ATE530312T1 - Vorrichtung zum abtrennen einer schicht von einem substrat und verfahren dafür - Google Patents

Vorrichtung zum abtrennen einer schicht von einem substrat und verfahren dafür

Info

Publication number
ATE530312T1
ATE530312T1 AT02799856T AT02799856T ATE530312T1 AT E530312 T1 ATE530312 T1 AT E530312T1 AT 02799856 T AT02799856 T AT 02799856T AT 02799856 T AT02799856 T AT 02799856T AT E530312 T1 ATE530312 T1 AT E530312T1
Authority
AT
Austria
Prior art keywords
assembly
providing
pressure zone
separating
substrate
Prior art date
Application number
AT02799856T
Other languages
English (en)
Inventor
Olivier Rayssac
Fabrice Letertre
Original Assignee
Soitec Silicon On Insulator
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator
Application granted granted Critical
Publication of ATE530312T1 publication Critical patent/ATE530312T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0017—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools
    • B28D5/0023—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools rectilinearly
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0052—Means for supporting or holding work during breaking
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0064—Devices for the automatic drive or the program control of the machines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
    • Y10T156/1126—Using direct fluid current against work during delaminating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
    • Y10T156/1168—Gripping and pulling work apart during delaminating
    • Y10T156/1179—Gripping and pulling work apart during delaminating with poking during delaminating [e.g., jabbing, etc.]
    • Y10T156/1184—Piercing layer during delaminating [e.g., cutting, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/19—Delaminating means
    • Y10T156/1928—Differential fluid pressure delaminating means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/19—Delaminating means
    • Y10T156/1961—Severing delaminating means [e.g., chisel, etc.]
    • Y10T156/1967—Cutting delaminating means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/19—Delaminating means
    • Y10T156/1961—Severing delaminating means [e.g., chisel, etc.]
    • Y10T156/1967—Cutting delaminating means
    • Y10T156/1972—Shearing delaminating means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T83/00—Cutting
    • Y10T83/364—By fluid blast and/or suction

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Dicing (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Electronic Switches (AREA)
  • Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
AT02799856T 2002-01-03 2002-12-31 Vorrichtung zum abtrennen einer schicht von einem substrat und verfahren dafür ATE530312T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0200024A FR2834380B1 (fr) 2002-01-03 2002-01-03 Dispositif de coupe de couche d'un substrat, et procede associe
PCT/FR2002/004594 WO2003059590A1 (fr) 2002-01-03 2002-12-31 Dispositif de coupe de couche d'un substrat, et procede associe

Publications (1)

Publication Number Publication Date
ATE530312T1 true ATE530312T1 (de) 2011-11-15

Family

ID=8871141

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02799856T ATE530312T1 (de) 2002-01-03 2002-12-31 Vorrichtung zum abtrennen einer schicht von einem substrat und verfahren dafür

Country Status (8)

Country Link
US (2) US7232738B2 (de)
EP (1) EP1461190B1 (de)
JP (1) JP4813019B2 (de)
AT (1) ATE530312T1 (de)
AU (1) AU2002364490A1 (de)
FR (1) FR2834380B1 (de)
TW (1) TWI273646B (de)
WO (1) WO2003059590A1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101080360B (zh) * 2004-10-21 2012-10-31 富士胶卷迪马蒂克斯股份有限公司 用于蚀刻的牺牲基底
CN1312465C (zh) * 2005-01-31 2007-04-25 哈尔滨工业大学 用于测量硅片键合强度的装置
FR2906933B1 (fr) * 2006-10-06 2009-02-13 Commissariat Energie Atomique Dispositif de separation d'une structure empilee et procede associe
KR100891384B1 (ko) * 2007-06-14 2009-04-02 삼성모바일디스플레이주식회사 플렉서블 기판 접합 및 탈착장치
US20110168317A1 (en) * 2010-01-12 2011-07-14 Fujifilm Corporation Controlled Bond Wave Over Patterned Wafer
FR2977069B1 (fr) 2011-06-23 2014-02-07 Soitec Silicon On Insulator Procede de fabrication d'une structure semi-conductrice mettant en oeuvre un collage temporaire
ITFI20120233A1 (it) * 2012-10-29 2014-04-30 Esanastri S R L Dispositivo di micro-sfridatura di film plastici o in carta a uno o più strati autoadesivi, biadesivizzati o elettrostatici accoppiati con un liner di supporto antiaderente
JP5993731B2 (ja) * 2012-12-04 2016-09-14 東京エレクトロン株式会社 剥離装置、剥離システムおよび剥離方法
JP5909453B2 (ja) * 2013-03-07 2016-04-26 東京エレクトロン株式会社 剥離装置、剥離システムおよび剥離方法
US9508586B2 (en) * 2014-10-17 2016-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Debonding schemes
DE102015101897A1 (de) 2015-02-10 2016-08-11 Ev Group E. Thallner Gmbh Vorrichtung und Verfahren zum zumindest teilweisen Lösen einer Verbindungsschicht eines temporär verbondeten Substratstapels
KR102390987B1 (ko) * 2015-09-08 2022-04-27 삼성전자주식회사 반도체 소자 및 이를 제조하기 위한 방법
CN108039327A (zh) * 2017-12-06 2018-05-15 德淮半导体有限公司 一种晶圆处理装置以及自动测量晶圆键合能量的系统
CN111458289A (zh) * 2020-04-03 2020-07-28 长江存储科技有限责任公司 键合能的测试设备及方法、键合设备工艺参数确定方法
JP7822139B2 (ja) * 2021-08-18 2026-03-02 東京エレクトロン株式会社 剥離方法、剥離装置および剥離システム

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2068291B (en) * 1980-01-22 1982-12-15 Penrhyn Quarries Ltd Apparatus for and a method of cleaving laminated material
JPH09263500A (ja) * 1996-01-22 1997-10-07 Komatsu Electron Metals Co Ltd 貼り合わせｓｏｉウェーハの剥がし治具
US5994207A (en) * 1997-05-12 1999-11-30 Silicon Genesis Corporation Controlled cleavage process using pressurized fluid
JP2001525991A (ja) * 1997-05-12 2001-12-11 シリコン・ジェネシス・コーポレーション 制御された劈開プロセス
US6033974A (en) * 1997-05-12 2000-03-07 Silicon Genesis Corporation Method for controlled cleaving process
SG87916A1 (en) * 1997-12-26 2002-04-16 Canon Kk Sample separating apparatus and method, and substrate manufacturing method
JP2000100678A (ja) 1998-09-25 2000-04-07 Canon Inc 試料の分離装置及び分離方法並びに半導体基板の製造方法
FR2785217B1 (fr) * 1998-10-30 2001-01-19 Soitec Silicon On Insulator Procede et dispositif pour separer en deux tranches une plaque de materiau notamment semi-conducteur
FR2796491B1 (fr) * 1999-07-12 2001-08-31 Commissariat Energie Atomique Procede de decollement de deux elements et dispositif pour sa mise en oeuvre
US6221740B1 (en) * 1999-08-10 2001-04-24 Silicon Genesis Corporation Substrate cleaving tool and method
US6653205B2 (en) * 1999-12-08 2003-11-25 Canon Kabushiki Kaisha Composite member separating method, thin film manufacturing method, and composite member separating apparatus

Also Published As

Publication number Publication date
FR2834380A1 (fr) 2003-07-04
US20070148915A1 (en) 2007-06-28
JP4813019B2 (ja) 2011-11-09
US20050009297A1 (en) 2005-01-13
EP1461190B1 (de) 2011-10-26
FR2834380B1 (fr) 2005-02-18
AU2002364490A1 (en) 2003-07-30
WO2003059590A1 (fr) 2003-07-24
JP2005514240A (ja) 2005-05-19
TW200401353A (en) 2004-01-16
TWI273646B (en) 2007-02-11
EP1461190A1 (de) 2004-09-29
US7892946B2 (en) 2011-02-22
WO2003059590A8 (fr) 2004-06-03
US7232738B2 (en) 2007-06-19

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Legal Events

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