ATE54293T1 - Verfahren zur herstellung von siliciumimid und dessen weiterberarbeitung zu siliciumnitrid. - Google Patents

Verfahren zur herstellung von siliciumimid und dessen weiterberarbeitung zu siliciumnitrid.

Info

Publication number: ATE54293T1
Authority: AT; Austria
Prior art keywords: silicon; imide; produce; silicon nitride; production
Prior art date: 1985-12-09

Application number

AT85308944T

Other languages

English (en)

Inventor

Takeshi Isoda

Mikiro Arai

Original Assignee

Toa Nenryo Kogyo Kk

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1985-12-09

Filing date

1985-12-09

Publication date

1990-07-15

1985-12-09 Application filed by Toa Nenryo Kogyo Kk filed Critical Toa Nenryo Kogyo Kk

1990-07-15 Application granted granted Critical

1990-07-15 Publication of ATE54293T1 publication Critical patent/ATE54293T1/de

Links

-1 SILICON IMIDE Chemical class 0.000 title abstract 3
229910052710 silicon Inorganic materials 0.000 title abstract 3
239000010703 silicon Substances 0.000 title abstract 3
229910052581 Si3N4 Inorganic materials 0.000 title abstract 2
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title abstract 2
238000000034 method Methods 0.000 title 1
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 abstract 2
150000001408 amides Chemical class 0.000 abstract 2
229910000074 antimony hydride Inorganic materials 0.000 abstract 2
RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 abstract 2
150000003949 imides Chemical class 0.000 abstract 2
OUULRIDHGPHMNQ-UHFFFAOYSA-N stibane Chemical compound [SbH3] OUULRIDHGPHMNQ-UHFFFAOYSA-N 0.000 abstract 2
QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract 1
239000002879 Lewis base Substances 0.000 abstract 1
229910003910 SiCl4 Inorganic materials 0.000 abstract 1
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
239000002585 base Substances 0.000 abstract 1
239000006227 byproduct Substances 0.000 abstract 1
239000013078 crystal Substances 0.000 abstract 1
150000007527 lewis bases Chemical class 0.000 abstract 1
229910052757 nitrogen Inorganic materials 0.000 abstract 1
239000003960 organic solvent Substances 0.000 abstract 1
150000003003 phosphines Chemical class 0.000 abstract 1
229910000073 phosphorus hydride Inorganic materials 0.000 abstract 1
150000003335 secondary amines Chemical class 0.000 abstract 1
FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 abstract 1
238000005245 sintering Methods 0.000 abstract 1
150000003512 tertiary amines Chemical class 0.000 abstract 1

Classifications

- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/082—Compounds containing nitrogen and non-metals and optionally metals
- C01B21/087—Compounds containing nitrogen and non-metals and optionally metals containing one or more hydrogen atoms
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/82—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by IR- or Raman-data
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/88—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by thermal analysis data, e.g. TGA, DTA, DSC

Landscapes

Chemical & Material Sciences (AREA)
Organic Chemistry (AREA)
Inorganic Chemistry (AREA)
Ceramic Products (AREA)

AT85308944T 1985-12-09 1985-12-09 Verfahren zur herstellung von siliciumimid und dessen weiterberarbeitung zu siliciumnitrid. ATE54293T1 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
EP85308944A EP0225412B1 (de)	1985-12-09	1985-12-09	Verfahren zur Herstellung von Siliciumimid und dessen Weiterberarbeitung zu Siliciumnitrid

Publications (1)

Publication Number	Publication Date
ATE54293T1 true ATE54293T1 (de)	1990-07-15

Family

ID=8194469

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
AT85308944T ATE54293T1 (de)	1985-12-09	1985-12-09	Verfahren zur herstellung von siliciumimid und dessen weiterberarbeitung zu siliciumnitrid.

Country Status (3)

Country	Link
EP (1)	EP0225412B1 (de)
AT (1)	ATE54293T1 (de)
DE (1)	DE3578581D1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0228189B1 (de) *	1985-12-23	1992-06-17	Ford Motor Company Limited	Verfahren zur Herstellung von Siliziumnitridpulver
DE4031070A1 (de) *	1990-10-02	1992-04-09	Bayer Ag	Siliciumdiimid, verfahren zu dessen herstellung sowie daraus erhaltenes siliciumnitrid
CN114433246A (zh) *	2022-01-11	2022-05-06	中科合成油技术股份有限公司	高分散的锚定于氮化硅的过渡金属催化剂及其制备方法和应用

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3959446A (en) *	1974-03-01	1976-05-25	The United States Of America As Represented By The Secretary Of The Air Force	Synthesis of high purity, alpha phase silicon nitride powder
JPS54145400A (en) *	1978-05-08	1979-11-13	Ube Ind Ltd	Production of metal nitride powder
JPS5595605A (en) *	1979-01-10	1980-07-21	Toyo Soda Mfg Co Ltd	High purity silicon nitride and production thereof

1985
- 1985-12-09 EP EP85308944A patent/EP0225412B1/de not_active Expired
- 1985-12-09 DE DE8585308944T patent/DE3578581D1/de not_active Expired - Lifetime
- 1985-12-09 AT AT85308944T patent/ATE54293T1/de active

Also Published As

Publication number	Publication date
EP0225412B1 (de)	1990-07-04
DE3578581D1 (de)	1990-08-09
EP0225412A1 (de)	1987-06-16

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