ATE539379T1 - Extrem-ultraviolett-maske mit verbessertem absorbierer - Google Patents

Extrem-ultraviolett-maske mit verbessertem absorbierer

Info

Publication number
ATE539379T1
ATE539379T1 AT02721056T AT02721056T ATE539379T1 AT E539379 T1 ATE539379 T1 AT E539379T1 AT 02721056 T AT02721056 T AT 02721056T AT 02721056 T AT02721056 T AT 02721056T AT E539379 T1 ATE539379 T1 AT E539379T1
Authority
AT
Austria
Prior art keywords
extreme ultraviolet
improved absorbent
ultraviolet mask
improved
nonmetal
Prior art date
Application number
AT02721056T
Other languages
English (en)
Inventor
Guojing Zhang
Pei-Yang Yan
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Application granted granted Critical
Publication of ATE539379T1 publication Critical patent/ATE539379T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Filters (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
AT02721056T 2001-03-30 2002-02-14 Extrem-ultraviolett-maske mit verbessertem absorbierer ATE539379T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/823,641 US6610447B2 (en) 2001-03-30 2001-03-30 Extreme ultraviolet mask with improved absorber
PCT/US2002/004914 WO2002079875A2 (en) 2001-03-30 2002-02-14 Extreme ultraviolet mask with improved absorber

Publications (1)

Publication Number Publication Date
ATE539379T1 true ATE539379T1 (de) 2012-01-15

Family

ID=25239312

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02721056T ATE539379T1 (de) 2001-03-30 2002-02-14 Extrem-ultraviolett-maske mit verbessertem absorbierer

Country Status (7)

Country Link
US (2) US6610447B2 (de)
EP (1) EP1373978B1 (de)
CN (1) CN100354753C (de)
AT (1) ATE539379T1 (de)
AU (1) AU2002252008A1 (de)
TW (1) TW531783B (de)
WO (1) WO2002079875A2 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030000921A1 (en) * 2001-06-29 2003-01-02 Ted Liang Mask repair with electron beam-induced chemical etching
US6835503B2 (en) * 2002-04-12 2004-12-28 Micron Technology, Inc. Use of a planarizing layer to improve multilayer performance in extreme ultra-violet masks
JP4212025B2 (ja) * 2002-07-04 2009-01-21 Ｈｏｙａ株式会社 反射型マスクブランクス及び反射型マスク並びに反射型マスクの製造方法
US7118832B2 (en) * 2003-01-08 2006-10-10 Intel Corporation Reflective mask with high inspection contrast
US7572556B2 (en) * 2003-09-17 2009-08-11 Carl Zeiss Smt Ag Masks, lithography device and semiconductor component
US7326502B2 (en) * 2003-09-18 2008-02-05 Intel Corporation Multilayer coatings for EUV mask substrates
JP2005321564A (ja) * 2004-05-07 2005-11-17 Canon Inc 多層膜が形成された光学素子の製造方法
FR2876808B1 (fr) * 2004-10-19 2008-09-05 Commissariat Energie Atomique Structure de masque pour lithographie
US20060222961A1 (en) * 2005-03-31 2006-10-05 Pei-Yang Yan Leaky absorber for extreme ultraviolet mask
KR20080017290A (ko) * 2005-05-24 2008-02-26 마쯔시다덴기산교 가부시키가이샤 드라이에칭방법, 미세구조 형성방법, 몰드 및 그 제조방법
JP2007133325A (ja) * 2005-11-14 2007-05-31 Fujinon Sano Kk 反射ミラー及び光ピックアップ
CN101102979A (zh) * 2006-02-13 2008-01-09 松下电器产业株式会社 干蚀刻方法、微细结构形成方法、模板及模板的制造方法
DE102006022352B4 (de) * 2006-05-12 2014-11-20 Qimonda Ag Anordnung zur Projektion eines Musters von einer EUV-Maske auf ein Substrat
ATE526679T1 (de) * 2006-12-27 2011-10-15 Asahi Glass Co Ltd Reflexionsmaskenrohling für euv-lithographie
JP5018789B2 (ja) * 2007-01-31 2012-09-05 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
EP2256789B1 (de) * 2008-03-18 2012-07-04 Asahi Glass Company, Limited Reflexionsmaskenrohling für euv-lithographie
JP5202141B2 (ja) * 2008-07-07 2013-06-05 信越化学工業株式会社 チタニアドープ石英ガラス部材及びその製造方法
KR20110050427A (ko) * 2008-07-14 2011-05-13 아사히 가라스 가부시키가이샤 Ｅｕｖ 리소그래피용 반사형 마스크 블랭크 및 ｅｕｖ 리소그래피용 반사형 마스크
TWI467318B (zh) 2009-12-04 2015-01-01 旭硝子股份有限公司 An optical member for EUV microfilm, and a method for manufacturing a substrate with a reflective layer for EUV microfilm
TWI464529B (zh) 2009-12-09 2014-12-11 旭硝子股份有限公司 EUV microfilm with anti-reflective substrate, EUV microsurgical reflective mask substrate, EUV microsurgical reflective mask and manufacturing method of the reflective substrate
WO2011071086A1 (ja) 2009-12-09 2011-06-16 旭硝子株式会社 Ｅｕｖリソグラフィ用光学部材
US20140272684A1 (en) 2013-03-12 2014-09-18 Applied Materials, Inc. Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor
US9354508B2 (en) 2013-03-12 2016-05-31 Applied Materials, Inc. Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
US9417515B2 (en) * 2013-03-14 2016-08-16 Applied Materials, Inc. Ultra-smooth layer ultraviolet lithography mirrors and blanks, and manufacturing and lithography systems therefor
US9285673B2 (en) * 2014-07-10 2016-03-15 Taiwan Semiconductor Manufacturing Company, Ltd. Assist feature for a photolithographic process
US9791771B2 (en) * 2016-02-11 2017-10-17 Globalfoundries Inc. Photomask structure with an etch stop layer that enables repairs of detected defects therein and extreme ultraviolet(EUV) photolithograpy methods using the photomask structure
WO2020176181A1 (en) * 2019-02-25 2020-09-03 Applied Materials, Inc. A film stack for lithography applications
DE102020213307A1 (de) 2020-10-21 2022-04-21 Asml Netherlands B.V. Binäre Intensitätsmaske für den EUV-Spektralbereich

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS64785A (en) * 1986-07-29 1989-01-05 Ricoh Co Ltd Manufacture of mask semiconductor laser
US5196283A (en) * 1989-03-09 1993-03-23 Canon Kabushiki Kaisha X-ray mask structure, and x-ray exposure process
JPH05134385A (ja) * 1991-11-11 1993-05-28 Nikon Corp 反射マスク
JP3078163B2 (ja) 1993-10-15 2000-08-21 キヤノン株式会社 リソグラフィ用反射型マスクおよび縮小投影露光装置
US5500312A (en) 1994-10-11 1996-03-19 At&T Corp. Masks with low stress multilayer films and a process for controlling the stress of multilayer films
JPH08213303A (ja) 1995-02-03 1996-08-20 Nikon Corp 反射型ｘ線マスク及びその製造法
US5958629A (en) * 1997-12-22 1999-09-28 Intel Corporation Using thin films as etch stop in EUV mask fabrication process
US5939227A (en) * 1998-03-09 1999-08-17 Rochester Institute Of Technology Multi-layered attenuated phase shift mask and a method for making the mask
US6366639B1 (en) * 1998-06-23 2002-04-02 Kabushiki Kaisha Toshiba X-ray mask, method of manufacturing the same, and X-ray exposure method
US6355381B1 (en) * 1998-09-25 2002-03-12 Intel Corporation Method to fabricate extreme ultraviolet lithography masks

Also Published As

Publication number Publication date
EP1373978B1 (de) 2011-12-28
WO2002079875A3 (en) 2002-12-05
EP1373978A2 (de) 2004-01-02
US6610447B2 (en) 2003-08-26
TW531783B (en) 2003-05-11
US6908714B2 (en) 2005-06-21
US20030228530A1 (en) 2003-12-11
AU2002252008A1 (en) 2002-10-15
US20020142230A1 (en) 2002-10-03
WO2002079875A2 (en) 2002-10-10
CN100354753C (zh) 2007-12-12
CN1500230A (zh) 2004-05-26

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