ATE542792T1 - Quellen asymmetrischer ligangen, metallhaltige verbindungen mit reduzierter symmetrie und system und verfahren, bei denen diese eingesetzt werden - Google Patents

Quellen asymmetrischer ligangen, metallhaltige verbindungen mit reduzierter symmetrie und system und verfahren, bei denen diese eingesetzt werden

Info

Publication number
ATE542792T1
ATE542792T1 AT06774112T AT06774112T ATE542792T1 AT E542792 T1 ATE542792 T1 AT E542792T1 AT 06774112 T AT06774112 T AT 06774112T AT 06774112 T AT06774112 T AT 06774112T AT E542792 T1 ATE542792 T1 AT E542792T1
Authority
AT
Austria
Prior art keywords
methods
sources
same
ligages
asymmetric
Prior art date
Application number
AT06774112T
Other languages
English (en)
Inventor
Daniel Millward
Stefan Uhlenbrock
Timothy Quick
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE542792T1 publication Critical patent/ATE542792T1/de

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C251/00—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton
    • C07C251/02—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups
    • C07C251/04—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms
    • C07C251/10—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of an unsaturated carbon skeleton
    • C07C251/12—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of an unsaturated carbon skeleton being acyclic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C07F5/003—Compounds containing elements of Groups 3 or 13 of the Periodic Table without C-Metal linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/69398—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides the material having a perovskite structure, e.g. BaTiO3

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
AT06774112T 2005-06-28 2006-06-27 Quellen asymmetrischer ligangen, metallhaltige verbindungen mit reduzierter symmetrie und system und verfahren, bei denen diese eingesetzt werden ATE542792T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/169,082 US7572731B2 (en) 2005-06-28 2005-06-28 Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same
PCT/US2006/024997 WO2007002674A2 (en) 2005-06-28 2006-06-27 Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same

Publications (1)

Publication Number Publication Date
ATE542792T1 true ATE542792T1 (de) 2012-02-15

Family

ID=37450910

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06774112T ATE542792T1 (de) 2005-06-28 2006-06-27 Quellen asymmetrischer ligangen, metallhaltige verbindungen mit reduzierter symmetrie und system und verfahren, bei denen diese eingesetzt werden

Country Status (8)

Country Link
US (3) US7572731B2 (de)
EP (1) EP1907354B1 (de)
JP (1) JP5181292B2 (de)
KR (1) KR101273024B1 (de)
CN (1) CN101208295B (de)
AT (1) ATE542792T1 (de)
TW (1) TWI410514B (de)
WO (1) WO2007002674A2 (de)

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US7482037B2 (en) * 2004-08-20 2009-01-27 Micron Technology, Inc. Methods for forming niobium and/or vanadium containing layers using atomic layer deposition
US7439338B2 (en) * 2005-06-28 2008-10-21 Micron Technology, Inc. Beta-diketiminate ligand sources and metal-containing compounds thereof, and systems and methods including same
US7572731B2 (en) * 2005-06-28 2009-08-11 Micron Technology, Inc. Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same
US7416994B2 (en) * 2005-06-28 2008-08-26 Micron Technology, Inc. Atomic layer deposition systems and methods including metal beta-diketiminate compounds
DE102005033579A1 (de) * 2005-07-19 2007-01-25 H.C. Starck Gmbh Verfahren zur Herstellung dünner Hafnium- oder Zirkonnitrid-Schichten
US7402534B2 (en) * 2005-08-26 2008-07-22 Applied Materials, Inc. Pretreatment processes within a batch ALD reactor
EP1961755A1 (de) * 2007-02-21 2008-08-27 L'AIR LIQUIDE, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Strontium-Silylamide, Addukte davon mit Lewisbasen, deren Herstellung und Abscheidung eines dunnen Strontiumfilmes
WO2009012341A2 (en) * 2007-07-16 2009-01-22 Advancaed Technology Materials, Inc. Group iv complexes as cvd and ald precursors for forming metal-containing thin films
US20090028745A1 (en) * 2007-07-24 2009-01-29 Julien Gatineau Ruthenium precursor with two differing ligands for use in semiconductor applications
US20100003532A1 (en) * 2008-06-06 2010-01-07 Feist Benjamin J Beta-diketiminate precursors for metal containing film deposition
US8313807B2 (en) * 2008-08-05 2012-11-20 Air Products And Chemicals, Inc. High coordination sphere group 2 metal β-diketiminate precursors
US20100130779A1 (en) * 2008-11-21 2010-05-27 Air Products And Chemicals, Inc. Volatile Group 2 Metal 1,3,5-Triazapentadienate Compounds
US8076243B2 (en) * 2009-01-26 2011-12-13 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Metal precursors for deposition of metal-containing films
JP5692842B2 (ja) * 2010-06-04 2015-04-01 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
KR101721294B1 (ko) * 2011-04-06 2017-03-29 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 증착을 위한 하프늄-함유 또는 지르코늄-함유 전구체
TWI563111B (en) * 2011-12-16 2016-12-21 Applied Materials Inc Film deposition using tantalum precursors
WO2013154779A1 (en) * 2012-04-10 2013-10-17 The Regents Of The University Of California Nanocrystal-polymer nanocomposite electrochromic device
KR102442621B1 (ko) 2015-11-30 2022-09-13 삼성전자주식회사 니오븀 화합물을 이용한 박막 형성 방법 및 집적회로 소자의 제조 방법
US11440929B2 (en) 2018-06-19 2022-09-13 Versum Materials Us, Llc Bis(diazadiene)cobalt compounds, method of making and method of use thereof
KR20210041095A (ko) 2018-09-05 2021-04-14 어플라이드 머티어리얼스, 인코포레이티드 기판 프로세싱 챔버를 위한 가스 입력 시스템
US11053501B2 (en) 2018-11-30 2021-07-06 The Penn State Research Foundation Methods of treating neurodegenerative disease by inhibiting N-deacetylase N-sulfotransferase
WO2021085210A1 (ja) 2019-11-01 2021-05-06 株式会社Adeka 新規化合物、該化合物を含有する薄膜形成用原料及び薄膜の製造方法
KR20230106992A (ko) 2022-01-07 2023-07-14 삼성전자주식회사 박막 제조용 조성물 및 이를 이용한 반도체 장치 제조 방법
CN117186126A (zh) * 2022-05-31 2023-12-08 华为技术有限公司 金属化合物及其制备方法和应用

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US7439338B2 (en) 2005-06-28 2008-10-21 Micron Technology, Inc. Beta-diketiminate ligand sources and metal-containing compounds thereof, and systems and methods including same
US7416994B2 (en) 2005-06-28 2008-08-26 Micron Technology, Inc. Atomic layer deposition systems and methods including metal beta-diketiminate compounds
US7572731B2 (en) 2005-06-28 2009-08-11 Micron Technology, Inc. Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same
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Also Published As

Publication number Publication date
JP2008546914A (ja) 2008-12-25
JP5181292B2 (ja) 2013-04-10
TW200706682A (en) 2007-02-16
CN101208295B (zh) 2012-03-21
US7858523B2 (en) 2010-12-28
EP1907354B1 (de) 2012-01-25
US7572731B2 (en) 2009-08-11
WO2007002674A3 (en) 2007-02-22
US20060292873A1 (en) 2006-12-28
WO2007002674A2 (en) 2007-01-04
CN101208295A (zh) 2008-06-25
US20110071316A1 (en) 2011-03-24
KR20080017401A (ko) 2008-02-26
US9234273B2 (en) 2016-01-12
TWI410514B (zh) 2013-10-01
EP1907354A2 (de) 2008-04-09
US20090275199A1 (en) 2009-11-05
KR101273024B1 (ko) 2013-06-10
US20080214001A9 (en) 2008-09-04

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