ATE526435T1 - Verfahren und vorrichtung zur abscheidung eines materials auf einem substrat - Google Patents
Verfahren und vorrichtung zur abscheidung eines materials auf einem substratInfo
- Publication number
- ATE526435T1 ATE526435T1 AT05777207T AT05777207T ATE526435T1 AT E526435 T1 ATE526435 T1 AT E526435T1 AT 05777207 T AT05777207 T AT 05777207T AT 05777207 T AT05777207 T AT 05777207T AT E526435 T1 ATE526435 T1 AT E526435T1
- Authority
- AT
- Austria
- Prior art keywords
- substrate
- deposing
- depositing
- vapor
- deposited
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/228—Gas flow assisted PVD deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/246—Replenishment of source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45568—Porous nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/915,695 US7780787B2 (en) | 2004-08-11 | 2004-08-11 | Apparatus and method for depositing a material on a substrate |
| PCT/US2005/026753 WO2006020409A2 (en) | 2004-08-11 | 2005-07-28 | Apparatus and method for depositing a material on a substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE526435T1 true ATE526435T1 (de) | 2011-10-15 |
Family
ID=35798794
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT05777207T ATE526435T1 (de) | 2004-08-11 | 2005-07-28 | Verfahren und vorrichtung zur abscheidung eines materials auf einem substrat |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US7780787B2 (de) |
| EP (1) | EP1794346B1 (de) |
| AT (1) | ATE526435T1 (de) |
| EA (1) | EA010965B1 (de) |
| WO (1) | WO2006020409A2 (de) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4180948B2 (ja) * | 2003-03-24 | 2008-11-12 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法、ガスノズル |
| FI119478B (fi) * | 2005-04-22 | 2008-11-28 | Beneq Oy | Reaktori |
| US9017480B2 (en) * | 2006-04-06 | 2015-04-28 | First Solar, Inc. | System and method for transport |
| NZ579354A (en) * | 2007-02-01 | 2011-03-31 | Willard & Kelsey Solar Group Llc | System and method for glass sheet semiconductor coating |
| US8628617B2 (en) * | 2008-12-03 | 2014-01-14 | First Solar, Inc. | System and method for top-down material deposition |
| US8372482B2 (en) * | 2009-02-27 | 2013-02-12 | Goodrich Corporation | Methods and apparatus for controlled chemical vapor deposition |
| JP5719546B2 (ja) * | 2009-09-08 | 2015-05-20 | 東京応化工業株式会社 | 塗布装置及び塗布方法 |
| JP5469966B2 (ja) * | 2009-09-08 | 2014-04-16 | 東京応化工業株式会社 | 塗布装置及び塗布方法 |
| KR101337368B1 (ko) | 2010-10-27 | 2013-12-05 | 엘지디스플레이 주식회사 | 코팅장치 및 이를 이용한 코팅막 형성방법 |
| MY180796A (en) | 2011-09-02 | 2020-12-09 | First Solar Inc | Feeder system and method for a vapor transport deposition system |
| US20130089948A1 (en) * | 2011-10-05 | 2013-04-11 | First Solar, Inc. | Vapor transport deposition method and system for material co-deposition |
| WO2013074345A1 (en) | 2011-11-18 | 2013-05-23 | First Solar, Inc. | Vapor transport deposition method and system for material co-deposition |
| CN104737268A (zh) | 2012-01-12 | 2015-06-24 | 第一太阳能有限公司 | 在半导体器件的不同层中提供掺杂剂浓度控制的方法和系统 |
| EP2809822A1 (de) * | 2012-01-31 | 2014-12-10 | First Solar, Inc | Integriertes dampftransport-abscheidungsverfahren und system |
| US9692039B2 (en) | 2012-07-24 | 2017-06-27 | Quantumscape Corporation | Nanostructured materials for electrochemical conversion reactions |
| WO2014197751A1 (en) | 2013-06-06 | 2014-12-11 | Quantumscape Corporation | Flash evaporation of solid state battery component |
| US20150024538A1 (en) * | 2013-07-19 | 2015-01-22 | Tsmc Solar Ltd. | Vapor dispensing apparatus and method for solar panel |
| US20150243974A1 (en) | 2014-02-25 | 2015-08-27 | Quantumscape Corporation | Hybrid electrodes with both intercalation and conversion materials |
| WO2016025866A1 (en) | 2014-08-15 | 2016-02-18 | Quantumscape Corporation | Doped conversion materials for secondary battery cathodes |
| DE102014117492A1 (de) | 2014-11-28 | 2016-06-02 | Aixtron Se | Vorrichtung zum Abscheiden einer Schicht auf einem Substrat |
| DE102016101856B4 (de) | 2016-02-03 | 2017-11-30 | Ctf Solar Gmbh | Verfahren zum Abscheiden einer CdTe-Schicht auf einem Substrat |
| KR102344996B1 (ko) | 2017-08-18 | 2021-12-30 | 삼성전자주식회사 | 전구체 공급 유닛, 기판 처리 장치 및 그를 이용한 반도체 소자의 제조방법 |
| MY201789A (en) | 2017-10-26 | 2024-03-18 | First Solar Inc | Systems and methods for vaporization and vapor distribution |
| EP3824492A4 (de) | 2018-07-18 | 2022-04-20 | Massachusetts Institute of Technology | Alternierende mehrquellen-dampftransportabscheidung |
| US20210301387A1 (en) | 2018-08-10 | 2021-09-30 | First Solar, Inc. | Systems and methods for vaporization and vapor distribution |
| JP2023515477A (ja) | 2020-02-19 | 2023-04-13 | ファースト・ソーラー・インコーポレーテッド | 蒸気搬送堆積によるペロブスカイトデバイス加工の方法 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4083708A (en) * | 1976-09-15 | 1978-04-11 | Exxon Research & Engineering Co. | Forming a glass on a substrate |
| US4401052A (en) * | 1979-05-29 | 1983-08-30 | The University Of Delaware | Apparatus for continuous deposition by vacuum evaporation |
| US4997677A (en) * | 1987-08-31 | 1991-03-05 | Massachusetts Institute Of Technology | Vapor phase reactor for making multilayer structures |
| DE3801147A1 (de) * | 1988-01-16 | 1989-07-27 | Philips Patentverwaltung | Vorrichtung zum erzeugen eines mit dem dampf eines wenig fluechtigen stoffes angereicherten gasstroms |
| US5204314A (en) * | 1990-07-06 | 1993-04-20 | Advanced Technology Materials, Inc. | Method for delivering an involatile reagent in vapor form to a CVD reactor |
| US5071678A (en) * | 1990-10-09 | 1991-12-10 | United Technologies Corporation | Process for applying gas phase diffusion aluminide coatings |
| US5182567A (en) * | 1990-10-12 | 1993-01-26 | Custom Metallizing Services, Inc. | Retrofittable vapor source for vacuum metallizing utilizing spatter reduction means |
| JP2888026B2 (ja) * | 1992-04-30 | 1999-05-10 | 松下電器産業株式会社 | プラズマcvd装置 |
| US5248349A (en) * | 1992-05-12 | 1993-09-28 | Solar Cells, Inc. | Process for making photovoltaic devices and resultant product |
| FR2713666B1 (fr) * | 1993-12-15 | 1996-01-12 | Air Liquide | Procédé et dispositif de dépôt à basse température d'un film contenant du silicium sur un substrat métallique. |
| TW359943B (en) * | 1994-07-18 | 1999-06-01 | Silicon Valley Group Thermal | Single body injector and method for delivering gases to a surface |
| US5596673A (en) * | 1994-11-18 | 1997-01-21 | Xerox Corporation | Evaporation crucible assembly |
| JP2845773B2 (ja) * | 1995-04-27 | 1999-01-13 | 山形日本電気株式会社 | 常圧cvd装置 |
| US5741363A (en) * | 1996-03-22 | 1998-04-21 | Advanced Technology Materials, Inc. | Interiorly partitioned vapor injector for delivery of source reagent vapor mixtures for chemical vapor deposition |
| US5835678A (en) | 1996-10-03 | 1998-11-10 | Emcore Corporation | Liquid vaporizer system and method |
| US5835687A (en) * | 1996-10-21 | 1998-11-10 | Vidar Systems Corporation | Methods and apparatus for providing digital halftone images with random error diffusion dithering |
| US5882416A (en) * | 1997-06-19 | 1999-03-16 | Advanced Technology Materials, Inc. | Liquid delivery system, heater apparatus for liquid delivery system, and vaporizer |
| US5945163A (en) * | 1998-02-19 | 1999-08-31 | First Solar, Llc | Apparatus and method for depositing a material on a substrate |
| US6037241A (en) * | 1998-02-19 | 2000-03-14 | First Solar, Llc | Apparatus and method for depositing a semiconductor material |
| US6613692B1 (en) * | 1999-07-30 | 2003-09-02 | Tokyo Electron Limited | Substrate processing method and apparatus |
| JP3909792B2 (ja) * | 1999-08-20 | 2007-04-25 | パイオニア株式会社 | 化学気相成長法における原料供給装置及び原料供給方法 |
| US6797108B2 (en) * | 2001-10-05 | 2004-09-28 | Applied Materials, Inc. | Apparatus and method for evenly flowing processing gas onto a semiconductor wafer |
| TWI273642B (en) * | 2002-04-19 | 2007-02-11 | Ulvac Inc | Film-forming apparatus and film-forming method |
| US6915592B2 (en) * | 2002-07-29 | 2005-07-12 | Applied Materials, Inc. | Method and apparatus for generating gas to a processing chamber |
| US7534362B2 (en) * | 2004-07-13 | 2009-05-19 | Savas Stephen E | Uniform etching system and process for large rectangular substrates |
-
2004
- 2004-08-11 US US10/915,695 patent/US7780787B2/en not_active Expired - Fee Related
-
2005
- 2005-07-28 AT AT05777207T patent/ATE526435T1/de not_active IP Right Cessation
- 2005-07-28 WO PCT/US2005/026753 patent/WO2006020409A2/en not_active Ceased
- 2005-07-28 EA EA200700423A patent/EA010965B1/ru not_active IP Right Cessation
- 2005-07-28 EP EP05777207A patent/EP1794346B1/de not_active Expired - Lifetime
-
2010
- 2010-08-20 US US12/860,133 patent/US9085822B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| WO2006020409A2 (en) | 2006-02-23 |
| EA010965B1 (ru) | 2008-12-30 |
| WO2006020409A3 (en) | 2007-07-19 |
| US20060032440A1 (en) | 2006-02-16 |
| US9085822B2 (en) | 2015-07-21 |
| EP1794346B1 (de) | 2011-09-28 |
| EP1794346A2 (de) | 2007-06-13 |
| US7780787B2 (en) | 2010-08-24 |
| US20110039401A1 (en) | 2011-02-17 |
| EA200700423A1 (ru) | 2007-10-26 |
| EP1794346A4 (de) | 2008-12-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |