ATE526679T1 - Reflexionsmaskenrohling für euv-lithographie - Google Patents

Reflexionsmaskenrohling für euv-lithographie

Info

Publication number
ATE526679T1
ATE526679T1 AT07860104T AT07860104T ATE526679T1 AT E526679 T1 ATE526679 T1 AT E526679T1 AT 07860104 T AT07860104 T AT 07860104T AT 07860104 T AT07860104 T AT 07860104T AT E526679 T1 ATE526679 T1 AT E526679T1
Authority
AT
Austria
Prior art keywords
mask blank
euv lithography
absorber layer
euv
reflection mask
Prior art date
Application number
AT07860104T
Other languages
English (en)
Inventor
Kazuyuki Hayashi
Kazuo Kadowaki
Takashi Sugiyama
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Application granted granted Critical
Publication of ATE526679T1 publication Critical patent/ATE526679T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
AT07860104T 2006-12-27 2007-12-25 Reflexionsmaskenrohling für euv-lithographie ATE526679T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006350932 2006-12-27
PCT/JP2007/074875 WO2008084680A1 (ja) 2006-12-27 2007-12-25 Ｅｕｖリソグラフィ用反射型マスクブランク

Publications (1)

Publication Number Publication Date
ATE526679T1 true ATE526679T1 (de) 2011-10-15

Family

ID=39608576

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07860104T ATE526679T1 (de) 2006-12-27 2007-12-25 Reflexionsmaskenrohling für euv-lithographie

Country Status (6)

Country Link
US (1) US7713666B2 (de)
EP (1) EP1973147B1 (de)
JP (1) JP5018787B2 (de)
AT (1) ATE526679T1 (de)
TW (1) TWI418926B (de)
WO (1) WO2008084680A1 (de)

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TWI444757B (zh) * 2006-04-21 2014-07-11 旭硝子股份有限公司 用於極紫外光（ｅｕｖ）微影術之反射性空白光罩
ATE526679T1 (de) * 2006-12-27 2011-10-15 Asahi Glass Co Ltd Reflexionsmaskenrohling für euv-lithographie
JP5018789B2 (ja) * 2007-01-31 2012-09-05 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
JP5040996B2 (ja) * 2007-04-17 2012-10-03 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
JP4998082B2 (ja) * 2007-05-17 2012-08-15 凸版印刷株式会社 反射型フォトマスクブランク及びその製造方法、反射型フォトマスク、並びに、半導体装置の製造方法
ES2351237T3 (es) * 2007-09-17 2011-02-01 The Tapemark Company Envase de distribucion con aplicador.
JP2009210802A (ja) * 2008-03-04 2009-09-17 Asahi Glass Co Ltd Ｅｕｖリソグラフィ用反射型マスクブランク
EP2256789B1 (de) 2008-03-18 2012-07-04 Asahi Glass Company, Limited Reflexionsmaskenrohling für euv-lithographie
JP5067483B2 (ja) * 2008-06-19 2012-11-07 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
KR20110050427A (ko) * 2008-07-14 2011-05-13 아사히 가라스 가부시키가이샤 Ｅｕｖ 리소그래피용 반사형 마스크 블랭크 및 ｅｕｖ 리소그래피용 반사형 마스크
CN102203907B (zh) * 2008-10-30 2014-03-26 旭硝子株式会社 Euv光刻用反射型掩模基板
JP5348141B2 (ja) * 2008-10-30 2013-11-20 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
JP4839411B2 (ja) * 2009-02-13 2011-12-21 Ｈｏｙａ株式会社 マスクブランク用基板、マスクブランクおよびフォトマスク
JP5507876B2 (ja) 2009-04-15 2014-05-28 Ｈｏｙａ株式会社 反射型マスクブランク及び反射型マスクの製造方法
KR101699995B1 (ko) * 2009-06-18 2017-01-26 호야 가부시키가이샤 마스크 블랭크 및 전사용 마스크와 전사용 마스크의 제조 방법
KR101076886B1 (ko) * 2009-06-22 2011-10-25 주식회사 하이닉스반도체 극자외선 리소그래피를 위한 마스크 및 이를 이용한 노광방법
WO2011004850A1 (ja) 2009-07-08 2011-01-13 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
JP5333016B2 (ja) * 2009-07-31 2013-11-06 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
KR20130007537A (ko) 2010-03-02 2013-01-18 아사히 가라스 가부시키가이샤 Ｅｕｖ 리소그래피용 반사형 마스크 블랭크 및 그 제조 방법
WO2012026463A1 (ja) 2010-08-24 2012-03-01 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
WO2012105508A1 (ja) 2011-02-01 2012-08-09 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
CN103858210B (zh) * 2011-09-28 2016-07-06 凸版印刷株式会社 反射型掩模坯、反射型掩模及它们的制造方法
JP6060636B2 (ja) 2012-01-30 2017-01-18 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、および、ｅｕｖリソグラフィ用反射型マスク
US9612521B2 (en) * 2013-03-12 2017-04-04 Applied Materials, Inc. Amorphous layer extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
JP6287099B2 (ja) 2013-05-31 2018-03-07 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
JP6339807B2 (ja) * 2014-01-16 2018-06-06 株式会社ニューフレアテクノロジー 露光用マスクの製造方法、露光用マスクの製造システム、及び半導体装置の製造方法
JP6323873B2 (ja) * 2014-08-13 2018-05-16 国立研究開発法人産業技術総合研究所 軟ｘ線を用いた二次電池オペランド測定用電極
US11815804B2 (en) * 2021-04-22 2023-11-14 Taiwan Semiconductor Manufacturing Co., Ltd. EUV mask blank and method of making EUV mask blank

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ATE526679T1 (de) * 2006-12-27 2011-10-15 Asahi Glass Co Ltd Reflexionsmaskenrohling für euv-lithographie
JP5018789B2 (ja) * 2007-01-31 2012-09-05 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク

Also Published As

Publication number Publication date
EP1973147B1 (de) 2011-09-28
JPWO2008084680A1 (ja) 2010-04-30
US7713666B2 (en) 2010-05-11
TW200844650A (en) 2008-11-16
WO2008084680A1 (ja) 2008-07-17
EP1973147A4 (de) 2009-10-28
US20080199787A1 (en) 2008-08-21
JP5018787B2 (ja) 2012-09-05
EP1973147A1 (de) 2008-09-24
TWI418926B (zh) 2013-12-11

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Legal Events

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