ATE544155T1 - Elektronische vorrichtung für eine rekonfigurierbare logikschaltung - Google Patents

Elektronische vorrichtung für eine rekonfigurierbare logikschaltung

Info

Publication number
ATE544155T1
ATE544155T1 AT08014162T AT08014162T ATE544155T1 AT E544155 T1 ATE544155 T1 AT E544155T1 AT 08014162 T AT08014162 T AT 08014162T AT 08014162 T AT08014162 T AT 08014162T AT E544155 T1 ATE544155 T1 AT E544155T1
Authority
AT
Austria
Prior art keywords
electronic device
logic circuit
reconfigurable logic
state
resistive switch
Prior art date
Application number
AT08014162T
Other languages
English (en)
Inventor
Bjoern Luessem
Silvia Rosselli
Gabriele Nelles
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of ATE544155T1 publication Critical patent/ATE544155T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
    • H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
    • H03K19/1778—Structural details for adapting physical parameters
    • H03K19/17784—Structural details for adapting physical parameters for supply voltage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/003—Cell access
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
    • H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
    • H03K19/1778—Structural details for adapting physical parameters
    • H03K19/17792—Structural details for adapting physical parameters for operating speed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/50—Bistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/32—Material having simple binary metal oxide structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/75—Array having a NAND structure comprising, for example, memory cells in series or memory elements in series, a memory element being a memory cell in parallel with an access transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/202—Integrated devices comprising a common active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Computing Systems (AREA)
  • Computer Hardware Design (AREA)
  • General Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Thin Film Transistor (AREA)
  • Logic Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Networks Using Active Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
AT08014162T 2008-08-07 2008-08-07 Elektronische vorrichtung für eine rekonfigurierbare logikschaltung ATE544155T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP08014162A EP2151827B1 (de) 2008-08-07 2008-08-07 Elektronische Vorrichtung für eine rekonfigurierbare Logikschaltung

Publications (1)

Publication Number Publication Date
ATE544155T1 true ATE544155T1 (de) 2012-02-15

Family

ID=39832456

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08014162T ATE544155T1 (de) 2008-08-07 2008-08-07 Elektronische vorrichtung für eine rekonfigurierbare logikschaltung

Country Status (7)

Country Link
US (1) US8431918B2 (de)
EP (1) EP2151827B1 (de)
JP (1) JP2011530252A (de)
KR (1) KR20110047190A (de)
CN (1) CN102138180A (de)
AT (1) ATE544155T1 (de)
WO (1) WO2010015363A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7728622B2 (en) * 2007-03-29 2010-06-01 Qualcomm Incorporated Software programmable logic using spin transfer torque magnetoresistive random access memory
CN104756193B (zh) * 2013-01-14 2018-11-06 慧与发展有限责任合伙企业 非易失性存储器阵列逻辑
WO2015139207A1 (zh) 2014-03-18 2015-09-24 华为技术有限公司 阻变存储器逻辑运算阵列的操作方法、装置及设备
US10236888B2 (en) * 2016-03-29 2019-03-19 Arm Ltd. Correlated electron switch device
US10424379B2 (en) 2017-12-01 2019-09-24 Namlab Ggmbh Polarization-based configurable logic gate
CN108964652B (zh) * 2018-06-13 2021-10-29 宁波大学 一种纳米cmos电路常开缺陷的快速容错方法
CN112271212B (zh) * 2020-10-23 2022-08-05 苏州浪潮智能科技有限公司 一种场效应晶体管模组及场效应晶体管模组的设计方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5792918B2 (ja) * 2000-08-14 2015-10-14 サンディスク・スリー・ディ・リミテッド・ライアビリティ・カンパニーＳａｎｄｉｓｋ ３Ｄ Ｌｌｃ 高集積メモリデバイス
JP4167513B2 (ja) * 2003-03-06 2008-10-15 シャープ株式会社 不揮発性半導体記憶装置
WO2004114315A1 (ja) * 2003-06-25 2004-12-29 Matsushita Electric Industrial Co., Ltd. 不揮発性メモリを駆動する方法
US7259039B2 (en) * 2003-07-09 2007-08-21 Spansion Llc Memory device and methods of using and making the device
US7005665B2 (en) * 2004-03-18 2006-02-28 International Business Machines Corporation Phase change memory cell on silicon-on insulator substrate
JPWO2006095389A1 (ja) * 2005-03-04 2008-08-14 富士通株式会社 磁気メモリ装置並びにその読み出し方法及び書き込み方法
US7369424B2 (en) * 2005-11-09 2008-05-06 Industrial Technology Research Institute Programmable memory cell and operation method
US7741638B2 (en) * 2005-11-23 2010-06-22 Hewlett-Packard Development Company, L.P. Control layer for a nanoscale electronic switching device
US8502198B2 (en) * 2006-04-28 2013-08-06 Hewlett-Packard Development Company, L.P. Switching device and methods for controlling electron tunneling therein
US7420841B2 (en) * 2006-08-30 2008-09-02 Qimonda Ag Memory device and method for transforming between non-power-of-2 levels of multilevel memory cells and 2-level data bits
EP2062306A2 (de) * 2006-08-31 2009-05-27 Interuniversitair Microelektronica Centrum (IMEC) Verfahren zur herstellung einer widerstandsfähigen schaltvorrichtung und daraus erhaltene vorrichtungen
US7851786B2 (en) * 2006-09-01 2010-12-14 Alcatel-Lucent Usa Inc. Programmable polyelectrolyte electrical switches
US8101942B2 (en) * 2006-09-19 2012-01-24 The United States Of America As Represented By The Secretary Of Commerce Self-assembled monolayer based silver switches
JP4995834B2 (ja) * 2006-12-07 2012-08-08 ルネサスエレクトロニクス株式会社 半導体記憶装置

Also Published As

Publication number Publication date
JP2011530252A (ja) 2011-12-15
KR20110047190A (ko) 2011-05-06
EP2151827A1 (de) 2010-02-10
US8431918B2 (en) 2013-04-30
WO2010015363A1 (en) 2010-02-11
EP2151827B1 (de) 2012-02-01
CN102138180A (zh) 2011-07-27
US20110127487A1 (en) 2011-06-02

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