ATE538473T1 - Magnetoresistiver speicher - Google Patents

Magnetoresistiver speicher

Info

Publication number
ATE538473T1
ATE538473T1 AT09150576T AT09150576T ATE538473T1 AT E538473 T1 ATE538473 T1 AT E538473T1 AT 09150576 T AT09150576 T AT 09150576T AT 09150576 T AT09150576 T AT 09150576T AT E538473 T1 ATE538473 T1 AT E538473T1
Authority
AT
Austria
Prior art keywords
ferromagnetic region
magnetoresistic
memory
orientations
magnetisation
Prior art date
Application number
AT09150576T
Other languages
English (en)
Inventor
Joerg Wunderlich
Jan Zemen
Claude Chappert
Brian Gallagher
Thibaut Devolder
David Williams
Tomas Jungwirth
Original Assignee
Hitachi Ltd
Univ Paris Sud Xi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Univ Paris Sud Xi filed Critical Hitachi Ltd
Application granted granted Critical
Publication of ATE538473T1 publication Critical patent/ATE538473T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/18—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using Hall-effect devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G11C13/06—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using magneto-optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
AT09150576T 2009-01-14 2009-01-14 Magnetoresistiver speicher ATE538473T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP09150576A EP2209123B1 (de) 2009-01-14 2009-01-14 Magnetoresistiver Speicher

Publications (1)

Publication Number Publication Date
ATE538473T1 true ATE538473T1 (de) 2012-01-15

Family

ID=40577712

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09150576T ATE538473T1 (de) 2009-01-14 2009-01-14 Magnetoresistiver speicher

Country Status (3)

Country Link
EP (1) EP2209123B1 (de)
JP (1) JP5508868B2 (de)
AT (1) ATE538473T1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5695451B2 (ja) 2011-03-04 2015-04-08 株式会社東芝 磁気メモリ及び磁気メモリ装置
JP5673951B2 (ja) * 2011-08-23 2015-02-18 独立行政法人産業技術総合研究所 電界強磁性共鳴励起方法及びそれを用いた磁気機能素子
JP5576449B2 (ja) * 2012-09-26 2014-08-20 株式会社東芝 不揮発性記憶装置
US8836058B2 (en) 2012-11-29 2014-09-16 International Business Machines Corporation Electrostatic control of magnetic devices
US9287322B2 (en) 2014-05-12 2016-03-15 Samsung Electronics Co., Ltd. Method for controlling magnetic properties through ion diffusion in a magnetic junction usable in spin transfer torque magnetic random access memory applications
US10862022B2 (en) 2018-12-06 2020-12-08 Sandisk Technologies Llc Spin-transfer torque MRAM with magnetically coupled assist layers and methods of operating the same
US10811596B2 (en) 2018-12-06 2020-10-20 Sandisk Technologies Llc Spin transfer torque MRAM with a spin torque oscillator stack and methods of making the same
US10726892B2 (en) 2018-12-06 2020-07-28 Sandisk Technologies Llc Metallic magnetic memory devices for cryogenic operation and methods of operating the same
US10797227B2 (en) 2018-12-06 2020-10-06 Sandisk Technologies Llc Spin-transfer torque MRAM with a negative magnetic anisotropy assist layer and methods of operating the same
RU2704732C1 (ru) * 2018-12-14 2019-10-30 Федеральное государственное бюджетное учреждение науки Институт проблем технологии микроэлектроники и особочистых материалов Российской академии наук Ячейка магнитной памяти с произвольным доступом
CN109742229A (zh) * 2018-12-26 2019-05-10 中国科学院微电子研究所 一种自旋轨道矩磁阻式随机存储器及其制造方法
CN118816695B (zh) * 2024-06-28 2025-08-08 西安交通大学 一种高温薄膜型应变传感器

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003007980A (ja) * 2001-06-20 2003-01-10 Sony Corp 磁気特性の変調方法および磁気機能装置
WO2004088753A1 (ja) * 2003-03-31 2004-10-14 Japan Science And Technology Agency スピン依存伝達特性を有するトンネルトランジスタ及びそれを用いた不揮発性メモリ
JP4297739B2 (ja) * 2003-06-17 2009-07-15 独立行政法人科学技術振興機構 量子サイズ効果を用いたスピン注入磁化反転磁気抵抗素子
JP4963007B2 (ja) * 2004-07-05 2012-06-27 独立行政法人産業技術総合研究所 光誘導磁化反転を用いた高速不揮発性光メモリ素子およびその動作方法
JP2006286713A (ja) * 2005-03-31 2006-10-19 Osaka Univ 磁気抵抗素子および磁化反転方法
EP1830410A1 (de) * 2006-02-24 2007-09-05 Hitachi, Ltd. Ein-Electron Tunnelbauelement
JP4840041B2 (ja) * 2006-09-20 2011-12-21 株式会社日立製作所 電界印加磁気記録方式および記録再生装置
EP2015307B8 (de) * 2007-07-13 2013-05-15 Hitachi Ltd. Magnetoresistive Vorrichtung

Also Published As

Publication number Publication date
JP5508868B2 (ja) 2014-06-04
EP2209123A1 (de) 2010-07-21
JP2010166054A (ja) 2010-07-29
EP2209123B1 (de) 2011-12-21

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