ATE272465T1 - Verfahren zur oberflächenmodifizierung von einem strukturierten wafer - Google Patents

Verfahren zur oberflächenmodifizierung von einem strukturierten wafer

Info

Publication number
ATE272465T1
ATE272465T1 AT99956604T AT99956604T ATE272465T1 AT E272465 T1 ATE272465 T1 AT E272465T1 AT 99956604 T AT99956604 T AT 99956604T AT 99956604 T AT99956604 T AT 99956604T AT E272465 T1 ATE272465 T1 AT E272465T1
Authority
AT
Austria
Prior art keywords
phase
surface modification
modified
structured wafer
abrasive article
Prior art date
Application number
AT99956604T
Other languages
English (en)
Inventor
Daniel B Pendergrass Jr
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Application granted granted Critical
Publication of ATE272465T1 publication Critical patent/ATE272465T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B24B37/245—Pads with fixed abrasives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
AT99956604T 1999-06-09 1999-10-18 Verfahren zur oberflächenmodifizierung von einem strukturierten wafer ATE272465T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/328,916 US6234875B1 (en) 1999-06-09 1999-06-09 Method of modifying a surface
PCT/US1999/024445 WO2000074896A1 (en) 1999-06-09 1999-10-18 Method of modifying a surface of a structured wafer

Publications (1)

Publication Number Publication Date
ATE272465T1 true ATE272465T1 (de) 2004-08-15

Family

ID=23283024

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99956604T ATE272465T1 (de) 1999-06-09 1999-10-18 Verfahren zur oberflächenmodifizierung von einem strukturierten wafer

Country Status (14)

Country Link
US (1) US6234875B1 (de)
EP (1) EP1189729B1 (de)
JP (1) JP2003501820A (de)
KR (1) KR100638289B1 (de)
CN (1) CN1352589A (de)
AT (1) ATE272465T1 (de)
AU (1) AU1317500A (de)
BR (1) BR9917355A (de)
CA (1) CA2374004A1 (de)
DE (1) DE69919230T2 (de)
ES (1) ES2224717T3 (de)
HK (1) HK1044504B (de)
TW (1) TWI231245B (de)
WO (1) WO2000074896A1 (de)

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US6641463B1 (en) 1999-02-06 2003-11-04 Beaver Creek Concepts Inc Finishing components and elements
TW501197B (en) * 1999-08-17 2002-09-01 Hitachi Chemical Co Ltd Polishing compound for chemical mechanical polishing and method for polishing substrate
US7736687B2 (en) * 2006-01-31 2010-06-15 Advance Bio Prosthetic Surfaces, Ltd. Methods of making medical devices
US6976905B1 (en) * 2000-06-16 2005-12-20 Cabot Microelectronics Corporation Method for polishing a memory or rigid disk with a phosphate ion-containing polishing system
KR100867339B1 (ko) * 2000-12-01 2008-11-06 도요 고무 고교 가부시키가이샤 연마 패드 및 그 제조 방법
US6561889B1 (en) 2000-12-27 2003-05-13 Lam Research Corporation Methods for making reinforced wafer polishing pads and apparatuses implementing the same
US6572463B1 (en) * 2000-12-27 2003-06-03 Lam Research Corp. Methods for making reinforced wafer polishing pads utilizing direct casting and apparatuses implementing the same
US6612916B2 (en) * 2001-01-08 2003-09-02 3M Innovative Properties Company Article suitable for chemical mechanical planarization processes
US6612917B2 (en) * 2001-02-07 2003-09-02 3M Innovative Properties Company Abrasive article suitable for modifying a semiconductor wafer
US6632129B2 (en) * 2001-02-15 2003-10-14 3M Innovative Properties Company Fixed abrasive article for use in modifying a semiconductor wafer
US6627550B2 (en) * 2001-03-27 2003-09-30 Micron Technology, Inc. Post-planarization clean-up
US6629879B1 (en) * 2001-05-08 2003-10-07 Advanced Micro Devices, Inc. Method of controlling barrier metal polishing processes based upon X-ray fluorescence measurements
US6811470B2 (en) 2001-07-16 2004-11-02 Applied Materials Inc. Methods and compositions for chemical mechanical polishing shallow trench isolation substrates
US7199056B2 (en) * 2002-02-08 2007-04-03 Applied Materials, Inc. Low cost and low dishing slurry for polysilicon CMP
US6943114B2 (en) * 2002-02-28 2005-09-13 Infineon Technologies Ag Integration scheme for metal gap fill, with fixed abrasive CMP
US7063597B2 (en) 2002-10-25 2006-06-20 Applied Materials Polishing processes for shallow trench isolation substrates
US6908366B2 (en) * 2003-01-10 2005-06-21 3M Innovative Properties Company Method of using a soft subpad for chemical mechanical polishing
CN100551623C (zh) * 2003-01-10 2009-10-21 3M创新有限公司 应用于化学机械平面化的垫结构
US6951504B2 (en) * 2003-03-20 2005-10-04 3M Innovative Properties Company Abrasive article with agglomerates and method of use
WO2005000529A1 (en) * 2003-06-03 2005-01-06 Neopad Technologies Corporation Synthesis of a functionally graded pad for chemical mechanical planarization
KR100661445B1 (ko) * 2004-02-05 2006-12-27 제이에스알 가부시끼가이샤 화학 기계 연마 패드, 그의 제조 방법 및 화학 기계 연마방법
US7086939B2 (en) * 2004-03-19 2006-08-08 Saint-Gobain Performance Plastics Corporation Chemical mechanical polishing retaining ring with integral polymer backing
US7485028B2 (en) 2004-03-19 2009-02-03 Saint-Gobain Performance Plastics Corporation Chemical mechanical polishing retaining ring, apparatuses and methods incorporating same
US20050252547A1 (en) * 2004-05-11 2005-11-17 Applied Materials, Inc. Methods and apparatus for liquid chemical delivery
US7150771B2 (en) * 2004-06-18 2006-12-19 3M Innovative Properties Company Coated abrasive article with composite tie layer, and method of making and using the same
US7150770B2 (en) * 2004-06-18 2006-12-19 3M Innovative Properties Company Coated abrasive article with tie layer, and method of making and using the same
US20050282029A1 (en) * 2004-06-18 2005-12-22 3M Innovative Properties Company Polymerizable composition and articles therefrom
US20060088976A1 (en) * 2004-10-22 2006-04-27 Applied Materials, Inc. Methods and compositions for chemical mechanical polishing substrates
US7344575B2 (en) * 2005-06-27 2008-03-18 3M Innovative Properties Company Composition, treated backing, and abrasive articles containing the same
US7344574B2 (en) * 2005-06-27 2008-03-18 3M Innovative Properties Company Coated abrasive article, and method of making and using the same
TWI292185B (en) * 2005-07-11 2008-01-01 Fujitsu Ltd Manufacture of semiconductor device with cmp
US8016644B2 (en) * 2007-07-13 2011-09-13 UNIVERSITé LAVAL Method and apparatus for micro-machining a surface
US20090215266A1 (en) * 2008-02-22 2009-08-27 Thomas Terence M Polishing Copper-Containing patterned wafers
DE102009025242B4 (de) * 2009-06-17 2013-05-23 Siltronic Ag Verfahren zum beidseitigen chemischen Schleifen einer Halbleiterscheibe
DE102009033206A1 (de) * 2009-07-15 2011-01-27 Brand, Guido Polierverfahren und Poliervorrichtung zur Korrektur von geometrischen Abweichungsfehlern auf Präzisionsoberflächen
WO2012098104A1 (de) * 2011-01-22 2012-07-26 Rud. Starcke Gmbh & Co. Kg Schleifkörper
JP5934053B2 (ja) * 2012-08-14 2016-06-15 セイコープレシジョン株式会社 Ｘ線処理装置
EP3126093B1 (de) 2014-04-03 2022-08-17 3M Innovative Properties Company Polierkissen und systeme und verfahren zur herstellung und verwendung davon
TWI769988B (zh) 2015-10-07 2022-07-11 美商3M新設資產公司 拋光墊與系統及其製造與使用方法
CN111087973B (zh) * 2019-12-17 2021-07-27 吉林大学 一种植物纤维发酵改性增强摩擦材料制备装置及制备方法
US20230347470A1 (en) * 2022-04-28 2023-11-02 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Pad for chemical mechanical polishing

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DE3677735D1 (de) 1985-12-17 1991-04-04 Max Planck Gesellschaft Verfahren zur herstellung von halbleitersubstraten.
JPS62259769A (ja) * 1986-05-02 1987-11-12 Nec Corp シリコンウエハの加工方法
US5399528A (en) 1989-06-01 1995-03-21 Leibovitz; Jacques Multi-layer fabrication in integrated circuit systems
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JPH0811050A (ja) 1994-06-28 1996-01-16 Sony Corp 研磨布及びこれを用いた半導体装置の製造方法
WO1996010471A1 (en) * 1994-09-30 1996-04-11 Minnesota Mining And Manufacturing Company Coated abrasive article, method for preparing the same, and method of using
US5643044A (en) 1994-11-01 1997-07-01 Lund; Douglas E. Automatic chemical and mechanical polishing system for semiconductor wafers
US5791969A (en) 1994-11-01 1998-08-11 Lund; Douglas E. System and method of automatically polishing semiconductor wafers
US5609517A (en) 1995-11-20 1997-03-11 International Business Machines Corporation Composite polishing pad
JPH09148285A (ja) 1995-11-27 1997-06-06 Sony Corp 化学的機械研磨粒子及び半導体装置の製造方法
JP3440665B2 (ja) 1995-12-20 2003-08-25 ソニー株式会社 研磨布およびその製造方法
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US5759917A (en) 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
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US6121143A (en) * 1997-09-19 2000-09-19 3M Innovative Properties Company Abrasive articles comprising a fluorochemical agent for wafer surface modification
US6056794A (en) * 1999-03-05 2000-05-02 3M Innovative Properties Company Abrasive articles having bonding systems containing abrasive particles

Also Published As

Publication number Publication date
US6234875B1 (en) 2001-05-22
DE69919230D1 (de) 2004-09-09
HK1044504B (en) 2005-06-30
WO2000074896A1 (en) 2000-12-14
KR100638289B1 (ko) 2006-10-26
CN1352589A (zh) 2002-06-05
JP2003501820A (ja) 2003-01-14
AU1317500A (en) 2000-12-28
TWI231245B (en) 2005-04-21
EP1189729A1 (de) 2002-03-27
EP1189729B1 (de) 2004-08-04
DE69919230T2 (de) 2005-08-04
WO2000074896A8 (en) 2001-03-29
ES2224717T3 (es) 2005-03-01
KR20020011435A (ko) 2002-02-08
BR9917355A (pt) 2002-02-26
HK1044504A1 (en) 2002-10-25
CA2374004A1 (en) 2000-12-14

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