ATE541342T1 - Sättigbarer halbleiter-absorber-reflektor und verfahren zu seiner herstellung - Google Patents

Sättigbarer halbleiter-absorber-reflektor und verfahren zu seiner herstellung

Info

Publication number
ATE541342T1
ATE541342T1 AT05717351T AT05717351T ATE541342T1 AT E541342 T1 ATE541342 T1 AT E541342T1 AT 05717351 T AT05717351 T AT 05717351T AT 05717351 T AT05717351 T AT 05717351T AT E541342 T1 ATE541342 T1 AT E541342T1
Authority
AT
Austria
Prior art keywords
absorption
lattice
layer
recovery time
producing same
Prior art date
Application number
AT05717351T
Other languages
English (en)
Inventor
Oleg Okhotnikov
Mircea Guina
Anatoly Grudinin
Original Assignee
Reflekron Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Reflekron Oy filed Critical Reflekron Oy
Application granted granted Critical
Publication of ATE541342T1 publication Critical patent/ATE541342T1/de

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/3523—Non-linear absorption changing by light, e.g. bleaching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1106—Mode locking
    • H01S3/1112—Passive mode locking
    • H01S3/1115—Passive mode locking using intracavity saturable absorbers
    • H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1123—Q-switching
    • H01S3/113—Q-switching using intracavity saturable absorbers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/34—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 reflector
    • G02F2201/346—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 reflector distributed (Bragg) reflector
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/101—Ga×As and alloy
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/102—In×P and alloy
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/108—Materials and properties semiconductor quantum wells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08059—Constructional details of the reflector, e.g. shape

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Lasers (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
AT05717351T 2005-04-06 2005-04-06 Sättigbarer halbleiter-absorber-reflektor und verfahren zu seiner herstellung ATE541342T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/FI2005/050111 WO2006106170A1 (en) 2005-04-06 2005-04-06 Semiconductor saturable absorber reflector and method to fabricate thereof

Publications (1)

Publication Number Publication Date
ATE541342T1 true ATE541342T1 (de) 2012-01-15

Family

ID=37073113

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05717351T ATE541342T1 (de) 2005-04-06 2005-04-06 Sättigbarer halbleiter-absorber-reflektor und verfahren zu seiner herstellung

Country Status (4)

Country Link
US (1) US8179943B2 (de)
EP (1) EP1867013B1 (de)
AT (1) ATE541342T1 (de)
WO (1) WO2006106170A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009290161A (ja) 2008-06-02 2009-12-10 Mitsubishi Electric Corp 光半導体装置
WO2011022730A1 (en) 2009-08-21 2011-02-24 The Regents Of The University Of California Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations
JP2013502731A (ja) * 2009-08-21 2013-01-24 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア ミスフィット転位を有する部分的または完全に弛緩したＡｌＩｎＧａＮ層による半極性窒化物量子井戸の異方性ひずみ制御
JP5444994B2 (ja) * 2009-09-25 2014-03-19 三菱電機株式会社 半導体受光素子
WO2014100702A2 (en) * 2012-12-19 2014-06-26 Georgia Tech Research Corporation Devices, systems and methods for ultrafast optical applications
US9658510B2 (en) * 2012-12-19 2017-05-23 Georgia Tech Research Corporation Devices, systems and methods for ultrafast optical applications
FR3016743B1 (fr) * 2014-01-20 2016-03-04 Centre Nat Rech Scient Procede de fabrication de miroirs a absorbant saturable semiconducteur
CN104218443A (zh) * 2014-08-20 2014-12-17 鲍小志 基于二维层状材料的实用化可饱和吸收器件及其制备方法
CN108011287A (zh) * 2016-10-31 2018-05-08 中国科学院苏州纳米技术与纳米仿生研究所 一种复合结构的可饱和吸收镜
CN112968346B (zh) * 2021-02-03 2023-07-11 西北工业大学 一种高损伤阈值薄膜可饱和吸收体器件、制备方法及应用
CN116316032B (zh) * 2023-05-23 2023-08-15 青岛翼晨镭硕科技有限公司 掺杂型的半导体可饱和吸收镜、其制备方法以及激光器

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4860296A (en) 1983-12-30 1989-08-22 American Telephone And Telegraph Company, At&T Bell Laboratories Laser controlled by a multiple-layer heterostructure
US5627854A (en) 1995-03-15 1997-05-06 Lucent Technologies Inc. Saturable bragg reflector
US5701327A (en) 1996-04-30 1997-12-23 Lucent Technologies Inc. Saturable Bragg reflector structure and process for fabricating the same
US6252892B1 (en) * 1998-09-08 2001-06-26 Imra America, Inc. Resonant fabry-perot semiconductor saturable absorbers and two photon absorption power limiters
US7088756B2 (en) * 2003-07-25 2006-08-08 Imra America, Inc. Polarization maintaining dispersion controlled fiber laser source of ultrashort pulses
US6559471B2 (en) * 2000-12-08 2003-05-06 Motorola, Inc. Quantum well infrared photodetector and method for fabricating same
US6538298B1 (en) * 2001-12-10 2003-03-25 Gigatera Ag Semiconductor saturable absorber mirror
US6826219B2 (en) * 2002-03-14 2004-11-30 Gigatera Ag Semiconductor saturable absorber device, and laser

Also Published As

Publication number Publication date
US20090296767A1 (en) 2009-12-03
EP1867013B1 (de) 2012-01-11
WO2006106170A1 (en) 2006-10-12
US8179943B2 (en) 2012-05-15
EP1867013A1 (de) 2007-12-19

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