ATE521736T1 - Verfahren zur herstellung einer mehrschaligen nanokristallinen struktur, mehrschalige nanokristalline strukturen und eine damit hergestellte anordnung - Google Patents

Verfahren zur herstellung einer mehrschaligen nanokristallinen struktur, mehrschalige nanokristalline strukturen und eine damit hergestellte anordnung

Info

Publication number
ATE521736T1
ATE521736T1 AT06254428T AT06254428T ATE521736T1 AT E521736 T1 ATE521736 T1 AT E521736T1 AT 06254428 T AT06254428 T AT 06254428T AT 06254428 T AT06254428 T AT 06254428T AT E521736 T1 ATE521736 T1 AT E521736T1
Authority
AT
Austria
Prior art keywords
shell
shell nanocrystalline
producing
produced therefrom
structures
Prior art date
Application number
AT06254428T
Other languages
English (en)
Inventor
Shin Ae Jun
Eun Joo Jang
Original Assignee
Samsung Electro Mech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electro Mech filed Critical Samsung Electro Mech
Application granted granted Critical
Publication of ATE521736T1 publication Critical patent/ATE521736T1/de

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/005—Epitaxial layer growth
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/701—Integrated with dissimilar structures on a common substrate
    • Y10S977/712—Integrated with dissimilar structures on a common substrate formed from plural layers of nanosized material, e.g. stacked structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/701—Integrated with dissimilar structures on a common substrate
    • Y10S977/712—Integrated with dissimilar structures on a common substrate formed from plural layers of nanosized material, e.g. stacked structures
    • Y10S977/714—Containing protein
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
    • Y10T428/2984—Microcapsule with fluid core [includes liposome]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Composite Materials (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Luminescent Compositions (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT06254428T 2005-09-12 2006-08-24 Verfahren zur herstellung einer mehrschaligen nanokristallinen struktur, mehrschalige nanokristalline strukturen und eine damit hergestellte anordnung ATE521736T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050084554A KR101159853B1 (ko) 2005-09-12 2005-09-12 다층구조 나노결정의 제조방법 및 그에 의해 수득된 나노결정

Publications (1)

Publication Number Publication Date
ATE521736T1 true ATE521736T1 (de) 2011-09-15

Family

ID=37622093

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06254428T ATE521736T1 (de) 2005-09-12 2006-08-24 Verfahren zur herstellung einer mehrschaligen nanokristallinen struktur, mehrschalige nanokristalline strukturen und eine damit hergestellte anordnung

Country Status (5)

Country Link
US (1) US7621997B2 (de)
EP (1) EP1762642B1 (de)
JP (1) JP5536972B2 (de)
KR (1) KR101159853B1 (de)
AT (1) ATE521736T1 (de)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2007145089A1 (ja) * 2006-06-14 2009-10-29 コニカミノルタエムジー株式会社 ３層型半導体粒子
US9406759B2 (en) * 2006-08-30 2016-08-02 University Of Florida Research Foundation, Inc. Methods for forming nanocrystals with position-controlled dopants
WO2008133660A2 (en) 2006-11-21 2008-11-06 Qd Vision, Inc. Nanocrystals including a group iiia element and a group va element, method, composition, device and other prodcucts
US8197720B2 (en) 2007-01-22 2012-06-12 Konica Minolta Medical & Graphic, Inc. Core/shell type semiconductor nanoparticle and method for production thereof
KR100841186B1 (ko) * 2007-03-26 2008-06-24 삼성전자주식회사 다층 쉘 구조의 나노결정 및 그의 제조방법
KR100900866B1 (ko) 2007-05-09 2009-06-04 삼성전자주식회사 나노결정-금속산화물 복합체를 이용하는 발광 다이오드소자 및 그의 제조방법
CN101070474B (zh) * 2007-06-14 2011-01-19 中南大学 灯用壳层梯度绿色发光材料及其制备方法
EP2178790A4 (de) * 2007-08-06 2010-10-13 Agency Science Tech & Res Verfahren zur herstellung eines kadmium- und selenhaltigen nanokristallinen verbundstoffs und daraus hergestellter nanokristalliner verbundstoff
GB0724298D0 (en) * 2007-12-12 2008-01-23 Smartwater Ltd A method for improving the long term stability of nano-crystalline semiconductors in an exterior enviroment
EP2337763A4 (de) * 2008-10-03 2013-09-04 Life Technologies Corp Verfahren zur herstellung von nanokristallen mithilfe eines schwachen elektronenübertragungswirkstoffs und fehlerhaften hüllenvorläufern
EP2349918B1 (de) * 2008-10-24 2018-03-21 Life Technologies Corporation Stabile nanopartikel und verfahren zu ihrer herstellung
JP5007293B2 (ja) * 2008-10-31 2012-08-22 Ｄｏｗａホールディングス株式会社 カルコゲン化合物粉の製造方法
KR101480511B1 (ko) * 2008-12-19 2015-01-08 삼성전자 주식회사 금속-계면활성제층으로 코팅된 나노 결정의 제조 방법
US8455904B2 (en) 2009-04-20 2013-06-04 3M Innovative Properties Company Non-radiatively pumped wavelength converter
EP2433314A1 (de) * 2009-04-20 2012-03-28 3M Innovative Properties Company Nicht mit strahlung gepumpter wellenlängenumsetzer
KR101250859B1 (ko) * 2009-05-04 2013-04-04 최경재 다층 양자점 및 그 다층 양자점을 적용한 발광소자
WO2011100023A1 (en) 2010-02-10 2011-08-18 Qd Vision, Inc. Semiconductor nanocrystals and methods of preparation
KR101664180B1 (ko) * 2010-03-22 2016-10-12 삼성디스플레이 주식회사 양자점 제조 방법
WO2012099653A2 (en) 2010-12-08 2012-07-26 Qd Vision, Inc. Semiconductor nanocrystals and methods of preparation
WO2012158832A2 (en) 2011-05-16 2012-11-22 Qd Vision, Inc. Method for preparing semiconductor nanocrystals
KR101320549B1 (ko) * 2011-06-14 2013-10-28 주식회사 큐디솔루션 코어-다중쉘 구조의 양자점 및 이의 제조방법
KR101278257B1 (ko) * 2011-08-25 2013-06-24 한국기계연구원 양자점 및 그 제조 방법
US9159872B2 (en) 2011-11-09 2015-10-13 Pacific Light Technologies Corp. Semiconductor structure having nanocrystalline core and nanocrystalline shell
KR101353350B1 (ko) * 2011-11-09 2014-01-21 한국표준과학연구원 광대역 파장 흡수 및 에너지변환을 이용한 고효율 태양전지
US20130112942A1 (en) 2011-11-09 2013-05-09 Juanita Kurtin Composite having semiconductor structures embedded in a matrix
WO2013078247A1 (en) 2011-11-22 2013-05-30 Qd Vision, Inc. Methods of coating semiconductor nanocrystals, semiconductor nanocrystals, and products including same
WO2013078249A1 (en) 2011-11-22 2013-05-30 Qd Vision Inc. Method of making quantum dots
US10008631B2 (en) 2011-11-22 2018-06-26 Samsung Electronics Co., Ltd. Coated semiconductor nanocrystals and products including same
CN104205368B (zh) 2012-02-05 2018-08-07 三星电子株式会社 半导体纳米晶体、其制备方法、组合物、以及产品
US10807865B2 (en) 2012-03-15 2020-10-20 Massachusetts Institute Of Technology Semiconductor nanocrystals
US20140117311A1 (en) 2012-10-29 2014-05-01 Juanita N. Kurtin Semiconductor structure having nanocrystalline core and nanocrystalline shell pairing with compositional transition layer
KR101426448B1 (ko) * 2012-11-09 2014-08-05 주식회사 엘엠에스 나노 복합체, 이를 포함하는 광학 부재 및 백라이트 유닛
CN105940082B (zh) * 2014-02-04 2019-07-05 亮锐控股有限公司 在无机基质中具有无机配体的量子点
JP6697272B2 (ja) * 2015-01-19 2020-05-20 スタンレー電気株式会社 コアシェル構造を有する量子ドットとその製造方法
US9515194B2 (en) 2015-03-27 2016-12-06 International Business Machines Corporation Nano-ribbon channel transistor with back-bias control
KR102640897B1 (ko) * 2016-09-13 2024-02-26 엘지디스플레이 주식회사 양자막대, 그 합성 방법 및 양자막대 표시장치
KR102399447B1 (ko) * 2017-10-16 2022-05-17 엘지디스플레이 주식회사 양자점과 이를 포함하는 양자점 발광다이오드 및 양자점 발광 표시장치
US11365348B2 (en) 2018-01-11 2022-06-21 Samsung Electronics Co., Ltd. Quantum dot, production method thereof, and electronic device including the same
KR102200585B1 (ko) 2019-03-22 2021-01-11 재단법인대구경북과학기술원 고발광성 단파 적외선 나노입자 및 이의 제조방법
KR102746318B1 (ko) 2019-10-01 2024-12-24 삼성디스플레이 주식회사 양자점, 이를 포함하는 조성물과 복합체, 및 이를 포함하는 전자 소자
KR102696701B1 (ko) 2020-02-13 2024-08-22 삼성디스플레이 주식회사 양자점 및 이를 포함하는 발광 소자
US11702593B2 (en) 2020-02-28 2023-07-18 Samsung Electronics Co., Ltd. Quantum dots, and electronic devices and electronic equipments including same
KR20220012827A (ko) 2020-07-23 2022-02-04 삼성전자주식회사 양자점 및 이를 포함하는 양자점-폴리머 복합체 및 전자 소자
KR102875120B1 (ko) 2021-05-11 2025-10-22 삼성디스플레이 주식회사 양자점 제조방법, 상기 제조방법으로 제조된 양자점, 상기 양자점을 포함하는 광학 부재 및 상기 양자점을 포함하는 전자 장치
US12317575B2 (en) 2022-05-12 2025-05-27 University Of Delaware Super-semiconductors based on nanostructured arrays

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49109289A (de) * 1973-02-21 1974-10-17
AUPP004497A0 (en) * 1997-10-28 1997-11-20 University Of Melbourne, The Stabilized particles
US6322901B1 (en) 1997-11-13 2001-11-27 Massachusetts Institute Of Technology Highly luminescent color-selective nano-crystalline materials
US6306736B1 (en) 2000-02-04 2001-10-23 The Regents Of The University Of California Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process
US6225198B1 (en) 2000-02-04 2001-05-01 The Regents Of The University Of California Process for forming shaped group II-VI semiconductor nanocrystals, and product formed using process
CN1211252C (zh) 2000-09-27 2005-07-20 日本烟草产业株式会社 包装机的包装材料折入装置
JP4567436B2 (ja) 2001-07-20 2010-10-20 ライフ テクノロジーズ コーポレーション 発光ナノ粒子およびそれらの調製方法
WO2004053929A2 (en) 2002-08-13 2004-06-24 Massachusetts Institute Of Technology Semiconductor nanocrystal heterostructures
WO2004066361A2 (en) 2003-01-22 2004-08-05 The Board Of Trustees Of The University Of Arkansas Monodisperse core/shell and other complex structured nanocrystals and methods of preparing the same
WO2005002007A2 (en) * 2003-03-20 2005-01-06 The Research Foundation Of State University Of Newyork Process for producing semiconductor nanocrystal cores, core-shell, core-buffer-shell, and multiple layer systems in a non-coordinating solvent utilizing in situ surfactant generation
JP4269842B2 (ja) * 2003-08-08 2009-05-27 日油株式会社 半導体ナノ微結晶の製造方法
JP4528927B2 (ja) * 2003-09-04 2010-08-25 独立行政法人産業技術総合研究所 複合微粒子の製造方法および複合微粒子の製造装置、並びに複合微粒子
US20070116868A1 (en) * 2003-09-24 2007-05-24 The Regents Of The University Of California Hybrid synthesis of core/shell nanocrystals
KR100590784B1 (ko) * 2004-01-14 2006-06-15 학교법인 포항공과대학교 Ｉｉ-ｖｉ 반도체 화합물로 이루어진 고발광성 ｉ형 적층구조 코어/2중 쉘 양자점 및 이의 제조 방법
KR100722086B1 (ko) * 2004-11-11 2007-05-25 삼성전자주식회사 다층구조의 나노결정 및 그의 제조방법

Also Published As

Publication number Publication date
JP5536972B2 (ja) 2014-07-02
EP1762642A3 (de) 2009-07-08
KR101159853B1 (ko) 2012-06-25
KR20070029915A (ko) 2007-03-15
US7621997B2 (en) 2009-11-24
EP1762642A2 (de) 2007-03-14
EP1762642B1 (de) 2011-08-24
US20070059527A1 (en) 2007-03-15
JP2007077010A (ja) 2007-03-29

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