ATE521015T1 - Triangulieren von design-daten und codierung von design-absicht für mikrolithografisches drucken - Google Patents

Triangulieren von design-daten und codierung von design-absicht für mikrolithografisches drucken

Info

Publication number
ATE521015T1
ATE521015T1 AT08736317T AT08736317T ATE521015T1 AT E521015 T1 ATE521015 T1 AT E521015T1 AT 08736317 T AT08736317 T AT 08736317T AT 08736317 T AT08736317 T AT 08736317T AT E521015 T1 ATE521015 T1 AT E521015T1
Authority
AT
Austria
Prior art keywords
design
microlithocraphic
triangulating
printing
coding
Prior art date
Application number
AT08736317T
Other languages
English (en)
Inventor
Lars Ivansen
Anders Oesterberg
Original Assignee
Micronic Mydata AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micronic Mydata AB filed Critical Micronic Mydata AB
Application granted granted Critical
Publication of ATE521015T1 publication Critical patent/ATE521015T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T3/00—Geometric image transformations in the plane of the image
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Analytical Chemistry (AREA)
  • Image Generation (AREA)
  • Prostheses (AREA)
  • Pens And Brushes (AREA)
AT08736317T 2007-04-17 2008-04-17 Triangulieren von design-daten und codierung von design-absicht für mikrolithografisches drucken ATE521015T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/736,490 US7930653B2 (en) 2007-04-17 2007-04-17 Triangulating design data and encoding design intent for microlithographic printing
PCT/EP2008/054649 WO2008125692A1 (en) 2007-04-17 2008-04-17 Triangulating design data and encoding design intent for microlithographic printing

Publications (1)

Publication Number Publication Date
ATE521015T1 true ATE521015T1 (de) 2011-09-15

Family

ID=39710985

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08736317T ATE521015T1 (de) 2007-04-17 2008-04-17 Triangulieren von design-daten und codierung von design-absicht für mikrolithografisches drucken

Country Status (5)

Country Link
US (1) US7930653B2 (de)
EP (1) EP2142959B1 (de)
KR (1) KR101455052B1 (de)
AT (1) ATE521015T1 (de)
WO (1) WO2008125692A1 (de)

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WO2007035166A2 (en) * 2005-09-26 2007-03-29 Micronic Laser Systems Ab Methods and systems for pattern generation based on multiple forms of design data
US9552670B1 (en) * 2007-02-28 2017-01-24 Autodesk, Inc. System and method for triangulation of non-simple, multiply-connected, multi-styled shapes
US8773432B2 (en) * 2008-04-18 2014-07-08 Adobe Systems Incorporated Triangulation for accelerated multi-resolution rendering of stroked paths
US20100013854A1 (en) * 2008-07-18 2010-01-21 Microsoft Corporation Gpu bezier path rasterization
US8069423B2 (en) * 2008-08-11 2011-11-29 Cadence Design Systems, Inc. System and method for model based multi-patterning optimization
WO2010063827A1 (en) * 2008-12-05 2010-06-10 Micronic Laser Systems Ab Gradient assisted image resampling in micro-lithographic printing
US8539395B2 (en) 2010-03-05 2013-09-17 Micronic Laser Systems Ab Method and apparatus for merging multiple geometrical pixel images and generating a single modulator pixel image
US8669989B2 (en) * 2010-05-19 2014-03-11 Pinebrook Imaging, Inc. Parallel image processing system
US8692825B2 (en) * 2010-06-24 2014-04-08 International Business Machines Corporation Parallelized streaming accelerated data structure generation
US8225247B2 (en) * 2010-07-13 2012-07-17 Satish Padmanabhan Automatic optimal integrated circuit generator from algorithms and specification
US8516402B1 (en) 2011-08-22 2013-08-20 Cadence Design Systems, Inc. Method and apparatus for automatically fixing double patterning loop violations
US8473874B1 (en) 2011-08-22 2013-06-25 Cadence Design Systems, Inc. Method and apparatus for automatically fixing double patterning loop violations
NL2009797A (en) * 2011-11-29 2013-05-30 Asml Netherlands Bv Apparatus and method for converting a vector-based representation of a desired device pattern for a lithography apparatus, apparatus and method for providing data to a programmable patterning device, a lithography apparatus and a device manufacturing method.
EP2950325B1 (de) 2014-05-30 2018-11-28 IMS Nanofabrication GmbH Kompensation von dosisinhomogenität mittels überlappender belichtungsorte
JP6892214B2 (ja) 2014-07-10 2021-06-23 アイエムエス ナノファブリケーション ゲーエムベーハー 畳み込みカーネルを使用する粒子ビーム描画機のカスタマイズ化
US9568907B2 (en) * 2014-09-05 2017-02-14 Ims Nanofabrication Ag Correction of short-range dislocations in a multi-beam writer
US9653263B2 (en) 2015-03-17 2017-05-16 Ims Nanofabrication Ag Multi-beam writing of pattern areas of relaxed critical dimension
EP3096342B1 (de) 2015-03-18 2017-09-20 IMS Nanofabrication AG Bidirektionales mehrstrahliges schreiben mit doppeldurchgang
US10410831B2 (en) 2015-05-12 2019-09-10 Ims Nanofabrication Gmbh Multi-beam writing using inclined exposure stripes
JP6910130B2 (ja) 2015-11-06 2021-07-28 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． ３ｄレンダリング方法及び３ｄレンダリング装置
US10325756B2 (en) 2016-06-13 2019-06-18 Ims Nanofabrication Gmbh Method for compensating pattern placement errors caused by variation of pattern exposure density in a multi-beam writer
US10325757B2 (en) 2017-01-27 2019-06-18 Ims Nanofabrication Gmbh Advanced dose-level quantization of multibeam-writers
US10522329B2 (en) 2017-08-25 2019-12-31 Ims Nanofabrication Gmbh Dose-related feature reshaping in an exposure pattern to be exposed in a multi beam writing apparatus
US11569064B2 (en) 2017-09-18 2023-01-31 Ims Nanofabrication Gmbh Method for irradiating a target using restricted placement grids
TWI648604B (zh) * 2017-12-27 2019-01-21 財團法人工業技術研究院 數位直接成像方法與系統、影像產生方法與電子裝置
US10651010B2 (en) 2018-01-09 2020-05-12 Ims Nanofabrication Gmbh Non-linear dose- and blur-dependent edge placement correction
US10840054B2 (en) 2018-01-30 2020-11-17 Ims Nanofabrication Gmbh Charged-particle source and method for cleaning a charged-particle source using back-sputtering
US11099482B2 (en) 2019-05-03 2021-08-24 Ims Nanofabrication Gmbh Adapting the duration of exposure slots in multi-beam writers
US11865773B2 (en) 2019-11-11 2024-01-09 Texas Instruments Incorporated Additive process for circular printing of electronic devices
KR102919104B1 (ko) 2020-02-03 2026-01-29 아이엠에스 나노패브릭케이션 게엠베하 멀티―빔 라이터의 블러 변화 보정
KR102922552B1 (ko) 2020-04-24 2026-02-04 아이엠에스 나노패브릭케이션 게엠베하 대전 입자 소스
EP4095882A1 (de) 2021-05-25 2022-11-30 IMS Nanofabrication GmbH Musterdatenverarbeitung für programmierbare direktschreibgeräte
US12154756B2 (en) 2021-08-12 2024-11-26 Ims Nanofabrication Gmbh Beam pattern device having beam absorber structure
FR3129030B1 (fr) * 2021-11-10 2024-03-01 St Microelectronics Sa Dispositif et procédé de génération de masques photolithographiques

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US7022439B2 (en) 2003-04-10 2006-04-04 Synopsys, Inc. Fracturing polygons used in a lithography process for fabricating an integrated circuit
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US7010776B2 (en) * 2003-10-27 2006-03-07 International Business Machines Corporation Extending the range of lithographic simulation integrals

Also Published As

Publication number Publication date
KR20100031664A (ko) 2010-03-24
EP2142959A1 (de) 2010-01-13
KR101455052B1 (ko) 2014-10-27
WO2008125692A1 (en) 2008-10-23
EP2142959B1 (de) 2011-08-17
US7930653B2 (en) 2011-04-19
US20080260283A1 (en) 2008-10-23

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