ATE537689T1 - Plasmabehandlungsspule - Google Patents

Plasmabehandlungsspule

Info

Publication number
ATE537689T1
ATE537689T1 AT02780307T AT02780307T ATE537689T1 AT E537689 T1 ATE537689 T1 AT E537689T1 AT 02780307 T AT02780307 T AT 02780307T AT 02780307 T AT02780307 T AT 02780307T AT E537689 T1 ATE537689 T1 AT E537689T1
Authority
AT
Austria
Prior art keywords
winding
coil
spacing
plasma treatment
adjacent turns
Prior art date
Application number
AT02780307T
Other languages
English (en)
Inventor
Neil Benjamin
David Cooperberg
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Application granted granted Critical
Publication of ATE537689T1 publication Critical patent/ATE537689T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Magnetic Treatment Devices (AREA)
AT02780307T 2001-09-14 2002-09-16 Plasmabehandlungsspule ATE537689T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US32258101P 2001-09-14 2001-09-14
US10/242,795 US7571697B2 (en) 2001-09-14 2002-09-13 Plasma processor coil
PCT/US2002/029223 WO2003026364A2 (en) 2001-09-14 2002-09-16 Plasma processor coil

Publications (1)

Publication Number Publication Date
ATE537689T1 true ATE537689T1 (de) 2011-12-15

Family

ID=29218501

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02780307T ATE537689T1 (de) 2001-09-14 2002-09-16 Plasmabehandlungsspule

Country Status (8)

Country Link
US (1) US7571697B2 (de)
EP (1) EP1425777B1 (de)
JP (2) JP4880873B2 (de)
KR (3) KR20040029178A (de)
CN (1) CN100421207C (de)
AT (1) ATE537689T1 (de)
AU (1) AU2002343368A1 (de)
WO (1) WO2003026364A2 (de)

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CN100437844C (zh) * 2005-12-05 2008-11-26 北京北方微电子基地设备工艺研究中心有限责任公司 电感耦合线圈
CN100429740C (zh) * 2005-12-02 2008-10-29 北京北方微电子基地设备工艺研究中心有限责任公司 一种可调整局部耦合强度的icp线圈
CN101500369B (zh) * 2008-01-30 2011-06-15 北京北方微电子基地设备工艺研究中心有限责任公司 电感耦合线圈及电感耦合等离子体发生装置
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JP5551343B2 (ja) * 2008-05-14 2014-07-16 東京エレクトロン株式会社 誘導結合プラズマ処理装置
JP5231308B2 (ja) * 2009-03-31 2013-07-10 東京エレクトロン株式会社 プラズマ処理装置
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JP5840268B1 (ja) * 2014-08-25 2016-01-06 株式会社日立国際電気 基板処理装置、半導体装置の製造方法および記録媒体
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US12296313B2 (en) 2015-10-01 2025-05-13 Milton Roy, Llc System and method for formulating medical treatment effluents
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JP7002268B2 (ja) * 2017-09-28 2022-01-20 東京エレクトロン株式会社 プラズマ処理装置
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CN113496863B (zh) * 2020-04-01 2022-04-12 吉佳蓝科技股份有限公司 等离子体天线模块
CN111785605A (zh) * 2020-06-23 2020-10-16 北京北方华创微电子装备有限公司 一种线圈结构及半导体加工设备
KR102998935B1 (ko) * 2020-10-06 2026-07-31 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 플라즈마 처리용 코일
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KR20220107521A (ko) * 2021-01-25 2022-08-02 (주) 엔피홀딩스 반응기, 이를 포함하는 공정 처리 장치 및 반응기 제조 방법
CN115604899A (zh) * 2021-07-09 2023-01-13 北京北方华创微电子装备有限公司（Cn） 用于产生等离子体的线圈结构及半导体工艺设备
KR102735887B1 (ko) * 2021-11-18 2024-12-02 피에스케이 주식회사 기판 처리 장치 및 기판 처리 방법
JP7844905B2 (ja) * 2022-02-09 2026-04-14 セイコーエプソン株式会社 誘電加熱装置
KR20250129021A (ko) * 2022-12-21 2025-08-28 램 리써치 코포레이션 병렬 헬리컬 rf 코일을 갖는 유도성으로 커플링된 플라즈마 소스
CN116169001B (zh) * 2023-01-18 2026-06-02 深圳市原速光电科技有限公司 电感耦合等离子体装置以及镀膜设备
JP2025011651A (ja) * 2023-07-11 2025-01-24 パナソニックＩｐマネジメント株式会社 プラズマ処理装置
CN117038289B (zh) * 2023-08-25 2026-06-30 昆明理工大学 一种对称多绕组分离式平面变压器及其设计方法

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Also Published As

Publication number Publication date
WO2003026364A3 (en) 2003-10-30
JP2005503658A (ja) 2005-02-03
EP1425777A2 (de) 2004-06-09
AU2002343368A1 (en) 2003-04-01
CN100421207C (zh) 2008-09-24
JP2010232180A (ja) 2010-10-14
KR20110102494A (ko) 2011-09-16
US7571697B2 (en) 2009-08-11
KR20100024483A (ko) 2010-03-05
WO2003026364B1 (en) 2003-12-04
US20030067273A1 (en) 2003-04-10
CN1582485A (zh) 2005-02-16
JP4880873B2 (ja) 2012-02-22
JP5048098B2 (ja) 2012-10-17
KR20040029178A (ko) 2004-04-03
WO2003026364A8 (en) 2004-01-15
WO2003026364A2 (en) 2003-03-27
KR101221175B1 (ko) 2013-01-10
EP1425777B1 (de) 2011-12-14

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