ATE546869T1 - Oberflächenemissionslaser - Google Patents

Oberflächenemissionslaser

Info

Publication number
ATE546869T1
ATE546869T1 AT08011937T AT08011937T ATE546869T1 AT E546869 T1 ATE546869 T1 AT E546869T1 AT 08011937 T AT08011937 T AT 08011937T AT 08011937 T AT08011937 T AT 08011937T AT E546869 T1 ATE546869 T1 AT E546869T1
Authority
AT
Austria
Prior art keywords
reflection mirror
semiconductor layer
refractive index
substrate
low refractive
Prior art date
Application number
AT08011937T
Other languages
English (en)
Inventor
Mitsuhiro Ikuta
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE546869T1 publication Critical patent/ATE546869T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0655—Single transverse or lateral mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H01S5/18372—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials by native oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/2086—Methods of obtaining the confinement using special etching techniques lateral etch control, e.g. mask induced

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
AT08011937T 2007-07-31 2008-07-02 Oberflächenemissionslaser ATE546869T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007198485A JP4350774B2 (ja) 2007-07-31 2007-07-31 面発光レーザ

Publications (1)

Publication Number Publication Date
ATE546869T1 true ATE546869T1 (de) 2012-03-15

Family

ID=39970717

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08011937T ATE546869T1 (de) 2007-07-31 2008-07-02 Oberflächenemissionslaser

Country Status (5)

Country Link
US (2) US7697586B2 (de)
EP (1) EP2020712B1 (de)
JP (1) JP4350774B2 (de)
CN (1) CN101359807B (de)
AT (1) ATE546869T1 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4906704B2 (ja) * 2007-02-08 2012-03-28 キヤノン株式会社 面発光レーザ、及び面発光レーザを備えた発光装置
JP4347369B2 (ja) * 2007-07-31 2009-10-21 キヤノン株式会社 面発光レーザの製造方法
JP4350774B2 (ja) * 2007-07-31 2009-10-21 キヤノン株式会社 面発光レーザ
JP4709259B2 (ja) * 2007-10-12 2011-06-22 キヤノン株式会社 面発光レーザ
JP5084540B2 (ja) * 2008-02-06 2012-11-28 キヤノン株式会社 垂直共振器型面発光レーザ
JP5171318B2 (ja) * 2008-03-05 2013-03-27 キヤノン株式会社 面発光レーザアレイ
JP5388666B2 (ja) * 2008-04-21 2014-01-15 キヤノン株式会社 面発光レーザ
JP5106487B2 (ja) * 2008-07-31 2012-12-26 キヤノン株式会社 面発光レーザの製造方法及び面発光レーザアレイの製造方法、該製造方法による面発光レーザアレイを備えている光学機器
JP4639249B2 (ja) * 2008-07-31 2011-02-23 キヤノン株式会社 面発光レーザの製造方法及び面発光レーザアレイの製造方法、面発光レーザ及び面発光レーザアレイ、面発光レーザアレイを備えている光学機器
JP5038371B2 (ja) * 2008-09-26 2012-10-03 キヤノン株式会社 面発光レーザの製造方法
DE102009001505A1 (de) * 2008-11-21 2010-05-27 Vertilas Gmbh Oberflächenemittierende Halbleiterlaserdiode und Verfahren zur Herstellung derselben
JP5505827B2 (ja) * 2009-02-23 2014-05-28 独立行政法人情報通信研究機構 光導波路型半導体
US7952772B2 (en) 2009-05-08 2011-05-31 Honeywell International Inc. Photonic crystal fiber sensor
JP5709178B2 (ja) * 2010-03-01 2015-04-30 国立大学法人京都大学 フォトニック結晶レーザ
US9130348B2 (en) 2010-07-30 2015-09-08 Kyoto University Two-dimensional photonic crystal laser
JP5854417B2 (ja) * 2010-07-30 2016-02-09 国立大学法人京都大学 ２次元フォトニック結晶レーザ
JP5950523B2 (ja) 2010-10-16 2016-07-13 キヤノン株式会社 面発光レーザ、面発光レーザアレイ、画像形成装置
US9042421B2 (en) 2010-10-18 2015-05-26 Canon Kabushiki Kaisha Surface emitting laser, surface emitting laser array, and optical apparatus having surface emitting laser array
JP6331997B2 (ja) * 2014-11-28 2018-05-30 三菱電機株式会社 半導体光素子
CN106025797B (zh) * 2016-07-18 2019-05-17 中国科学院半导体研究所 二维光子准晶宽区半导体激光器结构
EP4131677B1 (de) * 2020-03-31 2025-03-05 Kyoto University Zweidimensionaler laser mit photonischem kristall
CN112397998B (zh) * 2020-11-13 2022-04-01 中国科学院半导体研究所 一种面发射激光器及其制备方法
DE102021127523A1 (de) 2021-10-22 2023-04-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Oberflächenemittierender photonischer-kristall-laser und verfahren zur herstellung eines solchen
CN119581993B (zh) * 2025-02-07 2025-06-03 苏州长光华芯光电技术股份有限公司 半导体光子晶体发光结构及其制备方法

Family Cites Families (15)

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US6304588B1 (en) 1997-02-07 2001-10-16 Xerox Corporation Method and structure for eliminating polarization instability in laterally-oxidized VCSELs
JP3440306B2 (ja) 1997-12-25 2003-08-25 日本電信電話株式会社 ３次元半導体光結晶素子の製造方法
WO2002073753A2 (en) 2001-03-09 2002-09-19 Alight Technologies A/S Mode control using transversal bandgap structure in vcsels
JP3828472B2 (ja) 2002-09-19 2006-10-04 泰彦 荒川 光機能素子
US6778581B1 (en) * 2002-09-24 2004-08-17 Finisar Corporation Tunable vertical cavity surface emitting laser
JP4602701B2 (ja) 2004-06-08 2010-12-22 株式会社リコー 面発光レーザ及び光伝送システム
FR2881876B1 (fr) 2005-02-07 2007-05-25 Centre Nat Rech Scient Procede d'oxydation planaire pour realiser un isolant enterre localise
JP4027392B2 (ja) 2005-04-28 2007-12-26 キヤノン株式会社 垂直共振器型面発光レーザ装置
US7483466B2 (en) * 2005-04-28 2009-01-27 Canon Kabushiki Kaisha Vertical cavity surface emitting laser device
JP4933193B2 (ja) 2005-08-11 2012-05-16 キヤノン株式会社 面発光レーザ、該面発光レーザにおける二次元フォトニック結晶の製造方法
US7697588B2 (en) 2006-11-02 2010-04-13 Canon Kabushiki Kaisha Structure having photonic crystal and surface-emitting laser using the same
US7499481B2 (en) 2006-11-14 2009-03-03 Canon Kabushiki Kaisha Surface-emitting laser and method for producing the same
US7535946B2 (en) 2006-11-16 2009-05-19 Canon Kabushiki Kaisha Structure using photonic crystal and surface emitting laser
JP4350774B2 (ja) * 2007-07-31 2009-10-21 キヤノン株式会社 面発光レーザ
JP4347369B2 (ja) * 2007-07-31 2009-10-21 キヤノン株式会社 面発光レーザの製造方法

Also Published As

Publication number Publication date
JP2009038062A (ja) 2009-02-19
CN101359807B (zh) 2010-07-21
EP2020712A1 (de) 2009-02-04
US7965755B2 (en) 2011-06-21
US7697586B2 (en) 2010-04-13
US20100046570A1 (en) 2010-02-25
US20090034572A1 (en) 2009-02-05
JP4350774B2 (ja) 2009-10-21
EP2020712B1 (de) 2012-02-22
CN101359807A (zh) 2009-02-04

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