ATE547188T1 - Oberflächenbehandlung einer halbleiterscheibe vor dem kleben - Google Patents

Oberflächenbehandlung einer halbleiterscheibe vor dem kleben

Info

Publication number
ATE547188T1
ATE547188T1 AT04290796T AT04290796T ATE547188T1 AT E547188 T1 ATE547188 T1 AT E547188T1 AT 04290796 T AT04290796 T AT 04290796T AT 04290796 T AT04290796 T AT 04290796T AT E547188 T1 ATE547188 T1 AT E547188T1
Authority
AT
Austria
Prior art keywords
surface treatment
before bonding
disc before
semiconductor disc
ozonised
Prior art date
Application number
AT04290796T
Other languages
English (en)
Inventor
Christophe Maleville
Tussot Corinne Maunand
Original Assignee
Soitec Silicon On Insulator
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator
Application granted granted Critical
Publication of ATE547188T1 publication Critical patent/ATE547188T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0416—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
    • B08B2203/005—Details of cleaning machines or methods involving the use or presence of liquid or steam the liquid being ozonated
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
AT04290796T 2003-03-26 2004-03-25 Oberflächenbehandlung einer halbleiterscheibe vor dem kleben ATE547188T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0303699A FR2852869B1 (fr) 2003-03-26 2003-03-26 Traitement superficiel d'une plaquette semiconductrice avant collage

Publications (1)

Publication Number Publication Date
ATE547188T1 true ATE547188T1 (de) 2012-03-15

Family

ID=32799752

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04290796T ATE547188T1 (de) 2003-03-26 2004-03-25 Oberflächenbehandlung einer halbleiterscheibe vor dem kleben

Country Status (4)

Country Link
EP (1) EP1462184B1 (de)
JP (1) JP4541012B2 (de)
AT (1) ATE547188T1 (de)
FR (1) FR2852869B1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2143135A1 (de) * 2007-05-03 2010-01-13 S.O.I.T.E.C. Silicon on Insulator Technologies Verbesserter prozess zum herstellen gereinigter oberflächen aus verspanntem silizium
US7947570B2 (en) * 2008-01-16 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method and manufacturing apparatus of semiconductor substrate
US8003483B2 (en) * 2008-03-18 2011-08-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
CN102024659B (zh) * 2009-09-17 2012-07-04 中芯国际集成电路制造(上海)有限公司 物理气相沉积设备的清洗方法
PH12016500253B1 (en) * 2013-08-07 2023-04-05 Int Test Solutions Inc Working surface cleaning system and method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6701941B1 (en) * 1997-05-09 2004-03-09 Semitool, Inc. Method for treating the surface of a workpiece
JP3385972B2 (ja) * 1998-07-10 2003-03-10 信越半導体株式会社 貼り合わせウェーハの製造方法および貼り合わせウェーハ
US6503333B2 (en) * 2000-11-30 2003-01-07 Taiwan Semiconductor Manufacturing Company, Ltd Method for cleaning semiconductor wafers with ozone-containing solvent

Also Published As

Publication number Publication date
FR2852869B1 (fr) 2006-07-14
FR2852869A1 (fr) 2004-10-01
EP1462184A2 (de) 2004-09-29
EP1462184A3 (de) 2005-12-28
JP2004327969A (ja) 2004-11-18
JP4541012B2 (ja) 2010-09-08
EP1462184B1 (de) 2012-02-29

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