ATE545887T1 - Positive strahlungsempfindliche zusammensetzung und verfahren zur erzeugung eines musters mittels der strahlungsempfindlichen zusammensetzung - Google Patents

Positive strahlungsempfindliche zusammensetzung und verfahren zur erzeugung eines musters mittels der strahlungsempfindlichen zusammensetzung

Info

Publication number
ATE545887T1
ATE545887T1 AT04017179T AT04017179T ATE545887T1 AT E545887 T1 ATE545887 T1 AT E545887T1 AT 04017179 T AT04017179 T AT 04017179T AT 04017179 T AT04017179 T AT 04017179T AT E545887 T1 ATE545887 T1 AT E545887T1
Authority
AT
Austria
Prior art keywords
sensitive composition
radiation sensitive
pattern
generating
positive
Prior art date
Application number
AT04017179T
Other languages
English (en)
Inventor
Kunihiko Kodama
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Application granted granted Critical
Publication of ATE545887T1 publication Critical patent/ATE545887T1/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12Sulfonium compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D333/00Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
    • C07D333/02Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings
    • C07D333/46Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings substituted on the ring sulfur atom
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0046Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/106Binder containing
    • Y10S430/108Polyolefin or halogen containing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/114Initiator containing
    • Y10S430/122Sulfur compound containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
AT04017179T 2003-07-22 2004-07-21 Positive strahlungsempfindliche zusammensetzung und verfahren zur erzeugung eines musters mittels der strahlungsempfindlichen zusammensetzung ATE545887T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003277359 2003-07-22
JP2004028944A JP4533639B2 (ja) 2003-07-22 2004-02-05 感刺激性組成物、化合物及び該感刺激性組成物を用いたパターン形成方法

Publications (1)

Publication Number Publication Date
ATE545887T1 true ATE545887T1 (de) 2012-03-15

Family

ID=33492502

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04017179T ATE545887T1 (de) 2003-07-22 2004-07-21 Positive strahlungsempfindliche zusammensetzung und verfahren zur erzeugung eines musters mittels der strahlungsempfindlichen zusammensetzung

Country Status (6)

Country Link
US (1) US7202014B2 (de)
EP (1) EP1500977B1 (de)
JP (1) JP4533639B2 (de)
KR (1) KR101051648B1 (de)
AT (1) ATE545887T1 (de)
TW (1) TWI343509B (de)

Families Citing this family (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040128155A1 (en) * 2000-02-15 2004-07-01 Lalitha Vaidyanathan System and method for resolving a dispute in electronic commerce and managing an online dispute resolution process
JP3901997B2 (ja) * 2001-11-27 2007-04-04 富士通株式会社 レジスト材料、レジストパターン及びその製造方法、並びに、半導体装置及びその製造方法
JP4067359B2 (ja) * 2002-08-08 2008-03-26 富士フイルム株式会社 ポジ型レジスト組成物
US20040224251A1 (en) * 2002-09-25 2004-11-11 Kouji Toishi Positive resist composition
US7160669B2 (en) * 2002-10-16 2007-01-09 Sumitomo Chemical Company, Limited Chemical amplification type resist composition
DE60334249D1 (de) * 2002-11-05 2010-10-28 Jsr Corp Acrylcopolymer und strahlungsempfindliche harzzusammensetzung
JP2005232388A (ja) * 2004-02-20 2005-09-02 Tokyo Ohka Kogyo Co Ltd 高分子化合物、該高分子化合物を含有するフォトレジスト組成物、およびレジストパターン形成方法
TWI371657B (en) * 2004-02-20 2012-09-01 Fujifilm Corp Positive resist composition for immersion exposure and method of pattern formation with the same
KR100848031B1 (ko) 2004-04-13 2008-07-23 도오꾜오까고오교 가부시끼가이샤 고분자 화합물, 이 고분자 화합물을 함유하는 포토레지스트조성물, 및 레지스트 패턴 형성 방법
EP1757628A4 (de) * 2004-05-06 2008-04-30 Jsr Corp Lactoncopolymer und strahlungsempfindliche harzzusammensetzung
US7816072B2 (en) * 2005-05-02 2010-10-19 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition and method for forming resist pattern
JP4758679B2 (ja) * 2005-05-18 2011-08-31 パナソニック株式会社 レジスト材料及びそれを用いたパターン形成方法
JP2007003619A (ja) * 2005-06-21 2007-01-11 Fujifilm Holdings Corp 感光性組成物、該感光性組成物を用いたパターン形成方法及び該感光性組成物に用いる化合物
TWI403843B (zh) * 2005-09-13 2013-08-01 Fujifilm Corp 正型光阻組成物及使用它之圖案形成方法
JP4568668B2 (ja) * 2005-09-22 2010-10-27 富士フイルム株式会社 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
US7301047B2 (en) * 2005-10-28 2007-11-27 Sumitomo Chemical Company, Limited Salt suitable for an acid generator and a chemically amplified resist composition containing the same
JP2007133185A (ja) * 2005-11-10 2007-05-31 Tokyo Ohka Kogyo Co Ltd 感光性樹脂組成物及びパターン形成方法
JP4881687B2 (ja) 2005-12-09 2012-02-22 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
TWI479266B (zh) 2005-12-27 2015-04-01 Fujifilm Corp 正型光阻組成物及使用它之圖案形成方法
JP5114021B2 (ja) * 2006-01-23 2013-01-09 富士フイルム株式会社 パターン形成方法
TWI477909B (zh) * 2006-01-24 2015-03-21 Fujifilm Corp 正型感光性組成物及使用它之圖案形成方法
TWI399617B (zh) * 2006-08-02 2013-06-21 Sumitomo Chemical Co 適用為酸產生劑之鹽及含該鹽之化學放大正型阻劑組成物
TWI412888B (zh) * 2006-08-18 2013-10-21 Sumitomo Chemical Co 適合作為酸產生劑之鹽及含有該鹽之化學放大型正光阻組成物
US8530148B2 (en) 2006-12-25 2013-09-10 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
US8637229B2 (en) 2006-12-25 2014-01-28 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
JP4554665B2 (ja) 2006-12-25 2010-09-29 富士フイルム株式会社 パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液
WO2008129964A1 (ja) 2007-04-13 2008-10-30 Fujifilm Corporation パターン形成方法、該パターン形成方法に用いられるレジスト組成物、現像液及びリンス液
US8603733B2 (en) 2007-04-13 2013-12-10 Fujifilm Corporation Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method
US8034547B2 (en) 2007-04-13 2011-10-11 Fujifilm Corporation Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method
US8476001B2 (en) 2007-05-15 2013-07-02 Fujifilm Corporation Pattern forming method
US7985534B2 (en) 2007-05-15 2011-07-26 Fujifilm Corporation Pattern forming method
KR101597366B1 (ko) * 2007-05-23 2016-02-24 제이에스알 가부시끼가이샤 패턴 형성 방법 및 그 방법에 사용하는 수지 조성물
US8617794B2 (en) 2007-06-12 2013-12-31 Fujifilm Corporation Method of forming patterns
KR20130114280A (ko) 2007-06-12 2013-10-16 후지필름 가부시키가이샤 네가티브 톤 현상용 레지스트 조성물 및 이것을 사용한 패턴형성방법
JP4617337B2 (ja) * 2007-06-12 2011-01-26 富士フイルム株式会社 パターン形成方法
JP4590431B2 (ja) 2007-06-12 2010-12-01 富士フイルム株式会社 パターン形成方法
US8632942B2 (en) 2007-06-12 2014-01-21 Fujifilm Corporation Method of forming patterns
JP4998112B2 (ja) * 2007-06-27 2012-08-15 住友化学株式会社 化学増幅型ポジ型レジスト組成物
US8029972B2 (en) * 2007-10-11 2011-10-04 Tokyo Ohka Kogyo Co., Ltd. Resist composition and method of forming resist pattern
JP4961324B2 (ja) * 2007-10-26 2012-06-27 富士フイルム株式会社 電子線、x線又はeuv用ポジ型レジスト組成物及びそれを用いたパターン形成方法
EP2056162B1 (de) * 2007-11-05 2016-05-04 Rohm and Haas Electronic Materials LLC Verfahren für Immersionslithografie
JP5469820B2 (ja) * 2008-03-28 2014-04-16 富士フイルム株式会社 ポジ型レジスト組成物およびそれを用いたパターン形成方法
JP2011209660A (ja) * 2010-03-30 2011-10-20 Fujifilm Corp 感活性光線性又は感放射線性樹脂組成物、並びに、これを用いたレジスト膜及びパターン形成方法
JP2011043839A (ja) * 2010-09-29 2011-03-03 Panasonic Corp レジスト材料及びそれを用いたパターン形成方法
JP5618815B2 (ja) * 2010-12-24 2014-11-05 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、並びに、この組成物を用いた感活性光線性又は感放射線性膜及びパターン形成方法
JP5588943B2 (ja) * 2011-08-22 2014-09-10 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、並びに、該組成物を用いた感活性光線性又は感放射線性膜、及び、パターン形成方法
JP5772727B2 (ja) * 2012-05-31 2015-09-02 信越化学工業株式会社 レジスト組成物及びパターン形成方法
US9017934B2 (en) 2013-03-08 2015-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist defect reduction system and method
US9110376B2 (en) 2013-03-12 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9543147B2 (en) 2013-03-12 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of manufacture
US9245751B2 (en) 2013-03-12 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective layer and method
US9502231B2 (en) 2013-03-12 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist layer and method
US9175173B2 (en) 2013-03-12 2015-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Unlocking layer and method
US9256128B2 (en) 2013-03-12 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing semiconductor device
US8932799B2 (en) 2013-03-12 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9354521B2 (en) 2013-03-12 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9117881B2 (en) 2013-03-15 2015-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive line system and process
US9341945B2 (en) 2013-08-22 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of formation and use
US10036953B2 (en) 2013-11-08 2018-07-31 Taiwan Semiconductor Manufacturing Company Photoresist system and method
US10095113B2 (en) 2013-12-06 2018-10-09 Taiwan Semiconductor Manufacturing Company Photoresist and method
US9761449B2 (en) 2013-12-30 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gap filling materials and methods
US9599896B2 (en) 2014-03-14 2017-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9581908B2 (en) 2014-05-16 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method
JP6571177B2 (ja) * 2015-05-14 2019-09-04 富士フイルム株式会社 パターン形成方法、電子デバイスの製造方法、及び、感活性光線性又は感放射線性樹脂組成物
US20230288807A1 (en) * 2022-03-11 2023-09-14 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist, method of manufacturing a semiconductor device and method of extreme ultraviolet lithography

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1516512A (en) * 1974-05-02 1978-07-05 Gen Electric Chalcogenium salts
WO1997008141A1 (fr) * 1995-08-22 1997-03-06 Nippon Soda Co., Ltd. Nouveaux composes a base de sel de sulfonium, initiateur de polymerisation, composition solidifiable et procede de durcissement
JPH09118663A (ja) * 1995-08-22 1997-05-06 Nippon Soda Co Ltd 新規スルホニウム塩化合物、重合開始剤、該化合物を含有する硬化性組成物および硬化方法
JPH09328506A (ja) * 1996-06-10 1997-12-22 Toyo Ink Mfg Co Ltd 重合開始剤、重合開始剤組成物、重合性組成物およびその硬化物
JP4124907B2 (ja) 1999-04-06 2008-07-23 東京応化工業株式会社 ポジ型レジスト組成物
JP3567984B2 (ja) 1999-11-01 2004-09-22 日本電気株式会社 スルホニウム塩化合物、フォトレジスト組成物、およびそれを用いたパターン形成方法
JP2001187780A (ja) * 1999-12-28 2001-07-10 Nec Corp オキソアルキル基を有するスルホニウム塩化合物、レジスト組成物、およびそれを用いたパターン形成方法
JP2001261728A (ja) * 2000-03-21 2001-09-26 Toyo Ink Mfg Co Ltd 重合性組成物
JP2002069110A (ja) * 2000-09-01 2002-03-08 Fuji Photo Film Co Ltd 光重合性組成物
JP4145017B2 (ja) * 2001-02-08 2008-09-03 富士フイルム株式会社 感放射線性レジスト組成物
JP2002236359A (ja) * 2001-02-09 2002-08-23 Fuji Photo Film Co Ltd ポジ型感光性組成物
JP2002255930A (ja) * 2001-03-01 2002-09-11 Fuji Photo Film Co Ltd 光酸発生化合物、及びポジ型レジスト組成物
JP4019645B2 (ja) * 2001-03-12 2007-12-12 東洋インキ製造株式会社 重合性組成物
JP4025039B2 (ja) * 2001-08-21 2007-12-19 富士フイルム株式会社 ポジ型感光性組成物
KR100679060B1 (ko) * 2002-03-25 2007-02-05 신에쓰 가가꾸 고교 가부시끼가이샤 중합체, 레지스트 조성물 및 패턴 형성 방법
US7510822B2 (en) 2002-04-10 2009-03-31 Fujifilm Corporation Stimulation sensitive composition and compound
JP4271968B2 (ja) * 2003-03-13 2009-06-03 富士フイルム株式会社 ポジ型又はネガ型レジスト組成物及び化合物
JP2004300367A (ja) * 2003-04-01 2004-10-28 Toyo Ink Mfg Co Ltd 光重合開始剤組成物
JP2004300108A (ja) * 2003-04-01 2004-10-28 Toyo Ink Mfg Co Ltd オキシムスルホニウム錯体

Also Published As

Publication number Publication date
KR101051648B1 (ko) 2011-07-26
EP1500977A1 (de) 2005-01-26
JP2005055864A (ja) 2005-03-03
US20050019689A1 (en) 2005-01-27
US7202014B2 (en) 2007-04-10
KR20050011706A (ko) 2005-01-29
JP4533639B2 (ja) 2010-09-01
TWI343509B (en) 2011-06-11
EP1500977B1 (de) 2012-02-15
TW200510927A (en) 2005-03-16

Similar Documents

Publication Publication Date Title
TW200510927A (en) Stimulus-sensitive composition, compound and pattern formation method using the stimulation-sensitive composition
ATE393413T1 (de) Positive lichtempfindliche zusammensetzung und verfahren zur strukturformung damit
TW200516349A (en) Photosensitive composition and pattern forming method using the same
DE60306433D1 (de) Verfahren zur Vermeidung der Blockierung mittels des Empfangenzustands der HARQ Prozesse
DE602004010249D1 (de) Methode zur Erzeugung eines Musters mittels einer Fotomaske, und Methode zur Erzeugung der entsprechenden Maskendaten
TW200734822A (en) Positive resist composition and pattern forming method using the same
CY1105386T1 (el) Βενζοϋλοσουλφοναμιδια και σουλφονυλβενζαμιδινες για χρηση σαν παραγοντες κατα του ογκου
DE602004016353D1 (de) Dentalzusammensetzungen und verfahren mit arylsulfinatsalzen
ATE348712T1 (de) Laser markierbare zusammensetzungen und verfahren zur erzeugung eines bildes durch laser
DE60237184D1 (de) Verfahren zur Erzeugung von Bewegungen
DE60335743D1 (de) Verbindungen und verfahren zur erhöhung der neurogenese
DE602004031134D1 (de) Pharmazeutische zusammensetzungen und verfahren zur verwendung von levodopa und carbidopa
ATE519507T1 (de) Verfahren und vorrichtung zur dekontamination durch strahlung eines produkts
ATE556711T1 (de) Verfahren zur verbesserung der hautqualität
EP1487428A4 (de) Amino-substituierte (e)-2,6-dialkoxystyryl 4-substituierte benzylsulfone zur behandlung von proliferierenden erkrankungen
ATE552236T1 (de) Verbindungen, zusammensetzungen und verfahren zur behandlung von herzinsuffizienz
ATE457678T1 (de) Gerät und verfahren zur regulierung der beleuchtung oder bildverstärkung in einer bildgebenden vorrichtung in vivo
CY1110295T1 (el) Trans-9,10-δεϋδροεποθιλονη c και d, αναλογα αυτων και μεθοδοι παρασκευης
ATE528690T1 (de) Negative resistzusammensetzung und verfahren zur strukturformung damit
ATE511678T1 (de) Verfahren zur verschleierung von datenstrukturen mittels deterministischer natürlicher datensubstitution
BR0308813A (pt) Tratamento de tuberculose usando derivados de pleuromutilina
DE602004004519D1 (de) Austraglösung, verfahren zur erzeugung von mustern sowie verfahren zur herstellung eines elektronischen gerätes unter verwendung dieser lösung, und elektronisches gerät
ATE533219T1 (de) Verfahren und vorrichtung zum beglaubigen einer stromversorgung
ATE366045T1 (de) Verwendung von 4-aminopyrimidinen zur antimikrobiellen behandlung von oberflächen
ATE533086T1 (de) Lichtempfindliche zusammensetzung und verfahren zur strukturformung damit