ATE553526T1 - Hochleistungsmodulator - Google Patents

Hochleistungsmodulator

Info

Publication number
ATE553526T1
ATE553526T1 AT00986646T AT00986646T ATE553526T1 AT E553526 T1 ATE553526 T1 AT E553526T1 AT 00986646 T AT00986646 T AT 00986646T AT 00986646 T AT00986646 T AT 00986646T AT E553526 T1 ATE553526 T1 AT E553526T1
Authority
AT
Austria
Prior art keywords
modulator
high performance
switches
primary
switch
Prior art date
Application number
AT00986646T
Other languages
English (en)
Inventor
Marcel Gaudreau
Michael Kempkes
Timothy Hawkey
Jeffrey Casey
James Mulvaney
Peter Dandrige
Original Assignee
Diversified Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Diversified Technologies Inc filed Critical Diversified Technologies Inc
Application granted granted Critical
Publication of ATE553526T1 publication Critical patent/ATE553526T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
    • H03K17/691—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/107—Modifications for increasing the maximum permissible switched voltage in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08128—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in composite switches

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Amplifiers (AREA)
  • Amplitude Modulation (AREA)
AT00986646T 2000-01-10 2000-12-20 Hochleistungsmodulator ATE553526T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/479,982 US6900557B1 (en) 2000-01-10 2000-01-10 High power modulator
PCT/US2000/034731 WO2001052415A1 (en) 2000-01-10 2000-12-20 High power modulator

Publications (1)

Publication Number Publication Date
ATE553526T1 true ATE553526T1 (de) 2012-04-15

Family

ID=23906195

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00986646T ATE553526T1 (de) 2000-01-10 2000-12-20 Hochleistungsmodulator

Country Status (5)

Country Link
US (1) US6900557B1 (de)
EP (1) EP1254516B1 (de)
AT (1) ATE553526T1 (de)
DK (1) DK1254516T3 (de)
WO (1) WO2001052415A1 (de)

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US7449801B2 (en) * 2002-11-28 2008-11-11 Infineon Technologies Ag Semiconductor circuit arrangement for controlling a high voltage or a current of high current intensity
NZ526109A (en) * 2003-05-26 2006-09-29 Auckland Uniservices Ltd Parallel-tuned pick-up system with multiple voltage outputs
US7576451B2 (en) 2005-09-28 2009-08-18 Rockwell Automation Technologies, Inc. Self powered gate driver system
US7660137B1 (en) 2006-07-26 2010-02-09 Polarity, Inc. High-voltage modulator system
US8673623B2 (en) * 2007-08-31 2014-03-18 Board Of Regents, The University Of Texas System Apparatus for performing magnetic electroporation
FR2943837B1 (fr) * 2009-03-25 2015-07-03 Gen Electric Transformateur haute-tension et alimentation d'un tube a rayons x comprenant un tel transformateur
US20110065161A1 (en) * 2009-09-14 2011-03-17 Board Of Regents, The University Of Texas System Bipolar solid state marx generator
US9029108B2 (en) 2009-11-06 2015-05-12 Diversified Technologies, Inc. Pulsed electric field (PEF) method for continuous enhanced extraction of oil and lipids from small aquatic plants
JP5786281B2 (ja) * 2010-05-19 2015-09-30 サンケン電気株式会社 駆動回路
WO2012010969A2 (en) * 2010-07-20 2012-01-26 Board Of Regents, The University Of Texas System Electromechanical lysing of algae cells
WO2012145475A1 (en) 2011-04-21 2012-10-26 Converteam Technology Ltd. Gate drive circuit and associated method
CN105453434A (zh) * 2013-04-17 2016-03-30 奥的斯电梯公司 采用氮化镓开关的驱动单元
US10790816B2 (en) * 2014-01-27 2020-09-29 Eagle Harbor Technologies, Inc. Solid-state replacement for tube-based modulators
EP3076550A1 (de) * 2015-03-30 2016-10-05 ALSTOM Technology Ltd Schaltungsanordnung und ein Verfahren zur galvanisch getrennten Ansteuerung eines Halbleiterschalters
US10892591B2 (en) * 2018-04-03 2021-01-12 Fermi Research Alliance, Llc High speed driver for particle beam deflector
KR102141684B1 (ko) 2018-08-24 2020-09-14 한국원자력연구원 전류 펄스를 제어하는 모듈레이터 및 그 방법
CN110739935B (zh) * 2019-10-16 2023-08-25 长沙魔豆智能科技有限公司 一种脉冲发生器及脉冲发生方法
RU2764278C1 (ru) * 2020-10-05 2022-01-17 Общество с ограниченной ответственностью "Русконтроль" (ООО "Русконтроль") Высоковольтный транзисторный ключ
CN112865719B (zh) * 2020-12-31 2022-11-29 散裂中子源科学中心 用于硼中子俘获治疗装置的射频功率源系统及装置
US20230170901A1 (en) * 2021-11-23 2023-06-01 Drexel University Fault current bypass based solid state circuit breakers and active clamping snubbers for dc circuit breakers

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Also Published As

Publication number Publication date
EP1254516B1 (de) 2012-04-11
EP1254516A4 (de) 2008-04-09
US6900557B1 (en) 2005-05-31
DK1254516T3 (da) 2012-06-04
EP1254516A1 (de) 2002-11-06
WO2001052415A1 (en) 2001-07-19

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