2007-07-16
JP5049978B2 (ja) 2012-10-17
US20080237574A1 (en) 2008-10-02
CN101310389B (zh) 2010-06-23

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Legal Events

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