ATE54340T1 - Plasmareaktorgefaess und verfahren. - Google Patents

Plasmareaktorgefaess und verfahren.

Info

Publication number
ATE54340T1
ATE54340T1 AT85308526T AT85308526T ATE54340T1 AT E54340 T1 ATE54340 T1 AT E54340T1 AT 85308526 T AT85308526 T AT 85308526T AT 85308526 T AT85308526 T AT 85308526T AT E54340 T1 ATE54340 T1 AT E54340T1
Authority
AT
Austria
Prior art keywords
reactor vessel
plasma reactor
substrate
region
confine
Prior art date
Application number
AT85308526T
Other languages
English (en)
Inventor
Rudolf August Heinecke
Sureshchandra Mishrilal Ojha
Ian Paul Llewellyn
Original Assignee
Stc Plc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=10571102&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE54340(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Stc Plc filed Critical Stc Plc
Application granted granted Critical
Publication of ATE54340T1 publication Critical patent/ATE54340T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT85308526T 1984-12-13 1985-11-25 Plasmareaktorgefaess und verfahren. ATE54340T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB848431422A GB8431422D0 (en) 1984-12-13 1984-12-13 Plasma reactor vessel
EP85308526A EP0184917B1 (de) 1984-12-13 1985-11-25 Plasmareaktorgefäss und Verfahren

Publications (1)

Publication Number Publication Date
ATE54340T1 true ATE54340T1 (de) 1990-07-15

Family

ID=10571102

Family Applications (1)

Application Number Title Priority Date Filing Date
AT85308526T ATE54340T1 (de) 1984-12-13 1985-11-25 Plasmareaktorgefaess und verfahren.

Country Status (5)

Country Link
EP (1) EP0184917B1 (de)
JP (1) JPH0689462B2 (de)
AT (1) ATE54340T1 (de)
DE (1) DE3578562D1 (de)
GB (2) GB8431422D0 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8516537D0 (en) * 1985-06-29 1985-07-31 Standard Telephones Cables Ltd Pulsed plasma apparatus
GB8905075D0 (en) * 1989-03-06 1989-04-19 Nordiko Ltd Electrode assembly and apparatus
GB9010000D0 (en) * 1990-05-03 1990-06-27 Stc Plc Phosphide films
US6129808A (en) * 1998-03-31 2000-10-10 Lam Research Corporation Low contamination high density plasma etch chambers and methods for making the same
DE19923018C2 (de) * 1999-05-19 2001-09-27 Univ Dresden Tech Vorrichtung zur Bearbeitung bandförmiger Werkstücke mit Hilfe resonanter Hochfrequenzplasmen
US12311759B1 (en) 2022-02-02 2025-05-27 Consumer Safety Technology, Llc Wireless vehicle interface for immobilization system

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE526527A (de) * 1953-02-17
BE555721A (de) * 1956-03-12
US3880684A (en) * 1973-08-03 1975-04-29 Mitsubishi Electric Corp Process for preparing semiconductor
JPS53112066A (en) * 1977-03-11 1978-09-30 Fujitsu Ltd Plasma treatment apparatus
US4303467A (en) * 1977-11-11 1981-12-01 Branson International Plasma Corporation Process and gas for treatment of semiconductor devices
JPS5738921Y2 (de) * 1977-12-28 1982-08-27
US4297162A (en) * 1979-10-17 1981-10-27 Texas Instruments Incorporated Plasma etching using improved electrode
US4333814A (en) * 1979-12-26 1982-06-08 Western Electric Company, Inc. Methods and apparatus for improving an RF excited reactive gas plasma
EP0032788B2 (de) * 1980-01-16 1989-12-06 National Research Development Corporation Verfahren zum Aufbringen einer Beschichtung mittels Glimmentladung
JPS601952B2 (ja) * 1980-01-25 1985-01-18 三菱電機株式会社 プラズマエツチング装置
DE3015034C2 (de) * 1980-04-18 1982-04-08 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., 8000 München Verfahren zur Herstellung von Mikrostrukturen auf festen Körpern
DE3103177A1 (de) * 1981-01-30 1982-08-26 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von polysiliziumstrukturen bis in den 1 (my)m-bereich auf integrierte halbleiterschaltungen enthaltenden substraten durch plasmaaetzen
US4353777A (en) * 1981-04-20 1982-10-12 Lfe Corporation Selective plasma polysilicon etching
GB2105729B (en) * 1981-09-15 1985-06-12 Itt Ind Ltd Surface processing of a substrate material
EP0095200B1 (de) * 1982-05-21 1989-03-15 Tegal Corporation Ausnehmbares Teil eines Plasmareaktors
GB8324779D0 (en) * 1982-09-29 1983-10-19 Nat Res Dev Depositing film onto substrate
JPS59119729A (ja) * 1982-12-25 1984-07-11 Fujitsu Ltd マイクロ波処理方法及び装置
JPS59171491A (ja) * 1983-03-18 1984-09-27 富士通株式会社 マイクロ波処理方法及び処理装置

Also Published As

Publication number Publication date
GB2170350A (en) 1986-07-30
GB8431422D0 (en) 1985-01-23
JPH0689462B2 (ja) 1994-11-09
JPS61149486A (ja) 1986-07-08
DE3578562D1 (de) 1990-08-09
EP0184917B1 (de) 1990-07-04
EP0184917A1 (de) 1986-06-18
GB8528999D0 (en) 1986-01-02
GB2170350B (en) 1988-11-02

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Legal Events

Date Code Title Description
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