ATE544174T1 - Mim kondensator und verfahren zur herstellung eines mim kondensators - Google Patents

Mim kondensator und verfahren zur herstellung eines mim kondensators

Info

Publication number
ATE544174T1
ATE544174T1 AT07820782T AT07820782T ATE544174T1 AT E544174 T1 ATE544174 T1 AT E544174T1 AT 07820782 T AT07820782 T AT 07820782T AT 07820782 T AT07820782 T AT 07820782T AT E544174 T1 ATE544174 T1 AT E544174T1
Authority
AT
Austria
Prior art keywords
mim capacitor
producing
bottom plates
metal
capacitor
Prior art date
Application number
AT07820782T
Other languages
English (en)
Inventor
Alexis Farcy
Maryline Thomas
Joaquin Torres
Sonarith Chhun
Laurent-Georges Gosset
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE544174T1 publication Critical patent/ATE544174T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/008—Selection of materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
AT07820782T 2006-10-04 2007-10-01 Mim kondensator und verfahren zur herstellung eines mim kondensators ATE544174T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP06301014 2006-10-04
PCT/EP2007/060400 WO2008040706A1 (en) 2006-10-04 2007-10-01 Mim capacitor

Publications (1)

Publication Number Publication Date
ATE544174T1 true ATE544174T1 (de) 2012-02-15

Family

ID=38759992

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07820782T ATE544174T1 (de) 2006-10-04 2007-10-01 Mim kondensator und verfahren zur herstellung eines mim kondensators

Country Status (5)

Country Link
EP (1) EP2074641B1 (de)
JP (1) JP5091242B2 (de)
CN (1) CN101573772B (de)
AT (1) ATE544174T1 (de)
WO (1) WO2008040706A1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8274777B2 (en) 2008-04-08 2012-09-25 Micron Technology, Inc. High aspect ratio openings
EP2289106A4 (de) * 2008-06-13 2014-05-21 Qunano Ab Nanostrukturierter mos-kondensator
US7858506B2 (en) * 2008-06-18 2010-12-28 Micron Technology, Inc. Diodes, and methods of forming diodes
US8268695B2 (en) 2008-08-13 2012-09-18 Micron Technology, Inc. Methods of making capacitors
RU2444078C1 (ru) * 2010-12-23 2012-02-27 Общество с ограниченной ответственностью "БАРГАН ТЕХНОЛОДЖИ" (ООО "БТЕХ") Способ изготовления слоистой наноструктуры для двухобкладочных конденсаторов
GB201207766D0 (en) * 2012-05-03 2012-06-13 Dyson Technology Ltd Dielectric capacitor
GB2501872B8 (en) * 2012-05-03 2022-08-17 Dyson Technology Ltd Coated Structured Surfaces
RU2533010C2 (ru) * 2012-06-19 2014-11-20 Общество с ограниченной ответственностью "Электронные приборы и системы ". Способ изготовления планарного конденсатора повышенной емкости
US9755013B2 (en) * 2015-04-22 2017-09-05 Globalfoundries Inc. High density capacitor structure and method
TWI766072B (zh) * 2017-08-29 2022-06-01 瑞典商斯莫勒科技公司 能量存儲中介層裝置、電子裝置和製造方法
US12033797B2 (en) 2018-10-18 2024-07-09 Smoltek Ab Discrete metal-insulator-metal (MIM) energy storage component and manufacturing method
TW202038266A (zh) * 2018-11-26 2020-10-16 瑞典商斯莫勒科技公司 具有離散的能量儲存構件之半導體組件
JP7151907B2 (ja) 2019-09-25 2022-10-12 株式会社村田製作所 キャパシタおよびその製造方法
US11038011B2 (en) 2019-10-29 2021-06-15 Globalfoundries U.S. Inc. Metal-insulator-metal capacitors including nanofibers
KR20220136357A (ko) * 2020-02-06 2022-10-07 스몰텍 에이비 부품 패드에 연결된 커패시터를 포함하는 배전 네트워크가 있는 전자 시스템
TWI900555B (zh) * 2020-04-17 2025-10-11 瑞典商斯莫勒科技公司 具有分層堆疊的金屬-絕緣體-金屬(mim)能量儲存裝置及製造方法
WO2021229871A1 (ja) * 2020-05-12 2021-11-18 株式会社村田製作所 構造体
WO2022107696A1 (ja) * 2020-11-19 2022-05-27 株式会社村田製作所 キャパシタ
WO2022113843A1 (ja) * 2020-11-27 2022-06-02 株式会社村田製作所 キャパシタ
JP7652339B2 (ja) * 2022-04-26 2025-03-27 株式会社村田製作所 キャパシタおよびキャパシタの製造方法
WO2024095536A1 (ja) * 2022-11-01 2024-05-10 株式会社村田製作所 キャパシタ

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100984585B1 (ko) * 2000-08-22 2010-09-30 프레지던트 앤드 펠로우즈 오브 하버드 칼리지 반도체 성장 방법 및 디바이스 제조 방법
TW506083B (en) * 2001-11-28 2002-10-11 Ind Tech Res Inst Method of using nano-tube to increase semiconductor device capacitance
JP4695817B2 (ja) * 2002-10-23 2011-06-08 富士通株式会社 キャパシタ、半導体記憶装置及び方法
US7163659B2 (en) * 2002-12-03 2007-01-16 Hewlett-Packard Development Company, L.P. Free-standing nanowire sensor and method for detecting an analyte in a fluid
EP1738378A4 (de) 2004-03-18 2010-05-05 Nanosys Inc Auf nanofaseroberflächen basierende kondensatoren

Also Published As

Publication number Publication date
JP2010506391A (ja) 2010-02-25
EP2074641A1 (de) 2009-07-01
CN101573772A (zh) 2009-11-04
JP5091242B2 (ja) 2012-12-05
EP2074641B1 (de) 2012-02-01
CN101573772B (zh) 2011-10-05
WO2008040706A1 (en) 2008-04-10

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