ATE529544T1 - Epitaktischer barrelsuszeptor zur verbesserter gleichmässigen dicke einer epitaktischen schicht - Google Patents

Epitaktischer barrelsuszeptor zur verbesserter gleichmässigen dicke einer epitaktischen schicht

Info

Publication number
ATE529544T1
ATE529544T1 AT08866204T AT08866204T ATE529544T1 AT E529544 T1 ATE529544 T1 AT E529544T1 AT 08866204 T AT08866204 T AT 08866204T AT 08866204 T AT08866204 T AT 08866204T AT E529544 T1 ATE529544 T1 AT E529544T1
Authority
AT
Austria
Prior art keywords
epitactic
recess
susceptor
uniform thickness
layer
Prior art date
Application number
AT08866204T
Other languages
English (en)
Inventor
Lance G Hellwig
Srikanth Kommu
John A Pitney
Original Assignee
Memc Electronic Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Memc Electronic Materials filed Critical Memc Electronic Materials
Application granted granted Critical
Publication of ATE529544T1 publication Critical patent/ATE529544T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT08866204T 2007-12-27 2008-12-22 Epitaktischer barrelsuszeptor zur verbesserter gleichmässigen dicke einer epitaktischen schicht ATE529544T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/965,521 US8404049B2 (en) 2007-12-27 2007-12-27 Epitaxial barrel susceptor having improved thickness uniformity
PCT/US2008/087930 WO2009086259A1 (en) 2007-12-27 2008-12-22 Epitaxial barrel susceptor having improved thickness uniformity

Publications (1)

Publication Number Publication Date
ATE529544T1 true ATE529544T1 (de) 2011-11-15

Family

ID=40350145

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08866204T ATE529544T1 (de) 2007-12-27 2008-12-22 Epitaktischer barrelsuszeptor zur verbesserter gleichmässigen dicke einer epitaktischen schicht

Country Status (9)

Country Link
US (1) US8404049B2 (de)
EP (1) EP2222901B1 (de)
JP (1) JP5237390B2 (de)
KR (1) KR101478863B1 (de)
CN (1) CN101910475B (de)
AT (1) ATE529544T1 (de)
MY (1) MY160289A (de)
TW (1) TWI416650B (de)
WO (1) WO2009086259A1 (de)

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US20170221751A1 (en) * 2014-08-22 2017-08-03 Applied Materials, Inc. High speed epitaxy system and methods
US10184193B2 (en) 2015-05-18 2019-01-22 Globalwafers Co., Ltd. Epitaxy reactor and susceptor system for improved epitaxial wafer flatness
US9972740B2 (en) 2015-06-07 2018-05-15 Tesla, Inc. Chemical vapor deposition tool and process for fabrication of photovoltaic structures
US9748434B1 (en) 2016-05-24 2017-08-29 Tesla, Inc. Systems, method and apparatus for curing conductive paste
US9954136B2 (en) 2016-08-03 2018-04-24 Tesla, Inc. Cassette optimized for an inline annealing system
US10115856B2 (en) 2016-10-31 2018-10-30 Tesla, Inc. System and method for curing conductive paste using induction heating
CN106906455A (zh) * 2017-03-30 2017-06-30 河北普兴电子科技股份有限公司 硅外延反应腔用梯形基座
EP3581269B1 (de) 2017-04-11 2022-09-28 Cataler Corporation Katalysator zur abgasreinigung und herstellungsverfahren

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Also Published As

Publication number Publication date
KR20100113067A (ko) 2010-10-20
MY160289A (en) 2017-02-28
TWI416650B (zh) 2013-11-21
JP2011508455A (ja) 2011-03-10
CN101910475A (zh) 2010-12-08
TW200939384A (en) 2009-09-16
US8404049B2 (en) 2013-03-26
CN101910475B (zh) 2013-06-12
KR101478863B1 (ko) 2015-01-02
JP5237390B2 (ja) 2013-07-17
EP2222901B1 (de) 2011-10-19
US20090165719A1 (en) 2009-07-02
WO2009086259A1 (en) 2009-07-09
EP2222901A1 (de) 2010-09-01

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