ATE552593T1 - Eine speicherzellenvorrichtung und eine anzeigevorrichtung, die einen mechanischen schalter verwendet und verfahren zu dessen steuerung - Google Patents
Eine speicherzellenvorrichtung und eine anzeigevorrichtung, die einen mechanischen schalter verwendet und verfahren zu dessen steuerungInfo
- Publication number
- ATE552593T1 ATE552593T1 AT06123877T AT06123877T ATE552593T1 AT E552593 T1 ATE552593 T1 AT E552593T1 AT 06123877 T AT06123877 T AT 06123877T AT 06123877 T AT06123877 T AT 06123877T AT E552593 T1 ATE552593 T1 AT E552593T1
- Authority
- AT
- Austria
- Prior art keywords
- mechanical switch
- controlling
- same
- memory cell
- display device
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C23/00—Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
- G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Memories (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020050114665A KR100651825B1 (ko) | 2005-11-29 | 2005-11-29 | 기계적인 스위치를 이용한 메모리 어레이, 그의 제어 방법,기계적인 스위치를 이용한 표시 장치 및 그의 제어 방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE552593T1 true ATE552593T1 (de) | 2012-04-15 |
Family
ID=37731505
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT06123877T ATE552593T1 (de) | 2005-11-29 | 2006-11-10 | Eine speicherzellenvorrichtung und eine anzeigevorrichtung, die einen mechanischen schalter verwendet und verfahren zu dessen steuerung |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7486539B2 (de) |
| EP (1) | EP1793386B1 (de) |
| JP (1) | JP2007149318A (de) |
| KR (1) | KR100651825B1 (de) |
| CN (1) | CN100552820C (de) |
| AT (1) | ATE552593T1 (de) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100857085B1 (ko) | 2007-05-18 | 2008-09-05 | 한국과학기술원 | 기계적인 스위치를 이용한 메모리 어레이의 동작방법 |
| US8223285B2 (en) | 2007-11-09 | 2012-07-17 | Seiko Epson Corporation | Active matrix device, method for manufacturing switching element, electro-optical display device, and electronic apparatus |
| JP4561813B2 (ja) * | 2007-11-09 | 2010-10-13 | セイコーエプソン株式会社 | アクティブマトリクス装置、電気光学表示装置、および電子機器 |
| JP4518200B2 (ja) * | 2007-11-09 | 2010-08-04 | セイコーエプソン株式会社 | アクティブマトリクス装置、スイッチング素子の製造方法、電気光学表示装置、および電子機器 |
| KR100896981B1 (ko) * | 2007-12-18 | 2009-05-14 | 한국과학기술원 | 메모리 어레이의 구동방법 |
| JP5381216B2 (ja) * | 2009-03-25 | 2014-01-08 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| JP5381217B2 (ja) * | 2009-03-25 | 2014-01-08 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| CN101995689A (zh) * | 2009-08-11 | 2011-03-30 | 江苏丽恒电子有限公司 | 显示装置的开关阵列和显示阵列 |
| JP5444948B2 (ja) * | 2009-08-26 | 2014-03-19 | セイコーエプソン株式会社 | 電気光学装置 |
| US8436700B2 (en) * | 2009-09-18 | 2013-05-07 | Easic Corporation | MEMS-based switching |
| US8605499B2 (en) | 2011-04-22 | 2013-12-10 | International Business Machines Corporation | Resonance nanoelectromechanical systems |
| EP2557569A1 (de) | 2011-08-10 | 2013-02-13 | Thomson Licensing | Feldprogrammierbare Festwertspeichervorrichtung |
| US9166054B2 (en) * | 2012-04-13 | 2015-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| CN106865484A (zh) * | 2017-02-06 | 2017-06-20 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示装置 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL8103377A (nl) | 1981-07-16 | 1983-02-16 | Philips Nv | Weergeefinrichting. |
| WO2000055918A1 (en) | 1999-03-18 | 2000-09-21 | Cavendish Kinetics Limited | Flash memory cell having a flexible element |
| WO2001003190A1 (fr) * | 1999-06-30 | 2001-01-11 | Hitachi, Ltd. | Circuit integre a semi-conducteurs |
| EP1153405B1 (de) * | 1999-12-10 | 2006-09-13 | Koninklijke Philips Electronics N.V. | Elektronische geräte mit mikromechanischen schaltern |
| US6534839B1 (en) | 1999-12-23 | 2003-03-18 | Texas Instruments Incorporated | Nanomechanical switches and circuits |
| CN1317728C (zh) * | 2004-01-16 | 2007-05-23 | 清华大学 | 一种用牺牲层材料做支撑梁的微机械开关及制作工艺 |
| US6884950B1 (en) * | 2004-09-15 | 2005-04-26 | Agilent Technologies, Inc. | MEMs switching system |
-
2005
- 2005-11-29 KR KR1020050114665A patent/KR100651825B1/ko not_active Expired - Fee Related
-
2006
- 2006-10-27 JP JP2006293083A patent/JP2007149318A/ja active Pending
- 2006-11-03 US US11/556,451 patent/US7486539B2/en not_active Expired - Fee Related
- 2006-11-10 CN CNB2006101386599A patent/CN100552820C/zh not_active Expired - Fee Related
- 2006-11-10 AT AT06123877T patent/ATE552593T1/de active
- 2006-11-10 EP EP06123877A patent/EP1793386B1/de not_active Not-in-force
Also Published As
| Publication number | Publication date |
|---|---|
| KR100651825B1 (ko) | 2006-12-01 |
| US20070121362A1 (en) | 2007-05-31 |
| EP1793386A2 (de) | 2007-06-06 |
| JP2007149318A (ja) | 2007-06-14 |
| CN1975929A (zh) | 2007-06-06 |
| EP1793386A3 (de) | 2007-09-19 |
| CN100552820C (zh) | 2009-10-21 |
| EP1793386B1 (de) | 2012-04-04 |
| US7486539B2 (en) | 2009-02-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ATE552593T1 (de) | Eine speicherzellenvorrichtung und eine anzeigevorrichtung, die einen mechanischen schalter verwendet und verfahren zu dessen steuerung | |
| AU2002332653A1 (en) | Non-volatile memory with block erase | |
| TWI366269B (en) | Thin film transistor array panel using organic semiconductor and a method for manufacturing the same | |
| TW200834205A (en) | Active device array substrate and driving method thereof | |
| DE60308748D1 (de) | Inspektionsverfahren und Einrichtung für aktive Matrix | |
| DE60207192D1 (de) | Aktivmatrixanzeige, organische aktivmatrix-elektro-lumineszenzanzeige und verfahren zu ihrer ansteuerung | |
| DE60319718D1 (de) | Steuerverfahren für eine nichtflüchtige speichereinrichtung | |
| SG125143A1 (en) | Nrom memory cell, memory array, related devices and methods | |
| FR2885995B1 (fr) | Plaque vitroceramique et son procede de fabrication | |
| WO2006122271A3 (en) | Systems and methods for programming floating-gate transistors | |
| EP1658625A4 (de) | Halbleitender film und verfahren zu seiner herstellung | |
| EP1263048A4 (de) | Ferroelektrische speicheranordnung und ihre herstellungsmethode und hybrid-anordnung | |
| TWI347677B (en) | Thin film transistor array panel and manufacturing method thereof | |
| DE50207435D1 (de) | Verfahren zum beschreiben magnetoresistiver speicherzellen und mit diesem verfahren beschreibbarer magnetoresistiver speicher | |
| TW200710856A (en) | Memory device, memory array segment, and method of programming a memory cell | |
| DE60215108D1 (de) | Zweireihiger Kegelrollenlagerapparat | |
| TWI350496B (en) | Apparatus for driving active matrix type display device and the method thereof | |
| TWI368326B (en) | Thin film transistor array panel and manufacturing method thereof | |
| ATE366155T1 (de) | Verbessertes werkzeugsystem | |
| FR2852323B1 (fr) | Nouveau procede de reformage regeneratif | |
| ATE402788T1 (de) | Verbessertes werkzeugsystem | |
| EP1504774A4 (de) | Künstliche extrazelluläre matrix und verfahren zu ihrer herstellung | |
| GB0316482D0 (en) | Active matrix array device | |
| ATE516470T1 (de) | Montagebausatz zum aufständern von solarmodulen | |
| FR2862187B1 (fr) | Nouvelles compositions agrochimiques et leur procede de fabrication |