ATE545887T1 - Positive strahlungsempfindliche zusammensetzung und verfahren zur erzeugung eines musters mittels der strahlungsempfindlichen zusammensetzung - Google Patents

Positive strahlungsempfindliche zusammensetzung und verfahren zur erzeugung eines musters mittels der strahlungsempfindlichen zusammensetzung

Info

Publication number
ATE545887T1
ATE545887T1 AT04017179T AT04017179T ATE545887T1 AT E545887 T1 ATE545887 T1 AT E545887T1 AT 04017179 T AT04017179 T AT 04017179T AT 04017179 T AT04017179 T AT 04017179T AT E545887 T1 ATE545887 T1 AT E545887T1
Authority
AT
Austria
Prior art keywords
sensitive composition
radiation sensitive
pattern
generating
positive
Prior art date
Application number
AT04017179T
Other languages
English (en)
Inventor
Kunihiko Kodama
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Application granted granted Critical
Publication of ATE545887T1 publication Critical patent/ATE545887T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12—Sulfonium compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
    • C07D333/02—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings
    • C07D333/46—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings substituted on the ring sulfur atom
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/108—Polyolefin or halogen containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
AT04017179T 2003-07-22 2004-07-21 Positive strahlungsempfindliche zusammensetzung und verfahren zur erzeugung eines musters mittels der strahlungsempfindlichen zusammensetzung ATE545887T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003277359 2003-07-22
JP2004028944A JP4533639B2 (ja) 2003-07-22 2004-02-05 感刺激性組成物、化合物及び該感刺激性組成物を用いたパターン形成方法

Publications (1)

Publication Number Publication Date
ATE545887T1 true ATE545887T1 (de) 2012-03-15

Family

ID=33492502

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04017179T ATE545887T1 (de) 2003-07-22 2004-07-21 Positive strahlungsempfindliche zusammensetzung und verfahren zur erzeugung eines musters mittels der strahlungsempfindlichen zusammensetzung

Country Status (6)

Country Link
US (1) US7202014B2 (de)
EP (1) EP1500977B1 (de)
JP (1) JP4533639B2 (de)
KR (1) KR101051648B1 (de)
AT (1) ATE545887T1 (de)
TW (1) TWI343509B (de)

Families Citing this family (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040128155A1 (en) * 2000-02-15 2004-07-01 Lalitha Vaidyanathan System and method for resolving a dispute in electronic commerce and managing an online dispute resolution process
JP3901997B2 (ja) * 2001-11-27 2007-04-04 富士通株式会社 レジスト材料、レジストパターン及びその製造方法、並びに、半導体装置及びその製造方法
JP4067359B2 (ja) * 2002-08-08 2008-03-26 富士フイルム株式会社 ポジ型レジスト組成物
US20040224251A1 (en) * 2002-09-25 2004-11-11 Kouji Toishi Positive resist composition
US7160669B2 (en) * 2002-10-16 2007-01-09 Sumitomo Chemical Company, Limited Chemical amplification type resist composition
US7452655B2 (en) * 2002-11-05 2008-11-18 Jsr Corporation Acrylic copolymer and radiation-sensitive resin composition
TWI371657B (en) * 2004-02-20 2012-09-01 Fujifilm Corp Positive resist composition for immersion exposure and method of pattern formation with the same
JP2005232388A (ja) * 2004-02-20 2005-09-02 Tokyo Ohka Kogyo Co Ltd 高分子化合物、該高分子化合物を含有するフォトレジスト組成物、およびレジストパターン形成方法
US7700259B2 (en) 2004-04-13 2010-04-20 Tokyo Ohka Kogyo Co., Ltd. Polymer compound, photoresist composition containing such polymer compound, and method for forming resist pattern
WO2005108444A1 (ja) * 2004-05-06 2005-11-17 Jsr Corporation ラクトン系共重合体および感放射線性樹脂組成物
WO2006120896A1 (ja) * 2005-05-02 2006-11-16 Tokyo Ohka Kogyo Co., Ltd. ポジ型レジスト組成物およびレジストパターン形成方法
JP4758679B2 (ja) * 2005-05-18 2011-08-31 パナソニック株式会社 レジスト材料及びそれを用いたパターン形成方法
JP2007003619A (ja) * 2005-06-21 2007-01-11 Fujifilm Holdings Corp 感光性組成物、該感光性組成物を用いたパターン形成方法及び該感光性組成物に用いる化合物
TWI403843B (zh) * 2005-09-13 2013-08-01 Fujifilm Corp 正型光阻組成物及使用它之圖案形成方法
JP4568668B2 (ja) * 2005-09-22 2010-10-27 富士フイルム株式会社 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
CN1955846B (zh) * 2005-10-28 2011-12-07 住友化学株式会社 适合于酸生成剂的盐和含有该盐的化学放大型抗蚀剂组合物
JP2007133185A (ja) * 2005-11-10 2007-05-31 Tokyo Ohka Kogyo Co Ltd 感光性樹脂組成物及びパターン形成方法
JP4881687B2 (ja) 2005-12-09 2012-02-22 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
TWI479266B (zh) 2005-12-27 2015-04-01 Fujifilm Corp 正型光阻組成物及使用它之圖案形成方法
JP5114021B2 (ja) 2006-01-23 2013-01-09 富士フイルム株式会社 パターン形成方法
TWI477909B (zh) 2006-01-24 2015-03-21 Fujifilm Corp 正型感光性組成物及使用它之圖案形成方法
US7862980B2 (en) * 2006-08-02 2011-01-04 Sumitomo Chemical Company, Limited Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same
TWI412888B (zh) * 2006-08-18 2013-10-21 Sumitomo Chemical Co 適合作為酸產生劑之鹽及含有該鹽之化學放大型正光阻組成物
US8530148B2 (en) 2006-12-25 2013-09-10 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
JP4554665B2 (ja) 2006-12-25 2010-09-29 富士フイルム株式会社 パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液
US8637229B2 (en) 2006-12-25 2014-01-28 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
JP4562784B2 (ja) 2007-04-13 2010-10-13 富士フイルム株式会社 パターン形成方法、該パターン形成方法に用いられるレジスト組成物、現像液及びリンス液
US8034547B2 (en) 2007-04-13 2011-10-11 Fujifilm Corporation Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method
US8603733B2 (en) 2007-04-13 2013-12-10 Fujifilm Corporation Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method
JP4558064B2 (ja) 2007-05-15 2010-10-06 富士フイルム株式会社 パターン形成方法
US8476001B2 (en) 2007-05-15 2013-07-02 Fujifilm Corporation Pattern forming method
JPWO2008143301A1 (ja) * 2007-05-23 2010-08-12 Jsr株式会社 パターン形成方法及びそれに用いる樹脂組成物
JP4617337B2 (ja) 2007-06-12 2011-01-26 富士フイルム株式会社 パターン形成方法
US8617794B2 (en) 2007-06-12 2013-12-31 Fujifilm Corporation Method of forming patterns
US8632942B2 (en) 2007-06-12 2014-01-21 Fujifilm Corporation Method of forming patterns
JP4590431B2 (ja) 2007-06-12 2010-12-01 富士フイルム株式会社 パターン形成方法
EP2157477B1 (de) 2007-06-12 2014-08-06 FUJIFILM Corporation Benutzung einer fotolackzusammensetzung für negativ arbeitende entwicklung und verfahren zur strukturbildung mit der fotolackzusammensetzung
JP4998112B2 (ja) * 2007-06-27 2012-08-15 住友化学株式会社 化学増幅型ポジ型レジスト組成物
US8029972B2 (en) * 2007-10-11 2011-10-04 Tokyo Ohka Kogyo Co., Ltd. Resist composition and method of forming resist pattern
JP4961324B2 (ja) * 2007-10-26 2012-06-27 富士フイルム株式会社 電子線、ｘ線又はｅｕｖ用ポジ型レジスト組成物及びそれを用いたパターン形成方法
TWI554841B (zh) * 2007-11-05 2016-10-21 羅門哈斯電子材料有限公司 浸潤式微影組成物及製程
JP5469820B2 (ja) * 2008-03-28 2014-04-16 富士フイルム株式会社 ポジ型レジスト組成物およびそれを用いたパターン形成方法
JP2011209660A (ja) * 2010-03-30 2011-10-20 Fujifilm Corp 感活性光線性又は感放射線性樹脂組成物、並びに、これを用いたレジスト膜及びパターン形成方法
JP2011043839A (ja) * 2010-09-29 2011-03-03 Panasonic Corp レジスト材料及びそれを用いたパターン形成方法
JP5618815B2 (ja) * 2010-12-24 2014-11-05 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、並びに、この組成物を用いた感活性光線性又は感放射線性膜及びパターン形成方法
JP5588943B2 (ja) * 2011-08-22 2014-09-10 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、並びに、該組成物を用いた感活性光線性又は感放射線性膜、及び、パターン形成方法
JP5772727B2 (ja) * 2012-05-31 2015-09-02 信越化学工業株式会社 レジスト組成物及びパターン形成方法
US9017934B2 (en) 2013-03-08 2015-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist defect reduction system and method
US9543147B2 (en) 2013-03-12 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of manufacture
US9245751B2 (en) 2013-03-12 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective layer and method
US9110376B2 (en) 2013-03-12 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US8932799B2 (en) 2013-03-12 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9502231B2 (en) 2013-03-12 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist layer and method
US9354521B2 (en) 2013-03-12 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9175173B2 (en) 2013-03-12 2015-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Unlocking layer and method
US9256128B2 (en) 2013-03-12 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing semiconductor device
US9117881B2 (en) 2013-03-15 2015-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive line system and process
US9341945B2 (en) 2013-08-22 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of formation and use
US10036953B2 (en) 2013-11-08 2018-07-31 Taiwan Semiconductor Manufacturing Company Photoresist system and method
US10095113B2 (en) 2013-12-06 2018-10-09 Taiwan Semiconductor Manufacturing Company Photoresist and method
US9761449B2 (en) 2013-12-30 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gap filling materials and methods
US9599896B2 (en) 2014-03-14 2017-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9581908B2 (en) 2014-05-16 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method
JP6571177B2 (ja) * 2015-05-14 2019-09-04 富士フイルム株式会社 パターン形成方法、電子デバイスの製造方法、及び、感活性光線性又は感放射線性樹脂組成物
US20230288807A1 (en) * 2022-03-11 2023-09-14 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist, method of manufacturing a semiconductor device and method of extreme ultraviolet lithography

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1516511A (en) * 1974-05-02 1978-07-05 Gen Electric Curable epoxide compositions
DE69630959T2 (de) * 1995-08-22 2004-06-03 Nippon Soda Co. Ltd. Neue sulfoniumsalzverbindungen, polymerisierungsinitiator, härtbare zusammensetzung und stärkungsverfahren
JPH09118663A (ja) * 1995-08-22 1997-05-06 Nippon Soda Co Ltd 新規スルホニウム塩化合物、重合開始剤、該化合物を含有する硬化性組成物および硬化方法
JPH09328506A (ja) * 1996-06-10 1997-12-22 Toyo Ink Mfg Co Ltd 重合開始剤、重合開始剤組成物、重合性組成物およびその硬化物
JP4124907B2 (ja) 1999-04-06 2008-07-23 東京応化工業株式会社 ポジ型レジスト組成物
JP3567984B2 (ja) 1999-11-01 2004-09-22 日本電気株式会社 スルホニウム塩化合物、フォトレジスト組成物、およびそれを用いたパターン形成方法
JP2001187780A (ja) * 1999-12-28 2001-07-10 Nec Corp オキソアルキル基を有するスルホニウム塩化合物、レジスト組成物、およびそれを用いたパターン形成方法
JP2001261728A (ja) * 2000-03-21 2001-09-26 Toyo Ink Mfg Co Ltd 重合性組成物
JP2002069110A (ja) * 2000-09-01 2002-03-08 Fuji Photo Film Co Ltd 光重合性組成物
JP4145017B2 (ja) * 2001-02-08 2008-09-03 富士フイルム株式会社 感放射線性レジスト組成物
JP2002236359A (ja) * 2001-02-09 2002-08-23 Fuji Photo Film Co Ltd ポジ型感光性組成物
JP2002255930A (ja) * 2001-03-01 2002-09-11 Fuji Photo Film Co Ltd 光酸発生化合物、及びポジ型レジスト組成物
JP4019645B2 (ja) * 2001-03-12 2007-12-12 東洋インキ製造株式会社 重合性組成物
JP4025039B2 (ja) * 2001-08-21 2007-12-19 富士フイルム株式会社 ポジ型感光性組成物
TWI285650B (en) * 2002-03-25 2007-08-21 Shinetsu Chemical Co Polymers, resist compositions and patterning process
US7510822B2 (en) 2002-04-10 2009-03-31 Fujifilm Corporation Stimulation sensitive composition and compound
JP4271968B2 (ja) * 2003-03-13 2009-06-03 富士フイルム株式会社 ポジ型又はネガ型レジスト組成物及び化合物
JP2004300367A (ja) * 2003-04-01 2004-10-28 Toyo Ink Mfg Co Ltd 光重合開始剤組成物
JP2004300108A (ja) * 2003-04-01 2004-10-28 Toyo Ink Mfg Co Ltd オキシムスルホニウム錯体

Also Published As

Publication number Publication date
TWI343509B (en) 2011-06-11
KR101051648B1 (ko) 2011-07-26
EP1500977A1 (de) 2005-01-26
EP1500977B1 (de) 2012-02-15
US20050019689A1 (en) 2005-01-27
TW200510927A (en) 2005-03-16
JP2005055864A (ja) 2005-03-03
JP4533639B2 (ja) 2010-09-01
KR20050011706A (ko) 2005-01-29
US7202014B2 (en) 2007-04-10

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