ATE527754T1 - Akustischer volumenwellenresonator und herstellungsverfahren dafür - Google Patents

Akustischer volumenwellenresonator und herstellungsverfahren dafür

Info

Publication number
ATE527754T1
ATE527754T1 AT10158033T AT10158033T ATE527754T1 AT E527754 T1 ATE527754 T1 AT E527754T1 AT 10158033 T AT10158033 T AT 10158033T AT 10158033 T AT10158033 T AT 10158033T AT E527754 T1 ATE527754 T1 AT E527754T1
Authority
AT
Austria
Prior art keywords
region
value
production method
wave resonator
stack
Prior art date
Application number
AT10158033T
Other languages
English (en)
Inventor
Perceval Coudrain
David Petit
Original Assignee
St Microelectronics Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Sa filed Critical St Microelectronics Sa
Application granted granted Critical
Publication of ATE527754T1 publication Critical patent/ATE527754T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
AT10158033T 2009-05-20 2010-03-26 Akustischer volumenwellenresonator und herstellungsverfahren dafür ATE527754T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0953373 2009-05-20

Publications (1)

Publication Number Publication Date
ATE527754T1 true ATE527754T1 (de) 2011-10-15

Family

ID=41449965

Family Applications (1)

Application Number Title Priority Date Filing Date
AT10158033T ATE527754T1 (de) 2009-05-20 2010-03-26 Akustischer volumenwellenresonator und herstellungsverfahren dafür

Country Status (3)

Country Link
US (1) US8456258B2 (de)
EP (1) EP2254243B1 (de)
AT (1) ATE527754T1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9197185B2 (en) 2010-04-29 2015-11-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Resonator device including electrodes with buried temperature compensating layers
US9479139B2 (en) 2010-04-29 2016-10-25 Avago Technologies General Ip (Singapore) Pte. Ltd. Resonator device including electrode with buried temperature compensating layer
JP5904591B2 (ja) * 2012-03-15 2016-04-13 太陽誘電株式会社 弾性波デバイス
US9246467B2 (en) 2012-05-31 2016-01-26 Texas Instruments Incorporated Integrated resonator with a mass bias
CN111082777B (zh) * 2019-12-31 2021-03-12 诺思(天津)微系统有限责任公司 底电极为空隙电极的体声波谐振器、滤波器及电子设备

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4074493B2 (ja) * 2001-08-31 2008-04-09 日本碍子株式会社 セラミック素子
JP3830843B2 (ja) * 2002-03-28 2006-10-11 株式会社東芝 薄膜圧電共振子
US20060017352A1 (en) * 2004-07-20 2006-01-26 Aram Tanielian Thin device and method of fabrication

Also Published As

Publication number Publication date
US8456258B2 (en) 2013-06-04
EP2254243B1 (de) 2011-10-05
US20100295631A1 (en) 2010-11-25
EP2254243A1 (de) 2010-11-24

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Legal Events

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties