ATE534140T1 - Finfet-basierte nichtflüchtige speichervorrichtung - Google Patents

Finfet-basierte nichtflüchtige speichervorrichtung

Info

Publication number
ATE534140T1
ATE534140T1 AT06821149T AT06821149T ATE534140T1 AT E534140 T1 ATE534140 T1 AT E534140T1 AT 06821149 T AT06821149 T AT 06821149T AT 06821149 T AT06821149 T AT 06821149T AT E534140 T1 ATE534140 T1 AT E534140T1
Authority
AT
Austria
Prior art keywords
fin
channel region
memory device
volatile memory
intra
Prior art date
Application number
AT06821149T
Other languages
English (en)
Inventor
Pierre Goarin
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE534140T1 publication Critical patent/ATE534140T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/037—Manufacture or treatment of data-storage electrodes comprising charge-trapping insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
AT06821149T 2005-09-28 2006-09-26 Finfet-basierte nichtflüchtige speichervorrichtung ATE534140T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP05108975 2005-09-28
PCT/IB2006/053489 WO2007036874A1 (en) 2005-09-28 2006-09-26 Finfet-based non-volatile memory device

Publications (1)

Publication Number Publication Date
ATE534140T1 true ATE534140T1 (de) 2011-12-15

Family

ID=37728194

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06821149T ATE534140T1 (de) 2005-09-28 2006-09-26 Finfet-basierte nichtflüchtige speichervorrichtung

Country Status (7)

Country Link
US (1) US8063427B2 (de)
EP (1) EP1932171B1 (de)
JP (1) JP2009510720A (de)
CN (1) CN100590799C (de)
AT (1) ATE534140T1 (de)
TW (1) TW200721510A (de)
WO (1) WO2007036874A1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7868374B2 (en) * 2008-02-21 2011-01-11 International Business Machines Corporation Semitubular metal-oxide-semiconductor field effect transistor
JP5645368B2 (ja) * 2009-04-14 2014-12-24 株式会社日立製作所 半導体装置およびその製造方法
US8461640B2 (en) 2009-09-08 2013-06-11 Silicon Storage Technology, Inc. FIN-FET non-volatile memory cell, and an array and method of manufacturing
CN102420232B (zh) * 2010-09-28 2014-08-13 中国科学院微电子研究所 一种闪存器件及其形成方法
KR101888003B1 (ko) * 2012-04-09 2018-08-13 삼성전자주식회사 보디 바이어스 효과로 문턱전압을 조절할 수 있는 트랜지스터를 갖는 반도체 소자 및 그 제조방법
US8785273B2 (en) 2012-04-11 2014-07-22 International Business Machines Corporation FinFET non-volatile memory and method of fabrication
US8723268B2 (en) * 2012-06-13 2014-05-13 Synopsys, Inc. N-channel and P-channel end-to-end finFET cell architecture with relaxed gate pitch
US9305930B2 (en) * 2013-12-11 2016-04-05 Globalfoundries Inc. Finfet crosspoint flash memory
US9818647B2 (en) 2015-06-03 2017-11-14 International Business Machines Corporation Germanium dual-fin field effect transistor
JP6855848B2 (ja) * 2016-03-18 2021-04-07 株式会社リコー 電界効果型トランジスタの製造方法、揮発性半導体メモリ素子の製造方法、不揮発性半導体メモリ素子の製造方法、表示素子の製造方法、画像表示装置の製造方法、システムの製造方法
US9985042B2 (en) * 2016-05-24 2018-05-29 Silicon Storage Technology, Inc. Method of integrating FinFET CMOS devices with embedded nonvolatile memory cells
US10312247B1 (en) * 2018-03-22 2019-06-04 Silicon Storage Technology, Inc. Two transistor FinFET-based split gate non-volatile floating gate flash memory and method of fabrication
US10797142B2 (en) * 2018-12-03 2020-10-06 Silicon Storage Technology, Inc. FinFET-based split gate non-volatile flash memory with extended source line FinFET, and method of fabrication
US11488970B2 (en) * 2020-07-09 2022-11-01 Silicon Storage Technology, Inc. Method of forming split gate memory cells with thinner tunnel oxide

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5411905A (en) * 1994-04-29 1995-05-02 International Business Machines Corporation Method of making trench EEPROM structure on SOI with dual channels
US6413802B1 (en) * 2000-10-23 2002-07-02 The Regents Of The University Of California Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture
DE10220922B4 (de) 2002-05-10 2006-09-28 Infineon Technologies Ag Flash-Speicherzelle, Anordnung von Flash-Speicherzellen und Verfahren zur Herstellung von Flash-Speicherzellen
US6855283B2 (en) * 2002-07-25 2005-02-15 Patent Holdings Company Method for forming a sheet, fiber and resin composite
US6800885B1 (en) * 2003-03-12 2004-10-05 Advance Micro Devices, Inc. Asymmetrical double gate or all-around gate MOSFET devices and methods for making same
US6903967B2 (en) 2003-05-22 2005-06-07 Freescale Semiconductor, Inc. Memory with charge storage locations and adjacent gate structures
US6963104B2 (en) * 2003-06-12 2005-11-08 Advanced Micro Devices, Inc. Non-volatile memory device
US20050003592A1 (en) * 2003-06-18 2005-01-06 Jones A. Brooke All-around MOSFET gate and methods of manufacture thereof
US7388258B2 (en) * 2003-12-10 2008-06-17 International Business Machines Corporation Sectional field effect devices
KR100621628B1 (ko) * 2004-05-31 2006-09-19 삼성전자주식회사 비휘발성 기억 셀 및 그 형성 방법

Also Published As

Publication number Publication date
US20080203462A1 (en) 2008-08-28
US8063427B2 (en) 2011-11-22
CN100590799C (zh) 2010-02-17
CN101273440A (zh) 2008-09-24
TW200721510A (en) 2007-06-01
EP1932171A1 (de) 2008-06-18
JP2009510720A (ja) 2009-03-12
WO2007036874A1 (en) 2007-04-05
EP1932171B1 (de) 2011-11-16

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