ATE538473T1 - Magnetoresistiver speicher - Google Patents
Magnetoresistiver speicherInfo
- Publication number
- ATE538473T1 ATE538473T1 AT09150576T AT09150576T ATE538473T1 AT E538473 T1 ATE538473 T1 AT E538473T1 AT 09150576 T AT09150576 T AT 09150576T AT 09150576 T AT09150576 T AT 09150576T AT E538473 T1 ATE538473 T1 AT E538473T1
- Authority
- AT
- Austria
- Prior art keywords
- ferromagnetic region
- magnetoresistic
- memory
- orientations
- magnetisation
- Prior art date
Links
- 230000005294 ferromagnetic effect Effects 0.000 abstract 3
- 230000005291 magnetic effect Effects 0.000 abstract 2
- 230000005684 electric field Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/18—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using Hall-effect devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
- G11C13/06—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using magneto-optical elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP09150576A EP2209123B1 (de) | 2009-01-14 | 2009-01-14 | Magnetoresistiver Speicher |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE538473T1 true ATE538473T1 (de) | 2012-01-15 |
Family
ID=40577712
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT09150576T ATE538473T1 (de) | 2009-01-14 | 2009-01-14 | Magnetoresistiver speicher |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP2209123B1 (de) |
| JP (1) | JP5508868B2 (de) |
| AT (1) | ATE538473T1 (de) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5695451B2 (ja) | 2011-03-04 | 2015-04-08 | 株式会社東芝 | 磁気メモリ及び磁気メモリ装置 |
| JP5673951B2 (ja) | 2011-08-23 | 2015-02-18 | 独立行政法人産業技術総合研究所 | 電界強磁性共鳴励起方法及びそれを用いた磁気機能素子 |
| JP5576449B2 (ja) * | 2012-09-26 | 2014-08-20 | 株式会社東芝 | 不揮発性記憶装置 |
| US8836058B2 (en) | 2012-11-29 | 2014-09-16 | International Business Machines Corporation | Electrostatic control of magnetic devices |
| US9287322B2 (en) | 2014-05-12 | 2016-03-15 | Samsung Electronics Co., Ltd. | Method for controlling magnetic properties through ion diffusion in a magnetic junction usable in spin transfer torque magnetic random access memory applications |
| US10726892B2 (en) | 2018-12-06 | 2020-07-28 | Sandisk Technologies Llc | Metallic magnetic memory devices for cryogenic operation and methods of operating the same |
| US10862022B2 (en) | 2018-12-06 | 2020-12-08 | Sandisk Technologies Llc | Spin-transfer torque MRAM with magnetically coupled assist layers and methods of operating the same |
| US10797227B2 (en) | 2018-12-06 | 2020-10-06 | Sandisk Technologies Llc | Spin-transfer torque MRAM with a negative magnetic anisotropy assist layer and methods of operating the same |
| US10811596B2 (en) | 2018-12-06 | 2020-10-20 | Sandisk Technologies Llc | Spin transfer torque MRAM with a spin torque oscillator stack and methods of making the same |
| RU2704732C1 (ru) * | 2018-12-14 | 2019-10-30 | Федеральное государственное бюджетное учреждение науки Институт проблем технологии микроэлектроники и особочистых материалов Российской академии наук | Ячейка магнитной памяти с произвольным доступом |
| CN109742229A (zh) * | 2018-12-26 | 2019-05-10 | 中国科学院微电子研究所 | 一种自旋轨道矩磁阻式随机存储器及其制造方法 |
| CN118816695B (zh) * | 2024-06-28 | 2025-08-08 | 西安交通大学 | 一种高温薄膜型应变传感器 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003007980A (ja) * | 2001-06-20 | 2003-01-10 | Sony Corp | 磁気特性の変調方法および磁気機能装置 |
| EP1610386A4 (de) * | 2003-03-31 | 2009-04-01 | Japan Science & Tech Agency | Tunneltransistor mit spin-abhängiger transfercharakteristik und nichtflüchtiger speicher damit |
| JP4297739B2 (ja) * | 2003-06-17 | 2009-07-15 | 独立行政法人科学技術振興機構 | 量子サイズ効果を用いたスピン注入磁化反転磁気抵抗素子 |
| JP4963007B2 (ja) * | 2004-07-05 | 2012-06-27 | 独立行政法人産業技術総合研究所 | 光誘導磁化反転を用いた高速不揮発性光メモリ素子およびその動作方法 |
| JP2006286713A (ja) * | 2005-03-31 | 2006-10-19 | Osaka Univ | 磁気抵抗素子および磁化反転方法 |
| EP1830410A1 (de) * | 2006-02-24 | 2007-09-05 | Hitachi, Ltd. | Ein-Electron Tunnelbauelement |
| JP4840041B2 (ja) * | 2006-09-20 | 2011-12-21 | 株式会社日立製作所 | 電界印加磁気記録方式および記録再生装置 |
| EP2015307B8 (de) * | 2007-07-13 | 2013-05-15 | Hitachi Ltd. | Magnetoresistive Vorrichtung |
-
2009
- 2009-01-14 AT AT09150576T patent/ATE538473T1/de active
- 2009-01-14 EP EP09150576A patent/EP2209123B1/de active Active
-
2010
- 2010-01-13 JP JP2010004787A patent/JP5508868B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP2209123A1 (de) | 2010-07-21 |
| EP2209123B1 (de) | 2011-12-21 |
| JP2010166054A (ja) | 2010-07-29 |
| JP5508868B2 (ja) | 2014-06-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE602008001518D1 (de) | Mit spin-polarisiertem Strom betriebene magnetische Speichervorrichtung und Speicher | |
| GB2498693B (en) | Non-volatile magnetic tunnel junction transistor | |
| TW200737185A (en) | Magnetic memory device and method for driving the same | |
| WO2012159078A3 (en) | Voltage-controlled magnetic anisotropy (vcma) switch and magneto-electric memory (meram) | |
| DE602005022180D1 (de) | Mit spin-dämmung erweitertes element mit magnetoresistiver wirkung und dieses verwendender magnetspeicher | |
| GB2459363B (en) | Compact superconducting magnet configuration with active shielding having a shielding coil contributing to field formation | |
| DE602006007696D1 (de) | Bistabiler und polarisierter elektromagnetischer aktuator zur schnellen betätigung | |
| ATE540407T1 (de) | Magnetspeicher mit magnettunnelübergang | |
| EP2779259A3 (de) | Magnetoresistive Strukturen und magnetische Direktzugriffspeichervorrichtungen damit | |
| GB2523932A (en) | Electric field enhanced spin transfer torque memory (STTM) device | |
| MY162696A (en) | Magnetic field downhole tool attachment | |
| EP2628028A4 (de) | Kernmagnetresonanzwerkzeug mit externen magneten | |
| EP3073532A4 (de) | Magnetoresistives element, spin-mosfet, magnetischer sensor und magnetkopf | |
| WO2011047163A3 (en) | Flapper valve and method | |
| GB2489901A (en) | Improved downhole tool and method | |
| EP2235725A4 (de) | Strömungsfokussierter geformter permanentmagnet, magneteinheit mit den magneten, vorrichtung mit den magneteinheiten und verfahren zur asymmetrischen fokussierung der strömungsfelder von permanentmagneten | |
| EP2891893A3 (de) | Stromsensor und Stromsensormodul | |
| ATE557397T1 (de) | Magnetelement mt einem wärmeunterstützten schreibverfahren | |
| ATE536618T1 (de) | Auswahlvorrichtung für einen magnetoresistiven speicher mit spin-transfer | |
| WO2011044100A3 (en) | Ferromagnetic resonance and memory effect in magnetic composite materials | |
| WO2015135814A3 (de) | Bistabiler elektromagnetischer aktuator und chirurgisches instrument | |
| WO2005104240A8 (en) | Magneto-electric field effect transistor for spintronic applications | |
| EP4018213A4 (de) | Tmr-sensor mit magnetischen tunnelübergängen mit formanisotropie | |
| WO2012161753A3 (en) | Magnetic tunnel junction transistor devices | |
| SG118382A1 (en) | Extraordinary magnetoresistance sensor with perpendicular magnetic biasing by an antiferromagnetic/ferromagnetic exchange-coupled structure |