ATE529890T1 - Stromversorgungsgerät und auftragungsverfahren unter verwendung des stromversorgungsgeräts - Google Patents
Stromversorgungsgerät und auftragungsverfahren unter verwendung des stromversorgungsgerätsInfo
- Publication number
- ATE529890T1 ATE529890T1 AT07121902T AT07121902T ATE529890T1 AT E529890 T1 ATE529890 T1 AT E529890T1 AT 07121902 T AT07121902 T AT 07121902T AT 07121902 T AT07121902 T AT 07121902T AT E529890 T1 ATE529890 T1 AT E529890T1
- Authority
- AT
- Austria
- Prior art keywords
- power supply
- supply apparatus
- annular member
- conductive annular
- application method
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
- H10P72/722—Details of electrostatic chucks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0431—Apparatus for thermal treatment
- H10P72/0434—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2001—Maintaining constant desired temperature
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T279/00—Chucks or sockets
- Y10T279/23—Chucks or sockets with magnetic or electrostatic means
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006322747 | 2006-11-30 | ||
| JP2007275635A JP4768699B2 (ja) | 2006-11-30 | 2007-10-23 | 電力導入装置及び成膜方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE529890T1 true ATE529890T1 (de) | 2011-11-15 |
Family
ID=39048010
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT07121902T ATE529890T1 (de) | 2006-11-30 | 2007-11-29 | Stromversorgungsgerät und auftragungsverfahren unter verwendung des stromversorgungsgeräts |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8182660B2 (de) |
| EP (1) | EP1928019B1 (de) |
| JP (1) | JP4768699B2 (de) |
| CN (1) | CN100552913C (de) |
| AT (1) | ATE529890T1 (de) |
Families Citing this family (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102008062332A1 (de) * | 2008-12-15 | 2010-06-17 | Gühring Ohg | Vorrichtung zur Oberflächenbehandlung und/oder -beschichtung von Substratkomponenten |
| WO2010073330A1 (ja) * | 2008-12-25 | 2010-07-01 | キヤノンアネルバ株式会社 | スパッタリング装置 |
| KR20110137331A (ko) * | 2009-03-20 | 2011-12-22 | 어플라이드 머티어리얼스, 인코포레이티드 | 고온의 회전가능한 타겟을 가진 증착 장치와 그 작동 방법 |
| US20100236920A1 (en) * | 2009-03-20 | 2010-09-23 | Applied Materials, Inc. | Deposition apparatus with high temperature rotatable target and method of operating thereof |
| JP4875190B2 (ja) | 2009-08-31 | 2012-02-15 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法 |
| US8776542B2 (en) | 2009-12-25 | 2014-07-15 | Canon Anelva Corporation | Cooling system |
| JP2011165891A (ja) * | 2010-02-09 | 2011-08-25 | Tokyo Electron Ltd | 載置台構造及び処理装置 |
| CN101882568B (zh) * | 2010-07-07 | 2012-07-04 | 无锡华晶电子设备制造有限公司 | 分割机构 |
| WO2012011149A1 (ja) * | 2010-07-21 | 2012-01-26 | キヤノンアネルバ株式会社 | 電力導入装置及び電力導入装置を用いた真空処理装置 |
| US9398796B2 (en) * | 2011-03-22 | 2016-07-26 | The Beachwaver Co. | Hair styling device |
| WO2013088603A1 (ja) * | 2011-12-13 | 2013-06-20 | キヤノンアネルバ株式会社 | 電力導入装置及び電力導入装置を用いた真空処理装置 |
| JP5877850B2 (ja) * | 2011-12-15 | 2016-03-08 | キヤノンアネルバ株式会社 | 基板ホルダ装置および真空処理装置 |
| JPWO2013088598A1 (ja) * | 2011-12-15 | 2015-04-27 | キヤノンアネルバ株式会社 | 基板ホルダ装置および真空処理装置 |
| KR101173578B1 (ko) * | 2012-03-09 | 2012-08-13 | 윈텍 주식회사 | 정전 유도 흡착식 전자부품 검사 테이블 |
| JP5894045B2 (ja) * | 2012-09-14 | 2016-03-23 | イーグルブルグマンジャパン株式会社 | 密封構造 |
| KR101994229B1 (ko) * | 2012-12-21 | 2019-09-24 | 주식회사 원익아이피에스 | 기판 처리 장치 |
| CN103913876B (zh) * | 2014-03-17 | 2017-07-04 | 京东方科技集团股份有限公司 | 一种用于干法刻蚀的承载装置及干法刻蚀装置 |
| CN105448774B (zh) * | 2014-08-29 | 2019-11-29 | 北京北方华创微电子装备有限公司 | 一种等离子体加工设备 |
| US10546768B2 (en) * | 2015-02-25 | 2020-01-28 | Corning Incorporated | Apparatus and method to electrostatically chuck substrates to a moving carrier |
| JP6449091B2 (ja) * | 2015-04-20 | 2019-01-09 | 東京エレクトロン株式会社 | スリップリング、支持機構及びプラズマ処理装置 |
| US10177024B2 (en) * | 2015-05-12 | 2019-01-08 | Lam Research Corporation | High temperature substrate pedestal module and components thereof |
| TWI725067B (zh) * | 2015-10-28 | 2021-04-21 | 美商應用材料股份有限公司 | 可旋轉靜電夾盤 |
| WO2018162070A1 (de) * | 2017-03-09 | 2018-09-13 | Ev Group E. Thallner Gmbh | Elektrostatische substrathalterung |
| KR102088356B1 (ko) * | 2018-03-09 | 2020-03-12 | (주)씨앤아이테크놀로지 | 박막 증착 장치 및 박막 증착 방법 |
| US11289355B2 (en) | 2017-06-02 | 2022-03-29 | Lam Research Corporation | Electrostatic chuck for use in semiconductor processing |
| JP7208168B2 (ja) * | 2017-06-16 | 2023-01-18 | チュソン エンジニアリング カンパニー,リミテッド | 基板処理装置及び真空回転電気コネクタ |
| PL3648554T3 (pl) * | 2017-06-27 | 2021-11-22 | Canon Anelva Corporation | Urządzenie do przetwarzania plazmowego |
| EP3648550B1 (de) * | 2017-06-27 | 2021-06-02 | Canon Anelva Corporation | Plasmabehandlungsvorrichtung |
| EP4017223B1 (de) * | 2017-06-27 | 2025-10-15 | Canon Anelva Corporation | Plasmaverarbeitungsvorrichtung |
| CN114666965B (zh) | 2017-06-27 | 2025-08-01 | 佳能安内华股份有限公司 | 等离子体处理装置 |
| US11469084B2 (en) | 2017-09-05 | 2022-10-11 | Lam Research Corporation | High temperature RF connection with integral thermal choke |
| US11149345B2 (en) * | 2017-12-11 | 2021-10-19 | Applied Materials, Inc. | Cryogenically cooled rotatable electrostatic chuck |
| KR20260008190A (ko) | 2018-01-31 | 2026-01-15 | 램 리써치 코포레이션 | 정전 척 페데스탈 전압 분리 |
| US11086233B2 (en) | 2018-03-20 | 2021-08-10 | Lam Research Corporation | Protective coating for electrostatic chucks |
| CN110396664B (zh) * | 2018-04-24 | 2020-10-13 | 北京北方华创微电子装备有限公司 | 接地环、腔室以及物理气相沉积设备 |
| PL3817517T3 (pl) | 2018-06-26 | 2024-10-28 | Canon Anelva Corporation | Urządzenie do obróbki plazmą, sposób obróbki plazmą, program oraz nośnik pamięci |
| US11183368B2 (en) | 2018-08-02 | 2021-11-23 | Lam Research Corporation | RF tuning systems including tuning circuits having impedances for setting and adjusting parameters of electrodes in electrostatic chucks |
| US20220056590A1 (en) * | 2018-09-27 | 2022-02-24 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
| JP7292919B2 (ja) * | 2018-09-27 | 2023-06-19 | 東京エレクトロン株式会社 | 基板処理装置 |
| CN110957243B (zh) * | 2018-09-27 | 2024-08-13 | 东京毅力科创株式会社 | 基板处理装置 |
| CN211957594U (zh) * | 2020-05-29 | 2020-11-17 | 北京鲁汶半导体科技有限公司 | 一种离子束刻蚀旋转平台 |
| CN217791843U (zh) * | 2022-08-11 | 2022-11-15 | 深圳市乐美科技有限公司 | 卷发器 |
| GB202319929D0 (en) | 2023-12-22 | 2024-02-07 | Spts Technologies Ltd | Pvd apparatus and method |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6140031A (ja) * | 1984-07-31 | 1986-02-26 | Tokuda Seisakusho Ltd | 真空処理装置 |
| JPS62111770A (ja) * | 1985-11-12 | 1987-05-22 | Canon Inc | ワイヤドツトヘツドの可動体構造 |
| US5542559A (en) * | 1993-02-16 | 1996-08-06 | Tokyo Electron Kabushiki Kaisha | Plasma treatment apparatus |
| US5982986A (en) | 1995-02-03 | 1999-11-09 | Applied Materials, Inc. | Apparatus and method for rotationally aligning and degassing semiconductor substrate within single vacuum chamber |
| US5980706A (en) * | 1996-07-15 | 1999-11-09 | Semitool, Inc. | Electrode semiconductor workpiece holder |
| JPH10186918A (ja) * | 1996-12-27 | 1998-07-14 | Minolta Co Ltd | 加熱ローラ装置 |
| US6198616B1 (en) * | 1998-04-03 | 2001-03-06 | Applied Materials, Inc. | Method and apparatus for supplying a chucking voltage to an electrostatic chuck within a semiconductor wafer processing system |
| US6106676A (en) * | 1998-04-16 | 2000-08-22 | The Boc Group, Inc. | Method and apparatus for reactive sputtering employing two control loops |
| US6395095B1 (en) * | 1999-06-15 | 2002-05-28 | Tokyo Electron Limited | Process apparatus and method for improved plasma processing of a substrate |
| JP2002339064A (ja) * | 2001-05-16 | 2002-11-27 | Anelva Corp | 真空処理装置 |
| JP4493251B2 (ja) * | 2001-12-04 | 2010-06-30 | Toto株式会社 | 静電チャックモジュールおよび基板処理装置 |
| JP3688243B2 (ja) * | 2002-02-18 | 2005-08-24 | 株式会社日立国際電気 | 半導体製造装置 |
| US7151658B2 (en) * | 2003-04-22 | 2006-12-19 | Axcelis Technologies, Inc. | High-performance electrostatic clamp comprising a resistive layer, micro-grooves, and dielectric layer |
| CN100382275C (zh) * | 2004-10-29 | 2008-04-16 | 东京毅力科创株式会社 | 基板载置台、基板处理装置及基板的温度控制方法 |
-
2007
- 2007-10-23 JP JP2007275635A patent/JP4768699B2/ja active Active
- 2007-11-26 US US11/945,256 patent/US8182660B2/en active Active
- 2007-11-29 AT AT07121902T patent/ATE529890T1/de not_active IP Right Cessation
- 2007-11-29 EP EP07121902A patent/EP1928019B1/de active Active
- 2007-11-30 CN CN200710196055.4A patent/CN100552913C/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN101192557A (zh) | 2008-06-04 |
| EP1928019B1 (de) | 2011-10-19 |
| EP1928019A2 (de) | 2008-06-04 |
| JP4768699B2 (ja) | 2011-09-07 |
| US20080258411A1 (en) | 2008-10-23 |
| CN100552913C (zh) | 2009-10-21 |
| US8182660B2 (en) | 2012-05-22 |
| EP1928019A3 (de) | 2010-06-02 |
| JP2008156746A (ja) | 2008-07-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |