ATE525677T1 - Verfahren und vorrichtung zur bestimmung einer verbesserten konfiguration von hilfsstrukturen in einem maskenlayout - Google Patents

Verfahren und vorrichtung zur bestimmung einer verbesserten konfiguration von hilfsstrukturen in einem maskenlayout

Info

Publication number
ATE525677T1
ATE525677T1 AT06250316T AT06250316T ATE525677T1 AT E525677 T1 ATE525677 T1 AT E525677T1 AT 06250316 T AT06250316 T AT 06250316T AT 06250316 T AT06250316 T AT 06250316T AT E525677 T1 ATE525677 T1 AT E525677T1
Authority
AT
Austria
Prior art keywords
mask layout
assist feature
improved
assist
feature configuration
Prior art date
Application number
AT06250316T
Other languages
English (en)
Inventor
Lawrence S Melvin Iii
Benjamin D Painter
Original Assignee
Synopsys Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/065,409 external-priority patent/US7251807B2/en
Application filed by Synopsys Inc filed Critical Synopsys Inc
Application granted granted Critical
Publication of ATE525677T1 publication Critical patent/ATE525677T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
    • Y10T428/131—Glass, ceramic, or sintered, fused, fired, or calcined metal oxide or metal carbide containing [e.g., porcelain, brick, cement, etc.]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
AT06250316T 2005-02-24 2006-01-20 Verfahren und vorrichtung zur bestimmung einer verbesserten konfiguration von hilfsstrukturen in einem maskenlayout ATE525677T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/065,409 US7251807B2 (en) 2005-02-24 2005-02-24 Method and apparatus for identifying a manufacturing problem area in a layout using a process-sensitivity model
US11/109,534 US7475382B2 (en) 2005-02-24 2005-04-19 Method and apparatus for determining an improved assist feature configuration in a mask layout

Publications (1)

Publication Number Publication Date
ATE525677T1 true ATE525677T1 (de) 2011-10-15

Family

ID=35998967

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06250316T ATE525677T1 (de) 2005-02-24 2006-01-20 Verfahren und vorrichtung zur bestimmung einer verbesserten konfiguration von hilfsstrukturen in einem maskenlayout

Country Status (7)

Country Link
US (2) US7475382B2 (de)
EP (1) EP1696270B1 (de)
JP (1) JP4832088B2 (de)
KR (1) KR101187139B1 (de)
AT (1) ATE525677T1 (de)
SG (1) SG125170A1 (de)
TW (1) TWI388921B (de)

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US7475382B2 (en) * 2005-02-24 2009-01-06 Synopsys, Inc. Method and apparatus for determining an improved assist feature configuration in a mask layout
US7721246B2 (en) * 2005-02-24 2010-05-18 Synopsys, Inc. Method and apparatus for quickly determining the effect of placing an assist feature at a location in a layout
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US9311698B2 (en) 2013-01-09 2016-04-12 Kla-Tencor Corp. Detecting defects on a wafer using template image matching
US9092846B2 (en) 2013-02-01 2015-07-28 Kla-Tencor Corp. Detecting defects on a wafer using defect-specific and multi-channel information
US9865512B2 (en) 2013-04-08 2018-01-09 Kla-Tencor Corp. Dynamic design attributes for wafer inspection
US9310320B2 (en) 2013-04-15 2016-04-12 Kla-Tencor Corp. Based sampling and binning for yield critical defects
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Also Published As

Publication number Publication date
EP1696270B1 (de) 2011-09-21
US7475382B2 (en) 2009-01-06
SG125170A1 (en) 2006-09-29
TW200641520A (en) 2006-12-01
US7509624B2 (en) 2009-03-24
EP1696270A2 (de) 2006-08-30
KR20060094472A (ko) 2006-08-29
US20060188673A1 (en) 2006-08-24
US20060212839A1 (en) 2006-09-21
TWI388921B (zh) 2013-03-11
JP2006235607A (ja) 2006-09-07
JP4832088B2 (ja) 2011-12-07
KR101187139B1 (ko) 2012-10-05
EP1696270A3 (de) 2008-01-23

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