ATE543186T1 - Anti-schmelzverbindungs-speicherbaustein - Google Patents

Anti-schmelzverbindungs-speicherbaustein

Info

Publication number
ATE543186T1
ATE543186T1 AT06728122T AT06728122T ATE543186T1 AT E543186 T1 ATE543186 T1 AT E543186T1 AT 06728122 T AT06728122 T AT 06728122T AT 06728122 T AT06728122 T AT 06728122T AT E543186 T1 ATE543186 T1 AT E543186T1
Authority
AT
Austria
Prior art keywords
layers
cell
exothermic
materials
fuzzle
Prior art date
Application number
AT06728122T
Other languages
English (en)
Inventor
Der Sluis Paul Van
Andrei Mijiritskii
Pierre Woerlee
Acht Victor Van
Nicolaas Lambert
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE543186T1 publication Critical patent/ATE543186T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/491—Antifuses, i.e. interconnections changeable from non-conductive to conductive

Landscapes

  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
AT06728122T 2005-05-24 2006-05-04 Anti-schmelzverbindungs-speicherbaustein ATE543186T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP05104378 2005-05-24
PCT/IB2006/051406 WO2006126110A1 (en) 2005-05-24 2006-05-04 Anti-fuse memory device

Publications (1)

Publication Number Publication Date
ATE543186T1 true ATE543186T1 (de) 2012-02-15

Family

ID=36808848

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06728122T ATE543186T1 (de) 2005-05-24 2006-05-04 Anti-schmelzverbindungs-speicherbaustein

Country Status (8)

Country Link
US (1) US7923813B2 (de)
EP (1) EP1889262B1 (de)
JP (1) JP2008543040A (de)
KR (1) KR20080012989A (de)
CN (1) CN101180684B (de)
AT (1) ATE543186T1 (de)
TW (1) TW200713290A (de)
WO (1) WO2006126110A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9078294B2 (en) * 2006-08-07 2015-07-07 University Of Massachusetts Nanoheater elements, systems and methods of use thereof
WO2008075315A2 (en) * 2006-12-20 2008-06-26 Nxp B.V. Brazed flip-chip mounting of integrated circuits
JP5291905B2 (ja) * 2007-08-24 2013-09-18 株式会社半導体エネルギー研究所 記憶装置
KR100979348B1 (ko) * 2008-03-13 2010-08-31 주식회사 하이닉스반도체 반도체 소자의 퓨즈 및 그 제조 방법
WO2010090002A1 (ja) 2009-02-04 2010-08-12 パナソニック株式会社 不揮発性記憶素子
US8467215B2 (en) * 2010-01-29 2013-06-18 Brigham Young University Permanent solid state memory
KR101128896B1 (ko) * 2010-09-14 2012-03-27 주식회사 하이닉스반도체 반도체 소자의 안티퓨즈 및 그 제조 방법
US9842802B2 (en) 2012-06-29 2017-12-12 Qualcomm Incorporated Integrated circuit device featuring an antifuse and method of making same
US9502424B2 (en) 2012-06-29 2016-11-22 Qualcomm Incorporated Integrated circuit device featuring an antifuse and method of making same
US9224945B2 (en) * 2012-08-30 2015-12-29 Micron Technology, Inc. Resistive memory devices
WO2015147782A1 (en) * 2014-03-24 2015-10-01 Intel Corporation Antifuse element using spacer breakdown
US9431354B2 (en) * 2014-11-06 2016-08-30 International Business Machines Corporation Activating reactions in integrated circuits through electrical discharge
US11282960B2 (en) * 2020-08-04 2022-03-22 Nanya Technology Corporation Semiconductor device with programmable element and method for fabricating the same
US11189357B1 (en) 2020-08-10 2021-11-30 Nanya Technology Corporation Programmable memory device
CN117334665A (zh) * 2022-06-24 2024-01-02 长鑫存储技术有限公司 半导体结构及其制造方法、存储器及其操作方法
EP4318476B1 (de) 2022-06-24 2026-03-04 Changxin Memory Technologies, Inc. Halbleiterstruktur und herstellungsverfahren dafür, speicher und betriebsverfahren dafür

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3959799A (en) * 1974-09-09 1976-05-25 International Business Machines Corporation Information storage by laser beam initiated reactions
US5296716A (en) * 1991-01-18 1994-03-22 Energy Conversion Devices, Inc. Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
US5290734A (en) * 1991-06-04 1994-03-01 Vlsi Technology, Inc. Method for making anti-fuse structures
US5120679A (en) * 1991-06-04 1992-06-09 Vlsi Technology, Inc. Anti-fuse structures and methods for making same
WO1993005514A1 (en) * 1991-09-04 1993-03-18 Vlsi Technology, Inc. Anti-fuse structures and methods for making same
US5298784A (en) * 1992-03-27 1994-03-29 International Business Machines Corporation Electrically programmable antifuse using metal penetration of a junction
US5284788A (en) * 1992-09-25 1994-02-08 Texas Instruments Incorporated Method and device for controlling current in a circuit
US5308795A (en) * 1992-11-04 1994-05-03 Actel Corporation Above via metal-to-metal antifuse
US5387311A (en) * 1993-02-16 1995-02-07 Vlsi Technology, Inc. Method for manufacturing anti-fuse structures
US5463244A (en) * 1994-05-26 1995-10-31 Symetrix Corporation Antifuse programmable element using ferroelectric material
US6090701A (en) * 1994-06-21 2000-07-18 Kabushiki Kaisha Toshiba Method for production of semiconductor device
US5493146A (en) * 1994-07-14 1996-02-20 Vlsi Technology, Inc. Anti-fuse structure for reducing contamination of the anti-fuse material
JPH08139197A (ja) * 1994-11-11 1996-05-31 Tadahiro Omi シリサイド反応を利用した半導体装置
US5495436A (en) * 1995-01-13 1996-02-27 Vlsi Technology, Inc. Anti-fuse ROM programming circuit
US5741720A (en) * 1995-10-04 1998-04-21 Actel Corporation Method of programming an improved metal-to-metal via-type antifuse
US5789795A (en) * 1995-12-28 1998-08-04 Vlsi Technology, Inc. Methods and apparatus for fabricationg anti-fuse devices
US5793094A (en) * 1995-12-28 1998-08-11 Vlsi Technology, Inc. Methods for fabricating anti-fuse structures
US6147395A (en) * 1996-10-02 2000-11-14 Micron Technology, Inc. Method for fabricating a small area of contact between electrodes
US6553911B1 (en) * 1997-04-30 2003-04-29 Erico International Corporation Exothermic reactions and methods
US6016001A (en) * 1997-06-18 2000-01-18 Vlsi Technology, Inc. Metal to amorphous silicon to metal anti-fuse structure
DE69808240T2 (de) * 1997-10-17 2003-06-26 Kabushiki Kaisha Toyota Chuo Kenkyusho, Aichi Speicherungselement
US6156588A (en) * 1998-06-23 2000-12-05 Vlsi Technology, Inc. Method of forming anti-fuse structure
US6737686B2 (en) * 2002-06-13 2004-05-18 Hewlett-Packard Development Company, L.P. Non-volatile programmable memory device
US6873541B2 (en) * 2003-06-09 2005-03-29 Macronix International Co., Ltd. Nonvolatile memory programmble by a heat induced chemical reaction

Also Published As

Publication number Publication date
KR20080012989A (ko) 2008-02-12
CN101180684B (zh) 2011-03-30
US7923813B2 (en) 2011-04-12
WO2006126110A1 (en) 2006-11-30
EP1889262A1 (de) 2008-02-20
TW200713290A (en) 2007-04-01
JP2008543040A (ja) 2008-11-27
EP1889262B1 (de) 2012-01-25
US20090072212A1 (en) 2009-03-19
CN101180684A (zh) 2008-05-14

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