ATE527691T1 - Gewundenes schaltkreisbauelement und dessen herstellungsverfahren - Google Patents

Gewundenes schaltkreisbauelement und dessen herstellungsverfahren

Info

Publication number
ATE527691T1
ATE527691T1 AT04776323T AT04776323T ATE527691T1 AT E527691 T1 ATE527691 T1 AT E527691T1 AT 04776323 T AT04776323 T AT 04776323T AT 04776323 T AT04776323 T AT 04776323T AT E527691 T1 ATE527691 T1 AT E527691T1
Authority
AT
Austria
Prior art keywords
production
circuit component
circuit layer
wire circuit
released
Prior art date
Application number
AT04776323T
Other languages
English (en)
Inventor
Harvey Nathanson
Robert Howell
Garrett Storaska
Original Assignee
Northrop Grumman Systems Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northrop Grumman Systems Corp filed Critical Northrop Grumman Systems Corp
Application granted granted Critical
Publication of ATE527691T1 publication Critical patent/ATE527691T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment

Landscapes

  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
AT04776323T 2003-06-06 2004-06-07 Gewundenes schaltkreisbauelement und dessen herstellungsverfahren ATE527691T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US47620003P 2003-06-06 2003-06-06
US53217503P 2003-12-24 2003-12-24
PCT/US2004/017952 WO2004109794A2 (en) 2003-06-06 2004-06-07 Coiled circuit device and method of making the same

Publications (1)

Publication Number Publication Date
ATE527691T1 true ATE527691T1 (de) 2011-10-15

Family

ID=33514072

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04776323T ATE527691T1 (de) 2003-06-06 2004-06-07 Gewundenes schaltkreisbauelement und dessen herstellungsverfahren

Country Status (6)

Country Link
US (1) US7488994B2 (de)
EP (1) EP1636837B1 (de)
JP (1) JP2006527484A (de)
AT (1) ATE527691T1 (de)
TW (1) TW200520170A (de)
WO (1) WO2004109794A2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7795647B2 (en) * 2003-06-06 2010-09-14 Northrop Grumman Systems Corporation Curled semiconductor transistor
US7868358B2 (en) * 2003-06-06 2011-01-11 Northrop Grumman Systems Corporation Coiled circuit device with active circuitry and methods for making the same
US20080009687A1 (en) * 2003-06-06 2008-01-10 Smith Joseph T Coiled circuit bio-sensor
TWI234188B (en) * 2004-08-18 2005-06-11 Ind Tech Res Inst Method for fabricating semiconductor device
WO2007038178A2 (en) * 2005-09-23 2007-04-05 Northrop Grumman Systems Corporation Improved nanocoils, systems and methods for fabricating nanocoils
US7834424B2 (en) * 2006-09-12 2010-11-16 The Board Of Trustees Of The Leland Stanford Junior University Extendable connector and network
WO2008148413A1 (en) * 2007-06-08 2008-12-11 Alex Kleiner Rolled- up micro-solenoids and micro-transformers
US20100221596A1 (en) * 2009-02-06 2010-09-02 Huggins Robert A Systems, methods of manufacture and use involving lithium and/or hydrogen for energy-storage applications
US7902541B2 (en) * 2009-04-03 2011-03-08 International Business Machines Corporation Semiconductor nanowire with built-in stress
US20110019370A1 (en) * 2009-07-27 2011-01-27 Gainteam Holdings Limited Flexible circuit module
WO2013011511A1 (en) 2011-07-18 2013-01-24 Mor Research Applications Ltd. A device for adjusting the intraocular pressure
USD709894S1 (en) * 2012-09-22 2014-07-29 Apple Inc. Electronic device
DE102012221932A1 (de) * 2012-11-30 2014-06-05 Leibniz-Institut für Festkörper- und Werkstoffforschung e.V. Aufgerollte, dreidimensionale Feldeffekttransistoren und ihre Verwendung in der Elektronik, Sensorik und Mikrofluidik
DE102014223873B3 (de) * 2014-11-24 2016-02-04 Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. Verfahren zur Herstellung eines aufgerollten elektrischen oder elektronischen Bauelements
US11444148B2 (en) * 2018-12-17 2022-09-13 Intel Corporation Recoiled metal thin film for 3D inductor with tunable core

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Publication number Priority date Publication date Assignee Title
US4510551A (en) * 1984-05-21 1985-04-09 Endeco Canada Limited Portable memory module
JPH06125153A (ja) * 1992-10-12 1994-05-06 Shinko Electric Ind Co Ltd 窒化アルミニウム回路基板及びその製造方法
US5689136A (en) 1993-08-04 1997-11-18 Hitachi, Ltd. Semiconductor device and fabrication method
US6464687B1 (en) 1999-03-09 2002-10-15 Ball Semiconductor, Inc. Implantable drug delivery system
US6183267B1 (en) * 1999-03-11 2001-02-06 Murray Hill Devices Ultra-miniature electrical contacts and method of manufacture
US6496351B2 (en) * 1999-12-15 2002-12-17 Jds Uniphase Inc. MEMS device members having portions that contact a substrate and associated methods of operating
CA2305069A1 (en) 2000-04-12 2001-10-12 Yanwei Zhang Micromachined element and method of fabrication thereof
WO2001081173A1 (en) * 2000-04-25 2001-11-01 Standard Mems, Inc. Louvers for spacecraft thermal control
US6856225B1 (en) 2000-05-17 2005-02-15 Xerox Corporation Photolithographically-patterned out-of-plane coil structures and method of making
US6396620B1 (en) 2000-10-30 2002-05-28 Mcnc Electrostatically actuated electromagnetic radiation shutter
JP4070176B2 (ja) 2000-12-01 2008-04-02 株式会社山武 球状半導体装置
US6655964B2 (en) 2001-02-09 2003-12-02 Xerox Corporation Low cost integrated out-of-plane micro-device structures and method of making
ITTO20010250A1 (it) * 2001-03-16 2002-09-16 Fiat Ricerche Dispositivo micro-otturatore ottico a controllo elettrostatico con elettrodo fisso non trasparente.
DE10122324A1 (de) 2001-05-08 2002-11-14 Philips Corp Intellectual Pty Flexible integrierte monolithische Schaltung

Also Published As

Publication number Publication date
WO2004109794A2 (en) 2004-12-16
US7488994B2 (en) 2009-02-10
EP1636837B1 (de) 2011-10-05
US20050013151A1 (en) 2005-01-20
TW200520170A (en) 2005-06-16
WO2004109794B1 (en) 2005-09-01
JP2006527484A (ja) 2006-11-30
WO2004109794A3 (en) 2005-04-28
EP1636837A2 (de) 2006-03-22

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Legal Events

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