ATE527702T1 - Mehrschichtige struktur mit einer phasenwechselmaterialschicht und verfahren zu ihrer herstellung - Google Patents
Mehrschichtige struktur mit einer phasenwechselmaterialschicht und verfahren zu ihrer herstellungInfo
- Publication number
- ATE527702T1 ATE527702T1 AT09701756T AT09701756T ATE527702T1 AT E527702 T1 ATE527702 T1 AT E527702T1 AT 09701756 T AT09701756 T AT 09701756T AT 09701756 T AT09701756 T AT 09701756T AT E527702 T1 ATE527702 T1 AT E527702T1
- Authority
- AT
- Austria
- Prior art keywords
- phase change
- change material
- layer
- material layer
- producing
- Prior art date
Links
- 239000012782 phase change material Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010410 layer Substances 0.000 abstract 5
- 238000000059 patterning Methods 0.000 abstract 5
- 239000011241 protective layer Substances 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP08100537 | 2008-01-16 | ||
| PCT/IB2009/050104 WO2009090589A1 (en) | 2008-01-16 | 2009-01-12 | Multilayer structure comprising a phase change material layer and a method of producing the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE527702T1 true ATE527702T1 (de) | 2011-10-15 |
Family
ID=40600189
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT09701756T ATE527702T1 (de) | 2008-01-16 | 2009-01-12 | Mehrschichtige struktur mit einer phasenwechselmaterialschicht und verfahren zu ihrer herstellung |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US8263471B2 (de) |
| EP (1) | EP2232602B1 (de) |
| JP (1) | JP5334995B2 (de) |
| CN (1) | CN101971382B (de) |
| AT (1) | ATE527702T1 (de) |
| WO (1) | WO2009090589A1 (de) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009122349A2 (en) | 2008-04-01 | 2009-10-08 | Nxp B.V. | Vertical phase change memory cell |
| US8932900B2 (en) | 2011-08-24 | 2015-01-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Phase change memory and method of fabricating same |
| US10211054B1 (en) | 2017-11-03 | 2019-02-19 | International Business Machines Corporation | Tone inversion integration for phase change memory |
| US10836828B2 (en) | 2019-02-06 | 2020-11-17 | Pionyr Immunotherapeutics, Inc. | Anti-TREM1 antibodies and related methods |
| US20210288250A1 (en) * | 2020-03-13 | 2021-09-16 | International Business Machines Corporation | Phase Change Memory Having Gradual Reset |
| US12610750B2 (en) * | 2021-12-16 | 2026-04-21 | International Business Machines Corporation | Bridge cell phase change memory |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0198346A3 (de) * | 1985-04-08 | 1989-10-18 | Energy Conversion Devices, Inc. | Den Durchgreifeffekt verwendende Festkörper-Schwellwertelemente |
| KR950007478B1 (ko) * | 1992-06-17 | 1995-07-11 | 금성일렉트론주식회사 | 메탈 마스크 공정시 광반사 감소방법 |
| WO2004034482A2 (en) | 2002-10-11 | 2004-04-22 | Koninklijke Philips Electronics N.V. | Electric device comprising phase change material |
| US8779474B2 (en) | 2002-12-19 | 2014-07-15 | Nxp, B.V. | Electric device comprising phase change material |
| DE60335208D1 (de) | 2002-12-19 | 2011-01-13 | Nxp Bv | Elektrisches bauelement mit einer schicht aus phasenwechsel-material und verfahren zur seiner herstellung |
| EP1475848B1 (de) | 2003-05-07 | 2006-12-20 | STMicroelectronics S.r.l. | Verfahren zur Strukturierung einer Chalkogenid-Schicht, insbesondere in einem Verfahren zur Herstellung von Phasenwechsel-Speicherzellen |
| WO2005011011A1 (en) | 2003-07-21 | 2005-02-03 | Unaxis Usa Inc. | Etching method for making chalcogenide memory elements |
| DE20321085U1 (de) * | 2003-10-23 | 2005-12-29 | Commissariat à l'Energie Atomique | Phasenwechselspeicher, Phasenwechselspeicheranordnung, Phasenwechselspeicherzelle, 2D-Phasenwechselspeicherzellen-Array, 3D-Phasenwechselspeicherzellen-Array und Elektronikbaustein |
| US8115239B2 (en) * | 2004-03-26 | 2012-02-14 | Nxp B.V. | Electric device comprising phase change material |
| US20060040459A1 (en) * | 2004-08-19 | 2006-02-23 | Phan Tony T | Method to produce thin film resistor with no resistor head using dry etch |
| ATE488842T1 (de) | 2004-09-30 | 2010-12-15 | Nxp Bv | Integrierte schaltung mit speicherzellen mit einem programmierbaren widerstand und verfahren zum adressieren von speicherzellen mit einem programmierbaren widerstand |
| WO2006043230A1 (en) | 2004-10-21 | 2006-04-27 | Koninklijke Philips Electronics N.V. | Integrated circuit with phase-change memory cells and method for addressing phase-change memory cells |
| JP2008529269A (ja) | 2005-01-25 | 2008-07-31 | エヌエックスピー ビー ヴィ | バックエンドプロセスを使用する相変化抵抗体の製造 |
| US7321130B2 (en) * | 2005-06-17 | 2008-01-22 | Macronix International Co., Ltd. | Thin film fuse phase change RAM and manufacturing method |
| US8237140B2 (en) * | 2005-06-17 | 2012-08-07 | Macronix International Co., Ltd. | Self-aligned, embedded phase change RAM |
| JP2007073779A (ja) * | 2005-09-07 | 2007-03-22 | Elpida Memory Inc | 不揮発性メモリ素子及びその製造方法 |
| US8062833B2 (en) * | 2005-12-30 | 2011-11-22 | Macronix International Co., Ltd. | Chalcogenide layer etching method |
-
2009
- 2009-01-12 JP JP2010542709A patent/JP5334995B2/ja active Active
- 2009-01-12 EP EP09701756A patent/EP2232602B1/de active Active
- 2009-01-12 US US12/812,009 patent/US8263471B2/en active Active
- 2009-01-12 WO PCT/IB2009/050104 patent/WO2009090589A1/en not_active Ceased
- 2009-01-12 AT AT09701756T patent/ATE527702T1/de not_active IP Right Cessation
- 2009-01-12 CN CN2009801022626A patent/CN101971382B/zh active Active
-
2012
- 2012-09-07 US US13/607,207 patent/US20130001505A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| CN101971382A (zh) | 2011-02-09 |
| WO2009090589A1 (en) | 2009-07-23 |
| US20100276657A1 (en) | 2010-11-04 |
| US20130001505A1 (en) | 2013-01-03 |
| JP5334995B2 (ja) | 2013-11-06 |
| CN101971382B (zh) | 2013-12-25 |
| US8263471B2 (en) | 2012-09-11 |
| EP2232602A1 (de) | 2010-09-29 |
| JP2011510496A (ja) | 2011-03-31 |
| EP2232602B1 (de) | 2011-10-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |