ATE535023T1 - Verfahren zur herstellung von polysiliziumfilmen - Google Patents

Verfahren zur herstellung von polysiliziumfilmen

Info

Publication number
ATE535023T1
ATE535023T1 AT05739553T AT05739553T ATE535023T1 AT E535023 T1 ATE535023 T1 AT E535023T1 AT 05739553 T AT05739553 T AT 05739553T AT 05739553 T AT05739553 T AT 05739553T AT E535023 T1 ATE535023 T1 AT E535023T1
Authority
AT
Austria
Prior art keywords
polycrystalline silicon
support
relief
polysilicon film
face
Prior art date
Application number
AT05739553T
Other languages
English (en)
Inventor
Claude Remy
Christian Belouet
Original Assignee
Solarforce
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solarforce filed Critical Solarforce
Application granted granted Critical
Publication of ATE535023T1 publication Critical patent/ATE535023T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)
AT05739553T 2004-04-05 2005-03-18 Verfahren zur herstellung von polysiliziumfilmen ATE535023T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0450680A FR2868598B1 (fr) 2004-04-05 2004-04-05 Procede de fabrication de plaques de silicium polycristallin
PCT/FR2005/050175 WO2005101527A1 (fr) 2004-04-05 2005-03-18 Procede de fabrication de plaques de silicium polycristallin

Publications (1)

Publication Number Publication Date
ATE535023T1 true ATE535023T1 (de) 2011-12-15

Family

ID=34945043

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05739553T ATE535023T1 (de) 2004-04-05 2005-03-18 Verfahren zur herstellung von polysiliziumfilmen

Country Status (9)

Country Link
US (1) US8506704B2 (de)
EP (1) EP1735843B1 (de)
JP (1) JP2007531994A (de)
CN (1) CN1965415B (de)
AT (1) ATE535023T1 (de)
AU (1) AU2005234193B2 (de)
ES (1) ES2377938T3 (de)
FR (1) FR2868598B1 (de)
WO (1) WO2005101527A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2935838B1 (fr) * 2008-09-05 2012-11-23 Commissariat Energie Atomique Procede de preparation d'une couche mince auto-supportee de silicium cristallise
CN102560630A (zh) * 2012-01-12 2012-07-11 徐州协鑫光电科技有限公司 导模法同步生长多条晶体的热场及方法
FR3040536A1 (fr) * 2015-08-24 2017-03-03 St Microelectronics Sa Capteur d'image a diaphotie spectrale et optique reduite
CN108305913A (zh) * 2018-01-25 2018-07-20 山东大学 硅晶太阳电池微细加工制绒装置及方法
CN113815304B (zh) * 2020-06-19 2023-08-29 陈竹 基于丝网印刷技术的同步对花板材、板材同步对花系统及方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2386359A1 (fr) * 1977-04-07 1978-11-03 Labo Electronique Physique Procede de depot par immersion en continu, dispositif et produits obtenus
FR2516708A1 (fr) * 1981-11-13 1983-05-20 Comp Generale Electricite Procede de fabrication de silicium polycristallin pour photopiles solaires
US5639300A (en) * 1987-12-07 1997-06-17 Massachusetts Institute Of Technology Epitaxy with reusable template
US5248621A (en) * 1990-10-23 1993-09-28 Canon Kabushiki Kaisha Method for producing solar cell devices of crystalline material
JPH05235391A (ja) * 1991-03-07 1993-09-10 Mitsubishi Electric Corp 薄膜太陽電池及びその製造方法並びに半導体装置の製造方法
US5306646A (en) * 1992-12-23 1994-04-26 Martin Marietta Energy Systems, Inc. Method for producing textured substrates for thin-film photovoltaic cells
JP3754815B2 (ja) * 1997-02-19 2006-03-15 キヤノン株式会社 光起電力素子、光電変換素子、光起電力素子の製造方法及び光電変換素子の製造方法
JP4111669B2 (ja) * 1999-11-30 2008-07-02 シャープ株式会社 シート製造方法、シートおよび太陽電池

Also Published As

Publication number Publication date
FR2868598B1 (fr) 2006-06-09
EP1735843A1 (de) 2006-12-27
WO2005101527A1 (fr) 2005-10-27
CN1965415A (zh) 2007-05-16
EP1735843B1 (de) 2011-11-23
CN1965415B (zh) 2011-07-20
AU2005234193A1 (en) 2005-10-27
AU2005234193B2 (en) 2011-04-21
US8506704B2 (en) 2013-08-13
JP2007531994A (ja) 2007-11-08
US20070193503A1 (en) 2007-08-23
FR2868598A1 (fr) 2005-10-07
ES2377938T3 (es) 2012-04-03

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