ATE552533T1 - Verfahren zur herstellung eines optischen elements eines optischen immersionslithographiesystems - Google Patents

Verfahren zur herstellung eines optischen elements eines optischen immersionslithographiesystems

Info

Publication number
ATE552533T1
ATE552533T1 AT06793213T AT06793213T ATE552533T1 AT E552533 T1 ATE552533 T1 AT E552533T1 AT 06793213 T AT06793213 T AT 06793213T AT 06793213 T AT06793213 T AT 06793213T AT E552533 T1 ATE552533 T1 AT E552533T1
Authority
AT
Austria
Prior art keywords
optical
optical element
face
liquid
immersion lithography
Prior art date
Application number
AT06793213T
Other languages
English (en)
Inventor
Steven Holmes
Toshiharu Furukawa
Charles Koburger
Naim Moumen
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of ATE552533T1 publication Critical patent/ATE552533T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
AT06793213T 2005-09-30 2006-09-05 Verfahren zur herstellung eines optischen elements eines optischen immersionslithographiesystems ATE552533T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/163,007 US7495743B2 (en) 2005-09-30 2005-09-30 Immersion optical lithography system having protective optical coating
PCT/EP2006/065995 WO2007039374A2 (en) 2005-09-30 2006-09-05 Immersion optical lithography system having protective optical coating

Publications (1)

Publication Number Publication Date
ATE552533T1 true ATE552533T1 (de) 2012-04-15

Family

ID=37533327

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06793213T ATE552533T1 (de) 2005-09-30 2006-09-05 Verfahren zur herstellung eines optischen elements eines optischen immersionslithographiesystems

Country Status (8)

Country Link
US (3) US7495743B2 (de)
EP (1) EP1929374B1 (de)
JP (1) JP4931928B2 (de)
KR (1) KR101027174B1 (de)
CN (1) CN101278238B (de)
AT (1) ATE552533T1 (de)
TW (1) TW200728932A (de)
WO (1) WO2007039374A2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7495743B2 (en) * 2005-09-30 2009-02-24 International Business Machines Corporation Immersion optical lithography system having protective optical coating
JP5399896B2 (ja) * 2006-06-26 2014-01-29 ノバルティス アーゲー 有機化合物
JP5120193B2 (ja) * 2008-10-08 2013-01-16 株式会社ニコン 露光装置、メンテナンス方法、露光方法、及びデバイス製造方法
DE102016203442A1 (de) * 2016-03-02 2017-09-07 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage und Verfahren zum Vermessen eines Projektionsobjektives
CN112522958A (zh) * 2019-09-18 2021-03-19 天守(福建)超纤科技股份有限公司 一种光影处理技术合成革及其制备方法

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3933573A (en) * 1973-11-27 1976-01-20 The United States Of America As Represented By The Secretary Of The Air Force Aluminum nitride single crystal growth from a molten mixture with calcium nitride
US4000304A (en) * 1974-05-06 1976-12-28 Mead Johnson & Company Diuretic antiturombogenic and antiarrhythmic processes using N-substituted indole dimers and pyrrolobenzodia-zepine rearrangement products thereof
JPS55102237A (en) * 1979-01-31 1980-08-05 Hitachi Ltd Method and apparatus for plasma processing
WO1985003460A1 (en) * 1984-02-13 1985-08-15 Schmitt Jerome J Iii Method and apparatus for the gas jet deposition of conducting and dielectric thin solid films and products produced thereby
US5216260A (en) * 1984-11-19 1993-06-01 Max-Planck Gesellschaft Zur Foerderung Der Wissenschaften E.V. Optically bistable semiconductor device with pairs of monoatomic layers separated by intrinsic layers
US5060234A (en) * 1984-11-19 1991-10-22 Max-Planck Gesellschaft Zur Forderung Der Wissenschaften Injection laser with at least one pair of monoatomic layers of doping atoms
US5356672A (en) * 1990-05-09 1994-10-18 Jet Process Corporation Method for microwave plasma assisted supersonic gas jet deposition of thin films
US5256205A (en) * 1990-05-09 1993-10-26 Jet Process Corporation Microwave plasma assisted supersonic gas jet deposition of thin film materials
JPH04224136A (ja) * 1990-12-26 1992-08-13 Matsunami Glass Kogyo Kk プラズマ放電処理を施したガラス材
US5356673A (en) * 1991-03-18 1994-10-18 Jet Process Corporation Evaporation system and method for gas jet deposition of thin film materials
US5354381A (en) * 1993-05-07 1994-10-11 Varian Associates, Inc. Plasma immersion ion implantation (PI3) apparatus
US5759634A (en) * 1994-03-11 1998-06-02 Jet Process Corporation Jet vapor deposition of nanocluster embedded thin films
JPH07270835A (ja) * 1994-03-31 1995-10-20 Sony Corp 光学素子の膜の形成方法
US5455211A (en) * 1994-04-19 1995-10-03 Arizona Board Of Regents Acting On Behalf Of Arizona State University Methods of making nitride glasses
JPH07294705A (ja) * 1994-04-25 1995-11-10 Canon Inc 紫外線照射後処理方法
FR2759362B1 (fr) * 1997-02-10 1999-03-12 Saint Gobain Vitrage Substrat transparent muni d'au moins une couche mince a base de nitrure ou d'oxynitrure de silicium et son procede d'obtention
TWI267704B (en) * 1999-07-02 2006-12-01 Asml Netherlands Bv Capping layer for EUV optical elements
JP2001141902A (ja) * 1999-09-02 2001-05-25 Nikon Corp 光学素子及びその製造方法及び露光装置
US6576053B1 (en) * 1999-10-06 2003-06-10 Samsung Electronics Co., Ltd. Method of forming thin film using atomic layer deposition method
US6466365B1 (en) 2000-04-07 2002-10-15 Corning Incorporated Film coated optical lithography elements and method of making
FI117979B (fi) * 2000-04-14 2007-05-15 Asm Int Menetelmä oksidiohutkalvojen valmistamiseksi
US6969539B2 (en) * 2000-09-28 2005-11-29 President And Fellows Of Harvard College Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide
JP4000830B2 (ja) * 2001-04-27 2007-10-31 コニカミノルタホールディングス株式会社 プラズマ放電処理装置
US6754108B2 (en) * 2001-08-30 2004-06-22 Micron Technology, Inc. DRAM cells with repressed floating gate memory, low tunnel barrier interpoly insulators
JP2003229553A (ja) * 2002-02-05 2003-08-15 Sharp Corp 半導体装置及びその製造方法
US20050145821A1 (en) 2002-03-06 2005-07-07 French Roger H. Radiation durable organic compounds with high transparency in the vaccum ultraviolet, and method for preparing
JP2004142998A (ja) * 2002-10-25 2004-05-20 Nippon Sheet Glass Co Ltd 薄膜を有するガラス物品およびその製造方法
EP1571700A4 (de) 2002-12-10 2007-09-12 Nikon Corp Optische vorrichtung und projektionsbelichtungsvorrichtung unter verwendung der optischen vorrichtung
US7029832B2 (en) * 2003-03-11 2006-04-18 Samsung Electronics Co., Ltd. Immersion lithography methods using carbon dioxide
US7700267B2 (en) * 2003-08-11 2010-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion fluid for immersion lithography, and method of performing immersion lithography
US8149381B2 (en) * 2003-08-26 2012-04-03 Nikon Corporation Optical element and exposure apparatus
EP2278402B1 (de) * 2003-08-26 2013-03-06 Nikon Corporation Belichtungsvorrichtung
US6954256B2 (en) * 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
US7924397B2 (en) * 2003-11-06 2011-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-corrosion layer on objective lens for liquid immersion lithography applications
JP2005189850A (ja) 2003-12-15 2005-07-14 Carl Zeiss Smt Ag 液浸リソグラフィー用屈折性投影対物レンズ
JP2007519037A (ja) * 2003-12-18 2007-07-12 エーエフジー インダストリーズ，インコーポレイテッド 腐食及び傷耐性を向上させた光学コーティングのため保護層
US7460206B2 (en) * 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
JP2005258028A (ja) * 2004-03-11 2005-09-22 Nec Viewtechnology Ltd 光学部品及び投写型表示装置
US7670758B2 (en) * 2004-04-15 2010-03-02 Api Nanofabrication And Research Corporation Optical films and methods of making the same
EP1774405B1 (de) 2004-06-04 2014-08-06 Carl Zeiss SMT GmbH System zur messung der bildqualität eines optischen bildgebungssystems
US7495743B2 (en) * 2005-09-30 2009-02-24 International Business Machines Corporation Immersion optical lithography system having protective optical coating

Also Published As

Publication number Publication date
US20070076179A1 (en) 2007-04-05
JP4931928B2 (ja) 2012-05-16
CN101278238A (zh) 2008-10-01
TW200728932A (en) 2007-08-01
JP2009510749A (ja) 2009-03-12
WO2007039374B1 (en) 2007-08-30
CN101278238B (zh) 2010-06-16
KR20080052598A (ko) 2008-06-11
WO2007039374A2 (en) 2007-04-12
EP1929374B1 (de) 2012-04-04
EP1929374A2 (de) 2008-06-11
WO2007039374A3 (en) 2007-07-05
KR101027174B1 (ko) 2011-04-05
US20070296947A1 (en) 2007-12-27
US20080225251A1 (en) 2008-09-18
US8009268B2 (en) 2011-08-30
US7495743B2 (en) 2009-02-24
US7646469B2 (en) 2010-01-12

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