ATE529890T1 - Stromversorgungsgerät und auftragungsverfahren unter verwendung des stromversorgungsgeräts - Google Patents

Stromversorgungsgerät und auftragungsverfahren unter verwendung des stromversorgungsgeräts

Info

Publication number
ATE529890T1
ATE529890T1 AT07121902T AT07121902T ATE529890T1 AT E529890 T1 ATE529890 T1 AT E529890T1 AT 07121902 T AT07121902 T AT 07121902T AT 07121902 T AT07121902 T AT 07121902T AT E529890 T1 ATE529890 T1 AT E529890T1
Authority
AT
Austria
Prior art keywords
power supply
supply apparatus
annular member
conductive annular
application method
Prior art date
Application number
AT07121902T
Other languages
English (en)
Inventor
Yasushi Miura
Kazunari Sekiya
Original Assignee
Canon Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp filed Critical Canon Anelva Corp
Application granted granted Critical
Publication of ATE529890T1 publication Critical patent/ATE529890T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/23—Chucks or sockets with magnetic or electrostatic means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Hall/Mr Elements (AREA)
AT07121902T 2006-11-30 2007-11-29 Stromversorgungsgerät und auftragungsverfahren unter verwendung des stromversorgungsgeräts ATE529890T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006322747 2006-11-30
JP2007275635A JP4768699B2 (ja) 2006-11-30 2007-10-23 電力導入装置及び成膜方法

Publications (1)

Publication Number Publication Date
ATE529890T1 true ATE529890T1 (de) 2011-11-15

Family

ID=39048010

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07121902T ATE529890T1 (de) 2006-11-30 2007-11-29 Stromversorgungsgerät und auftragungsverfahren unter verwendung des stromversorgungsgeräts

Country Status (5)

Country Link
US (1) US8182660B2 (de)
EP (1) EP1928019B1 (de)
JP (1) JP4768699B2 (de)
CN (1) CN100552913C (de)
AT (1) ATE529890T1 (de)

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CN105448774B (zh) * 2014-08-29 2019-11-29 北京北方华创微电子装备有限公司 一种等离子体加工设备
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JP6449091B2 (ja) * 2015-04-20 2019-01-09 東京エレクトロン株式会社 スリップリング、支持機構及びプラズマ処理装置
US10177024B2 (en) * 2015-05-12 2019-01-08 Lam Research Corporation High temperature substrate pedestal module and components thereof
TWI725067B (zh) * 2015-10-28 2021-04-21 美商應用材料股份有限公司 可旋轉靜電夾盤
WO2018162070A1 (de) * 2017-03-09 2018-09-13 Ev Group E. Thallner Gmbh Elektrostatische substrathalterung
KR102088356B1 (ko) * 2018-03-09 2020-03-12 (주)씨앤아이테크놀로지 박막 증착 장치 및 박막 증착 방법
US11289355B2 (en) 2017-06-02 2022-03-29 Lam Research Corporation Electrostatic chuck for use in semiconductor processing
WO2018230883A1 (ko) * 2017-06-16 2018-12-20 주성엔지니어링(주) 기판 처리 장치 및 진공용 회전 전기 커넥터
JP6458206B1 (ja) * 2017-06-27 2019-01-23 キヤノンアネルバ株式会社 プラズマ処理装置
JP6280677B1 (ja) * 2017-06-27 2018-02-14 キヤノンアネルバ株式会社 プラズマ処理装置
WO2019003309A1 (ja) 2017-06-27 2019-01-03 キヤノンアネルバ株式会社 プラズマ処理装置
PL3648552T3 (pl) * 2017-06-27 2022-06-13 Canon Anelva Corporation Urządzenie do obróbki plazmowej
US11469084B2 (en) 2017-09-05 2022-10-11 Lam Research Corporation High temperature RF connection with integral thermal choke
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WO2019152528A1 (en) * 2018-01-31 2019-08-08 Lam Research Corporation Electrostatic chuck (esc) pedestal voltage isolation
US11086233B2 (en) 2018-03-20 2021-08-10 Lam Research Corporation Protective coating for electrostatic chucks
CN110396664B (zh) * 2018-04-24 2020-10-13 北京北方华创微电子装备有限公司 接地环、腔室以及物理气相沉积设备
EP4425529A3 (de) 2018-06-26 2024-12-11 Canon Anelva Corporation Plasmaverarbeitungsvorrichtung, plasmaverarbeitungsverfahren, programm und speichermedium
US11183368B2 (en) 2018-08-02 2021-11-23 Lam Research Corporation RF tuning systems including tuning circuits having impedances for setting and adjusting parameters of electrodes in electrostatic chucks
JP7194747B2 (ja) * 2018-09-27 2022-12-22 東京エレクトロン株式会社 基板処理装置および基板処理方法
JP7292919B2 (ja) * 2018-09-27 2023-06-19 東京エレクトロン株式会社 基板処理装置
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CN211957594U (zh) * 2020-05-29 2020-11-17 北京鲁汶半导体科技有限公司 一种离子束刻蚀旋转平台
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Also Published As

Publication number Publication date
US20080258411A1 (en) 2008-10-23
CN100552913C (zh) 2009-10-21
CN101192557A (zh) 2008-06-04
JP2008156746A (ja) 2008-07-10
EP1928019B1 (de) 2011-10-19
JP4768699B2 (ja) 2011-09-07
EP1928019A3 (de) 2010-06-02
US8182660B2 (en) 2012-05-22
EP1928019A2 (de) 2008-06-04

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Legal Events

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties