ATE542792T1 - Quellen asymmetrischer ligangen, metallhaltige verbindungen mit reduzierter symmetrie und system und verfahren, bei denen diese eingesetzt werden - Google Patents

Quellen asymmetrischer ligangen, metallhaltige verbindungen mit reduzierter symmetrie und system und verfahren, bei denen diese eingesetzt werden

Info

Publication number
ATE542792T1
ATE542792T1 AT06774112T AT06774112T ATE542792T1 AT E542792 T1 ATE542792 T1 AT E542792T1 AT 06774112 T AT06774112 T AT 06774112T AT 06774112 T AT06774112 T AT 06774112T AT E542792 T1 ATE542792 T1 AT E542792T1
Authority
AT
Austria
Prior art keywords
methods
sources
same
ligages
asymmetric
Prior art date
Application number
AT06774112T
Other languages
English (en)
Inventor
Daniel Millward
Stefan Uhlenbrock
Timothy Quick
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE542792T1 publication Critical patent/ATE542792T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C251/00—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton
    • C07C251/02—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups
    • C07C251/04—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms
    • C07C251/10—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of an unsaturated carbon skeleton
    • C07C251/12—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of an unsaturated carbon skeleton being acyclic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C07F5/003—Compounds containing elements of Groups 3 or 13 of the Periodic Table without C-Metal linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/69398—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides the material having a perovskite structure, e.g. BaTiO3

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Formation Of Insulating Films (AREA)
AT06774112T 2005-06-28 2006-06-27 Quellen asymmetrischer ligangen, metallhaltige verbindungen mit reduzierter symmetrie und system und verfahren, bei denen diese eingesetzt werden ATE542792T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/169,082 US7572731B2 (en) 2005-06-28 2005-06-28 Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same
PCT/US2006/024997 WO2007002674A2 (en) 2005-06-28 2006-06-27 Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same

Publications (1)

Publication Number Publication Date
ATE542792T1 true ATE542792T1 (de) 2012-02-15

Family

ID=37450910

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06774112T ATE542792T1 (de) 2005-06-28 2006-06-27 Quellen asymmetrischer ligangen, metallhaltige verbindungen mit reduzierter symmetrie und system und verfahren, bei denen diese eingesetzt werden

Country Status (8)

Country Link
US (3) US7572731B2 (de)
EP (1) EP1907354B1 (de)
JP (1) JP5181292B2 (de)
KR (1) KR101273024B1 (de)
CN (1) CN101208295B (de)
AT (1) ATE542792T1 (de)
TW (1) TWI410514B (de)
WO (1) WO2007002674A2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7482037B2 (en) * 2004-08-20 2009-01-27 Micron Technology, Inc. Methods for forming niobium and/or vanadium containing layers using atomic layer deposition
US7439338B2 (en) 2005-06-28 2008-10-21 Micron Technology, Inc. Beta-diketiminate ligand sources and metal-containing compounds thereof, and systems and methods including same
US7416994B2 (en) * 2005-06-28 2008-08-26 Micron Technology, Inc. Atomic layer deposition systems and methods including metal beta-diketiminate compounds
US7572731B2 (en) * 2005-06-28 2009-08-11 Micron Technology, Inc. Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same
DE102005033579A1 (de) * 2005-07-19 2007-01-25 H.C. Starck Gmbh Verfahren zur Herstellung dünner Hafnium- oder Zirkonnitrid-Schichten
US7402534B2 (en) * 2005-08-26 2008-07-22 Applied Materials, Inc. Pretreatment processes within a batch ALD reactor
EP1961755A1 (de) * 2007-02-21 2008-08-27 L'AIR LIQUIDE, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Strontium-Silylamide, Addukte davon mit Lewisbasen, deren Herstellung und Abscheidung eines dunnen Strontiumfilmes
WO2009012341A2 (en) * 2007-07-16 2009-01-22 Advancaed Technology Materials, Inc. Group iv complexes as cvd and ald precursors for forming metal-containing thin films
EP2173922A1 (de) * 2007-07-24 2010-04-14 L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Rutheniumvorläufer mit zwei unterschiedlichen liganden für halbleiteranwendungen
US20100003532A1 (en) * 2008-06-06 2010-01-07 Feist Benjamin J Beta-diketiminate precursors for metal containing film deposition
US8313807B2 (en) * 2008-08-05 2012-11-20 Air Products And Chemicals, Inc. High coordination sphere group 2 metal β-diketiminate precursors
US20100130779A1 (en) * 2008-11-21 2010-05-27 Air Products And Chemicals, Inc. Volatile Group 2 Metal 1,3,5-Triazapentadienate Compounds
US8076243B2 (en) * 2009-01-26 2011-12-13 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Metal precursors for deposition of metal-containing films
JP5692842B2 (ja) * 2010-06-04 2015-04-01 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
WO2012138332A1 (en) * 2011-04-06 2012-10-11 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Hafnium-containing or zirconium-containing precursors for vapor deposition
TWI563111B (en) * 2011-12-16 2016-12-21 Applied Materials Inc Film deposition using tantalum precursors
WO2013154779A1 (en) * 2012-04-10 2013-10-17 The Regents Of The University Of California Nanocrystal-polymer nanocomposite electrochromic device
KR102442621B1 (ko) 2015-11-30 2022-09-13 삼성전자주식회사 니오븀 화합물을 이용한 박막 형성 방법 및 집적회로 소자의 제조 방법
US11440929B2 (en) * 2018-06-19 2022-09-13 Versum Materials Us, Llc Bis(diazadiene)cobalt compounds, method of making and method of use thereof
CN112640078B (zh) * 2018-09-05 2022-07-01 应用材料公司 用于基板处理腔室的气体输入系统
US11053501B2 (en) 2018-11-30 2021-07-06 The Penn State Research Foundation Methods of treating neurodegenerative disease by inhibiting N-deacetylase N-sulfotransferase
JP7554763B2 (ja) 2019-11-01 2024-09-20 株式会社Adeka 新規化合物、該化合物を含有する薄膜形成用原料及び薄膜の製造方法
CN117186126A (zh) * 2022-05-31 2023-12-08 华为技术有限公司 金属化合物及其制备方法和应用

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4202889C2 (de) 1992-02-01 1994-12-15 Solvay Deutschland Verfahren zur Abscheidung von ein Metall der ersten Übergangsmetallreihe oder Aluminium enthaltenden Schichten und 1,3-Diketiminato-Metall-Verbindungen
US5256244A (en) * 1992-02-10 1993-10-26 General Electric Company Production of diffuse reflective coatings by atomic layer epitaxy
US5972430A (en) 1997-11-26 1999-10-26 Advanced Technology Materials, Inc. Digital chemical vapor deposition (CVD) method for forming a multi-component oxide layer
US6225237B1 (en) * 1998-09-01 2001-05-01 Micron Technology, Inc. Method for forming metal-containing films using metal complexes with chelating O- and/or N-donor ligands
KR100418581B1 (ko) 2001-06-12 2004-02-11 주식회사 하이닉스반도체 메모리 소자의 제조방법
KR100418569B1 (ko) 2001-12-10 2004-02-14 주식회사 하이닉스반도체 단원자층증착을 이용한 고유전체 박막 형성방법
JP2005520053A (ja) 2002-01-18 2005-07-07 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 原子層堆積によって銅薄膜を堆積させるための揮発性銅（ｉｉ）錯体
US20040247905A1 (en) * 2003-04-16 2004-12-09 Bradley Alexander Zak Volatile copper(I) complexes for deposition of copper films by atomic layer deposition
US20050227007A1 (en) * 2004-04-08 2005-10-13 Bradley Alexander Z Volatile copper(I) complexes for deposition of copper films by atomic layer deposition
KR20060096445A (ko) * 2003-10-29 2006-09-11 에이에스엠 아메리카, 인코포레이티드 박막 성장용 반응 시스템
US7416994B2 (en) * 2005-06-28 2008-08-26 Micron Technology, Inc. Atomic layer deposition systems and methods including metal beta-diketiminate compounds
US7572731B2 (en) 2005-06-28 2009-08-11 Micron Technology, Inc. Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same
US7439338B2 (en) 2005-06-28 2008-10-21 Micron Technology, Inc. Beta-diketiminate ligand sources and metal-containing compounds thereof, and systems and methods including same
US7892358B2 (en) * 2006-03-29 2011-02-22 Tokyo Electron Limited System for introducing a precursor gas to a vapor deposition system

Also Published As

Publication number Publication date
CN101208295A (zh) 2008-06-25
KR20080017401A (ko) 2008-02-26
US20090275199A1 (en) 2009-11-05
EP1907354A2 (de) 2008-04-09
EP1907354B1 (de) 2012-01-25
US20080214001A9 (en) 2008-09-04
CN101208295B (zh) 2012-03-21
US20110071316A1 (en) 2011-03-24
US9234273B2 (en) 2016-01-12
JP5181292B2 (ja) 2013-04-10
WO2007002674A2 (en) 2007-01-04
TW200706682A (en) 2007-02-16
US7858523B2 (en) 2010-12-28
WO2007002674A3 (en) 2007-02-22
US7572731B2 (en) 2009-08-11
KR101273024B1 (ko) 2013-06-10
TWI410514B (zh) 2013-10-01
US20060292873A1 (en) 2006-12-28
JP2008546914A (ja) 2008-12-25

Similar Documents

Publication Publication Date Title
ATE542792T1 (de) Quellen asymmetrischer ligangen, metallhaltige verbindungen mit reduzierter symmetrie und system und verfahren, bei denen diese eingesetzt werden
Crespo et al. Kinetico-mechanistic studies on CX (X= H, F, Cl, Br, I) bond activation reactions on organoplatinum (II) complexes
ATE553111T1 (de) Metallkomplexe aus imidazoä1,2-füphenanthridin- liganden und deren verwendung in oled vorrichtungen
WO2007105052A3 (en) Multiple-metal complex-containing compound and metal complex, and manufacture methods therefor, and exhaust gas purification catalyst manufacture method using the same
Poddel'sky et al. Transition metal complexes with bulky 4, 6-di-tert-butyl-N-aryl (alkyl)-o-iminobenzoquinonato ligands: Structure, EPR and magnetism
MX2023008168A (es) Complejos peptidicos biciclicos heterotandem.
DE50211846D1 (de) NEUE PHOSPHITVERBINDUNGEN UND DEREN Rh-KOMPLEXE
ATE509134T1 (de) Atomlagenabscheidungssysteme und -verfahren mit metall-beta-diketiminat-verbindungen
BR112022001532A2 (pt) Complexos de peptídeos bicíclicos em heterotandem
EP2512673A4 (de) Nickelmetallzusammensetzungen und nickelkomplexe aus basischen nickelcarbonaten
EA200870265A1 (ru) Функционально активные антитела
MX2009008656A (es) Anticuerpos contra erbb3 y usos de los mismos.
Phanopoulos et al. Beyond Triphos–New hinges for a classical chelating ligand
SG148140A1 (en) Organometallic compounds
WO2008033858A3 (en) Kinase inhibitors, and methods of using and identifying kinase inhibitors
WO2009122361A3 (en) Preparation of lanthanide-containing precursors and deposition of lanthanide-containing films
JP2014185146A5 (de)
JP2010189376A5 (ja) 有機金属錯体
CR20110341A (es) Compuesto amino pirazol
EP3424099A4 (de) Koordinationskomplexe mit monosulfonierten katecholatliganden und verfahren zur herstellung davon
ATE548359T1 (de) Verbindungen und verfahren zur inhibierung der wechselwirkung von bcl-proteinen mit bindungspartnern
MX388391B (es) Hidrogenacion de esteres con complejos de ligandos de tridentados de hierro (fe).
SG139706A1 (en) Organometallic compounds
SG10201709023TA (en) Disubstituted alkyne dicobalt hexacarbonyl compounds, method of making and method of use thereof
BRPI0511027A (pt) ligantes de cicloolefina fosfina e seu uso em catálise