ATE524837T1 - Verfahren zur herstellung eines lichtemittierenden bauelements - Google Patents

Verfahren zur herstellung eines lichtemittierenden bauelements

Info

Publication number
ATE524837T1
ATE524837T1 AT04799734T AT04799734T ATE524837T1 AT E524837 T1 ATE524837 T1 AT E524837T1 AT 04799734 T AT04799734 T AT 04799734T AT 04799734 T AT04799734 T AT 04799734T AT E524837 T1 ATE524837 T1 AT E524837T1
Authority
AT
Austria
Prior art keywords
light
layer
transfer layer
minute unevenness
producing
Prior art date
Application number
AT04799734T
Other languages
English (en)
Inventor
Hiroshi Fukshima
Masao Kubo
Akira Inoue
Kenichiro Tanaka
Mikio Masui
Shinji Matsui
Original Assignee
Panasonic Elec Works Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Elec Works Co Ltd filed Critical Panasonic Elec Works Co Ltd
Application granted granted Critical
Publication of ATE524837T1 publication Critical patent/ATE524837T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

Landscapes

  • Led Devices (AREA)
  • Casting Or Compression Moulding Of Plastics Or The Like (AREA)
  • Electroluminescent Light Sources (AREA)
AT04799734T 2003-11-12 2004-11-11 Verfahren zur herstellung eines lichtemittierenden bauelements ATE524837T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003383064A JP4124102B2 (ja) 2003-11-12 2003-11-12 多重反射防止構造を備えた発光素子とその製造方法
PCT/JP2004/017121 WO2005048361A2 (en) 2003-11-12 2004-11-11 A method for producing a light-emitting device

Publications (1)

Publication Number Publication Date
ATE524837T1 true ATE524837T1 (de) 2011-09-15

Family

ID=34587280

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04799734T ATE524837T1 (de) 2003-11-12 2004-11-11 Verfahren zur herstellung eines lichtemittierenden bauelements

Country Status (7)

Country Link
US (1) US7709282B2 (de)
EP (1) EP1683205B1 (de)
JP (1) JP4124102B2 (de)
CN (1) CN100472824C (de)
AT (1) ATE524837T1 (de)
TW (1) TWI264834B (de)
WO (1) WO2005048361A2 (de)

Families Citing this family (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1620903B1 (de) 2003-04-30 2017-08-16 Cree, Inc. Festkörper-hochleistungslichtquelle
US7534633B2 (en) 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
WO2007009042A1 (en) * 2005-07-11 2007-01-18 Gelcore Llc Laser lift-off led with improved light extraction
WO2007031929A1 (en) * 2005-09-16 2007-03-22 Koninklijke Philips Electronics N.V. Method for manufacturing led wafer with light extracting layer
JP4696836B2 (ja) * 2005-10-19 2011-06-08 セイコーエプソン株式会社 静電アクチュエータの製造方法および静電アクチュエータ
JP2007142277A (ja) * 2005-11-21 2007-06-07 Matsushita Electric Works Ltd 発光素子の製造方法
JP2007173579A (ja) * 2005-12-22 2007-07-05 Matsushita Electric Works Ltd 半導体発光素子およびその製造方法
KR100658970B1 (ko) 2006-01-09 2006-12-19 주식회사 메디아나전자 복합 파장의 광을 발생시키는 발광 다이오드 소자
KR100703216B1 (ko) * 2006-02-21 2007-04-09 삼성전기주식회사 발광다이오드 패키지의 제조 방법
JP4790481B2 (ja) * 2006-04-26 2011-10-12 株式会社小糸製作所 車両用灯具ユニット
CN101455121B (zh) * 2006-06-14 2012-06-27 株式会社半导体能源研究所 制造半导体器件的方法
KR101257872B1 (ko) * 2006-07-26 2013-04-23 엘지전자 주식회사 발광 소자 및 그 제조방법
SG140473A1 (en) * 2006-08-16 2008-03-28 Tinggi Tech Private Ltd Improvements in external light efficiency of light emitting diodes
JP2008066557A (ja) * 2006-09-08 2008-03-21 Matsushita Electric Ind Co Ltd 半導体発光装置および半導体発光装置の製造方法
US20100224890A1 (en) * 2006-09-18 2010-09-09 Cree, Inc. Light emitting diode chip with electrical insulation element
EP2843716A3 (de) 2006-11-15 2015-04-29 The Regents of The University of California Leuchtdiode mit strukturierter Phosphorumwandlungsschicht
WO2008073400A1 (en) 2006-12-11 2008-06-19 The Regents Of The University Of California Transparent light emitting diodes
CN102683376A (zh) 2007-01-22 2012-09-19 科锐公司 高压发光体、发光体及照明装置
US9391118B2 (en) * 2007-01-22 2016-07-12 Cree, Inc. Fault tolerant light emitters, systems incorporating fault tolerant light emitters and methods of fabricating fault tolerant light emitters
JP2008181910A (ja) * 2007-01-23 2008-08-07 Mitsubishi Chemicals Corp ＧａＮ系発光ダイオード素子の製造方法
US8021904B2 (en) * 2007-02-01 2011-09-20 Cree, Inc. Ohmic contacts to nitrogen polarity GaN
JP5078488B2 (ja) 2007-03-05 2012-11-21 富士フイルム株式会社 発光素子およびその製造方法ならびに光学素子およびその製造方法
TWI357886B (en) 2007-08-13 2012-02-11 Epistar Corp Stamp having nanometer scale structure and applica
US11114594B2 (en) * 2007-08-24 2021-09-07 Creeled, Inc. Light emitting device packages using light scattering particles of different size
US9634191B2 (en) * 2007-11-14 2017-04-25 Cree, Inc. Wire bond free wafer level LED
US8368100B2 (en) 2007-11-14 2013-02-05 Cree, Inc. Semiconductor light emitting diodes having reflective structures and methods of fabricating same
US8536584B2 (en) * 2007-11-14 2013-09-17 Cree, Inc. High voltage wire bond free LEDS
JP4993371B2 (ja) * 2007-11-21 2012-08-08 サンケン電気株式会社 半導体発光素子用ウエーハの粗面化方法及び半導体発光素子
US9431589B2 (en) 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
CN101487974B (zh) * 2008-01-17 2013-06-12 晶元光电股份有限公司 一种纳米级印模结构及其在发光元件上的应用
JP2009218569A (ja) * 2008-02-13 2009-09-24 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体からなる発光素子とその製造方法
US8384115B2 (en) * 2008-08-01 2013-02-26 Cree, Inc. Bond pad design for enhancing light extraction from LED chips
US8633501B2 (en) 2008-08-12 2014-01-21 Epistar Corporation Light-emitting device having a patterned surface
JP5359154B2 (ja) * 2008-09-26 2013-12-04 住友電気工業株式会社 回折格子の形成方法および分布帰還型半導体レーザの製造方法
JP2010109015A (ja) * 2008-10-28 2010-05-13 Panasonic Electric Works Co Ltd 半導体発光素子の製造方法
DE102009008223A1 (de) * 2009-02-10 2010-08-12 Osram Opto Semiconductors Gmbh Verfahren zur Strukturierung einer Halbleiteroberfläche und Halbleiterchip
EP2416622B1 (de) * 2009-03-31 2019-01-30 Toppan Printing Co., Ltd. El-tafel sowie beleuchtungsvorrichtung und anzeigevorrichtung mit der el-tafel
US8476668B2 (en) * 2009-04-06 2013-07-02 Cree, Inc. High voltage low current surface emitting LED
US9093293B2 (en) 2009-04-06 2015-07-28 Cree, Inc. High voltage low current surface emitting light emitting diode
US8741715B2 (en) * 2009-04-29 2014-06-03 Cree, Inc. Gate electrodes for millimeter-wave operation and methods of fabrication
DE102009023355A1 (de) 2009-05-29 2010-12-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
JP5509840B2 (ja) * 2009-12-22 2014-06-04 豊田合成株式会社 半導体発光素子の製造方法
US8772805B2 (en) 2010-03-31 2014-07-08 Seoul Viosys Co., Ltd. High efficiency light emitting diode and method for fabricating the same
DE102010020162A1 (de) * 2010-05-11 2011-11-17 Osram Opto Semiconductors Gmbh Verfahren zur Strukturierung eines Strahlungsauskoppelelements
US9070851B2 (en) 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
US8455882B2 (en) 2010-10-15 2013-06-04 Cree, Inc. High efficiency LEDs
JP2012124257A (ja) * 2010-12-07 2012-06-28 Toshiba Corp 半導体発光素子及びその製造方法
JP5833325B2 (ja) * 2011-03-23 2015-12-16 スタンレー電気株式会社 深紫外光源
KR101795029B1 (ko) 2011-04-25 2017-11-07 엘지이노텍 주식회사 뷰 각도를 증가시키기 위한 광소자 패키지
WO2012164456A1 (en) * 2011-06-01 2012-12-06 Koninklijke Philips Electronics N.V. Method of attaching a light emitting device to a support substrate
JP6429626B2 (ja) * 2011-09-06 2018-11-28 センサー エレクトロニック テクノロジー インコーポレイテッド 層成長のためのパターンを有する基板の設計
US10032956B2 (en) 2011-09-06 2018-07-24 Sensor Electronic Technology, Inc. Patterned substrate design for layer growth
CN103009845A (zh) * 2011-09-20 2013-04-03 大亚科技股份有限公司 一种凹凸和压纹一次加工工艺
JP5250162B1 (ja) 2011-11-21 2013-07-31 パナソニック株式会社 発光装置及び照明装置
EP2803093B1 (de) * 2012-01-10 2019-06-26 Lumileds Holding B.V. Gesteuerte led-lichtausgabe durch selektive bereichsaufrauung
JP6002427B2 (ja) * 2012-04-19 2016-10-05 旭化成株式会社 Ｌｅｄ用基板及びその製造方法
JP2014229648A (ja) * 2013-05-20 2014-12-08 シャープ株式会社 半導体発光素子
CN104241262B (zh) 2013-06-14 2020-11-06 惠州科锐半导体照明有限公司 发光装置以及显示装置
TWI814461B (zh) * 2014-06-18 2023-09-01 愛爾蘭商艾克斯展示公司技術有限公司 微組裝發光二極體顯示器及照明元件
GR1008582B (el) * 2014-07-31 2015-10-06 Ιδρυμα Τεχνολογιας Και Ερευνας (Ιτε), Διαμορφωσεις αποδομησης υποστρωματος sic και κατασκευη συσκευων διοδων εκπομπης φωτος
USD826871S1 (en) 2014-12-11 2018-08-28 Cree, Inc. Light emitting diode device
DE102015102365A1 (de) 2015-02-19 2016-08-25 Osram Opto Semiconductors Gmbh Strahlungskörper und Verfahren zur Herstellung eines Strahlungskörpers
JP6034456B2 (ja) * 2015-07-16 2016-11-30 株式会社東芝 半導体発光装置及び発光装置
CN205944139U (zh) 2016-03-30 2017-02-08 首尔伟傲世有限公司 紫外线发光二极管封装件以及包含此的发光二极管模块
JP2018029112A (ja) * 2016-08-17 2018-02-22 株式会社ディスコ 発光ダイオードチップの製造方法及び発光ダイオードチップ
JP2018029114A (ja) * 2016-08-17 2018-02-22 株式会社ディスコ 発光ダイオードチップの製造方法及び発光ダイオードチップ
JP2018029113A (ja) * 2016-08-17 2018-02-22 株式会社ディスコ 発光ダイオードチップの製造方法
JP2018046068A (ja) * 2016-09-12 2018-03-22 株式会社ディスコ 発光ダイオードチップの製造方法
JP2018046065A (ja) * 2016-09-12 2018-03-22 株式会社ディスコ 発光ダイオードチップの製造方法及び発光ダイオードチップ
JP2018046067A (ja) * 2016-09-12 2018-03-22 株式会社ディスコ 発光ダイオードチップの製造方法及び発光ダイオードチップ
JP2018046066A (ja) * 2016-09-12 2018-03-22 株式会社ディスコ 発光ダイオードチップの製造方法
JP2018046064A (ja) * 2016-09-12 2018-03-22 株式会社ディスコ 発光ダイオードチップの製造方法及び発光ダイオードチップ
CN108365028A (zh) * 2018-01-30 2018-08-03 北京世纪金光半导体有限公司 一种碳化硅器件表面制绒方法
CN110120623B (zh) * 2018-02-05 2021-06-08 深圳光峰科技股份有限公司 密封件及发光装置
DE102019101346A1 (de) * 2019-01-18 2020-07-23 Osram Opto Semiconductors Gmbh Nanostempelverfahren und nanooptisches bauteil
JP2020155771A (ja) * 2019-03-18 2020-09-24 株式会社リコー 光学装置、照明装置、計測装置、部品検査装置、ロボット、電子機器及び移動体
CN112166507B (zh) * 2020-01-06 2022-07-22 厦门三安光电有限公司 一种发光二极管的制作方法
US11592166B2 (en) 2020-05-12 2023-02-28 Feit Electric Company, Inc. Light emitting device having improved illumination and manufacturing flexibility
US11876042B2 (en) 2020-08-03 2024-01-16 Feit Electric Company, Inc. Omnidirectional flexible light emitting device
TWI907311B (zh) * 2020-09-17 2025-12-01 晶智達光電股份有限公司 雷射封裝結構

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63283174A (ja) 1987-05-15 1988-11-21 Omron Tateisi Electronics Co 発光ダイオ−ド
JP2836687B2 (ja) 1993-04-03 1998-12-14 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
JPH09166874A (ja) 1995-12-15 1997-06-24 Hitachi Ltd パターン形成方法及び半導体装置製造方法
US5779924A (en) * 1996-03-22 1998-07-14 Hewlett-Packard Company Ordered interface texturing for a light emitting device
JP3643225B2 (ja) 1997-12-03 2005-04-27 ローム株式会社 光半導体チップ
US6504180B1 (en) * 1998-07-28 2003-01-07 Imec Vzw And Vrije Universiteit Method of manufacturing surface textured high-efficiency radiating devices and devices obtained therefrom
JP3469484B2 (ja) * 1998-12-24 2003-11-25 株式会社東芝 半導体発光素子およびその製造方法
JP2000232095A (ja) * 1999-02-12 2000-08-22 Nippon Telegr & Teleph Corp <Ntt> 半導体表面の微細パターン形成方法
TW465123B (en) * 2000-02-02 2001-11-21 Ind Tech Res Inst High power white light LED
TW445507B (en) * 2000-07-20 2001-07-11 United Epitaxy Co Ltd Roughened interface of light emitting device
US7041394B2 (en) * 2001-03-15 2006-05-09 Seagate Technology Llc Magnetic recording media having self organized magnetic arrays
US6987613B2 (en) * 2001-03-30 2006-01-17 Lumileds Lighting U.S., Llc Forming an optical element on the surface of a light emitting device for improved light extraction
JP4734770B2 (ja) 2001-06-12 2011-07-27 ソニー株式会社 樹脂形成素子の製造方法、画像表示装置の製造方法、および照明装置の製造方法
TW564584B (en) 2001-06-25 2003-12-01 Toshiba Corp Semiconductor light emitting device
JP4208447B2 (ja) * 2001-09-26 2009-01-14 独立行政法人科学技術振興機構 Ｓｏｇを用いた室温ナノ−インプリント−リソグラフィー
US7072096B2 (en) * 2001-12-14 2006-07-04 Digital Optics International, Corporation Uniform illumination system
TW576864B (en) * 2001-12-28 2004-02-21 Toshiba Corp Method for manufacturing a light-emitting device
JP3782357B2 (ja) 2002-01-18 2006-06-07 株式会社東芝 半導体発光素子の製造方法
JP4233268B2 (ja) 2002-04-23 2009-03-04 シャープ株式会社 窒化物系半導体発光素子およびその製造方法
JP2003347586A (ja) 2003-07-08 2003-12-05 Toshiba Corp 半導体発光素子
US7175966B2 (en) * 2003-09-19 2007-02-13 International Business Machines Corporation Water and aqueous base soluble antireflective coating/hardmask materials
US7012279B2 (en) * 2003-10-21 2006-03-14 Lumileds Lighting U.S., Llc Photonic crystal light emitting device

Also Published As

Publication number Publication date
US20070065960A1 (en) 2007-03-22
WO2005048361A2 (en) 2005-05-26
JP4124102B2 (ja) 2008-07-23
US7709282B2 (en) 2010-05-04
EP1683205A2 (de) 2006-07-26
TW200529470A (en) 2005-09-01
CN100472824C (zh) 2009-03-25
TWI264834B (en) 2006-10-21
WO2005048361A3 (en) 2006-01-26
EP1683205B1 (de) 2011-09-14
JP2005150261A (ja) 2005-06-09
CN1871713A (zh) 2006-11-29

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