ATE527211T1 - Neutrale wassrige suspension von kolloidalen kieselsäure - Google Patents

Neutrale wassrige suspension von kolloidalen kieselsäure

Info

Publication number
ATE527211T1
ATE527211T1 AT01101577T AT01101577T ATE527211T1 AT E527211 T1 ATE527211 T1 AT E527211T1 AT 01101577 T AT01101577 T AT 01101577T AT 01101577 T AT01101577 T AT 01101577T AT E527211 T1 ATE527211 T1 AT E527211T1
Authority
AT
Austria
Prior art keywords
silicon
suspension
aqueous suspension
silicic acid
neutral
Prior art date
Application number
AT01101577T
Other languages
English (en)
Inventor
Eric Jacquinot
Maurice Rivoire
Catherine Euvrard
Original Assignee
Az Electronic Materials Usa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Materials Usa filed Critical Az Electronic Materials Usa
Application granted granted Critical
Publication of ATE527211T1 publication Critical patent/ATE527211T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/14—Colloidal silica, e.g. dispersions, gels, sols
    • C01B33/141—Preparation of hydrosols or aqueous dispersions
    • C01B33/142—Preparation of hydrosols or aqueous dispersions by acidic treatment of silicates
    • C01B33/143—Preparation of hydrosols or aqueous dispersions by acidic treatment of silicates of aqueous solutions of silicates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Silicon Compounds (AREA)
AT01101577T 1997-04-07 1998-03-26 Neutrale wassrige suspension von kolloidalen kieselsäure ATE527211T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9704207A FR2761629B1 (fr) 1997-04-07 1997-04-07 Nouveau procede de polissage mecano-chimique de couches de materiaux semi-conducteurs a base de polysilicium ou d'oxyde de silicium dope

Publications (1)

Publication Number Publication Date
ATE527211T1 true ATE527211T1 (de) 2011-10-15

Family

ID=9505584

Family Applications (2)

Application Number Title Priority Date Filing Date
AT98400715T ATE291277T1 (de) 1997-04-07 1998-03-26 Verfahren zum chemisch-mechanischen polieren von halbleitenden oder isolierenden schichten
AT01101577T ATE527211T1 (de) 1997-04-07 1998-03-26 Neutrale wassrige suspension von kolloidalen kieselsäure

Family Applications Before (1)

Application Number Title Priority Date Filing Date
AT98400715T ATE291277T1 (de) 1997-04-07 1998-03-26 Verfahren zum chemisch-mechanischen polieren von halbleitenden oder isolierenden schichten

Country Status (10)

Country Link
US (1) US6126518A (de)
EP (2) EP1111023B1 (de)
JP (1) JP4233629B2 (de)
KR (1) KR100510951B1 (de)
CN (1) CN1152416C (de)
AT (2) ATE291277T1 (de)
DE (1) DE69829329T2 (de)
FR (1) FR2761629B1 (de)
MY (1) MY119523A (de)
SG (1) SG77633A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113045992A (zh) * 2021-03-23 2021-06-29 广东精坚科技有限公司 一种中性抛光液及其制备方法

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FR2781922B1 (fr) 1998-07-31 2001-11-23 Clariant France Sa Procede de polissage mecano-chimique d'une couche en un materiau a base de cuivre
FR2785614B1 (fr) 1998-11-09 2001-01-26 Clariant France Sa Nouveau procede de polissage mecano-chimique selectif entre une couche d'oxyde de silicium et une couche de nitrure de silicium
FR2792643B1 (fr) * 1999-04-22 2001-07-27 Clariant France Sa Composition de polissage mecano-chimique de couches en un materiau isolant a base de polymere a faible constante dielectrique
JP2002050594A (ja) * 2000-08-04 2002-02-15 Fuso Chemical Co Ltd コロイド状シリカスラリー
FR2819244B1 (fr) * 2001-01-09 2003-04-11 Clariant France Sa Nouvelles suspensions aqueuses de silice colloidale anionique de ph neutre et leur procede de preparation, et leurs applications
FR2819245B1 (fr) * 2001-01-09 2004-11-26 Clariant Nouvelles suspensions aqueuses de silice colloidale anionique de ph neutre et leur procede de preparation, et leurs applications
US6939203B2 (en) * 2002-04-18 2005-09-06 Asm Nutool, Inc. Fluid bearing slide assembly for workpiece polishing
US20070286773A1 (en) * 2002-05-16 2007-12-13 Micronit Microfluidics B.V. Microfluidic Device
DE60228685D1 (de) * 2002-05-16 2008-10-16 Micronit Microfluidics Bv Verfahren zur Herstellung eines mikrofluidischen Bauteiles
TW200401816A (en) * 2002-06-03 2004-02-01 Shipley Co Llc Electronic device manufacture
KR101004525B1 (ko) * 2002-08-19 2010-12-31 호야 가부시키가이샤 마스크 블랭크용 글래스 기판 제조 방법, 마스크 블랭크제조방법, 전사 마스크 제조 방법, 반도체 디바이스제조방법, 마스크 블랭크용 글래스 기판, 마스크 블랭크,및 전사 마스크
FR2857895B1 (fr) * 2003-07-23 2007-01-26 Soitec Silicon On Insulator Procede de preparation de surface epiready sur films minces de sic
US20080220610A1 (en) * 2006-06-29 2008-09-11 Cabot Microelectronics Corporation Silicon oxide polishing method utilizing colloidal silica
EP2063461A4 (de) * 2006-09-13 2010-06-02 Asahi Glass Co Ltd Poliermittel für ein integriertes halbleiterschaltungsbauelement, polierverfahren und verfahren zum herstellen eines integrierten halbleiterschaltungsbauelements
JP4411331B2 (ja) * 2007-03-19 2010-02-10 信越化学工業株式会社 磁気記録媒体用シリコン基板およびその製造方法
CN101821835B (zh) * 2007-09-28 2013-03-27 霓达哈斯股份有限公司 研磨用组合物
DE102011079694A1 (de) 2011-07-25 2013-01-31 Carl Zeiss Smt Gmbh Verfahren zum Polieren einer Schicht aus amorphem Silizium
CN107953225A (zh) * 2016-10-14 2018-04-24 上海新昇半导体科技有限公司 半导体晶圆的抛光方法
JP7528681B2 (ja) * 2020-09-29 2024-08-06 住友金属鉱山株式会社 ＳｉＣ多結晶基板の研磨方法
CN114744065B (zh) * 2022-03-23 2024-06-14 中国电子科技集团公司第十一研究所 台面结构芯片的非接触式光刻方法

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US5575706A (en) * 1996-01-11 1996-11-19 Taiwan Semiconductor Manufacturing Company Ltd. Chemical/mechanical planarization (CMP) apparatus and polish method
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113045992A (zh) * 2021-03-23 2021-06-29 广东精坚科技有限公司 一种中性抛光液及其制备方法

Also Published As

Publication number Publication date
FR2761629A1 (fr) 1998-10-09
CN1208248A (zh) 1999-02-17
ATE291277T1 (de) 2005-04-15
KR19980081128A (ko) 1998-11-25
DE69829329D1 (de) 2005-04-21
EP0878838A2 (de) 1998-11-18
CN1152416C (zh) 2004-06-02
EP1111023A3 (de) 2008-01-23
KR100510951B1 (ko) 2005-11-21
HK1018540A1 (en) 1999-12-24
EP0878838A3 (de) 1998-12-16
JPH10308379A (ja) 1998-11-17
FR2761629B1 (fr) 1999-06-18
EP1111023A2 (de) 2001-06-27
DE69829329T2 (de) 2006-04-13
JP4233629B2 (ja) 2009-03-04
SG77633A1 (en) 2001-01-16
EP0878838B1 (de) 2005-03-16
MY119523A (en) 2005-06-30
US6126518A (en) 2000-10-03
EP1111023B1 (de) 2011-10-05

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