ATE546759T1 - Reflexionsmaskenrohling für euv-lithographie - Google Patents

Reflexionsmaskenrohling für euv-lithographie

Info

Publication number
ATE546759T1
ATE546759T1 AT07742437T AT07742437T ATE546759T1 AT E546759 T1 ATE546759 T1 AT E546759T1 AT 07742437 T AT07742437 T AT 07742437T AT 07742437 T AT07742437 T AT 07742437T AT E546759 T1 ATE546759 T1 AT E546759T1
Authority
AT
Austria
Prior art keywords
mask blank
absorber layer
euv lithography
light
euv
Prior art date
Application number
AT07742437T
Other languages
English (en)
Inventor
Kazuyuki Hayashi
Kazuo Kadowaki
Takashi Sugiyama
Masaki Mikami
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Application granted granted Critical
Publication of ATE546759T1 publication Critical patent/ATE546759T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
AT07742437T 2006-04-21 2007-04-19 Reflexionsmaskenrohling für euv-lithographie ATE546759T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006117992 2006-04-21
PCT/JP2007/059002 WO2007123263A1 (en) 2006-04-21 2007-04-19 Reflective mask blank for euv lithography

Publications (1)

Publication Number Publication Date
ATE546759T1 true ATE546759T1 (de) 2012-03-15

Family

ID=38162280

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07742437T ATE546759T1 (de) 2006-04-21 2007-04-19 Reflexionsmaskenrohling für euv-lithographie

Country Status (6)

Country Link
US (1) US7906259B2 (de)
EP (1) EP2010963B1 (de)
KR (1) KR101335077B1 (de)
AT (1) ATE546759T1 (de)
TW (1) TWI444757B (de)
WO (1) WO2007123263A1 (de)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI444757B (zh) 2006-04-21 2014-07-11 旭硝子股份有限公司 用於極紫外光（ｅｕｖ）微影術之反射性空白光罩
JP5040996B2 (ja) * 2007-04-17 2012-10-03 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
ES2351237T3 (es) * 2007-09-17 2011-02-01 The Tapemark Company Envase de distribucion con aplicador.
EP2256789B1 (de) * 2008-03-18 2012-07-04 Asahi Glass Company, Limited Reflexionsmaskenrohling für euv-lithographie
JP5067483B2 (ja) * 2008-06-19 2012-11-07 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
KR20110050427A (ko) * 2008-07-14 2011-05-13 아사히 가라스 가부시키가이샤 Ｅｕｖ 리소그래피용 반사형 마스크 블랭크 및 ｅｕｖ 리소그래피용 반사형 마스크
CN102203907B (zh) 2008-10-30 2014-03-26 旭硝子株式会社 Euv光刻用反射型掩模基板
JP5348141B2 (ja) 2008-10-30 2013-11-20 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
KR101707591B1 (ko) * 2008-12-26 2017-02-16 호야 가부시키가이샤 반사형 마스크 블랭크 및 반사형 마스크의 제조 방법
JP5638769B2 (ja) * 2009-02-04 2014-12-10 Hoya株式会社 反射型マスクブランクの製造方法及び反射型マスクの製造方法
WO2010119811A1 (ja) * 2009-04-16 2010-10-21 Hoya株式会社 マスクブランク及び転写用マスク並びに膜緻密性評価方法
WO2011004850A1 (ja) 2009-07-08 2011-01-13 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
TWI392774B (zh) * 2009-09-17 2013-04-11 國立臺灣大學 維持材料表面平整度的製作方法
TWI467318B (zh) 2009-12-04 2015-01-01 旭硝子股份有限公司 An optical member for EUV microfilm, and a method for manufacturing a substrate with a reflective layer for EUV microfilm
TWI464529B (zh) 2009-12-09 2014-12-11 旭硝子股份有限公司 EUV microfilm with anti-reflective substrate, EUV microsurgical reflective mask substrate, EUV microsurgical reflective mask and manufacturing method of the reflective substrate
WO2011071086A1 (ja) 2009-12-09 2011-06-16 旭硝子株式会社 Ｅｕｖリソグラフィ用光学部材
KR20130007537A (ko) 2010-03-02 2013-01-18 아사히 가라스 가부시키가이샤 Ｅｕｖ 리소그래피용 반사형 마스크 블랭크 및 그 제조 방법
KR20130111524A (ko) 2010-07-27 2013-10-10 아사히 가라스 가부시키가이샤 Ｅｕｖ 리소그래피용 반사층 형성 기판, 및 ｅｕｖ 리소그래피용 반사형 마스크 블랭크
WO2012026463A1 (ja) 2010-08-24 2012-03-01 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
WO2012105508A1 (ja) 2011-02-01 2012-08-09 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
CN103858210B (zh) * 2011-09-28 2016-07-06 凸版印刷株式会社 反射型掩模坯、反射型掩模及它们的制造方法
US10838124B2 (en) 2012-01-19 2020-11-17 Supriya Jaiswal Materials, components, and methods for use with extreme ultraviolet radiation in lithography and other applications
JP6060636B2 (ja) 2012-01-30 2017-01-18 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、および、ｅｕｖリソグラフィ用反射型マスク
JP6069919B2 (ja) 2012-07-11 2017-02-01 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランクおよびその製造方法、ならびに該マスクブランク用の反射層付基板およびその製造方法
US9454573B1 (en) 2013-02-25 2016-09-27 Emc Corporation Parallel processing database system with a shared metadata store
JP6287099B2 (ja) 2013-05-31 2018-03-07 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
US9075316B2 (en) * 2013-11-15 2015-07-07 Globalfoundries Inc. EUV mask for use during EUV photolithography processes
CA3021916A1 (en) * 2016-04-25 2017-11-02 Asml Netherlands B.V. A membrane for euv lithography
US10345695B2 (en) * 2016-11-30 2019-07-09 Taiwan Semiconductor Manufacturing Co., Ltd. Extreme ultraviolet alignment marks
US10890842B2 (en) 2017-09-21 2021-01-12 AGC Inc. Reflective mask blank, reflective mask, and process for producing reflective mask blank
EP3882698A4 (de) * 2018-11-15 2022-08-17 Toppan Printing Co., Ltd. Rohling einer reflektierenden fotomaske und reflektierende fotomaske
KR20220006543A (ko) * 2019-05-21 2022-01-17 에이지씨 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크
US11531262B2 (en) * 2019-12-30 2022-12-20 Taiwan Semiconductor Manufacturing Co., Ltd. Mask blanks and methods for depositing layers on mask blank

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US349494A (en) * 1886-09-21 James ii
US329594A (en) * 1885-11-03 Btjdolf eustebholz
EP2317383A3 (de) * 2002-04-11 2011-12-28 HOYA Corporation Reflektiver Maskenrohling, reflektive Maske und Verfahren zur Herstellung des Maskenrohlings und der Maske
JP4163038B2 (ja) 2002-04-15 2008-10-08 Ｈｏｙａ株式会社 反射型マスクブランク及び反射型マスク並びに半導体の製造方法
JP4212025B2 (ja) 2002-07-04 2009-01-21 Ｈｏｙａ株式会社 反射型マスクブランクス及び反射型マスク並びに反射型マスクの製造方法
EP1791168A1 (de) * 2004-09-17 2007-05-30 Asahi Glass Company, Limited Reflektierender maskenrohling für die euv-lithographie und herstellungsverfahren dafür
TWI444757B (zh) 2006-04-21 2014-07-11 旭硝子股份有限公司 用於極紫外光（ｅｕｖ）微影術之反射性空白光罩
ATE526679T1 (de) * 2006-12-27 2011-10-15 Asahi Glass Co Ltd Reflexionsmaskenrohling für euv-lithographie
JP5018789B2 (ja) * 2007-01-31 2012-09-05 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク

Also Published As

Publication number Publication date
US7906259B2 (en) 2011-03-15
EP2010963A1 (de) 2009-01-07
KR20080113422A (ko) 2008-12-30
KR101335077B1 (ko) 2013-12-03
TWI444757B (zh) 2014-07-11
TW200807144A (en) 2008-02-01
EP2010963B1 (de) 2012-02-22
WO2007123263A1 (en) 2007-11-01
US20090011341A1 (en) 2009-01-08

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