ATE436108T1 - Dbr für einen vcsel mit schichten ungleicher optischer dicke - Google Patents

Dbr für einen vcsel mit schichten ungleicher optischer dicke

Info

Publication number
ATE436108T1
ATE436108T1 AT07015270T AT07015270T ATE436108T1 AT E436108 T1 ATE436108 T1 AT E436108T1 AT 07015270 T AT07015270 T AT 07015270T AT 07015270 T AT07015270 T AT 07015270T AT E436108 T1 ATE436108 T1 AT E436108T1
Authority
AT
Austria
Prior art keywords
layer
optical thickness
reflector
optical
optical device
Prior art date
Application number
AT07015270T
Other languages
English (en)
Inventor
Tetsuya Takeuchi
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE436108T1 publication Critical patent/ATE436108T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
    • H01S5/3436—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on InGa(Al)P
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H10H20/8142—Bodies having reflecting means, e.g. semiconductor Bragg reflectors forming resonant cavity structures

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
AT07015270T 2006-08-25 2007-08-03 Dbr für einen vcsel mit schichten ungleicher optischer dicke ATE436108T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006229100 2006-08-25
JP2007137949A JP4300245B2 (ja) 2006-08-25 2007-05-24 多層膜反射鏡を備えた光学素子、面発光レーザ

Publications (1)

Publication Number Publication Date
ATE436108T1 true ATE436108T1 (de) 2009-07-15

Family

ID=38565155

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07015270T ATE436108T1 (de) 2006-08-25 2007-08-03 Dbr für einen vcsel mit schichten ungleicher optischer dicke

Country Status (6)

Country Link
US (2) US7756187B2 (de)
EP (1) EP1892807B1 (de)
JP (1) JP4300245B2 (de)
CN (1) CN101132118B (de)
AT (1) ATE436108T1 (de)
DE (1) DE602007001501D1 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8891571B2 (en) 2008-05-02 2014-11-18 Ricoh Company, Ltd. Vertical cavity surface emitting laser device, vertical cavity surface emitting laser array, optical scanning apparatus, image forming apparatus, optical transmission module and optical transmission system
JP5262293B2 (ja) * 2008-05-26 2013-08-14 三菱電機株式会社 光半導体装置
JP2009290161A (ja) 2008-06-02 2009-12-10 Mitsubishi Electric Corp 光半導体装置
JP2011096856A (ja) * 2009-10-29 2011-05-12 Sony Corp 半導体レーザ
KR101638973B1 (ko) 2010-01-22 2016-07-12 삼성전자주식회사 광변조기 및 그 제조 방법
JP5765892B2 (ja) * 2010-05-27 2015-08-19 キヤノン株式会社 垂直共振器型面発光レーザ、それを用いた画像形成装置
CN104247052B (zh) * 2012-03-06 2017-05-03 天空公司 具有减少导光效果的低折射率材料层的发光二极管
JP6039324B2 (ja) * 2012-09-10 2016-12-07 キヤノン株式会社 レーザ共振器および垂直共振器型面発光レーザ
JP2015038934A (ja) * 2013-08-19 2015-02-26 キヤノン株式会社 面発光レーザ、およびそれを有する光干渉断層計
JP6129051B2 (ja) * 2013-10-10 2017-05-17 キヤノン株式会社 反射鏡、面発光レーザ、レーザ装置、光音響装置及び画像形成装置
US9653883B2 (en) 2015-03-19 2017-05-16 Fuji Xerox Co., Ltd. Surface emitting semiconductor laser device
JP7082273B2 (ja) * 2017-07-21 2022-06-08 日亜化学工業株式会社 発光装置、集積型発光装置および発光モジュール
CN109770886B (zh) * 2019-01-03 2022-10-11 中国科学院半导体研究所 柔性可贴附式血流速度测试系统及其构建方法
JP2021114594A (ja) * 2019-08-27 2021-08-05 株式会社東芝 光半導体素子
JP7669774B2 (ja) * 2020-04-22 2025-04-30 株式会社リコー 反射鏡、面発光レーザ、光源、投影装置、表示装置及び投光装置
CN114079228B (zh) * 2020-08-14 2024-06-04 中国科学院苏州纳米技术与纳米仿生研究所 激光器及其制作方法
US20220375905A1 (en) * 2021-05-10 2022-11-24 Joseph D LaVeigne Detuned antinode enhancement for improved temperature independence in infrared light emitting diodes
US12078830B2 (en) * 2021-12-01 2024-09-03 Viavi Solutions Inc. Optical interference filter with aluminum nitride layers
JP7796403B2 (ja) * 2022-02-14 2026-01-09 東海光学株式会社 ミラー

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US5244749A (en) 1992-08-03 1993-09-14 At&T Bell Laboratories Article comprising an epitaxial multilayer mirror
US5307395A (en) * 1992-09-30 1994-04-26 The United States Of America As Represented By The Secretary Of The Navy Low-damage multilayer mirror for the soft X-ray region
JP2000091701A (ja) 1998-09-04 2000-03-31 Hewlett Packard Co <Hp> 反射鏡、半導体レーザ、反射鏡の形成方法および半導体レーザの製造方法
CN2422763Y (zh) * 1999-11-12 2001-03-07 中国科学院长春物理研究所 垂直腔面发射微腔激光器
US6720585B1 (en) * 2001-01-16 2004-04-13 Optical Communication Products, Inc. Low thermal impedance DBR for optoelectronic devices
JP2002214428A (ja) 2001-01-23 2002-07-31 Hitachi Cable Ltd 半導体多層膜反射鏡および半導体発光素子
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JP4680604B2 (ja) 2005-01-05 2011-05-11 株式会社リコー 光走査装置および画像形成装置

Also Published As

Publication number Publication date
US20080049329A1 (en) 2008-02-28
US20100272143A1 (en) 2010-10-28
EP1892807B1 (de) 2009-07-08
DE602007001501D1 (de) 2009-08-20
JP4300245B2 (ja) 2009-07-22
CN101132118B (zh) 2010-06-02
US7756187B2 (en) 2010-07-13
JP2008078615A (ja) 2008-04-03
EP1892807A1 (de) 2008-02-27
CN101132118A (zh) 2008-02-27
US8249125B2 (en) 2012-08-21

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