IT1271233B - Reattore epitassiale munito di suscettore discoidale piano ed avente flusso di gas parallelo ai substrati - Google Patents

Reattore epitassiale munito di suscettore discoidale piano ed avente flusso di gas parallelo ai substrati

Info

Publication number
IT1271233B
IT1271233B ITMI941997A ITMI941997A IT1271233B IT 1271233 B IT1271233 B IT 1271233B IT MI941997 A ITMI941997 A IT MI941997A IT MI941997 A ITMI941997 A IT MI941997A IT 1271233 B IT1271233 B IT 1271233B
Authority
IT
Italy
Prior art keywords
susceptor
chamber
primary inductor
substrates
inductor
Prior art date
Application number
ITMI941997A
Other languages
English (en)
Inventor
Vincenzo Ogliari
Franco Preti
Vittorio Pozzetti
Original Assignee
Lpe
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=11369629&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=IT1271233(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Lpe filed Critical Lpe
Priority to ITMI941997A priority Critical patent/IT1271233B/it
Publication of ITMI941997A0 publication Critical patent/ITMI941997A0/it
Priority to EP95933371A priority patent/EP0730679B1/en
Priority to AT95933371T priority patent/ATE210746T1/de
Priority to ES95933371T priority patent/ES2166833T3/es
Priority to PCT/EP1995/003626 priority patent/WO1996010659A2/en
Priority to DK95933371T priority patent/DK0730679T3/da
Priority to US08/649,586 priority patent/US6022412A/en
Priority to DE69524563T priority patent/DE69524563T2/de
Priority to CN95191347A priority patent/CN1081683C/zh
Priority to KR1019960702832A priority patent/KR100380642B1/ko
Priority to JP51131896A priority patent/JP3967375B2/ja
Priority to PT95933371T priority patent/PT730679E/pt
Publication of ITMI941997A1 publication Critical patent/ITMI941997A1/it
Publication of IT1271233B publication Critical patent/IT1271233B/it
Application granted granted Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

Un reattore epitassiale munito di suscettore discoidale piano comprende una camera di reazione sostanzialmente tubolare appiattita (12) di quarzo contenente, in grado di ruotare, un disco di suscettore (14) munito di una pluralità di cave (16a-h) previste per ospitare una corrispondente pluralità di fette discoidali (18a-h) di materiale da trattare, una vasca (26), riempita di liquido refrigerante (28) corrente, circondante detta camera sostanzialmente tubolare (12), un induttore primario (90) di alimentazione sostanzialmente a forma di spirale piana, posto fuori dalla camera di reazione (12) nella parte inferiore della vasca (26), parallelo al disco di suscettore (14) e dotato di mezzi (118) per modificare la distanza tra ogni singola spira dell'induttore primario (90) ed il disco di suscettore, un eventuale induttore secondario (102) formato da spire disposte parallele e strettamente accoppiate alle spire dell'induttore primario (90), eventuali mezzi (158) per collegare a scelta ogni spira dell'induttore primario (90) a carichi esterni, secondo una tecnica nota, o per chiudere a scelta ogni spira dell'induttore secondario, e mezzi per produrre riflessione massima su tutte le pareti della camera (doratura totale) ed eventuali mezzi (140) per produrre riflessione, anche variabile con continuità, in corrispondenza della faccia della camera sovrastante i substrati.
ITMI941997A 1994-09-30 1994-09-30 Reattore epitassiale munito di suscettore discoidale piano ed avente flusso di gas parallelo ai substrati IT1271233B (it)

Priority Applications (12)

Application Number Priority Date Filing Date Title
ITMI941997A IT1271233B (it) 1994-09-30 1994-09-30 Reattore epitassiale munito di suscettore discoidale piano ed avente flusso di gas parallelo ai substrati
PT95933371T PT730679E (pt) 1994-09-30 1995-09-14 Reactor epitaxial, susceptor e sistema de escoamento de gas
DK95933371T DK0730679T3 (da) 1994-09-30 1995-09-14 Epitaksial reaktor, susceptor og gasstrømningssystem
CN95191347A CN1081683C (zh) 1994-09-30 1995-09-14 一种外延反应器
ES95933371T ES2166833T3 (es) 1994-09-30 1995-09-14 Sistema de reactor epitaxial, susceptor y flujo de gas.
PCT/EP1995/003626 WO1996010659A2 (en) 1994-09-30 1995-09-14 An epitaxial reactor, susceptor and gas-flow system
EP95933371A EP0730679B1 (en) 1994-09-30 1995-09-14 An epitaxial reactor, susceptor and gas-flow system
US08/649,586 US6022412A (en) 1994-09-30 1995-09-14 Epitaxial reactor, susceptor and gas-flow system
DE69524563T DE69524563T2 (de) 1994-09-30 1995-09-14 Epitaxie reaktor, susceptor und gasströmungssystem
AT95933371T ATE210746T1 (de) 1994-09-30 1995-09-14 Epitaxie reaktor, susceptor und gasströmungssystem
KR1019960702832A KR100380642B1 (ko) 1994-09-30 1995-09-14 에피택셜반응기,서셉터및가스유입시스템
JP51131896A JP3967375B2 (ja) 1994-09-30 1995-09-14 エピタキシャル反応器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITMI941997A IT1271233B (it) 1994-09-30 1994-09-30 Reattore epitassiale munito di suscettore discoidale piano ed avente flusso di gas parallelo ai substrati

Publications (3)

Publication Number Publication Date
ITMI941997A0 ITMI941997A0 (it) 1994-09-30
ITMI941997A1 ITMI941997A1 (it) 1996-03-30
IT1271233B true IT1271233B (it) 1997-05-27

Family

ID=11369629

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI941997A IT1271233B (it) 1994-09-30 1994-09-30 Reattore epitassiale munito di suscettore discoidale piano ed avente flusso di gas parallelo ai substrati

Country Status (12)

Country Link
US (1) US6022412A (it)
EP (1) EP0730679B1 (it)
JP (1) JP3967375B2 (it)
KR (1) KR100380642B1 (it)
CN (1) CN1081683C (it)
AT (1) ATE210746T1 (it)
DE (1) DE69524563T2 (it)
DK (1) DK0730679T3 (it)
ES (1) ES2166833T3 (it)
IT (1) IT1271233B (it)
PT (1) PT730679E (it)
WO (1) WO1996010659A2 (it)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19821007A1 (de) * 1998-05-11 1999-11-25 Steag Rtp Systems Gmbh Verfahren und Vorrichtung zum thermischen Behandeln von Substraten
TW544775B (en) * 2001-02-28 2003-08-01 Japan Pionics Chemical vapor deposition apparatus and chemical vapor deposition method
ITMI20020306A1 (it) * 2002-02-15 2003-08-18 Lpe Spa Suscettore dotato di rientranze e reattore epitassiale che utilizza lo stesso
AU2003242099A1 (en) * 2002-06-10 2003-12-22 Tokyo Electron Limited Processing device and processing method
DE10320597A1 (de) * 2003-04-30 2004-12-02 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden von Halbleiterschichten mit zwei Prozessgasen, von denen das eine vorkonditioniert ist
CN100529198C (zh) * 2004-06-09 2009-08-19 Etc外延技术中心有限公司 用于处理装置的支承系统
US8088223B2 (en) * 2005-03-10 2012-01-03 Asm America, Inc. System for control of gas injectors
JP2007149774A (ja) * 2005-11-24 2007-06-14 Sharp Corp 気相成長装置
US8430965B2 (en) * 2007-02-16 2013-04-30 Pronomic Industry Ab Epitaxial growth system for fast heating and cooling
US8067061B2 (en) * 2007-10-25 2011-11-29 Asm America, Inc. Reaction apparatus having multiple adjustable exhaust ports
US8628616B2 (en) 2007-12-11 2014-01-14 Sumitomo Electric Industries, Ltd. Vapor-phase process apparatus, vapor-phase process method, and substrate
US8404049B2 (en) 2007-12-27 2013-03-26 Memc Electronic Materials, Inc. Epitaxial barrel susceptor having improved thickness uniformity
WO2009120859A1 (en) * 2008-03-26 2009-10-01 Gt Solar, Inc. Gold-coated polysilicon reactor system and method
US20100059182A1 (en) * 2008-09-05 2010-03-11 Jusung Engineering Co., Ltd. Substrate processing apparatus
JP5410086B2 (ja) * 2008-12-19 2014-02-05 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶引上装置
US8486191B2 (en) * 2009-04-07 2013-07-16 Asm America, Inc. Substrate reactor with adjustable injectors for mixing gases within reaction chamber
IT1393695B1 (it) 2009-04-17 2012-05-08 Lpe Spa Camera di reazione di un reattore epitassiale e reattore che la utilizza
JP5444961B2 (ja) * 2009-09-01 2014-03-19 東京エレクトロン株式会社 成膜装置及び成膜方法
US9637822B2 (en) * 2009-10-09 2017-05-02 Cree, Inc. Multi-rotation epitaxial growth apparatus and reactors incorporating same
TWM392431U (en) * 2010-02-04 2010-11-11 Epistar Corp Systems for epitaxial growth
CN102330147B (zh) * 2010-07-14 2015-11-25 郭志凯 一种硅片生产外延设备及其系统
JP2012054508A (ja) * 2010-09-03 2012-03-15 Tokyo Electron Ltd 成膜装置
CN102277563A (zh) * 2011-08-03 2011-12-14 深圳大学 一种旋转感应热沉积制备涂层或薄膜的装置及方法
CN102277603A (zh) * 2011-08-03 2011-12-14 深圳大学 一种感应热/电沉积制备涂层或薄膜的装置及方法
CN102347258B (zh) * 2011-09-19 2013-01-09 东莞市中镓半导体科技有限公司 一种用于半导体外延系统的基座
KR101928356B1 (ko) 2012-02-16 2018-12-12 엘지이노텍 주식회사 반도체 제조 장치
CN102707249A (zh) * 2012-07-03 2012-10-03 汤丽萍 一种核磁共振成像仪器的射频线圈
WO2014018564A1 (en) 2012-07-23 2014-01-30 Zieger Claus Dieter Multiple proportion delivery systems and methods
US9842753B2 (en) 2013-04-26 2017-12-12 Applied Materials, Inc. Absorbing lamphead face
WO2014176174A1 (en) * 2013-04-26 2014-10-30 Applied Materials, Inc. Absorbing lamphead face
CN104250849B (zh) * 2013-06-25 2017-03-22 北京北方微电子基地设备工艺研究中心有限责任公司 反应腔室及外延生长设备
US11015244B2 (en) 2013-12-30 2021-05-25 Advanced Material Solutions, Llc Radiation shielding for a CVD reactor
CN105350073B (zh) * 2015-10-30 2018-09-25 中国电子科技集团公司第四十八研究所 一种硅外延设备的石墨盘旋转密封装置及自动上下料系统
IT201600099783A1 (it) * 2016-10-05 2018-04-05 Lpe Spa Reattore per deposizione epitassiale con riflettore esterno alla camera di reazione e metodo di raffreddamento di un suscettore e di substrati
IT201600111143A1 (it) * 2016-11-04 2018-05-04 Lpe Spa Metodo di riscaldamento per un reattore per deposizione epitassiale e reattore per deposizione epitassiale
CN109136885B (zh) * 2017-06-19 2020-11-10 北京北方华创微电子装备有限公司 线圈调节机构、感应加热装置和气相沉积设备
TWI709203B (zh) * 2018-09-11 2020-11-01 大陸商北京北方華創微電子裝備有限公司 腔室冷卻裝置及半導體加工設備
IT202100014984A1 (it) * 2021-06-09 2022-12-09 Lpe Spa Camera di reazione con sistema di rivestimento e reattore epitassiale
CN115161766B (zh) * 2022-07-14 2024-04-26 中国电子科技集团公司第四十八研究所 硅外延设备的石墨基座旋转结构及石墨基座水平调节方法
CN117660917A (zh) * 2023-12-27 2024-03-08 浙江求是半导体设备有限公司 加热装置和外延工艺设备

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3964430A (en) * 1974-11-14 1976-06-22 Unicorp Incorporated Semi-conductor manufacturing reactor instrument with improved reactor tube cooling
US4284867A (en) * 1979-02-09 1981-08-18 General Instrument Corporation Chemical vapor deposition reactor with infrared reflector
JPS5816523A (ja) * 1981-07-23 1983-01-31 Shimada Phys & Chem Ind Co Ltd 半導体気相成長装置
JPS58158438U (ja) * 1982-04-16 1983-10-22 東芝機械株式会社 エピタキシヤル成長装置のコイル保持装置
FR2566808B1 (fr) * 1984-06-27 1986-09-19 Mircea Andrei Procede et reacteur de croissance epitaxiale en phase vapeur
JPS61159574A (ja) * 1984-12-31 1986-07-19 Sony Corp 高周波誘導加熱気相反応装置
US5244694A (en) * 1987-06-24 1993-09-14 Advanced Semiconductor Materials America, Inc. Apparatus for improving the reactant gas flow in a reaction chamber
US5062386A (en) * 1987-07-27 1991-11-05 Epitaxy Systems, Inc. Induction heated pancake epitaxial reactor
US5098857A (en) * 1989-12-22 1992-03-24 International Business Machines Corp. Method of making semi-insulating gallium arsenide by oxygen doping in metal-organic vapor phase epitaxy
EP0448346B1 (en) * 1990-03-19 1997-07-09 Kabushiki Kaisha Toshiba Vapor-phase deposition apparatus
US5536918A (en) * 1991-08-16 1996-07-16 Tokyo Electron Sagami Kabushiki Kaisha Heat treatment apparatus utilizing flat heating elements for treating semiconductor wafers
US5478429A (en) * 1993-01-20 1995-12-26 Tokyo Electron Limited Plasma process apparatus

Also Published As

Publication number Publication date
EP0730679B1 (en) 2001-12-12
DE69524563D1 (de) 2002-01-24
ITMI941997A0 (it) 1994-09-30
KR100380642B1 (ko) 2003-07-23
DE69524563T2 (de) 2002-05-29
CN1139460A (zh) 1997-01-01
WO1996010659A2 (en) 1996-04-11
WO1996010659A3 (en) 1996-05-23
EP0730679A1 (en) 1996-09-11
CN1081683C (zh) 2002-03-27
ES2166833T3 (es) 2002-05-01
PT730679E (pt) 2002-05-31
DK0730679T3 (da) 2002-03-25
JP3967375B2 (ja) 2007-08-29
ITMI941997A1 (it) 1996-03-30
JPH09505798A (ja) 1997-06-10
US6022412A (en) 2000-02-08
KR960706577A (ko) 1996-12-09
ATE210746T1 (de) 2001-12-15

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Effective date: 19970901