ATE541896T1 - Silikonharzzusammensetzung für optische halbleiterbauelemente und optisches halbleiterbauelement - Google Patents

Silikonharzzusammensetzung für optische halbleiterbauelemente und optisches halbleiterbauelement

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Publication number
ATE541896T1
ATE541896T1 AT10160782T AT10160782T ATE541896T1 AT E541896 T1 ATE541896 T1 AT E541896T1 AT 10160782 T AT10160782 T AT 10160782T AT 10160782 T AT10160782 T AT 10160782T AT E541896 T1 ATE541896 T1 AT E541896T1
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resin composition
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AT10160782T
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English (en)
Inventor
Yusuke Taguchi
Kenji Hagiwara
Junichi Sawada
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Shinetsu Chemical Co
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Publication of ATE541896T1 publication Critical patent/ATE541896T1/de

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • H10W74/476—Organic materials comprising silicon
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C08G77/16—Polysiloxanes containing silicon bound to oxygen-containing groups to hydroxy groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C08G77/18—Polysiloxanes containing silicon bound to oxygen-containing groups to alkoxy or aryloxy groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/70—Siloxanes defined by use of the MDTQ nomenclature
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2205/00—Polymer mixtures characterised by other features
    • C08L2205/03—Polymer mixtures characterised by other features containing three or more polymers in a blend
    • C08L2205/035—Polymer mixtures characterised by other features containing three or more polymers in a blend containing four or more polymers in a blend
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/321—Structures or relative sizes of die-attach connectors
    • H10W72/325—Die-attach connectors having a filler embedded in a matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Led Device Packages (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Silicon Polymers (AREA)
  • Epoxy Resins (AREA)
AT10160782T 2009-04-24 2010-04-22 Silikonharzzusammensetzung für optische halbleiterbauelemente und optisches halbleiterbauelement ATE541896T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009107101A JP5108825B2 (ja) 2009-04-24 2009-04-24 光半導体装置用シリコーン樹脂組成物及び光半導体装置

Publications (1)

Publication Number Publication Date
ATE541896T1 true ATE541896T1 (de) 2012-02-15

Family

ID=42289380

Family Applications (1)

Application Number Title Priority Date Filing Date
AT10160782T ATE541896T1 (de) 2009-04-24 2010-04-22 Silikonharzzusammensetzung für optische halbleiterbauelemente und optisches halbleiterbauelement

Country Status (7)

Country Link
US (1) US8193269B2 (de)
EP (1) EP2253671B1 (de)
JP (1) JP5108825B2 (de)
KR (1) KR101520510B1 (de)
CN (1) CN101870817B (de)
AT (1) ATE541896T1 (de)
TW (1) TWI393747B (de)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010106243A (ja) * 2008-09-30 2010-05-13 Shin-Etsu Chemical Co Ltd 光半導体装置用シリコーン樹脂組成物
JP4964928B2 (ja) * 2009-09-15 2012-07-04 信越化学工業株式会社 アンダーフィル材組成物及び光半導体装置
JP5545246B2 (ja) * 2010-03-30 2014-07-09 信越化学工業株式会社 樹脂組成物及び発光半導体素子用リフレクター、及び発光半導体装置
JP2012057000A (ja) * 2010-09-07 2012-03-22 Shin-Etsu Chemical Co Ltd シリコーン樹脂組成物、半導体装置の封止材、及び半導体装置
US9045668B2 (en) * 2010-09-22 2015-06-02 Dow Corning Corporation Organosiloxane block copolymer
CN103190008B (zh) * 2010-11-02 2016-07-06 大日本印刷株式会社 Led元件搭载用引线框、附有树脂引线框、半导体装置的制造方法及半导体元件搭载用引线框
WO2012117822A1 (ja) * 2011-02-28 2012-09-07 横浜ゴム株式会社 加熱硬化性光半導体封止用シリコーン樹脂組成物およびこれを用いる光半導体パッケージ
TW201238406A (en) * 2011-03-11 2012-09-16 Ind Tech Res Inst Light emitting devices
KR20120139594A (ko) * 2011-06-16 2012-12-27 닛토덴코 가부시키가이샤 실리콘 수지 조성물, 봉지층, 리플렉터 및 광반도체 장치
JP2013001824A (ja) * 2011-06-17 2013-01-07 Mitsubishi Chemicals Corp 半導体発光装置用シリコーン樹脂組成物
US8987358B2 (en) * 2011-07-04 2015-03-24 Jnc Corporation Compound including organopolysiloxane or silsesquioxane skeleton having isocyanuric skeleton, epoxy group and SiH group, thermosetting resin composition containing the compound as adhesion-imparting agent, hardened material and sealing agent for optical semiconductor
WO2013008842A1 (ja) * 2011-07-14 2013-01-17 積水化学工業株式会社 光半導体装置用封止剤及び光半導体装置
JP5640957B2 (ja) * 2011-11-21 2014-12-17 信越化学工業株式会社 Ｌｅｄリフレクターとして有用な白色熱硬化性シリコーン樹脂組成物及び該組成物を用いた光半導体装置
JP5556794B2 (ja) * 2011-11-21 2014-07-23 信越化学工業株式会社 Ｌｅｄリフレクターとして有用な白色熱硬化性シリコーン樹脂組成物及び該組成物を用いた光半導体装置
JPWO2013099193A1 (ja) * 2011-12-26 2015-04-30 コニカミノルタ株式会社 Ｌｅｄ装置用封止剤、ｌｅｄ装置、及びｌｅｄ装置の製造方法
JP2013133429A (ja) * 2011-12-27 2013-07-08 Kaneka Corp 表面実装型発光装置用樹脂成形体およびそれを用いた発光装置
JP2013159670A (ja) * 2012-02-02 2013-08-19 Dow Corning Toray Co Ltd 硬化性シリコーン組成物、その硬化物、および光半導体装置
KR20140130161A (ko) * 2012-02-10 2014-11-07 미쓰비시 쥬시 가부시끼가이샤 커버레이 필름, 발광 소자 탑재용 기판, 및 광원 장치
WO2013130574A1 (en) 2012-02-29 2013-09-06 Dow Corning Corporation Compositions of resin-linear organosiloxane block copolymers
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WO2013142140A1 (en) 2012-03-21 2013-09-26 Dow Corning Corporation Process for preparing resin- linear organosiloxane block copolymers
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WO2014152522A1 (en) 2013-03-15 2014-09-25 Dow Corning Corporation Compositions of resin-linear organosiloxane block copolymers
WO2014197617A1 (en) 2013-06-05 2014-12-11 Dow Corning Corporation Compositions of resin-linear organosiloxane block copolymers
KR20160030527A (ko) * 2013-07-11 2016-03-18 스미또모 베이크라이트 가부시키가이샤 반도체 장치의 제조 방법 및 반도체 장치
JP6311319B2 (ja) * 2014-01-14 2018-04-18 大日本印刷株式会社 樹脂組成物、リフレクター、リフレクター付きリードフレーム、及び半導体発光装置
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KR102256994B1 (ko) * 2016-01-15 2021-05-27 아라까와 가가꾸 고교 가부시끼가이샤 축합반응형 다이본딩제, led 발광장치 및 그 제조방법
CN106928510A (zh) * 2017-02-23 2017-07-07 苏州纳贝通环境科技有限公司 一种耐油耐热橡胶材料及其制备方法
US11923483B2 (en) 2018-05-18 2024-03-05 Ddp Specialty Electronic Materials Us, Llc Method for producing LED by one step film lamination
CN109762167A (zh) * 2018-12-14 2019-05-17 中国科学院深圳先进技术研究院 一种led小尺寸芯片用导热绝缘固晶材料及其制备方法
US12044962B2 (en) * 2019-04-19 2024-07-23 Canon Kabushiki Kaisha Forming apparatus, forming method, and article manufacturing method
DE102021116584A1 (de) 2021-06-28 2022-12-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Licht emittierendes bauelement
JP7793276B2 (ja) * 2022-12-22 2026-01-05 信越化学工業株式会社 フォトカプラ封止剤及びフォトカプラ

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2656336B2 (ja) 1989-01-18 1997-09-24 日東電工株式会社 光半導体装置およびそれに用いる光半導体封止用エポキシ樹脂組成物
JPH073159A (ja) * 1993-06-15 1995-01-06 Shin Etsu Chem Co Ltd 室温硬化性オルガノポリシロキサン組成物
CN1178230A (zh) * 1996-07-30 1998-04-08 日本化药株式会社 半导体封装用环氧树脂液体组合物
JP2005306952A (ja) 2004-04-20 2005-11-04 Japan Epoxy Resin Kk 発光素子封止材用エポキシ樹脂組成物
JP2006265529A (ja) * 2005-02-28 2006-10-05 Shin Etsu Chem Co Ltd 室温硬化性オルガノポリシロキサン組成物
MY143212A (en) * 2005-03-01 2011-03-31 Nitto Denko Corp Photosemiconductor encapsulant of epoxy resin, anhydride and aromatic silicone resin
JP2006291018A (ja) * 2005-04-08 2006-10-26 Shin Etsu Chem Co Ltd Ｌｅｄ素子封止用硬化性樹脂組成物
JP4791083B2 (ja) * 2005-05-30 2011-10-12 信越化学工業株式会社 光関連デバイス封止用樹脂組成物およびその硬化物
JP4646122B2 (ja) * 2005-06-30 2011-03-09 信越化学工業株式会社 剥離フィルム用シリコーン組成物
JP4514058B2 (ja) * 2006-08-30 2010-07-28 信越化学工業株式会社 熱伝導性シリコーン組成物及びその硬化物
JP5176144B2 (ja) 2007-08-22 2013-04-03 日立化成株式会社 熱硬化性光反射用樹脂組成物、これを用いた光半導体搭載用基板及びその製造方法、並びに光半導体装置
JP2009107101A (ja) 2007-11-01 2009-05-21 Mikata:Kk 安心マーク
JP4623322B2 (ja) * 2007-12-26 2011-02-02 信越化学工業株式会社 光半導体ケース形成用白色熱硬化性シリコーン樹脂組成物並びに光半導体ケース及びその成形方法
JP4678415B2 (ja) * 2008-03-18 2011-04-27 信越化学工業株式会社 光半導体ケース形成用白色熱硬化性シリコーン樹脂組成物並びに光半導体ケース
JP2010021533A (ja) * 2008-06-09 2010-01-28 Shin-Etsu Chemical Co Ltd 光半導体ケース形成用白色熱硬化性シリコーン樹脂組成物及び光半導体ケース
JP2010018786A (ja) * 2008-06-09 2010-01-28 Shin-Etsu Chemical Co Ltd 光半導体ケース形成用白色熱硬化性シリコーン樹脂組成物及び光半導体ケース
JP5218298B2 (ja) * 2008-07-02 2013-06-26 信越化学工業株式会社 熱硬化性シリコーン樹脂−エポキシ樹脂組成物及び当該樹脂で成形したプレモールドパッケージ
JP2010106243A (ja) * 2008-09-30 2010-05-13 Shin-Etsu Chemical Co Ltd 光半導体装置用シリコーン樹脂組成物
JP5353629B2 (ja) * 2008-11-14 2013-11-27 信越化学工業株式会社 熱硬化性樹脂組成物
JP5488326B2 (ja) * 2009-09-01 2014-05-14 信越化学工業株式会社 光半導体装置用白色熱硬化性シリコーンエポキシ混成樹脂組成物及びその製造方法並びにプレモールドパッケージ及びｌｅｄ装置

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US20100273927A1 (en) 2010-10-28
CN101870817B (zh) 2013-04-17
CN101870817A (zh) 2010-10-27
EP2253671A1 (de) 2010-11-24
KR101520510B1 (ko) 2015-05-14
US8193269B2 (en) 2012-06-05
KR20100117512A (ko) 2010-11-03
EP2253671B1 (de) 2012-01-18
TW201038672A (en) 2010-11-01
JP5108825B2 (ja) 2012-12-26
TWI393747B (zh) 2013-04-21
JP2010254825A (ja) 2010-11-11

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