ATE534139T1 - Verschiebungsmanipulation mithilfe eines gescannten lasers - Google Patents

Verschiebungsmanipulation mithilfe eines gescannten lasers

Info

Publication number
ATE534139T1
ATE534139T1 AT09781028T AT09781028T ATE534139T1 AT E534139 T1 ATE534139 T1 AT E534139T1 AT 09781028 T AT09781028 T AT 09781028T AT 09781028 T AT09781028 T AT 09781028T AT E534139 T1 ATE534139 T1 AT E534139T1
Authority
AT
Austria
Prior art keywords
scanned laser
laser
dislocations
displacement manipulation
moveable
Prior art date
Application number
AT09781028T
Other languages
English (en)
Inventor
Klaus Schwarz
Anita Madan
Xiao Liu
Chung Woh Lai
John Scott
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of ATE534139T1 publication Critical patent/ATE534139T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H10P34/422—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing using incoherent radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies
    • H10P36/07—Gettering within semiconductor bodies within silicon bodies of silicon-on-insulator structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/40—Treatments of semiconductor bodies to modify their internal properties, e.g. to produce internal imperfections
    • H10P95/402—Treatments of semiconductor bodies to modify their internal properties, e.g. to produce internal imperfections of silicon bodies

Landscapes

  • Recrystallisation Techniques (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
AT09781028T 2008-10-01 2009-07-24 Verschiebungsmanipulation mithilfe eines gescannten lasers ATE534139T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/242,990 US8138066B2 (en) 2008-10-01 2008-10-01 Dislocation engineering using a scanned laser
PCT/EP2009/059552 WO2010037577A1 (en) 2008-10-01 2009-07-24 Dislocation engineering using a scanned laser

Publications (1)

Publication Number Publication Date
ATE534139T1 true ATE534139T1 (de) 2011-12-15

Family

ID=41134607

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09781028T ATE534139T1 (de) 2008-10-01 2009-07-24 Verschiebungsmanipulation mithilfe eines gescannten lasers

Country Status (7)

Country Link
US (5) US8138066B2 (de)
EP (1) EP2332168B1 (de)
JP (1) JP5005115B2 (de)
KR (1) KR101475992B1 (de)
AT (1) ATE534139T1 (de)
TW (1) TWI463755B (de)
WO (1) WO2010037577A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8138066B2 (en) 2008-10-01 2012-03-20 International Business Machines Corporation Dislocation engineering using a scanned laser
FR2974941B1 (fr) * 2011-05-06 2013-06-14 Commissariat Energie Atomique Procede de realisation de nanocristaux de
FR2974940B1 (fr) * 2011-05-06 2015-11-13 Commissariat Energie Atomique Procede de realisation de nanocristaux de semi-conducteur orientes selon une direction pre-definie
CN103913687B (zh) * 2013-01-06 2016-12-28 上海华虹宏力半导体制造有限公司 沟槽mos器件中位错型漏电分析方法
CN114662346B (zh) * 2022-05-24 2022-08-09 山东大学 一种半导体激光器中位错扩展特性的模拟预测方法

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US4257827A (en) * 1979-11-13 1981-03-24 International Business Machines Corporation High efficiency gettering in silicon through localized superheated melt formation
JPS62172715A (ja) * 1986-01-27 1987-07-29 Nippon Telegr & Teleph Corp <Ntt> 半導体エピタキシヤル薄膜の製造方法
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JPH0449629A (ja) * 1990-06-18 1992-02-19 Fujitsu Ltd 化合物半導体結晶およびその製造方法
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JPH04271114A (ja) * 1990-12-27 1992-09-28 Nagoya Kogyo Univ 化合物半導体の欠陥低減法
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CA2062134C (en) * 1991-05-31 1997-03-25 Ibm Low Defect Densiry/Arbitrary Lattice Constant Heteroepitaxial Layers
JPH0512307A (ja) 1991-07-03 1993-01-22 Nec Corp 生産進捗アラーム表示システム
JP3376211B2 (ja) * 1996-05-29 2003-02-10 株式会社東芝 半導体装置、半導体基板の製造方法及び半導体装置の製造方法
US5891769A (en) * 1997-04-07 1999-04-06 Motorola, Inc. Method for forming a semiconductor device having a heteroepitaxial layer
EP1192647B1 (de) * 1999-06-25 2010-10-20 Massachusetts Institute Of Technology Oxidation einer auf einer germaniumschicht aufgebrachten siliziumschicht
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JP4279498B2 (ja) * 2002-02-28 2009-06-17 株式会社 液晶先端技術開発センター 半導体薄膜の形成方法、半導体薄膜の形成装置および結晶化方法
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Also Published As

Publication number Publication date
EP2332168B1 (de) 2011-11-16
TWI463755B (zh) 2014-12-01
KR101475992B1 (ko) 2014-12-30
JP2012504857A (ja) 2012-02-23
US8865571B2 (en) 2014-10-21
KR20110081965A (ko) 2011-07-15
EP2332168A1 (de) 2011-06-15
US20120138823A1 (en) 2012-06-07
US8865572B2 (en) 2014-10-21
JP5005115B2 (ja) 2012-08-22
US20140154872A1 (en) 2014-06-05
WO2010037577A1 (en) 2010-04-08
US8138066B2 (en) 2012-03-20
TW201015807A (en) 2010-04-16
US20120294322A1 (en) 2012-11-22
US20140154873A1 (en) 2014-06-05
US20100081259A1 (en) 2010-04-01

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