ATE546759T1 - Reflexionsmaskenrohling für euv-lithographie - Google Patents

Reflexionsmaskenrohling für euv-lithographie

Info

Publication number
ATE546759T1
ATE546759T1 AT07742437T AT07742437T ATE546759T1 AT E546759 T1 ATE546759 T1 AT E546759T1 AT 07742437 T AT07742437 T AT 07742437T AT 07742437 T AT07742437 T AT 07742437T AT E546759 T1 ATE546759 T1 AT E546759T1
Authority
AT
Austria
Prior art keywords
mask blank
absorber layer
euv lithography
light
euv
Prior art date
Application number
AT07742437T
Other languages
English (en)
Inventor
Kazuyuki Hayashi
Kazuo Kadowaki
Takashi Sugiyama
Masaki Mikami
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Application granted granted Critical
Publication of ATE546759T1 publication Critical patent/ATE546759T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
AT07742437T 2006-04-21 2007-04-19 Reflexionsmaskenrohling für euv-lithographie ATE546759T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006117992 2006-04-21
PCT/JP2007/059002 WO2007123263A1 (en) 2006-04-21 2007-04-19 Reflective mask blank for euv lithography

Publications (1)

Publication Number Publication Date
ATE546759T1 true ATE546759T1 (de) 2012-03-15

Family

ID=38162280

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07742437T ATE546759T1 (de) 2006-04-21 2007-04-19 Reflexionsmaskenrohling für euv-lithographie

Country Status (6)

Country Link
US (1) US7906259B2 (de)
EP (1) EP2010963B1 (de)
KR (1) KR101335077B1 (de)
AT (1) ATE546759T1 (de)
TW (1) TWI444757B (de)
WO (1) WO2007123263A1 (de)

Families Citing this family (33)

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Publication number Priority date Publication date Assignee Title
TWI444757B (zh) 2006-04-21 2014-07-11 旭硝子股份有限公司 用於極紫外光（ｅｕｖ）微影術之反射性空白光罩
JP5040996B2 (ja) * 2007-04-17 2012-10-03 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
ES2351237T3 (es) * 2007-09-17 2011-02-01 The Tapemark Company Envase de distribucion con aplicador.
JP5348127B2 (ja) 2008-03-18 2013-11-20 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
WO2009154238A1 (ja) * 2008-06-19 2009-12-23 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
JP5541159B2 (ja) * 2008-07-14 2014-07-09 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、および、ｅｕｖリソグラフィ用反射型マスク
KR20110090887A (ko) 2008-10-30 2011-08-10 아사히 가라스 가부시키가이샤 Ｅｕｖ 리소그래피용 반사형 마스크 블랭크
CN102203906B (zh) 2008-10-30 2013-10-09 旭硝子株式会社 Euv光刻用反射型掩模坯料
US8546047B2 (en) * 2008-12-26 2013-10-01 Hoya Corporation Reflective mask blank and method of manufacturing a reflective mask
JP5638769B2 (ja) * 2009-02-04 2014-12-10 Hoya株式会社 反射型マスクブランクの製造方法及び反射型マスクの製造方法
KR101702682B1 (ko) * 2009-04-16 2017-02-06 호야 가부시키가이샤 마스크 블랭크 및 전사용 마스크
EP2453464A1 (de) 2009-07-08 2012-05-16 Asahi Glass Company, Limited Reflexionsmaskenrohling für die euv-lithographie
TWI392774B (zh) * 2009-09-17 2013-04-11 國立臺灣大學 維持材料表面平整度的製作方法
EP2509102A1 (de) 2009-12-04 2012-10-10 Asahi Glass Company, Limited Optisches element für die euv-lithographie und verfahren zur herstellung eines auf einer reflektierenden schicht aufgebrachten substrats für die euv-lithographie
WO2011071086A1 (ja) 2009-12-09 2011-06-16 旭硝子株式会社 Ｅｕｖリソグラフィ用光学部材
TW201131615A (en) 2009-12-09 2011-09-16 Asahi Glass Co Ltd Multilayer mirror for euv lithography and process for producing same
KR20130007537A (ko) 2010-03-02 2013-01-18 아사히 가라스 가부시키가이샤 Ｅｕｖ 리소그래피용 반사형 마스크 블랭크 및 그 제조 방법
EP2600388B1 (de) 2010-07-27 2014-10-08 Asahi Glass Company, Limited Substrat mit einer reflektierenden schicht für euv-lithographie sowie reflektierender maskenrohling für euv-lithographie
JP5708651B2 (ja) 2010-08-24 2015-04-30 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
JP5971122B2 (ja) 2011-02-01 2016-08-17 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
EP2763158A4 (de) * 2011-09-28 2015-12-30 Toppan Printing Co Ltd Reflektierender maskenrohling, reflektierende maske und verfahren zur herstellung eines reflektierenden maskenrohlings und einer reflektierenden maske
US10838124B2 (en) 2012-01-19 2020-11-17 Supriya Jaiswal Materials, components, and methods for use with extreme ultraviolet radiation in lithography and other applications
JP6060636B2 (ja) 2012-01-30 2017-01-18 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、および、ｅｕｖリソグラフィ用反射型マスク
JP6069919B2 (ja) 2012-07-11 2017-02-01 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランクおよびその製造方法、ならびに該マスクブランク用の反射層付基板およびその製造方法
US9805053B1 (en) 2013-02-25 2017-10-31 EMC IP Holding Company LLC Pluggable storage system for parallel query engines
JP6287099B2 (ja) 2013-05-31 2018-03-07 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
US9075316B2 (en) * 2013-11-15 2015-07-07 Globalfoundries Inc. EUV mask for use during EUV photolithography processes
WO2017186486A1 (en) 2016-04-25 2017-11-02 Asml Netherlands B.V. A membrane for euv lithography
US10345695B2 (en) * 2016-11-30 2019-07-09 Taiwan Semiconductor Manufacturing Co., Ltd. Extreme ultraviolet alignment marks
US10890842B2 (en) * 2017-09-21 2021-01-12 AGC Inc. Reflective mask blank, reflective mask, and process for producing reflective mask blank
CN112997116B (zh) * 2018-11-15 2025-02-21 科盛德光掩模株式会社 反射型光掩模坯以及反射型光掩模
KR20220006543A (ko) * 2019-05-21 2022-01-17 에이지씨 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크
US11531262B2 (en) * 2019-12-30 2022-12-20 Taiwan Semiconductor Manufacturing Co., Ltd. Mask blanks and methods for depositing layers on mask blank

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US329594A (en) * 1885-11-03 Btjdolf eustebholz
US349494A (en) * 1886-09-21 James ii
US7390596B2 (en) * 2002-04-11 2008-06-24 Hoya Corporation Reflection type mask blank and reflection type mask and production methods for them
JP4163038B2 (ja) 2002-04-15 2008-10-08 Ｈｏｙａ株式会社 反射型マスクブランク及び反射型マスク並びに半導体の製造方法
JP4212025B2 (ja) 2002-07-04 2009-01-21 Ｈｏｙａ株式会社 反射型マスクブランクス及び反射型マスク並びに反射型マスクの製造方法
KR20070054651A (ko) * 2004-09-17 2007-05-29 아사히 가라스 가부시키가이샤 Ｅｕｖ 리소그래피용 반사형 마스크 블랭크스 및 그 제조방법
TWI444757B (zh) 2006-04-21 2014-07-11 旭硝子股份有限公司 用於極紫外光（ｅｕｖ）微影術之反射性空白光罩
WO2008084680A1 (ja) 2006-12-27 2008-07-17 Asahi Glass Company, Limited Ｅｕｖリソグラフィ用反射型マスクブランク
WO2008093534A1 (ja) 2007-01-31 2008-08-07 Asahi Glass Company, Limited Ｅｕｖリソグラフィ用反射型マスクブランク

Also Published As

Publication number Publication date
WO2007123263A1 (en) 2007-11-01
TWI444757B (zh) 2014-07-11
EP2010963A1 (de) 2009-01-07
KR20080113422A (ko) 2008-12-30
TW200807144A (en) 2008-02-01
US20090011341A1 (en) 2009-01-08
US7906259B2 (en) 2011-03-15
KR101335077B1 (ko) 2013-12-03
EP2010963B1 (de) 2012-02-22

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