ATE545950T1 - Substratverarbeitungssystem - Google Patents

Substratverarbeitungssystem

Info

Publication number
ATE545950T1
ATE545950T1 AT04717277T AT04717277T ATE545950T1 AT E545950 T1 ATE545950 T1 AT E545950T1 AT 04717277 T AT04717277 T AT 04717277T AT 04717277 T AT04717277 T AT 04717277T AT E545950 T1 ATE545950 T1 AT E545950T1
Authority
AT
Austria
Prior art keywords
substrate
water
unit
cleaning
substrate processing
Prior art date
Application number
AT04717277T
Other languages
English (en)
Inventor
Tadahiro Ohmi
Akinobu Teramoto
Original Assignee
Tokyo Electron Ltd
Tadahiro Ohmi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Tadahiro Ohmi filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of ATE545950T1 publication Critical patent/ATE545950T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0412—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0456—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers in-line arrangement

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Die Bonding (AREA)
AT04717277T 2003-03-04 2004-03-04 Substratverarbeitungssystem ATE545950T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003057202A JP2004266212A (ja) 2003-03-04 2003-03-04 基板の処理システム
PCT/JP2004/002705 WO2004079808A1 (ja) 2003-03-04 2004-03-04 基板の処理システム及び半導体装置の製造方法

Publications (1)

Publication Number Publication Date
ATE545950T1 true ATE545950T1 (de) 2012-03-15

Family

ID=32958730

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04717277T ATE545950T1 (de) 2003-03-04 2004-03-04 Substratverarbeitungssystem

Country Status (8)

Country Link
US (1) US20060216948A1 (de)
EP (1) EP1630858B1 (de)
JP (1) JP2004266212A (de)
KR (1) KR100712942B1 (de)
CN (1) CN100447975C (de)
AT (1) ATE545950T1 (de)
TW (1) TWI286780B (de)
WO (1) WO2004079808A1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007088398A (ja) * 2004-12-14 2007-04-05 Realize Advanced Technology Ltd 洗浄装置、この洗浄装置を用いた洗浄システム、及び被洗浄基板の洗浄方法
JP4711904B2 (ja) * 2006-07-31 2011-06-29 日東電工株式会社 半導体ウエハへの粘着テープ貼付け方法および半導体ウエハからの保護テープ剥離方法
FR2920046A1 (fr) * 2007-08-13 2009-02-20 Alcatel Lucent Sas Procede de post-traitement d'un support de transport pour le convoyage et le stockage atmospherique de substrats semi-conducteurs, et station de post-traitement pour la mise en oeuvre d'un tel procede
WO2011106064A1 (en) * 2010-02-24 2011-09-01 Veeco Instruments Inc. Processing methods and apparatus with temperature distribution control
CN102386057B (zh) * 2010-09-01 2013-10-23 上海宏力半导体制造有限公司 一种降低半导体衬底表面磷浓度的方法
US9153464B2 (en) * 2011-05-31 2015-10-06 Semes Co., Ltd. Substrate processing apparatus and substrate processing method
US9673037B2 (en) * 2011-05-31 2017-06-06 Law Research Corporation Substrate freeze dry apparatus and method
JP5604371B2 (ja) * 2011-06-09 2014-10-08 東京エレクトロン株式会社 液処理装置および液処理方法
CN103839853A (zh) * 2012-11-21 2014-06-04 北京北方微电子基地设备工艺研究中心有限责任公司 一种衬底处理系统
US9267875B2 (en) * 2013-11-21 2016-02-23 Medtronic Minimed, Inc. Accelerated life testing device and method
KR101730147B1 (ko) * 2015-07-23 2017-05-12 피에스케이 주식회사 기판 처리 장치 및 기판 처리 방법
JP2017043803A (ja) * 2015-08-26 2017-03-02 株式会社島津製作所 成膜装置および成膜方法
JP6555078B2 (ja) * 2015-10-29 2019-08-07 株式会社島津製作所 成膜方法
US20190132910A1 (en) * 2017-11-02 2019-05-02 Applied Materials, Inc. Tool architecture using variable frequency microwave for residual moisture removal of electrodes
JP7213624B2 (ja) * 2018-05-01 2023-01-27 東京エレクトロン株式会社 基板処理装置、基板処理システムおよび基板処理方法
CN110273133A (zh) * 2019-07-26 2019-09-24 西安拉姆达电子科技有限公司 一种专用于晶片镀膜的磁控溅射镀膜机
CN111081826B (zh) * 2019-12-31 2022-02-08 苏州联诺太阳能科技有限公司 一种异质结电池制备方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02277236A (ja) * 1989-04-18 1990-11-13 Taiyo Sanso Co Ltd 洗浄装置
JPH0758801B2 (ja) * 1989-06-08 1995-06-21 浜松ホトニクス株式会社 受光素子の電極設計方法およびその受光素子
EP0408216A3 (en) * 1989-07-11 1991-09-18 Hitachi, Ltd. Method for processing wafers and producing semiconductor devices and apparatus for producing the same
JPH0414222A (ja) 1990-05-07 1992-01-20 Hitachi Ltd 半導体装置の製造方法及び製造装置
JPH03116730A (ja) * 1989-09-28 1991-05-17 Nec Yamagata Ltd ウェーハ乾燥装置
JPH06181249A (ja) * 1992-12-14 1994-06-28 Ebara Corp 基板搬送システム
US5745946A (en) * 1994-07-15 1998-05-05 Ontrak Systems, Inc. Substrate processing system
US5794299A (en) * 1996-08-29 1998-08-18 Ontrak Systems, Inc. Containment apparatus
JP4061693B2 (ja) * 1998-02-05 2008-03-19 神鋼電機株式会社 電子部品製造設備
JPH11307507A (ja) * 1998-04-21 1999-11-05 Super Silicon Kenkyusho:Kk ウエハ乾燥装置
JP2000156363A (ja) * 1998-11-19 2000-06-06 Dainippon Screen Mfg Co Ltd 基板乾燥装置
JP2001199715A (ja) * 2000-01-14 2001-07-24 Sony Corp フラーレン重合体及びその生成方法、並びに、フラーレン重合体を用いた機能素子及びその製造方法
US6793967B1 (en) * 1999-06-25 2004-09-21 Sony Corporation Carbonaceous complex structure and manufacturing method therefor
JP2002176026A (ja) * 2000-12-05 2002-06-21 Ses Co Ltd 枚葉式基板洗浄方法および枚葉式基板洗浄装置
JP3837026B2 (ja) 2001-01-23 2006-10-25 東京エレクトロン株式会社 基板洗浄装置及び基板洗浄方法
JP2002237482A (ja) * 2001-02-07 2002-08-23 Sony Corp 真空スピンドライヤー方法及び装置
JP2002289668A (ja) * 2001-03-27 2002-10-04 Hitachi Kokusai Electric Inc 基板処理装置
JP3871112B2 (ja) * 2001-06-21 2007-01-24 株式会社日立国際電気 基板処理装置
JP2003051481A (ja) * 2001-08-07 2003-02-21 Hitachi Ltd 半導体集積回路装置の製造方法
EP1418619A4 (de) 2001-08-13 2010-09-08 Ebara Corp Halbleiterbauelemente und herstellungsverfahren dafür und plattierungslösung
US7905960B2 (en) * 2004-03-24 2011-03-15 Jusung Engineering Co., Ltd. Apparatus for manufacturing substrate

Also Published As

Publication number Publication date
JP2004266212A (ja) 2004-09-24
EP1630858A4 (de) 2009-11-25
EP1630858B1 (de) 2012-02-15
KR100712942B1 (ko) 2007-05-02
WO2004079808A1 (ja) 2004-09-16
CN100447975C (zh) 2008-12-31
KR20050107782A (ko) 2005-11-15
CN1757099A (zh) 2006-04-05
EP1630858A1 (de) 2006-03-01
US20060216948A1 (en) 2006-09-28
TW200426898A (en) 2004-12-01
TWI286780B (en) 2007-09-11

Similar Documents

Publication Publication Date Title
ATE545950T1 (de) Substratverarbeitungssystem
PL1952427T3 (pl) Urządzenie i sposób obróbki chemicznej na mokro płaskich, cienkich substratów w procesie ciągłym
DE60238991D1 (de) Verfahren zur reinigung von membranmodulen
DE60327069D1 (de) Verbesserte reinigungsmethode für viren
TW200610592A (en) Methods for wet cleaning quartz surfaces of components for plasma processing chambers
BR0015448A (pt) Processo para remoção de odores de silicones
EP1460678A4 (de) Verfahren und vorrichtung zum reinigen und verfahren und vorrichtung zum ätzen
DE60301879D1 (de) Röhrenförmige katalytische vorkühleinrichtung zur entfernung von verunreinigungen
TW200707087A (en) Substrate processing apparatus
WO2008039068A3 (en) Radiation system and lithographic apparatus comprising the same
EP1957212A4 (de) Vorrichtung und verfahren zur reinigung und trocknung eines behälters für halbleiterwerkstücke
EP1679361A4 (de) Reinigungsmittel für substrat und reinigungsverfahren
DE60329789D1 (de) Vorrichtung zur Verbesserung der Effizienz der Behandlung von Silicium
CR9865A (es) Eliminacion de los iones de fluoruro de las soluciones acuosas
MX2018012555A (es) Metodo y aparato para el tratamiento de sustratos de piel animal.
DE502007005130D1 (de) Vorrichtung zum Behandeln von Werkstücken oder dergleichen
DE60336877D1 (de) Verfahren zum Reinigen halbleitender Nanopartikel
TWI259825B (en) Docking-type system and method for transferring and treating substrate
DE60307746D1 (de) Vorrichtung zur Reinigung von Abgasen
DE50310828D1 (de) Verfahren zur Reinigung von Spinneinrichtungen
TW200717628A (en) Wafer edge cleaning process
DE60326519D1 (de) Verfahren zur Entfernung von fluorinierten anionischen Tensiden aus Gasmischungen
TW200802559A (en) Method of processing substrate, substrate processing system and substrate processing apparatus
DE60328029D1 (de) VERFAHREN ZUR REINIGUNG VON 3-HYDROXYALKANSuURE-COPOLYMER
EP1599298A4 (de) Verfahren und vorrichtung zur megaschall-reinigung von gemusterten substraten