ATE532203T1 - Lokalisierte plasmabehandlung - Google Patents

Lokalisierte plasmabehandlung

Info

Publication number
ATE532203T1
ATE532203T1 AT05076917T AT05076917T ATE532203T1 AT E532203 T1 ATE532203 T1 AT E532203T1 AT 05076917 T AT05076917 T AT 05076917T AT 05076917 T AT05076917 T AT 05076917T AT E532203 T1 ATE532203 T1 AT E532203T1
Authority
AT
Austria
Prior art keywords
plasma
reactive gas
ions
work piece
etching
Prior art date
Application number
AT05076917T
Other languages
English (en)
Inventor
Clive D Chandler
Noel Smith
Original Assignee
Fei Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fei Co filed Critical Fei Co
Application granted granted Critical
Publication of ATE532203T1 publication Critical patent/ATE532203T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366—Localised processing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00523—Etching material
    • B81C1/00531—Dry etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
AT05076917T 2004-08-27 2005-08-22 Lokalisierte plasmabehandlung ATE532203T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US60495104P 2004-08-27 2004-08-27

Publications (1)

Publication Number Publication Date
ATE532203T1 true ATE532203T1 (de) 2011-11-15

Family

ID=35414575

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05076917T ATE532203T1 (de) 2004-08-27 2005-08-22 Lokalisierte plasmabehandlung

Country Status (4)

Country Link
US (2) US8087379B2 (de)
EP (1) EP1630849B1 (de)
JP (1) JP5523651B2 (de)
AT (1) ATE532203T1 (de)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100553713B1 (ko) * 2004-06-03 2006-02-24 삼성전자주식회사 플라즈마 식각 장치 및 이 장치를 이용한 포토 마스크의제조 방법
EP1630849B1 (de) * 2004-08-27 2011-11-02 Fei Company Lokalisierte Plasmabehandlung
US8835880B2 (en) * 2006-10-31 2014-09-16 Fei Company Charged particle-beam processing using a cluster source
JP2008234874A (ja) 2007-03-16 2008-10-02 Sii Nanotechnology Inc 集束イオンビーム装置
US8288737B1 (en) 2007-04-23 2012-10-16 South Bay Technology, Inc. Ion sputter removal from thin microscopy samples with ions extracted from an RF generated plasma
US8303833B2 (en) * 2007-06-21 2012-11-06 Fei Company High resolution plasma etch
DE102007043291A1 (de) * 2007-09-11 2009-04-02 Maschinenfabrik Reinhausen Gmbh Verfahren und Vorrichtung zur Behandlung oder Beschichtung von Oberflächen
WO2009089499A2 (en) * 2008-01-09 2009-07-16 Fei Company Multibeam system
JP5288810B2 (ja) * 2008-01-16 2013-09-11 株式会社ジャパンディスプレイ 局所プラズマ処理装置及び処理方法
US10493559B2 (en) 2008-07-09 2019-12-03 Fei Company Method and apparatus for laser machining
US8778804B2 (en) * 2009-01-30 2014-07-15 Fei Company High selectivity, low damage electron-beam delineation etch
US8617668B2 (en) * 2009-09-23 2013-12-31 Fei Company Method of using nitrogen based compounds to reduce contamination in beam-induced thin film deposition
US9111729B2 (en) * 2009-12-03 2015-08-18 Lam Research Corporation Small plasma chamber systems and methods
US8987678B2 (en) 2009-12-30 2015-03-24 Fei Company Encapsulation of electrodes in solid media
EP2341525B1 (de) 2009-12-30 2013-10-23 FEI Company Plasmaquelle für ein Teilchenstrahlsystem
US8642974B2 (en) 2009-12-30 2014-02-04 Fei Company Encapsulation of electrodes in solid media for use in conjunction with fluid high voltage isolation
US8721907B2 (en) * 2010-10-31 2014-05-13 Camtek Ltd. Method and system for milling and imaging an object
JP5271456B2 (ja) * 2010-11-10 2013-08-21 パナソニック株式会社 プラズマ処理装置及びプラズマ処理方法
US8859998B2 (en) 2011-01-28 2014-10-14 Fei Company TEM sample preparation
US8853078B2 (en) 2011-01-30 2014-10-07 Fei Company Method of depositing material
US9090973B2 (en) 2011-01-31 2015-07-28 Fei Company Beam-induced deposition of low-resistivity material
EP2492950B1 (de) 2011-02-25 2018-04-11 FEI Company Verfahren zum schnellen Schalten zwischen einem Hochstrommodus und einem Niederstrommodus in einem System mit geladenem Teilchenstrahl
US8354655B2 (en) * 2011-05-03 2013-01-15 Varian Semiconductor Equipment Associates, Inc. Method and system for controlling critical dimension and roughness in resist features
US20130098871A1 (en) 2011-10-19 2013-04-25 Fei Company Internal Split Faraday Shield for an Inductively Coupled Plasma Source
JP5877509B2 (ja) * 2011-11-21 2016-03-08 国立大学法人静岡大学 荷電粒子ビーム生成装置及び荷電粒子ビーム生成方法
US9105438B2 (en) * 2012-05-31 2015-08-11 Fei Company Imaging and processing for plasma ion source
US8728951B2 (en) 2012-07-31 2014-05-20 Varian Semiconductor Equipment Associates, Inc. Method and system for ion-assisted processing
US20140073138A1 (en) * 2012-09-12 2014-03-13 Ming-Yu Huang Method for plasma etching and plasma etching apparatus thereof
DE102012220353B4 (de) * 2012-11-08 2015-11-26 Sauer Ultrasonic Gmbh Werkzeug, Werkzeugmaschine und Bearbeitungsverfahren
KR101479746B1 (ko) 2013-07-29 2015-01-07 경희대학교 산학협력단 국소 플라즈마 에칭 장치 및 에칭 방법
GB201413496D0 (en) * 2014-07-30 2014-09-10 Innovation Ulster Ltd A secondary/downstream or ion free plasma based surface augmentation method
KR20180061135A (ko) * 2015-06-19 2018-06-07 어플라이드 머티어리얼스, 인코포레이티드 레이저 및 가스 유동을 이용한 적층 제조에서의 표면 처리
US10103008B2 (en) 2016-01-12 2018-10-16 Fei Company Charged particle beam-induced etching
EP3249676B1 (de) 2016-05-27 2018-10-03 FEI Company Ladungsträgerteilchenmikroskop mit zwei geladenen teilchenstrahlen und in situ-abscheidungsfunktionalität
US10141161B2 (en) * 2016-09-12 2018-11-27 Varian Semiconductor Equipment Associates, Inc. Angle control for radicals and reactive neutral ion beams
US10502958B2 (en) * 2017-10-30 2019-12-10 Facebook Technologies, Llc H2-assisted slanted etching of high refractive index material
US10684407B2 (en) 2017-10-30 2020-06-16 Facebook Technologies, Llc Reactivity enhancement in ion beam etcher
US10914954B2 (en) 2018-08-03 2021-02-09 Facebook Technologies, Llc Rainbow reduction for waveguide displays
US10761330B2 (en) 2018-01-23 2020-09-01 Facebook Technologies, Llc Rainbow reduction in waveguide displays
US10845596B2 (en) 2018-01-23 2020-11-24 Facebook Technologies, Llc Slanted surface relief grating for rainbow reduction in waveguide display
US10649119B2 (en) 2018-07-16 2020-05-12 Facebook Technologies, Llc Duty cycle, depth, and surface energy control in nano fabrication
US11137536B2 (en) 2018-07-26 2021-10-05 Facebook Technologies, Llc Bragg-like gratings on high refractive index material
JP7125749B2 (ja) * 2018-10-29 2022-08-25 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置
US11150394B2 (en) 2019-01-31 2021-10-19 Facebook Technologies, Llc Duty cycle range increase for waveguide combiners
US11550083B2 (en) 2019-06-26 2023-01-10 Meta Platforms Technologies, Llc Techniques for manufacturing slanted structures
CN110491754B (zh) * 2019-08-15 2020-08-07 中国科学院长春光学精密机械与物理研究所 一种基于电感耦合等离子体与离子束耦合的光学加工装置
US11226446B2 (en) 2020-05-06 2022-01-18 Facebook Technologies, Llc Hydrogen/nitrogen doping and chemically assisted etching of high refractive index gratings
JP2024001445A (ja) * 2022-06-22 2024-01-10 株式会社日立ハイテク 荷電粒子線装置、及び撮像方法
KR20260003760A (ko) * 2023-04-27 2026-01-07 칼 짜이스 에스엠티 게엠베하 원격 플라즈마 전자 유도 마스크 수리

Family Cites Families (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3294583A (en) * 1962-06-14 1966-12-27 Sprague Electric Co Process of coating a silicon semiconductor with indium using an ion beam
US4304979A (en) * 1978-10-24 1981-12-08 Leybold-Heraeus Gmbh Method and apparatus for electron beam welding at elevated pressures
JPH0622212B2 (ja) * 1983-05-31 1994-03-23 株式会社東芝 ドライエッチング方法
JPS61136229A (ja) * 1984-12-06 1986-06-24 Toshiba Corp ドライエツチング装置
US4626648A (en) 1985-07-03 1986-12-02 Browning James A Hybrid non-transferred-arc plasma torch system and method of operating same
JPH0763064B2 (ja) * 1986-03-31 1995-07-05 株式会社日立製作所 Ｉｃ素子における配線接続方法
US4859908A (en) * 1986-09-24 1989-08-22 Matsushita Electric Industrial Co., Ltd. Plasma processing apparatus for large area ion irradiation
EP0273351B1 (de) * 1986-12-26 1993-05-05 Seiko Instruments Inc. Gerät zur Ausbesserung eines gemusterten Films
US4874460A (en) * 1987-11-16 1989-10-17 Seiko Instruments Inc. Method and apparatus for modifying patterned film
JPH01132033A (ja) * 1987-11-17 1989-05-24 Hitachi Ltd イオン源及び薄膜形成装置
US5036252A (en) * 1988-04-26 1991-07-30 Hauzer Holding Bv Radio frequency ion beam source
JPH0262039A (ja) * 1988-08-29 1990-03-01 Hitachi Ltd 多層素子の微細加工方法およびその装置
US5087434A (en) * 1989-04-21 1992-02-11 The Pennsylvania Research Corporation Synthesis of diamond powders in the gas phase
DE4018954A1 (de) * 1989-06-15 1991-01-03 Mitsubishi Electric Corp Trockenaetzgeraet
KR910016054A (ko) * 1990-02-23 1991-09-30 미다 가쓰시게 마이크로 전자 장치용 표면 처리 장치 및 그 방법
US5104684A (en) * 1990-05-25 1992-04-14 Massachusetts Institute Of Technology Ion beam induced deposition of metals
US5683547A (en) * 1990-11-21 1997-11-04 Hitachi, Ltd. Processing method and apparatus using focused energy beam
US5188705A (en) 1991-04-15 1993-02-23 Fei Company Method of semiconductor device manufacture
KR960012334B1 (ko) * 1992-03-31 1996-09-18 가부시끼가이샤 히다찌세이사꾸쇼 하전빔과 반응성가스를 사용해서 시료를 처리하는 방법 및 장치
US5462629A (en) * 1992-08-28 1995-10-31 Kawasaki Steel Corp. Surface processing apparatus using neutral beam
JPH06176725A (ja) 1992-12-04 1994-06-24 Nissin Electric Co Ltd イオン源
JPH0821475B2 (ja) 1992-12-18 1996-03-04 科学技術庁無機材質研究所長 高周波プラズマ装置
US5504340A (en) * 1993-03-10 1996-04-02 Hitachi, Ltd. Process method and apparatus using focused ion beam generating means
US5350480A (en) * 1993-07-23 1994-09-27 Aspect International, Inc. Surface cleaning and conditioning using hot neutral gas beam array
JPH07206414A (ja) 1994-01-18 1995-08-08 Semiconductor Energy Lab Co Ltd プラズマを用いたｃ６０合成方法
JPH07312201A (ja) 1994-05-17 1995-11-28 Nissin Electric Co Ltd イオンド−ピング装置におけるイオンビ−ム運転方法
JPH07335163A (ja) 1994-06-13 1995-12-22 Nissin Electric Co Ltd イオンビーム発生方法およびその装置
WO1996000803A1 (en) 1994-06-28 1996-01-11 Fei Company Charged particle deposition of electrically insulating films
US5597495A (en) * 1994-11-07 1997-01-28 Keil; Mark Method and apparatus for etching surfaces with atomic fluorine
JP3523405B2 (ja) * 1996-01-26 2004-04-26 株式会社日立製作所 荷電ビーム処理によるパターン形成方法及び荷電ビーム処理装置
JP3328498B2 (ja) * 1996-02-16 2002-09-24 株式会社荏原製作所 高速原子線源
GB9704077D0 (en) * 1996-03-15 1997-04-16 British Nuclear Fuels Plc Improvements in and relating to processing
US6140773A (en) * 1996-09-10 2000-10-31 The Regents Of The University Of California Automated control of linear constricted plasma source array
US5969470A (en) * 1996-11-08 1999-10-19 Veeco Instruments, Inc. Charged particle source
US6312554B1 (en) * 1996-12-05 2001-11-06 Applied Materials, Inc. Apparatus and method for controlling the ratio of reactive to non-reactive ions in a semiconductor wafer processing chamber
JP3928018B2 (ja) 1997-03-17 2007-06-13 株式会社ダイヘン フロンのプラズマアーク分解方法及び装置
JPH11154479A (ja) * 1997-11-20 1999-06-08 Hitachi Ltd ２次電子画像検出方法及びその装置並びに集束荷電粒子ビームによる処理方法及びその装置
US6039000A (en) * 1998-02-11 2000-03-21 Micrion Corporation Focused particle beam systems and methods using a tilt column
JP2976965B2 (ja) * 1998-04-02 1999-11-10 日新電機株式会社 成膜方法及び成膜装置
JP4185604B2 (ja) * 1998-11-18 2008-11-26 株式会社日立製作所 試料解析方法、試料作成方法およびそのための装置
US6232787B1 (en) * 1999-01-08 2001-05-15 Schlumberger Technologies, Inc. Microstructure defect detection
TW455912B (en) * 1999-01-22 2001-09-21 Sony Corp Method and apparatus for film deposition
US7094312B2 (en) * 1999-07-22 2006-08-22 Fsi Company Focused particle beam systems and methods using a tilt column
SE521904C2 (sv) * 1999-11-26 2003-12-16 Ladislav Bardos Anordning för hybridplasmabehandling
US7838850B2 (en) * 1999-12-13 2010-11-23 Semequip, Inc. External cathode ion source
JP2003068719A (ja) 2001-08-28 2003-03-07 Chemitoronics Co Ltd プラズマエッチング装置
JP4039834B2 (ja) * 2001-09-28 2008-01-30 株式会社荏原製作所 エッチング方法及びエッチング装置
JP4073204B2 (ja) * 2001-11-19 2008-04-09 株式会社荏原製作所 エッチング方法
JP2003213404A (ja) 2002-01-15 2003-07-30 Shimadzu Corp カソードアークイオン成膜装置
US7931787B2 (en) * 2002-02-26 2011-04-26 Donald Bennett Hilliard Electron-assisted deposition process and apparatus
JP2003311146A (ja) 2002-04-23 2003-11-05 Jeol Ltd 高周波誘導熱プラズマ装置
US6843927B2 (en) * 2002-08-27 2005-01-18 Kla-Tencor Technologies Corporation Method and apparatus for endpoint detection in electron beam assisted etching
EP1540693A4 (de) * 2002-09-18 2010-06-09 Fei Co System für geladene teilchenstrahlen
US20040129385A1 (en) * 2003-01-02 2004-07-08 International Business Machines Corporation Pre-loaded plasma reactor apparatus and application thereof
US7132301B1 (en) * 2003-06-19 2006-11-07 Kla-Tencor Technologies Corporation Method and apparatus for reviewing voltage contrast defects in semiconductor wafers
JP4052191B2 (ja) * 2003-06-24 2008-02-27 株式会社島津製作所 複合成膜装置およびこれを用いた磁気ヘッドの保護膜形成方法
DE602004021750D1 (de) 2003-07-14 2009-08-13 Fei Co Zweistrahlsystem
US6939389B2 (en) * 2003-08-08 2005-09-06 Frank Mooney Method and apparatus for manufacturing fine powders
GB0323001D0 (en) * 2003-10-01 2003-11-05 Oxford Instr Plasma Technology Apparatus and method for plasma treating a substrate
EP1695038B1 (de) * 2003-12-12 2013-02-13 Semequip, Inc. Steuerung des flusses von aus feststoffen sublimierten dämpfen
US7241361B2 (en) 2004-02-20 2007-07-10 Fei Company Magnetically enhanced, inductively coupled plasma source for a focused ion beam system
EP1630849B1 (de) * 2004-08-27 2011-11-02 Fei Company Lokalisierte Plasmabehandlung
US20060236931A1 (en) * 2005-04-25 2006-10-26 Varian Semiconductor Equipment Associates, Inc. Tilted Plasma Doping
EP2041756B1 (de) * 2006-07-14 2015-05-13 FEI Company Plasmafokussiertes ionenstrahlsystem mit mehreren quellen
JP2008234874A (ja) * 2007-03-16 2008-10-02 Sii Nanotechnology Inc 集束イオンビーム装置
US9520275B2 (en) * 2008-03-21 2016-12-13 Tokyo Electron Limited Mono-energetic neutral beam activated chemical processing system and method of using
US7732759B2 (en) * 2008-05-23 2010-06-08 Tokyo Electron Limited Multi-plasma neutral beam source and method of operating
US20100081285A1 (en) * 2008-09-30 2010-04-01 Tokyo Electron Limited Apparatus and Method for Improving Photoresist Properties
US20110240602A1 (en) * 2010-03-30 2011-10-06 Tel Epion Inc. High-voltage gas cluster ion beam (gcib) processing system

Also Published As

Publication number Publication date
US20060045987A1 (en) 2006-03-02
US8087379B2 (en) 2012-01-03
US20110117748A1 (en) 2011-05-19
US8530006B2 (en) 2013-09-10
EP1630849A2 (de) 2006-03-01
JP2006066398A (ja) 2006-03-09
EP1630849A3 (de) 2009-06-03
EP1630849B1 (de) 2011-11-02
JP5523651B2 (ja) 2014-06-18

Similar Documents

Publication Publication Date Title
ATE532203T1 (de) Lokalisierte plasmabehandlung
TW200608489A (en) Plasma treatment method and plasma etching method
TW200629336A (en) Semiconductor plasma-processing apparatus and method
ATE281000T1 (de) Verfahren und gerät zur stabilisierung eines plasmas
WO2008094297A3 (en) A multi-source plasma focused ion beam system
WO2007022976A3 (de) Verfahren und vorrichtung zur innenseitigen plasmabehandlung von hohlkörpern
WO2007133413A3 (en) Photoresist stripping chamber and methods of etching photoresist on substrates
JP2009004778A5 (de)
JP6688010B2 (ja) 強化した時計部品を製造する方法、時計部品および時計
TW200741033A (en) Ceramic coating member for semiconductor processing apparatus
TW200502718A (en) Methods of removing photoresist from substrates
CA2603564A1 (en) Blasting method
WO2007115309A3 (en) Apparatus and method for treating a workpiece with ionizing gas plasma
RU2012137201A (ru) Плазменная обработка при изготовлении буровых снарядов наклонно-направленного бурения
TW200715412A (en) Method and apparatus for forming metal film
WO2006061004A3 (de) Verfahren zum oberflächenstrahlen von hohlräumen, insbesondere von hohlräumen an gasturbinen
PL1680800T3 (pl) Sposób i urządzenie do obróbki powierzchni wiązką jonową
WO2007076280A3 (en) Side-specific treatment of textiles using plasmas
TW200746305A (en) Film forming method, film forming device, and storage medium
GB2406713A (en) Surface treating method for substrate
EP2045366A4 (de) Verfahren zur vakuumkompressionsmikroplasmaoxidation und vorrichtung zur durchführung des verfahrens
WO2004036611A3 (en) Neutral particle beam processing apparatus with enhanced conversion performance from plasma ions to neutral particles
TW200608487A (en) Pretreatment process of substrate in micro-nano imprinting technology
Gerhard et al. Plasma-enhanced laser materials processing
RU2409455C2 (ru) Способ обработки токопроводящих материалов