ATE520186T1 - Strukturen zum schutz vor elektrostatischen entladungen für schnelle technologien mit gemischten und ultraniedrigen spannungsversorgungen - Google Patents

Strukturen zum schutz vor elektrostatischen entladungen für schnelle technologien mit gemischten und ultraniedrigen spannungsversorgungen

Info

Publication number
ATE520186T1
ATE520186T1 AT02725177T AT02725177T ATE520186T1 AT E520186 T1 ATE520186 T1 AT E520186T1 AT 02725177 T AT02725177 T AT 02725177T AT 02725177 T AT02725177 T AT 02725177T AT E520186 T1 ATE520186 T1 AT E520186T1
Authority
AT
Austria
Prior art keywords
coupled
electrostatic discharge
ultra
low voltage
discharge protection
Prior art date
Application number
AT02725177T
Other languages
English (en)
Inventor
Marcus Mergens
Koen Verhaege
John Armer
Christian Russ
Original Assignee
Sofics Bvba
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27501165&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE520186(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Sofics Bvba filed Critical Sofics Bvba
Application granted granted Critical
Publication of ATE520186T1 publication Critical patent/ATE520186T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements
    • H10D89/713—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base region coupled to the collector region of the other transistor, e.g. silicon controlled rectifier [SCR] devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/30—Modifications for providing a predetermined threshold before switching
    • H03K17/305—Modifications for providing a predetermined threshold before switching in thyristor switches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/20—Breakdown diodes, e.g. avalanche diodes
    • H10D8/25—Zener diodes 

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
AT02725177T 2001-03-16 2002-03-15 Strukturen zum schutz vor elektrostatischen entladungen für schnelle technologien mit gemischten und ultraniedrigen spannungsversorgungen ATE520186T1 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US27641501P 2001-03-16 2001-03-16
US27642401P 2001-03-16 2001-03-16
US27641601P 2001-03-16 2001-03-16
US31854801P 2001-09-11 2001-09-11
PCT/US2002/007895 WO2002075891A1 (en) 2001-03-16 2002-03-15 Electrostatic discharge protection structures for high speed technologies with mixed and ultra-low voltage supplies

Publications (1)

Publication Number Publication Date
ATE520186T1 true ATE520186T1 (de) 2011-08-15

Family

ID=27501165

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02725177T ATE520186T1 (de) 2001-03-16 2002-03-15 Strukturen zum schutz vor elektrostatischen entladungen für schnelle technologien mit gemischten und ultraniedrigen spannungsversorgungen

Country Status (6)

Country Link
US (1) US6768616B2 (de)
EP (3) EP1368874B2 (de)
JP (1) JP4176481B2 (de)
AT (1) ATE520186T1 (de)
TW (1) TW543179B (de)
WO (1) WO2002075891A1 (de)

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* Cited by examiner, † Cited by third party
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EP1368874B2 (de) 2015-02-18
EP2393177A1 (de) 2011-12-07
JP2004533713A (ja) 2004-11-04
EP2395620A1 (de) 2011-12-14
EP2395620B1 (de) 2015-06-17
EP1368874A1 (de) 2003-12-10
US20020154463A1 (en) 2002-10-24
WO2002075891A1 (en) 2002-09-26
EP1368874A4 (de) 2007-02-28
JP4176481B2 (ja) 2008-11-05
TW543179B (en) 2003-07-21
EP1368874B8 (de) 2011-10-05
US6768616B2 (en) 2004-07-27
EP2393177B1 (de) 2015-12-30
EP1368874B1 (de) 2011-08-10

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