ATE535913T1 - Verbesserter programmieralgorithmus zur störungsminderung mit minimaler extrazeitstrafe - Google Patents

Verbesserter programmieralgorithmus zur störungsminderung mit minimaler extrazeitstrafe

Info

Publication number
ATE535913T1
ATE535913T1 AT09770884T AT09770884T ATE535913T1 AT E535913 T1 ATE535913 T1 AT E535913T1 AT 09770884 T AT09770884 T AT 09770884T AT 09770884 T AT09770884 T AT 09770884T AT E535913 T1 ATE535913 T1 AT E535913T1
Authority
AT
Austria
Prior art keywords
state cells
programming
high state
programmed
disruption
Prior art date
Application number
AT09770884T
Other languages
English (en)
Inventor
Dana Lee
Deepanshu Dutta
Yingda Dong
Original Assignee
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sandisk Corp filed Critical Sandisk Corp
Application granted granted Critical
Publication of ATE535913T1 publication Critical patent/ATE535913T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/562—Multilevel memory programming aspects
    • G11C2211/5621—Multilevel programming verification

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
AT09770884T 2008-06-27 2009-06-23 Verbesserter programmieralgorithmus zur störungsminderung mit minimaler extrazeitstrafe ATE535913T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/163,073 US7800956B2 (en) 2008-06-27 2008-06-27 Programming algorithm to reduce disturb with minimal extra time penalty
PCT/US2009/048311 WO2009158350A1 (en) 2008-06-27 2009-06-23 Improved programming algorithm to reduce disturb with minimal extra time penalty

Publications (1)

Publication Number Publication Date
ATE535913T1 true ATE535913T1 (de) 2011-12-15

Family

ID=41056765

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09770884T ATE535913T1 (de) 2008-06-27 2009-06-23 Verbesserter programmieralgorithmus zur störungsminderung mit minimaler extrazeitstrafe

Country Status (8)

Country Link
US (1) US7800956B2 (de)
EP (1) EP2301033B1 (de)
JP (1) JP5203510B2 (de)
KR (1) KR101546460B1 (de)
CN (1) CN102138181B (de)
AT (1) ATE535913T1 (de)
TW (1) TWI416527B (de)
WO (1) WO2009158350A1 (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100323554B1 (ko) * 1997-05-14 2002-03-08 니시무로 타이죠 불휘발성반도체메모리장치
JP5412063B2 (ja) * 2008-07-10 2014-02-12 三星電子株式会社 不揮発性半導体記憶装置
US8223551B2 (en) * 2009-02-19 2012-07-17 Micron Technology, Inc. Soft landing for desired program threshold voltage
KR101005145B1 (ko) * 2009-03-06 2011-01-04 주식회사 하이닉스반도체 불휘발성 메모리 소자의 프로그램 방법
JP2011150749A (ja) * 2010-01-20 2011-08-04 Toshiba Corp 不揮発性半導体記憶装置
KR101620025B1 (ko) * 2010-02-19 2016-05-24 삼성전자주식회사 데이터 저장 시스템 및 그것의 오픈 블록 관리 방법
KR20110131648A (ko) 2010-05-31 2011-12-07 삼성전자주식회사 비휘발성 메모리 장치, 그것을 포함한 메모리 시스템 및 메모리 카드 및 그것의 프로그램 방법
US8310870B2 (en) 2010-08-03 2012-11-13 Sandisk Technologies Inc. Natural threshold voltage distribution compaction in non-volatile memory
US8369149B2 (en) 2010-09-30 2013-02-05 Sandisk Technologies Inc. Multi-step channel boosting to reduce channel to floating gate coupling in memory
KR101798013B1 (ko) 2010-12-30 2017-11-16 삼성전자주식회사 비휘발성 메모리 장치의 프로그램 방법
KR101821604B1 (ko) * 2011-07-25 2018-01-24 삼성전자주식회사 비휘발성 메모리 장치의 프로그램 방법
JP5380510B2 (ja) 2011-09-30 2014-01-08 株式会社東芝 不揮発性半導体記憶装置
US9082510B2 (en) * 2012-09-14 2015-07-14 Freescale Semiconductor, Inc. Non-volatile memory (NVM) with adaptive write operations
KR102053953B1 (ko) 2013-02-04 2019-12-11 삼성전자주식회사 불휘발성 메모리 장치를 포함하는 메모리 시스템 및 그것의 프로그램 방법
US8929142B2 (en) 2013-02-05 2015-01-06 Sandisk Technologies Inc. Programming select gate transistors and memory cells using dynamic verify level
US20140281842A1 (en) * 2013-03-14 2014-09-18 Fusion-Io, Inc. Non-Volatile Cells Having a Non-Power-of-Two Number of States
KR102125376B1 (ko) * 2013-07-01 2020-06-23 삼성전자주식회사 저장 장치 및 그것의 쓰기 방법
WO2015004712A1 (ja) * 2013-07-08 2015-01-15 株式会社 東芝 ロックアウトモードとノーロックアウトモードを有する半導体記憶装置
US9007841B1 (en) * 2013-10-24 2015-04-14 Western Digital Technologies, Inc. Programming scheme for improved voltage distribution in solid-state memory
KR20160047667A (ko) * 2014-10-22 2016-05-03 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 프로그램 방법
US9496040B2 (en) * 2015-01-22 2016-11-15 Sandisk Technologies Llc Adaptive multi-page programming methods and apparatus for non-volatile memory
US9865352B2 (en) * 2015-10-28 2018-01-09 Sandisk Technologies, Llc Program sequencing
US9711211B2 (en) 2015-10-29 2017-07-18 Sandisk Technologies Llc Dynamic threshold voltage compaction for non-volatile memory
US9564226B1 (en) 2015-10-30 2017-02-07 Sandisk Technologies Llc Smart verify for programming non-volatile memory
CN106856102B (zh) * 2015-12-08 2020-11-03 西安格易安创集成电路有限公司 一种Nand Flash的编程方法
JP6441250B2 (ja) * 2016-03-15 2018-12-19 東芝メモリ株式会社 半導体記憶装置
KR102565888B1 (ko) * 2016-09-12 2023-08-11 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그것의 동작 방법
JP2018055736A (ja) * 2016-09-26 2018-04-05 東芝メモリ株式会社 半導体記憶装置
KR102683414B1 (ko) * 2017-01-26 2024-07-10 삼성전자주식회사 비휘발성 메모리 장치 및 그것의 프로그램 방법
KR102504295B1 (ko) 2017-11-24 2023-02-27 삼성전자 주식회사 비휘발성 메모리 장치 및 이의 프로그램 방법
EP3891745B1 (de) 2019-10-12 2023-09-06 Yangtze Memory Technologies Co., Ltd. Verfahren zur programmierung einer speichervorrichtung und zugehörige speichervorrichtung
KR102873067B1 (ko) * 2020-11-17 2025-10-16 삼성전자주식회사 메모리 장치, 메모리 시스템 및 이들의 동작 방법
US11581049B2 (en) * 2021-06-01 2023-02-14 Sandisk Technologies Llc System and methods for programming nonvolatile memory having partial select gate drains
US11475959B1 (en) * 2021-06-30 2022-10-18 Sandisk Technologies Llc Reduced program time for memory cells using negative bit line voltage for enhanced step up of program bias

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960002006B1 (ko) 1991-03-12 1996-02-09 가부시끼가이샤 도시바 2개의 기준 레벨을 사용하는 기록 검증 제어기를 갖는 전기적으로 소거 가능하고 프로그램 가능한 불휘발성 메모리 장치
US6222762B1 (en) 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
US5555204A (en) 1993-06-29 1996-09-10 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device
KR0169267B1 (ko) 1993-09-21 1999-02-01 사토 후미오 불휘발성 반도체 기억장치
DE69533429T2 (de) 1995-06-07 2005-08-18 Macronix International Co. Ltd., Hsinchu Automatischer progammier-algorithmus für flash-speicher im seitenmodus mit variabler programmierimpulshöhe und -breite
US5903495A (en) 1996-03-18 1999-05-11 Kabushiki Kaisha Toshiba Semiconductor device and memory system
TW338165B (en) 1996-09-09 1998-08-11 Sony Co Ltd Semiconductor nand type flash memory with incremental step pulse programming
US6327183B1 (en) 2000-01-10 2001-12-04 Advanced Micro Devices, Inc. Nonlinear stepped programming voltage
DE60139670D1 (de) 2001-04-10 2009-10-08 St Microelectronics Srl Verfahren zur Programmierung nichtflüchtiger Speicherzellen mit Programmier- und Prüfalgorithmus unter Verwendung treppenförmiger Spannungsimpulse mit variablem Stufenabstand
US6522580B2 (en) 2001-06-27 2003-02-18 Sandisk Corporation Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
US6456528B1 (en) 2001-09-17 2002-09-24 Sandisk Corporation Selective operation of a multi-state non-volatile memory system in a binary mode
US6714448B2 (en) 2002-07-02 2004-03-30 Atmel Corporation Method of programming a multi-level memory device
US6781877B2 (en) 2002-09-06 2004-08-24 Sandisk Corporation Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cells
US7196931B2 (en) 2002-09-24 2007-03-27 Sandisk Corporation Non-volatile memory and method with reduced source line bias errors
US7327619B2 (en) 2002-09-24 2008-02-05 Sandisk Corporation Reference sense amplifier for non-volatile memory
US7046568B2 (en) 2002-09-24 2006-05-16 Sandisk Corporation Memory sensing circuit and method for low voltage operation
US6859397B2 (en) 2003-03-05 2005-02-22 Sandisk Corporation Source side self boosting technique for non-volatile memory
US7237074B2 (en) 2003-06-13 2007-06-26 Sandisk Corporation Tracking cells for a memory system
US6917542B2 (en) * 2003-07-29 2005-07-12 Sandisk Corporation Detecting over programmed memory
US7177199B2 (en) * 2003-10-20 2007-02-13 Sandisk Corporation Behavior based programming of non-volatile memory
US6888758B1 (en) 2004-01-21 2005-05-03 Sandisk Corporation Programming non-volatile memory
US7020017B2 (en) 2004-04-06 2006-03-28 Sandisk Corporation Variable programming of non-volatile memory
US7020026B2 (en) 2004-05-05 2006-03-28 Sandisk Corporation Bitline governed approach for program control of non-volatile memory
KR100645055B1 (ko) 2004-10-28 2006-11-10 삼성전자주식회사 플래시 메모리 장치 및 그것의 프로그램 방법
US7092290B2 (en) * 2004-11-16 2006-08-15 Sandisk Corporation High speed programming system with reduced over programming
US7173859B2 (en) 2004-11-16 2007-02-06 Sandisk Corporation Faster programming of higher level states in multi-level cell flash memory
US7120051B2 (en) 2004-12-14 2006-10-10 Sandisk Corporation Pipelined programming of non-volatile memories using early data
US20060140007A1 (en) 2004-12-29 2006-06-29 Raul-Adrian Cernea Non-volatile memory and method with shared processing for an aggregate of read/write circuits
US7196928B2 (en) 2005-04-05 2007-03-27 Sandisk Corporation Compensating for coupling during read operations of non-volatile memory
KR100655442B1 (ko) 2005-09-01 2006-12-08 삼성전자주식회사 프로그램 스타트 전압을 가변시킬 수 있는 플래시 메모리장치
US7218552B1 (en) 2005-09-09 2007-05-15 Sandisk Corporation Last-first mode and method for programming of non-volatile memory with reduced program disturb
US7606084B2 (en) * 2006-06-19 2009-10-20 Sandisk Corporation Programming differently sized margins and sensing with compensations at select states for improved read operations in non-volatile memory
KR101041595B1 (ko) * 2006-06-19 2011-06-15 샌디스크 코포레이션 비휘발성 메모리에서 개선된 판독 동작을 위해 선택 상태에서 보상을 사용하여 감지 및 다른 크기의 마진 프로그래밍
US7457144B2 (en) * 2006-07-19 2008-11-25 Qimonda Flash Gmbh & Co. Kg Memory device and method for verifying information stored in memory cells
US7511996B2 (en) * 2006-11-30 2009-03-31 Mosaid Technologies Incorporated Flash memory program inhibit scheme
KR100811274B1 (ko) * 2006-12-28 2008-03-07 주식회사 하이닉스반도체 낸드형 플래쉬 메모리소자의 데이터 소거방법

Also Published As

Publication number Publication date
EP2301033A1 (de) 2011-03-30
WO2009158350A1 (en) 2009-12-30
JP2011526049A (ja) 2011-09-29
CN102138181A (zh) 2011-07-27
KR20110049782A (ko) 2011-05-12
CN102138181B (zh) 2014-09-10
US7800956B2 (en) 2010-09-21
TW201007761A (en) 2010-02-16
JP5203510B2 (ja) 2013-06-05
US20090323429A1 (en) 2009-12-31
TWI416527B (zh) 2013-11-21
EP2301033B1 (de) 2011-11-30
KR101546460B1 (ko) 2015-08-24

Similar Documents

Publication Publication Date Title
ATE535913T1 (de) Verbesserter programmieralgorithmus zur störungsminderung mit minimaler extrazeitstrafe
Nannoolal et al. Estimation of pure component properties: Part 3. Estimation of the vapor pressure of non-electrolyte organic compounds via group contributions and group interactions
Babazadeh et al. A sustainable second-generation biodiesel supply chain network design problem under risk
Oliveira-Filho et al. Stability structures tropical woody plant diversity more than seasonality: insights into the ecology of high legume-succulent-plant biodiversity
Syaichurrozi et al. Kinetic model of biogas yield production from vinasse at various initial pH: comparison between modified Gompertz model and first order kinetic model
TW200723282A (en) System and method for programming cells in non-volatile integrated memory devices
WO2006107796A3 (en) Faster programming of higher level states in multi-level cell flash memory
WO2008124760A3 (en) Non-volatile memory and method for predictive programming
WO2011005401A4 (en) Reduced programming pulse width for enhanced channel boosting in non-volatile storage
GB2436055B (en) Multi-level ono flash program algorithm for threshold width control
WO2010080141A3 (en) Memory system controller
WO2014043574A3 (en) Reference cell repair scheme
TW200943302A (en) Charge loss compensation during programming of a memory device
DE602005004027D1 (de) Nichtflüchtiges speichersystem mit programmzeitsteuerung
ATE481714T1 (de) Segmentierte bit-abtastung zur programmierungsprüfung
Grothe et al. Measuring association and dependence between random vectors
EA201070686A1 (ru) Стиральная машина с циклом защиты от ультрафиолетовых лучей
ATE521972T1 (de) Programmierung eines nicht-flüchtigen speichers mit selbst-regulierender maximaler programmschleife
EP2518125A4 (de) Wasser- und ölabweisende zusammensetzung, verfahren zu ihrer herstellung und verfahren zur behandlung eines artikels
TW200641899A (en) Program method of flash memory device
Botur et al. The Conrad program: from ℓ-groups to algebras of logic
EA201591447A1 (ru) Способы и композиции для повышения эффективности направленной модификации генов с применением опосредованной олигонуклеотидами репарации генов
RU2017119220A (ru) Способы усовершенствования растений
TW200951707A (en) Program test device and program
WO2009152037A3 (en) Nonvolatile memory and method for correlated multiple pass programming