ATE542168T1 - Verfahren zur ausrichtung einer fotolithographischen maske auf eine kristallebene - Google Patents

Verfahren zur ausrichtung einer fotolithographischen maske auf eine kristallebene

Info

Publication number
ATE542168T1
ATE542168T1 AT01999861T AT01999861T ATE542168T1 AT E542168 T1 ATE542168 T1 AT E542168T1 AT 01999861 T AT01999861 T AT 01999861T AT 01999861 T AT01999861 T AT 01999861T AT E542168 T1 ATE542168 T1 AT E542168T1
Authority
AT
Austria
Prior art keywords
crystal plane
mask
wafer surface
specific crystal
alignment structure
Prior art date
Application number
AT01999861T
Other languages
English (en)
Inventor
Robert Antaki
Yan Riopel
Annie Vachon
Original Assignee
Teledyne Dalsa Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teledyne Dalsa Semiconductor Inc filed Critical Teledyne Dalsa Semiconductor Inc
Application granted granted Critical
Publication of ATE542168T1 publication Critical patent/ATE542168T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/501—Marks applied to devices, e.g. for alignment or identification for use before dicing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT01999861T 2000-12-08 2001-12-03 Verfahren zur ausrichtung einer fotolithographischen maske auf eine kristallebene ATE542168T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0029929A GB2369928A (en) 2000-12-08 2000-12-08 A method of aligning a mask to a specific crystal plane in a wafer
PCT/CA2001/001723 WO2002046843A1 (en) 2000-12-08 2001-12-03 Method of aligning a photolithographic mask to a crystal plane

Publications (1)

Publication Number Publication Date
ATE542168T1 true ATE542168T1 (de) 2012-02-15

Family

ID=9904677

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01999861T ATE542168T1 (de) 2000-12-08 2001-12-03 Verfahren zur ausrichtung einer fotolithographischen maske auf eine kristallebene

Country Status (6)

Country Link
US (1) US6686214B2 (de)
EP (1) EP1340126B1 (de)
JP (1) JP2004515082A (de)
AT (1) ATE542168T1 (de)
GB (1) GB2369928A (de)
WO (1) WO2002046843A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7253077B2 (en) * 2003-12-01 2007-08-07 Asml Netherlands B.V. Substrate, method of preparing a substrate, method of measurement, lithographic apparatus, device manufacturing method and device manufactured thereby, and machine-readable storage medium
US7625776B2 (en) * 2006-06-02 2009-12-01 Micron Technology, Inc. Methods of fabricating intermediate semiconductor structures by selectively etching pockets of implanted silicon
US7709341B2 (en) * 2006-06-02 2010-05-04 Micron Technology, Inc. Methods of shaping vertical single crystal silicon walls and resulting structures
US7628932B2 (en) 2006-06-02 2009-12-08 Micron Technology, Inc. Wet etch suitable for creating square cuts in si
CN103713477B (zh) * 2012-09-28 2015-11-25 无锡华润上华半导体有限公司 双面光刻机的对位结构及对位方法
CN113219797B (zh) * 2021-03-25 2023-11-17 北海惠科半导体科技有限公司 晶圆半导体产品及其制作方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4309813A (en) 1979-12-26 1982-01-12 Harris Corporation Mask alignment scheme for laterally and totally dielectrically isolated integrated circuits
US4470875A (en) * 1983-11-09 1984-09-11 At&T Bell Laboratories Fabrication of silicon devices requiring anisotropic etching
US4893163A (en) 1988-03-28 1990-01-09 International Business Machines Corporation Alignment mark system for electron beam/optical mixed lithography
JPH02230751A (ja) * 1989-03-03 1990-09-13 Hitachi Ltd 結晶方位の同定方法及び本方法を用いて作成した機構デバイス
JPH09146259A (ja) 1995-08-29 1997-06-06 Ricoh Opt Ind Co Ltd グラデーションマスクとその製造方法およびグラデーションマスクを用いた特殊表面形状の創成方法
DE19609399C2 (de) * 1996-03-01 2002-05-29 Infineon Technologies Ag Verfahren zum Bestimmen der Kristallorientierung in einem Wafer
US6066513A (en) * 1998-10-02 2000-05-23 International Business Machines Corporation Process for precise multichip integration and product thereof

Also Published As

Publication number Publication date
EP1340126A1 (de) 2003-09-03
EP1340126B1 (de) 2012-01-18
US20020072193A1 (en) 2002-06-13
GB2369928A (en) 2002-06-12
WO2002046843A1 (en) 2002-06-13
JP2004515082A (ja) 2004-05-20
GB0029929D0 (en) 2001-01-24
US6686214B2 (en) 2004-02-03

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