ATE529865T1 - Nanoröhrchen-geräte mit zwei anschlüssen sowie entsprechende systeme und herstellungsverfahren dafür - Google Patents

Nanoröhrchen-geräte mit zwei anschlüssen sowie entsprechende systeme und herstellungsverfahren dafür

Info

Publication number
ATE529865T1
ATE529865T1 AT06759469T AT06759469T ATE529865T1 AT E529865 T1 ATE529865 T1 AT E529865T1 AT 06759469 T AT06759469 T AT 06759469T AT 06759469 T AT06759469 T AT 06759469T AT E529865 T1 ATE529865 T1 AT E529865T1
Authority
AT
Austria
Prior art keywords
terminals
connections
production processes
corresponding systems
nanotube
Prior art date
Application number
AT06759469T
Other languages
English (en)
Inventor
Frank Guo
Mitchell Meinhold
Steven Konsek
Thomas Rueckes
X Huang
Ramesh Sivarajan
Max Strasburg
Claude Bertin
Original Assignee
Nantero Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nantero Inc filed Critical Nantero Inc
Application granted granted Critical
Publication of ATE529865T1 publication Critical patent/ATE529865T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G11C17/165—Memory cells which are electrically programmed to cause a change in resistance, e.g. to permit multiple resistance steps to be programmed rather than conduct to or from non-conduct change of fuses and antifuses
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/19—Memory cell comprising at least a nanowire and only two terminals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/943—Information storage or retrieval using nanostructure

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Saccharide Compounds (AREA)
AT06759469T 2005-05-09 2006-05-09 Nanoröhrchen-geräte mit zwei anschlüssen sowie entsprechende systeme und herstellungsverfahren dafür ATE529865T1 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US67902905P 2005-05-09 2005-05-09
US69291805P 2005-06-22 2005-06-22
US69276505P 2005-06-22 2005-06-22
US69289105P 2005-06-22 2005-06-22
US11/280,786 US7781862B2 (en) 2005-05-09 2005-11-15 Two-terminal nanotube devices and systems and methods of making same
PCT/US2006/018043 WO2007053180A1 (en) 2005-05-09 2006-05-09 Two-terminal nanotube devices and systems and methods of making same

Publications (1)

Publication Number Publication Date
ATE529865T1 true ATE529865T1 (de) 2011-11-15

Family

ID=38006179

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06759469T ATE529865T1 (de) 2005-05-09 2006-05-09 Nanoröhrchen-geräte mit zwei anschlüssen sowie entsprechende systeme und herstellungsverfahren dafür

Country Status (7)

Country Link
US (3) US7781862B2 (de)
EP (1) EP1880420B1 (de)
CN (1) CN102176456B (de)
AT (1) ATE529865T1 (de)
CA (1) CA2608056C (de)
TW (1) TWI329348B (de)
WO (1) WO2007053180A1 (de)

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CA2608056C (en) 2016-07-26
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US20110220859A1 (en) 2011-09-15
US20080012047A1 (en) 2008-01-17
CN102176456A (zh) 2011-09-07
US7948054B2 (en) 2011-05-24
US7781862B2 (en) 2010-08-24
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CN102176456B (zh) 2014-07-30
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