ATE535021T1 - Elektromechanische nanoröhren-tunneleinrichtung mit source, drain und gate - Google Patents

Elektromechanische nanoröhren-tunneleinrichtung mit source, drain und gate

Info

Publication number
ATE535021T1
ATE535021T1 AT05742101T AT05742101T ATE535021T1 AT E535021 T1 ATE535021 T1 AT E535021T1 AT 05742101 T AT05742101 T AT 05742101T AT 05742101 T AT05742101 T AT 05742101T AT E535021 T1 ATE535021 T1 AT E535021T1
Authority
AT
Austria
Prior art keywords
nanotube
force
source
drain
electromechanical
Prior art date
Application number
AT05742101T
Other languages
English (en)
Inventor
Susanne Viefers
Tomas Nord
Jari Kinaret
Magnus Jonsson
Sven Axelsson
Original Assignee
Chalmers Intellectual Property Rights Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chalmers Intellectual Property Rights Ab filed Critical Chalmers Intellectual Property Rights Ab
Application granted granted Critical
Publication of ATE535021T1 publication Critical patent/ATE535021T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0094—Switches making use of nanoelectromechanical systems [NEMS]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/462—Microelectro-mechanical filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C23/00—Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
    • H01H2059/0036—Movable armature with higher resonant frequency for faster switching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Acoustics & Sound (AREA)
  • Mathematical Physics (AREA)
  • Thin Film Transistor (AREA)
  • Micromachines (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
AT05742101T 2004-05-14 2005-05-16 Elektromechanische nanoröhren-tunneleinrichtung mit source, drain und gate ATE535021T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US57088204P 2004-05-14 2004-05-14
PCT/SE2005/000691 WO2005112126A1 (en) 2004-05-14 2005-05-16 Electromechanical nanotube tunneling device comprising source, drain and gate

Publications (1)

Publication Number Publication Date
ATE535021T1 true ATE535021T1 (de) 2011-12-15

Family

ID=35394430

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05742101T ATE535021T1 (de) 2004-05-14 2005-05-16 Elektromechanische nanoröhren-tunneleinrichtung mit source, drain und gate

Country Status (5)

Country Link
US (1) US20060086994A1 (de)
EP (1) EP1745516B1 (de)
JP (1) JP4995717B2 (de)
AT (1) ATE535021T1 (de)
WO (1) WO2005112126A1 (de)

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Also Published As

Publication number Publication date
US20060086994A1 (en) 2006-04-27
EP1745516B1 (de) 2011-11-23
EP1745516A1 (de) 2007-01-24
WO2005112126A1 (en) 2005-11-24
JP2008502125A (ja) 2008-01-24
JP4995717B2 (ja) 2012-08-08

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