ATE540093T1 - Zusammensetzung für das chemisch-mechanische polieren und verwendung - Google Patents

Zusammensetzung für das chemisch-mechanische polieren und verwendung

Info

Publication number
ATE540093T1
ATE540093T1 AT05725517T AT05725517T ATE540093T1 AT E540093 T1 ATE540093 T1 AT E540093T1 AT 05725517 T AT05725517 T AT 05725517T AT 05725517 T AT05725517 T AT 05725517T AT E540093 T1 ATE540093 T1 AT E540093T1
Authority
AT
Austria
Prior art keywords
alumina
chemical
mechanical polishing
mixtures
composition
Prior art date
Application number
AT05725517T
Other languages
English (en)
Inventor
Rege Thesauro F De
K Moeggenborg
V Brusic
B Bayer
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Application granted granted Critical
Publication of ATE540093T1 publication Critical patent/ATE540093T1/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01FCOMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F7/00Compounds of aluminium
    • C01F7/02Aluminium oxide; Aluminium hydroxide; Aluminates
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40Chemomechanical polishing [CMP]
    • H10P52/402Chemomechanical polishing [CMP] of semiconductor materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
AT05725517T 2004-03-24 2005-03-14 Zusammensetzung für das chemisch-mechanische polieren und verwendung ATE540093T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/807,944 US20050211950A1 (en) 2004-03-24 2004-03-24 Chemical-mechanical polishing composition and method for using the same
PCT/US2005/008411 WO2005100496A2 (en) 2004-03-24 2005-03-14 Chemical-mechanical polishing composition and method for using the same

Publications (1)

Publication Number Publication Date
ATE540093T1 true ATE540093T1 (de) 2012-01-15

Family

ID=34962673

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05725517T ATE540093T1 (de) 2004-03-24 2005-03-14 Zusammensetzung für das chemisch-mechanische polieren und verwendung

Country Status (11)

Country Link
US (2) US20050211950A1 (de)
EP (1) EP1730246B1 (de)
JP (2) JP2007531274A (de)
KR (1) KR101082154B1 (de)
CN (1) CN1938392B (de)
AT (1) ATE540093T1 (de)
IL (2) IL176669A0 (de)
MY (1) MY146598A (de)
SG (1) SG150494A1 (de)
TW (1) TWI299747B (de)
WO (1) WO2005100496A2 (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7247567B2 (en) * 2004-06-16 2007-07-24 Cabot Microelectronics Corporation Method of polishing a tungsten-containing substrate
JP4814502B2 (ja) * 2004-09-09 2011-11-16 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
US20060108325A1 (en) * 2004-11-19 2006-05-25 Everson William J Polishing process for producing damage free surfaces on semi-insulating silicon carbide wafers
US7955519B2 (en) * 2005-09-30 2011-06-07 Cabot Microelectronics Corporation Composition and method for planarizing surfaces
US7998866B2 (en) * 2006-09-05 2011-08-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
US20080105652A1 (en) * 2006-11-02 2008-05-08 Cabot Microelectronics Corporation CMP of copper/ruthenium/tantalum substrates
EP2152826B1 (de) 2007-05-24 2013-07-17 Basf Se Zusammensetzung mit metallorganischen gerüstmaterialien für chemisch-mechanisches polieren
US8425797B2 (en) * 2008-03-21 2013-04-23 Cabot Microelectronics Corporation Compositions for polishing aluminum/copper and titanium in damascene structures
KR101273705B1 (ko) * 2008-08-06 2013-06-12 히타치가세이가부시끼가이샤 Cmp 연마액 및 이 cmp 연마액을 사용한 기판의 연마 방법
KR101492969B1 (ko) * 2008-11-14 2015-02-16 일진다이아몬드(주) 고경도 피복 분말 및 그 제조 방법
WO2011007588A1 (ja) * 2009-07-16 2011-01-20 日立化成工業株式会社 パラジウム研磨用cmp研磨液及び研磨方法
JP5533889B2 (ja) * 2010-02-15 2014-06-25 日立化成株式会社 Cmp研磨液及び研磨方法
CN102212334B (zh) * 2011-04-19 2013-06-26 浙江露笑光电有限公司 蓝宝石衬底片粗磨研磨液及其配制方法
CN102699811B (zh) * 2012-05-29 2015-07-29 上海瑞钼特金属新材料有限公司 表面高光洁度的难熔金属合金箔片零件及其制备方法
US9011207B2 (en) 2012-10-29 2015-04-21 Wayne O. Duescher Flexible diaphragm combination floating and rigid abrading workholder
US8998677B2 (en) 2012-10-29 2015-04-07 Wayne O. Duescher Bellows driven floatation-type abrading workholder
US9604339B2 (en) 2012-10-29 2017-03-28 Wayne O. Duescher Vacuum-grooved membrane wafer polishing workholder
US9233452B2 (en) 2012-10-29 2016-01-12 Wayne O. Duescher Vacuum-grooved membrane abrasive polishing wafer workholder
US8998678B2 (en) 2012-10-29 2015-04-07 Wayne O. Duescher Spider arm driven flexible chamber abrading workholder
US9039488B2 (en) 2012-10-29 2015-05-26 Wayne O. Duescher Pin driven flexible chamber abrading workholder
US8845394B2 (en) 2012-10-29 2014-09-30 Wayne O. Duescher Bellows driven air floatation abrading workholder
US9199354B2 (en) 2012-10-29 2015-12-01 Wayne O. Duescher Flexible diaphragm post-type floating and rigid abrading workholder
US8920667B2 (en) * 2013-01-30 2014-12-30 Cabot Microelectronics Corporation Chemical-mechanical polishing composition containing zirconia and metal oxidizer
CN103254799A (zh) * 2013-05-29 2013-08-21 陈玉祥 一种亲水金刚石悬浮研磨抛光液及其制备方法
US9434859B2 (en) * 2013-09-24 2016-09-06 Cabot Microelectronics Corporation Chemical-mechanical planarization of polymer films
WO2015057433A1 (en) 2013-10-18 2015-04-23 Cabot Microelectronics Corporation Polishing composition and method for nickel-phosphorous coated memory disks
CN104592935B (zh) * 2015-01-04 2016-04-27 江苏中晶科技有限公司 硬质材料研磨用加速剂
US10926378B2 (en) 2017-07-08 2021-02-23 Wayne O. Duescher Abrasive coated disk islands using magnetic font sheet
US11286403B2 (en) 2018-07-20 2022-03-29 Dongjin Semichem Co., Ltd Chemical mechanical polishing composition, chemical mechanical polishing slurry and method for polishing substrate
CN113383047A (zh) * 2018-12-10 2021-09-10 Cmc材料股份有限公司 用于钌化学机械抛光的不含氧化剂的浆料
US11691241B1 (en) * 2019-08-05 2023-07-04 Keltech Engineering, Inc. Abrasive lapping head with floating and rigid workpiece carrier
CN111421391A (zh) * 2020-03-09 2020-07-17 大连理工大学 一种单晶金刚石晶片的双面化学机械抛光方法
CN115926748B (zh) * 2022-12-21 2024-07-12 广东红日星实业有限公司 一种研磨液及其制备方法和应用
CN116276326A (zh) * 2023-01-16 2023-06-23 成都先进金属材料产业技术研究院股份有限公司 一种去除纯钛及钛合金制品表面氧化皮的方法

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01257563A (ja) * 1988-04-08 1989-10-13 Showa Denko Kk アルミニウム磁気ディスク研磨用組成物
US4959113C1 (en) * 1989-07-31 2001-03-13 Rodel Inc Method and composition for polishing metal surfaces
US5693239A (en) * 1995-10-10 1997-12-02 Rodel, Inc. Polishing slurries comprising two abrasive components and methods for their use
US6110396A (en) * 1996-11-27 2000-08-29 International Business Machines Corporation Dual-valent rare earth additives to polishing slurries
US20030077221A1 (en) * 2001-10-01 2003-04-24 Shivkumar Chiruvolu Aluminum oxide powders
US6099604A (en) * 1997-08-21 2000-08-08 Micron Technology, Inc. Slurry with chelating agent for chemical-mechanical polishing of a semiconductor wafer and methods related thereto
JPH1180708A (ja) * 1997-09-09 1999-03-26 Fujimi Inkooporeetetsudo:Kk 研磨用組成物
US6432828B2 (en) * 1998-03-18 2002-08-13 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US5972124A (en) 1998-08-31 1999-10-26 Advanced Micro Devices, Inc. Method for cleaning a surface of a dielectric material
JP2000212776A (ja) * 1999-01-18 2000-08-02 Jsr Corp 化学機械研磨用水系分散体
US6443812B1 (en) * 1999-08-24 2002-09-03 Rodel Holdings Inc. Compositions for insulator and metal CMP and methods relating thereto
EP1252247A1 (de) * 1999-12-14 2002-10-30 Rodel Holdings, Inc. Polierzusammensetzungen für halbleitersubstrate
US20020039839A1 (en) * 1999-12-14 2002-04-04 Thomas Terence M. Polishing compositions for noble metals
US20030006396A1 (en) * 1999-12-14 2003-01-09 Hongyu Wang Polishing composition for CMP having abrasive particles
JP2001187876A (ja) * 1999-12-28 2001-07-10 Nec Corp 化学的機械的研磨用スラリー
JP2001210640A (ja) * 2000-01-27 2001-08-03 Inst Of Physical & Chemical Res 半導体の保護膜の形成方法
JP2001308042A (ja) * 2000-04-26 2001-11-02 Okamoto Machine Tool Works Ltd 基板用研磨剤スラリ−
US6468913B1 (en) * 2000-07-08 2002-10-22 Arch Specialty Chemicals, Inc. Ready-to-use stable chemical-mechanical polishing slurries
DE10048477B4 (de) * 2000-09-29 2008-07-03 Qimonda Ag Verfahren zum chemisch-mechanischen Polieren von Schichten aus Metallen der Platingruppe
US6649523B2 (en) * 2000-09-29 2003-11-18 Nutool, Inc. Method and system to provide material removal and planarization employing a reactive pad
JP4153657B2 (ja) * 2000-11-21 2008-09-24 富士フイルム株式会社 磁気記録媒体
EP1211024A3 (de) * 2000-11-30 2004-01-02 JSR Corporation Polierverfahren
CN1255854C (zh) * 2001-01-16 2006-05-10 卡伯特微电子公司 含有草酸铵的抛光系统及方法
JP2002231666A (ja) * 2001-01-31 2002-08-16 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
US6812193B2 (en) * 2001-08-31 2004-11-02 International Business Machines Corporation Slurry for mechanical polishing (CMP) of metals and use thereof
US6884723B2 (en) * 2001-12-21 2005-04-26 Micron Technology, Inc. Methods for planarization of group VIII metal-containing surfaces using complexing agents
US6730592B2 (en) * 2001-12-21 2004-05-04 Micron Technology, Inc. Methods for planarization of metal-containing surfaces using halogens and halide salts
US20030162398A1 (en) * 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
KR20040000009A (ko) * 2002-06-19 2004-01-03 주식회사 하이닉스반도체 플라티늄-cmp용 용액
US20040029494A1 (en) * 2002-08-09 2004-02-12 Souvik Banerjee Post-CMP cleaning of semiconductor wafer surfaces using a combination of aqueous and CO2 based cryogenic cleaning techniques
US7968465B2 (en) * 2003-08-14 2011-06-28 Dupont Air Products Nanomaterials Llc Periodic acid compositions for polishing ruthenium/low K substrates

Also Published As

Publication number Publication date
SG150494A1 (en) 2009-03-30
JP5781906B2 (ja) 2015-09-24
US20090152240A1 (en) 2009-06-18
CN1938392A (zh) 2007-03-28
IL219496A (en) 2013-04-30
MY146598A (en) 2012-08-30
WO2005100496A2 (en) 2005-10-27
EP1730246A2 (de) 2006-12-13
CN1938392B (zh) 2010-09-01
US20050211950A1 (en) 2005-09-29
US8101093B2 (en) 2012-01-24
IL219496A0 (en) 2012-06-28
JP2007531274A (ja) 2007-11-01
TW200540240A (en) 2005-12-16
JP2012049570A (ja) 2012-03-08
KR20060134996A (ko) 2006-12-28
IL176669A0 (en) 2006-10-31
EP1730246B1 (de) 2012-01-04
WO2005100496A3 (en) 2005-12-29
KR101082154B1 (ko) 2011-11-09
TWI299747B (en) 2008-08-11

Similar Documents

Publication Publication Date Title
ATE540093T1 (de) Zusammensetzung für das chemisch-mechanische polieren und verwendung
JP2007531274A5 (de)
TW200705376A (en) Diamond conditioning of soft chemical mechanical planarization/polishing (CMP) polishing pads
WO2003104343A3 (en) Method for chemical mechanical polishing (cmp) of low-k dielectric materials
TW200732460A (en) Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
MY160422A (en) Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
TW200714696A (en) High throughput chemical mechanical polishing composition for metal film planarization
DE602004027901D1 (de) Belegte metalloxidteilchen für cmp
WO2004076574A3 (en) Cmp composition comprising a sulfonic acid and a method for polishing noble metals
TW200710978A (en) Methods and compositions for electro-chemical-mechanical polishing
KR960021397A (ko) 연마체
WO2005012592A3 (en) Cvd diamond-coated composite substrate for making same
MX2009009844A (es) Articulo abrasivo ligado y metodo de fabricacion.
RU2006143594A (ru) Вставка для режущего инструмента
EP1590336A4 (de) Substituierte pyrazole, zusammensetzungen,die solche verbindungen enthalten, und anwendungsverfahren
MY156687A (en) Cmp compositions and method for suppressing polysilicon removal rates
TW200511422A (en) Treatment or processing of substrate surfaces
TWI268199B (en) Polishing system comprising a highly branched polymer
WO2006044417A3 (en) Cmp composition with a polymer additive for polishing noble metals
WO2007111813A3 (en) Iodate-containing chemical-mechanical polishing compositions and methods
AU2003242942A1 (en) Polishing composition containing conducting polymer
DE60300171D1 (de) Schleifstein für Feinstbearbeitung
TW200605211A (en) CMP composition for improved oxide removal rate
ATE404580T1 (de) Sulfonylamino-peptidomimetika, die auf die somatostatinrezeptor-subtypen 4 (sstr4) und 1 (sstr1) wirken
TW200724625A (en) A new type of copper CMP slurry