ATE547700T1 - Verbesserte optische nachweisstruktur für einen plasmonresonanzsensor - Google Patents

Verbesserte optische nachweisstruktur für einen plasmonresonanzsensor

Info

Publication number
ATE547700T1
ATE547700T1 AT07822099T AT07822099T ATE547700T1 AT E547700 T1 ATE547700 T1 AT E547700T1 AT 07822099 T AT07822099 T AT 07822099T AT 07822099 T AT07822099 T AT 07822099T AT E547700 T1 ATE547700 T1 AT E547700T1
Authority
AT
Austria
Prior art keywords
optical detection
plasmon resonance
layer
detection structure
improved optical
Prior art date
Application number
AT07822099T
Other languages
English (en)
Inventor
Etienne Quesnel
Pierre Barritault
Gilles Grand
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE547700T1 publication Critical patent/ATE547700T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity
    • G01N21/552—Attenuated total reflection
    • G01N21/553—Attenuated total reflection and using surface plasmons

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
AT07822099T 2006-11-03 2007-10-31 Verbesserte optische nachweisstruktur für einen plasmonresonanzsensor ATE547700T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0654719A FR2908186B1 (fr) 2006-11-03 2006-11-03 Structure amelioree de detection optique pour capteur par resonance plasmon
PCT/EP2007/061752 WO2008053016A1 (fr) 2006-11-03 2007-10-31 Structure amelioree de detection optique pour capteur par resonance plasmon.

Publications (1)

Publication Number Publication Date
ATE547700T1 true ATE547700T1 (de) 2012-03-15

Family

ID=38229981

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07822099T ATE547700T1 (de) 2006-11-03 2007-10-31 Verbesserte optische nachweisstruktur für einen plasmonresonanzsensor

Country Status (6)

Country Link
US (1) US8031341B2 (de)
EP (1) EP2087342B1 (de)
JP (1) JP2010508527A (de)
AT (1) ATE547700T1 (de)
FR (1) FR2908186B1 (de)
WO (1) WO2008053016A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008133769A2 (en) * 2007-02-26 2008-11-06 Purdue Research Foundation Near field super lens employing tunable negative index materials
US8835851B2 (en) * 2009-10-21 2014-09-16 Stc.Unm Plasmonic detectors
US8514673B1 (en) 2012-04-24 2013-08-20 Seagate Technology Llc Layered near-field transducer
WO2018164216A1 (ja) * 2017-03-08 2018-09-13 国立大学法人神戸大学 構造色を呈する積層体
JP7019170B2 (ja) * 2017-10-26 2022-02-15 国立大学法人大阪大学 プラズモニック構造体
CN109632719B (zh) * 2018-11-28 2021-07-06 中国海洋石油集团有限公司 一种检测流体中气体的方法和装置
US11231365B2 (en) * 2019-07-08 2022-01-25 Hanwha Systems Co., Ltd. Apparatus and method for infrared imaging
JPWO2023189139A1 (de) * 2022-03-30 2023-10-05

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4482779A (en) * 1983-04-19 1984-11-13 The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration Inelastic tunnel diodes
DE3914631A1 (de) * 1989-05-03 1990-11-08 Basf Ag Verfahren zur untersuchung der physikalischen eigenschaften duenner schichten
DE4004088A1 (de) * 1990-02-10 1991-08-14 Basf Ag Verfahren zur untersuchung physikalischer eigenschaften duenner schichten
US5351127A (en) * 1992-06-17 1994-09-27 Hewlett-Packard Company Surface plasmon resonance measuring instruments
WO1997015819A1 (en) * 1995-10-25 1997-05-01 University Of Washington Surface plasmon resonance light pipe sensor
JPH09250981A (ja) * 1996-03-15 1997-09-22 Toto Ltd 表面プラズモン共鳴センサ
US5991488A (en) * 1996-11-08 1999-11-23 The Arizona Board Of Regents On Behalf Of The University Of Arizona Coupled plasmon-waveguide resonance spectroscopic device and method for measuring film properties
JPH10267930A (ja) * 1997-03-26 1998-10-09 Masao Karube 表面プラズモン共鳴バイオセンサー用測定チップ及びその製造方法
JPH10274631A (ja) * 1997-03-31 1998-10-13 Dainippon Printing Co Ltd 表面プラズモン共鳴バイオセンサー用測定チップ及びその製造方法
JP3513448B2 (ja) * 1999-11-11 2004-03-31 キヤノン株式会社 光プローブ
JP2001215190A (ja) * 2000-02-02 2001-08-10 Toto Ltd センサ素子の製造方法
US6421128B1 (en) * 2000-05-17 2002-07-16 The Arizona Board Of Regents On Behalf Of The University Of Arizona Coupled plasmon-waveguide resonance spectroscopic device and method for measuring film properties in the ultraviolet and infrared special ranges
JP2003075333A (ja) * 2001-08-31 2003-03-12 Mitsubishi Heavy Ind Ltd 表面プラズモン共鳴センサ装置
JP3716305B2 (ja) * 2002-08-05 2005-11-16 独立行政法人産業技術総合研究所 内部反射型二次元イメージングエリプソメータ
US7420682B2 (en) * 2003-09-30 2008-09-02 Arizona Board Of Regents On Behalf Of The University Of Arizona Sensor device for interference and plasmon-waveguide/interference spectroscopy
WO2007029414A1 (ja) * 2005-09-06 2007-03-15 National Institute Of Advanced Industrial Science And Technology 光導波モードセンサー

Also Published As

Publication number Publication date
EP2087342B1 (de) 2012-02-29
EP2087342A1 (de) 2009-08-12
WO2008053016A1 (fr) 2008-05-08
US8031341B2 (en) 2011-10-04
JP2010508527A (ja) 2010-03-18
US20100033725A1 (en) 2010-02-11
FR2908186A1 (fr) 2008-05-09
FR2908186B1 (fr) 2012-08-03

Similar Documents

Publication Publication Date Title
GB2484250A (en) Battery cell with integrated sensing platform
WO2011147399A3 (de) Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements und eines verbunds
TW200715358A (en) MEMS device having support structures configured to minimize stress-related deformation and methods for fabricating same
EP2145437A4 (de) Verfahren und system zur zuordnung von codeworten zu schichten
ATE496290T1 (de) Kolorimetrischer sensor
MY151538A (en) Light-emitting device with improved electrode structures
WO2009016594A3 (en) Humidity sensor based on progressive corrosion of exposed material
EP2164280A4 (de) Akustischer sensor
EP2504855A4 (de) Gestapeltes oxidmaterial, halbleiterbauelement und verfahren zur herstellung des halbleiterbauelements
EP2276082A4 (de) Magnetempfindlicher draht, magnetimpedanzelement und magnetimpedanzsensor
EP2552124A4 (de) Substrat mit einem darauf montierten elektroakustischen wandlerelement, mikrofoneinheit und herstellungsverfahren dafür
TR201107389T1 (tr) güçlendirilmiş doğal veya birleştirilmiş taş levha benzeri eleman ve bunun çok-katmanlı koruyucu kaplaması.
EP2012368A4 (de) Ultraviolett-sensor
EP2185922A4 (de) Elektronischer zungensensor
ATE485946T1 (de) Datenschutzstruktur
ATE476755T1 (de) Piezoelektrischer aktuator
WO2007023409A3 (en) Acoustic light-emitting device
EP1898179A4 (de) Zusammengesetzter sensor
TW200739706A (en) Method of polishing a semiconductor-on-insulator structure
ATE537565T1 (de) Lichtemittierende halbleitervorrichtung mit metallsubstrat
SG161183A1 (en) Integrated circuit system employing stress-engineered layers
FR2908186B1 (fr) Structure amelioree de detection optique pour capteur par resonance plasmon
EP2750209A3 (de) Verkapselungsfolie
PL1883119T3 (pl) Półprzewodnikowa struktura warstwowa z supersiecią
FR2975408B1 (fr) Feuille a haute durabilite pour la fabrication de billets de banque