ATE519224T1 - Speicherzelle mit einem seitlich von einem transistor angeordneten kondensator - Google Patents

Speicherzelle mit einem seitlich von einem transistor angeordneten kondensator

Info

Publication number
ATE519224T1
ATE519224T1 AT08869018T AT08869018T ATE519224T1 AT E519224 T1 ATE519224 T1 AT E519224T1 AT 08869018 T AT08869018 T AT 08869018T AT 08869018 T AT08869018 T AT 08869018T AT E519224 T1 ATE519224 T1 AT E519224T1
Authority
AT
Austria
Prior art keywords
memory cell
electrode
layer
capacitor
semiconductor region
Prior art date
Application number
AT08869018T
Other languages
English (en)
Inventor
Sophie Puget
Pascale Mazoyer
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE519224T1 publication Critical patent/ATE519224T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/33—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor extending under the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/714—Electrodes having non-planar surfaces, e.g. formed by texturisation having horizontal extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/813—Combinations of field-effect devices and capacitor only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
AT08869018T 2007-12-21 2008-12-18 Speicherzelle mit einem seitlich von einem transistor angeordneten kondensator ATE519224T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP07291585 2007-12-21
PCT/IB2008/055414 WO2009083882A2 (en) 2007-12-21 2008-12-18 Memory cell suitable for dram memory

Publications (1)

Publication Number Publication Date
ATE519224T1 true ATE519224T1 (de) 2011-08-15

Family

ID=40521603

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08869018T ATE519224T1 (de) 2007-12-21 2008-12-18 Speicherzelle mit einem seitlich von einem transistor angeordneten kondensator

Country Status (5)

Country Link
US (1) US20100308390A1 (de)
EP (1) EP2225773B1 (de)
CN (1) CN102124556A (de)
AT (1) ATE519224T1 (de)
WO (1) WO2009083882A2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017052645A1 (en) * 2015-09-25 2017-03-30 Intel Corporation Method, device and system to provide capacitance for a dynamic random access memory cell
US10535659B2 (en) 2017-09-29 2020-01-14 Samsung Electronics Co., Ltd. Semiconductor memory devices
KR102600110B1 (ko) * 2017-09-29 2023-11-10 삼성전자주식회사 반도체 메모리 소자
JP6488358B2 (ja) * 2017-10-26 2019-03-20 株式会社半導体エネルギー研究所 半導体装置
KR102524614B1 (ko) 2017-11-24 2023-04-24 삼성전자주식회사 반도체 메모리 소자
US11031404B2 (en) * 2018-11-26 2021-06-08 Etron Technology, Inc. Dynamic memory structure with a shared counter electrode
TWI713973B (zh) * 2019-01-15 2020-12-21 力晶積成電子製造股份有限公司 記憶體結構
KR102634622B1 (ko) 2019-02-28 2024-02-08 에스케이하이닉스 주식회사 수직형 메모리 장치
JP7421455B2 (ja) * 2020-09-18 2024-01-24 株式会社東芝 半導体装置
KR102914377B1 (ko) * 2021-08-12 2026-01-20 에스케이하이닉스 주식회사 반도체 장치 및 그 제조 방법
CN116234301B (zh) * 2022-05-17 2024-03-15 北京超弦存储器研究院 一种半导体器件结构及其制造方法、dram和电子设备

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4466177A (en) * 1983-06-30 1984-08-21 International Business Machines Corporation Storage capacitor optimization for one device FET dynamic RAM cell
JPH07161936A (ja) * 1993-12-07 1995-06-23 Toshiba Corp 半導体記憶装置とその製造方法
US5726485A (en) * 1996-03-13 1998-03-10 Micron Technology, Inc. Capacitor for a semiconductor device
CN1142587C (zh) * 1996-04-19 2004-03-17 松下电器产业株式会社 半导体器件
FR2849962B1 (fr) * 2003-01-13 2005-09-30 St Microelectronics Sa Condensateur enterre associe a une cellule sram
US6661043B1 (en) * 2003-03-27 2003-12-09 Taiwan Semiconductor Manufacturing Company One-transistor RAM approach for high density memory application
SG135079A1 (en) * 2006-03-02 2007-09-28 Sony Corp Memory device which comprises a multi-layer capacitor

Also Published As

Publication number Publication date
US20100308390A1 (en) 2010-12-09
EP2225773B1 (de) 2011-08-03
WO2009083882A3 (en) 2009-08-27
CN102124556A (zh) 2011-07-13
WO2009083882A2 (en) 2009-07-09
EP2225773A2 (de) 2010-09-08

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