ATE557397T1 - Magnetelement mt einem wärmeunterstützten schreibverfahren - Google Patents

Magnetelement mt einem wärmeunterstützten schreibverfahren

Info

Publication number
ATE557397T1
ATE557397T1 AT09721466T AT09721466T ATE557397T1 AT E557397 T1 ATE557397 T1 AT E557397T1 AT 09721466 T AT09721466 T AT 09721466T AT 09721466 T AT09721466 T AT 09721466T AT E557397 T1 ATE557397 T1 AT E557397T1
Authority
AT
Austria
Prior art keywords
magnetic
layer
magnetic element
storage
assisted
Prior art date
Application number
AT09721466T
Other languages
English (en)
Inventor
Jean-Pierre Nozieres
Ioan Lucian Prejbeanu
Original Assignee
Crocus Technology Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Crocus Technology Sa filed Critical Crocus Technology Sa
Application granted granted Critical
Publication of ATE557397T1 publication Critical patent/ATE557397T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
  • Recording Or Reproducing By Magnetic Means (AREA)
AT09721466T 2008-03-18 2009-03-17 Magnetelement mt einem wärmeunterstützten schreibverfahren ATE557397T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0851747A FR2929041B1 (fr) 2008-03-18 2008-03-18 Element magnetique a ecriture assistee thermiquement
PCT/EP2009/053111 WO2009115505A1 (fr) 2008-03-18 2009-03-17 Element magnetique a ecriture assistee thermiquement

Publications (1)

Publication Number Publication Date
ATE557397T1 true ATE557397T1 (de) 2012-05-15

Family

ID=39938118

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09721466T ATE557397T1 (de) 2008-03-18 2009-03-17 Magnetelement mt einem wärmeunterstützten schreibverfahren

Country Status (6)

Country Link
US (1) US8228716B2 (de)
EP (1) EP2255362B1 (de)
JP (1) JP2011517502A (de)
AT (1) ATE557397T1 (de)
FR (1) FR2929041B1 (de)
WO (1) WO2009115505A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2325846B1 (de) * 2009-11-12 2015-10-28 Crocus Technology S.A. Speicher mit einer magnetischen Tunnelübergangsanordnung und wärmeunterstütztem Schreibverfahren
EP2447948B1 (de) * 2010-10-26 2014-12-31 Crocus Technology S.A. Thermisch gestütztes magnetisches Direktzugriffspeicherelement mit verbesserter Dauerhaftigkeit
EP2575136B1 (de) * 2011-09-30 2014-12-24 Crocus Technology S.A. Selbstbezogene Magnetdirektzugriffsspeicherzelle mit ferromagnetischen Schichten
US20150129946A1 (en) * 2013-11-13 2015-05-14 International Business Machines Corporation Self reference thermally assisted mram with low moment ferromagnet storage layer
US9524765B2 (en) 2014-08-15 2016-12-20 Qualcomm Incorporated Differential magnetic tunnel junction pair including a sense layer with a high coercivity portion
JP6630035B2 (ja) * 2014-09-18 2020-01-15 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 磁気トンネル接合素子及び磁気ランダムアクセスメモリ
FR3031622B1 (fr) * 2015-01-14 2018-02-16 Centre National De La Recherche Scientifique Point memoire magnetique
US10332576B2 (en) * 2017-06-07 2019-06-25 International Business Machines Corporation Magnetic exchange coupled MTJ free layer with double tunnel barriers having low switching current and high data retention
US10510390B2 (en) * 2017-06-07 2019-12-17 International Business Machines Corporation Magnetic exchange coupled MTJ free layer having low switching current and high data retention
CN112289923B (zh) * 2019-07-25 2023-05-23 上海磁宇信息科技有限公司 磁性随机存储器的磁性隧道结结构
CN112310272B (zh) * 2019-07-25 2023-05-23 上海磁宇信息科技有限公司 磁性随机存储器的磁性隧道结结构
US11552242B2 (en) * 2021-04-08 2023-01-10 Regents Of The University Of Minnesota Weyl semimetal material for magnetic tunnel junction

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DE3820475C1 (de) 1988-06-16 1989-12-21 Kernforschungsanlage Juelich Gmbh, 5170 Juelich, De
US5159513A (en) 1991-02-08 1992-10-27 International Business Machines Corporation Magnetoresistive sensor based on the spin valve effect
US5343422A (en) 1993-02-23 1994-08-30 International Business Machines Corporation Nonvolatile magnetoresistive storage device using spin valve effect
US6021065A (en) 1996-09-06 2000-02-01 Nonvolatile Electronics Incorporated Spin dependent tunneling memory
US5583725A (en) 1994-06-15 1996-12-10 International Business Machines Corporation Spin valve magnetoresistive sensor with self-pinned laminated layer and magnetic recording system using the sensor
US5640343A (en) 1996-03-18 1997-06-17 International Business Machines Corporation Magnetic memory array using magnetic tunnel junction devices in the memory cells
CN1259650C (zh) * 1998-10-12 2006-06-14 富士通株式会社 磁头、硬盘装置和盘阵列装置
JP4896587B2 (ja) * 2000-10-20 2012-03-14 株式会社東芝 磁気抵抗効果素子、磁気ヘッド及び磁気再生装置
JP3807254B2 (ja) * 2001-05-30 2006-08-09 ソニー株式会社 磁気抵抗効果素子、磁気抵抗効果型磁気センサ、および磁気抵抗効果型磁気ヘッド
FR2832542B1 (fr) 2001-11-16 2005-05-06 Commissariat Energie Atomique Dispositif magnetique a jonction tunnel magnetique, memoire et procedes d'ecriture et de lecture utilisant ce dispositif
US6958927B1 (en) * 2002-10-09 2005-10-25 Grandis Inc. Magnetic element utilizing spin-transfer and half-metals and an MRAM device using the magnetic element
US7023723B2 (en) * 2002-11-12 2006-04-04 Nve Corporation Magnetic memory layers thermal pulse transitions
CN101114694A (zh) * 2002-11-26 2008-01-30 株式会社东芝 磁单元和磁存储器
KR100568512B1 (ko) * 2003-09-29 2006-04-07 삼성전자주식회사 열발생층을 갖는 자기열 램셀들 및 이를 구동시키는 방법들
FR2866750B1 (fr) * 2004-02-23 2006-04-21 Centre Nat Rech Scient Memoire magnetique a jonction tunnel magnetique et procede pour son ecriture
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US6980486B1 (en) * 2005-03-21 2005-12-27 The United States Of America As Represented By The Secretary Of The Navy Acquisition system particularly suited for tracking targets having high bearing rates
US7489541B2 (en) * 2005-08-23 2009-02-10 Grandis, Inc. Spin-transfer switching magnetic elements using ferrimagnets and magnetic memories using the magnetic elements

Also Published As

Publication number Publication date
EP2255362A1 (de) 2010-12-01
US8228716B2 (en) 2012-07-24
FR2929041A1 (fr) 2009-09-25
WO2009115505A1 (fr) 2009-09-24
US20100328808A1 (en) 2010-12-30
EP2255362B1 (de) 2012-05-09
FR2929041B1 (fr) 2012-11-30
JP2011517502A (ja) 2011-06-09

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